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51. 发明申请

US20090219424A1 IMAGE SENSING APPARATUS AND IMAGING SYSTEM 有权
标题翻译：图像感应装置和成像系统
公开(公告)号：US20090219424A1
公开(公告)日：2009-09-03
申请号：US12372276
申请日：2009-02-17
申请人： Kazuhiro Sonoda , Shintaro Takenaka , Tomoyuki Noda , Tetsuya Itano
发明人： Kazuhiro Sonoda , Shintaro Takenaka , Tomoyuki Noda , Tetsuya Itano
IPC分类号： H04N5/335 , H04N5/225
CPC分类号： H04N5/3765 , H04N5/361 , H04N5/3658
摘要： An image sensing apparatus comprising on a single semiconductor substrate: a pixel array; a vertical scanning unit; a horizontal scanning unit; a counter which starts a counting operation to count the number of the clocks before a start of the first period, and stops the counting operation before a start of the second period during the first period; and a generation unit which generates a first control signal for causing the vertical scanning unit to drive a pixel, the generation unit including a signal generation unit which generates a second control signal in accordance with the counted value output from the counter, and a delay unit which delays the second control signal to generate the first control signal and output the first control signal to the vertical scanning unit.
摘要翻译：一种图像感测装置，包括在单个半导体衬底上：像素阵列; 垂直扫描单元; 水平扫描单元; 计数器，其开始计数操作以对第一时段开始之前的时钟数进行计数，并且在第一时段期间的第二时段开始之前停止计数操作; 以及生成单元，其生成用于使垂直扫描单元驱动像素的第一控制信号，所述生成单元包括根据从计数器输出的计数值生成第二控制信号的信号生成单元，以及延迟单元其延迟第二控制信号以产生第一控制信号，并将第一控制信号输出到垂直扫描单元。

52. 发明申请

US20090166516A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE SENSING SYSTEM 失效
标题翻译：光电转换装置制造方法，半导体器件制造方法，光电转换装置和图像感测系统
公开(公告)号：US20090166516A1
公开(公告)日：2009-07-02
申请号：US12341385
申请日：2008-12-22
申请人： Seiichi Tamura , Tetsuya Itano
发明人： Seiichi Tamura , Tetsuya Itano
IPC分类号： H01L31/103 , H01L31/18 , H01L21/266 , H01L31/00 , H01L21/20
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14689
摘要： A photoelectric conversion device manufacturing method comprises: a first implantation step of implanting impurity ions of a first conductivity type into an underlying substrate via a region of the oxide film exposed by an opening, thereby forming a first semiconductor region having a first thickness in the element region; an the oxidation step of oxidizing the region of the oxide film exposed by the opening, thereby thickening the exposed region; an the exposure step of exposing a region of the oxide film which is not exposed by the opening; a the second implantation step of, after the exposure step, implanting the impurity ions of the first conductivity type into the underlying substrate via a region unthickened in the oxidation step, thereby forming a second semiconductor region having a second thickness larger than the first thickness in the element isolation region; and an the element formation step.
摘要翻译：一种光电转换装置的制造方法，其特征在于，包括：第一注入工序，通过由开口露出的所述氧化膜的区域，将第一导电型杂质离子注入下层基板，由此在所述元件中形成具有第一厚度的第一半导体区域地区; 氧化步骤，氧化由开口暴露的氧化膜的区域，从而使曝光区域变厚; 曝光步骤，曝光所述氧化膜的未被所述开口暴露的区域; 第二注入步骤，在曝光步骤之后，通过在氧化步骤中不受影响的区域将第一导电类型的杂质离子注入到下面的衬底中，从而形成具有大于第一厚度的第二厚度的第二半导体区域元件隔离区; 和元件形成步骤。

53. 发明申请

US20070052831A1 SIGNAL READOUT STRUCTURE FOR AN IMAGE SENSING APPARATUS 有权
标题翻译：用于图像传感装置的信号读出结构
公开(公告)号：US20070052831A1
公开(公告)日：2007-03-08
申请号：US11554670
申请日：2006-10-31
申请人： Masanori Ogura , Fumihiro Inui , Tetsuya Itano
发明人： Masanori Ogura , Fumihiro Inui , Tetsuya Itano
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H04N5/3742
摘要： An image sensing apparatus includes a photoelectric converter having a plurality of pixels covered by a color filter composed of a plurality of colors, a plurality of common readout units adapted to sequentially output signals from the plurality of pixels, a time division multiplex (TDM) unit for time division multiplexing signals from the plurality of common readout units, and a readout control unit for reading the signals from the plurality of pixels to the common readout units in such a way that signals from pixels covered by color filters of the same color are continuously multiplexed.
摘要翻译：一种图像感测装置，包括具有由多个颜色组成的滤色器所覆盖的多个像素的光电转换器，适于顺序地输出来自多个像素的信号的多个公共读出单元，时分多路复用（TDM）单元用于对来自多个公共读出单元的时分多路复用信号;以及读出控制单元，用于将来自多个像素的信号读取到公共读出单元，使得来自相同颜色的滤色器所覆盖的像素的信号连续地多路复用

