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51. 发明授权

US5471069A Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film 失效
标题翻译：具有由极薄的氧化物超导体膜形成的极短的超导通道的超导装置
公开(公告)号：US5471069A
公开(公告)日：1995-11-28
申请号：US