54. 发明申请

US20120286140A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20120286140A1
公开(公告)日：2012-11-15
申请号：US13512281
申请日：2010-11-29
申请人： Tetsuya Itano , Kazuo Yamazaki , Nobuyuki Endo , Kyouhei Watanabe
发明人： Tetsuya Itano , Kazuo Yamazaki , Nobuyuki Endo , Kyouhei Watanabe
IPC分类号： H01L27/148
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14634 , H01L27/1464 , H04N5/3698 , H04N5/3742
摘要： Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.
摘要翻译：来自转移晶体管的暗电流被抑制，并且第二半导体衬底中的电源电压降低。一种固态摄像装置，包括：像素阵列，多个公共输出线，接收从多个像素读出的信号;顺序地驱动多个传输晶体管的传送扫描单元;信号处理单元，处理输出到公共信号线和电平移位单元，使提供给转移晶体管的栅极的脉冲的幅度大于提供给构成信号处理单元的晶体管的栅极的脉冲的幅度。像素阵列和电平移位单元布置在第一半导体衬底上，而多个公共输出线和信号处理单元布置在第二半导体衬底上。

55. 发明申请

US20120267690A1 SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM 有权
标题翻译：固态图像拾取器件和图像拾取系统
公开(公告)号：US20120267690A1
公开(公告)日：2012-10-25
申请号：US13517357
申请日：2010-12-22
申请人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Takeshi Ichikawa
发明人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Takeshi Ichikawa
IPC分类号： H01L27/148
CPC分类号： H01L27/14636 , H01L27/14632 , H01L27/14643 , H01L27/1465
摘要： The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.
摘要翻译：本发明涉及一种固态图像拾取装置。该装置包括：第一基板，包括光电转换元件和被配置为从光电转换元件传送电荷的转移栅电极;第二基板，具有外围电路部分，其包括被配置为读取在光电转换元件中产生的基于信号的电荷第一和第二基板被层压。该器件还包括多层互连结构，其设置在第一衬底上，包括铝互连和多层互连结构，设置在第二衬底上，包括铜互连。

56. 发明授权

US08293561B2 Image pickup device and image pickup system 有权
标题翻译：摄像设备和摄像系统
公开(公告)号：US08293561B2
公开(公告)日：2012-10-23
申请号：US13442235
申请日：2012-04-09
申请人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
发明人： Takanori Watanabe , Tetsuya Itano , Mahito Shinohara
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3595 , H04N5/374
摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.
摘要翻译：提供了一种图像拾取装置，包括将光转换成电荷的光电转换元件，用于将转换的电荷转移到浮动节点的传输门，源极跟随器晶体管，用于基于浮动节点的电压将信号输出到信号线和钳位电路，在第一电压和第二电压下限幅信号线。

57. 发明申请

US20120248293A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20120248293A1
公开(公告)日：2012-10-04
申请号：US13515445
申请日：2010-12-13
申请人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
发明人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L27/1465
摘要： A solid-state image pickup device includes a pixel region including photoelectric conversion units, FDs, and transfer transistors, reset transistors, amplifier transistors, and a reference voltage supply line used to supply reference voltages to the photoelectric conversion units. In the device, the pixel region and the reference voltage supply line are disposed on a first semiconductor substrate, and at least the reset transistors or the amplifier transistors are disposed on a second semiconductor substrate. Furthermore, power supply lines used to supply voltages to the reference voltage supply line are disposed on the second semiconductor substrate. The device further includes second electric connection units which electrically connect the reference voltage supply line to the power supply line. The first electric connection units are disposed in the pixel region whereas the second electric connection units are disposed outside the pixel region.
摘要翻译：固态图像拾取装置包括包括光电转换单元，FD和传输晶体管的像素区域，复位晶体管，放大器晶体管和用于向光电转换单元提供参考电压的参考电压供应线。在该器件中，像素区域和参考电压供给线设置在第一半导体衬底上，并且至少复位晶体管或放大器晶体管设置在第二半导体衬底上。此外，用于向参考电压供应线供电的电源线设置在第二半导体衬底上。该装置还包括将参考电压供应线电连接到电源线的第二电连接单元。第一电连接单元设置在像素区域中，而第二电连接单元设置在像素区域的外部。

58. 发明授权

US08183084B2 Methods of manufacturing solid state image pickup devices 失效
标题翻译：制造固态图像拾取装置的方法
公开(公告)号：US08183084B2
公开(公告)日：2012-05-22
申请号：US12911844
申请日：2010-10-26
申请人： Tetsuya Itano , Fumihiro Inui , Masanori Ogura
发明人： Tetsuya Itano , Fumihiro Inui , Masanori Ogura
IPC分类号： H01L21/00
CPC分类号： G03F7/70425 , G03F7/70466 , H01L27/146
摘要： A method of manufacturing a solid state image pickup device having a plurality of pixels each including a photoelectric conversion region for converting light into a signal charge, and a plurality of wiring layers including first and second wiring layers. The method includes steps of forming the first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing the plurality of patterns, and forming the second wiring layer as a pattern by batch exposure processing. A connecting position along which the divided patterns are connected is arranged in a pixel area in which the plurality of pixels are arranged. The wiring included in the first wiring layer is formed by a vertical direction wiring arranged in parallel with and not crossing the connecting position in the pixel area, and the wiring included in the second wiring layer is formed by a horizontal direction wiring arranged in parallel with and crossing the connecting position in the pixel area.
摘要翻译：一种制造具有多个像素的固态图像拾取装置的方法，每个像素都包括用于将光转换为信号电荷的光电转换区域，以及包括第一和第二布线层的多个布线层。该方法包括以下步骤：通过将期望的图案分成多个图案，连接分割图案和曝光多个图案来形成第一布线层作为图案，并且通过批量曝光处理形成第二布线层作为图案。连接分割图案的连接位置被布置在多个像素排列的像素区域中。包括在第一布线层中的布线由垂直方向布线形成，该垂直方向布线与像素区域中的连接位置平行且不相交，并且包括在第二布线层中的布线由与水平方向布线平行布置的水平方向布线形成并穿过像素区域中的连接位置。

59. 发明授权

US07920192B2 Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate 有权
标题翻译：具有像素区域和共用相同基板的外围电路区域的光电转换装置
公开(公告)号：US07920192B2
公开(公告)日：2011-04-05
申请号：US11774270
申请日：2007-07-06
申请人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
发明人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
IPC分类号： H04N5/335
CPC分类号： H01L27/14616 , H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.
摘要翻译：光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

60. 发明授权

US07825974B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US07825974B2
公开(公告)日：2010-11-02
申请号：US11960886
申请日：2007-12-20
申请人： Tetsuya Itano , Tomoyuki Noda
发明人： Tetsuya Itano , Tomoyuki Noda
IPC分类号： H04N3/14 , H04N5/335 , H04N5/217 , H04N9/64 , H01L27/00
CPC分类号： H04N5/3741 , H04N5/335 , H04N5/37457
摘要： Each pixel includes a photo-electric converter, transfer switch, charge-voltage conversion node, amplifier, and control switch. A solid-state image sensor includes a voltage controller which controls the voltage of the charge-voltage conversion node of each pixel via the control switch of the pixel. A voltage set at the charge-voltage conversion node by the voltage controller via the control switch includes a first voltage (VD—1) for setting a pixel in a selected state, and a second voltage (VD—2) for setting the pixel in an unselected state. The voltage controller and the control switch of each pixel set the voltage of the charge-voltage conversion node of each pixel to the second voltage (VD—2) by using at least part of the horizontal scanning period.
摘要翻译：每个像素包括光电转换器，转换开关，充电电压转换节点，放大器和控制开关。固态图像传感器包括经由像素的控制开关来控制每个像素的电荷 - 电压转换节点的电压的电压控制器。由电压控制器通过控制开关设置在充电电压转换节点处的电压包括用于设置选择状态的像素的第一电压（VD-1）和用于将像素设置在第二电压未选择状态每个像素的电压控制器和控制开关通过使用水平扫描周期的至少一部分将每个像素的电荷 - 电压转换节点的电压设置为第二电压（VD-2）。

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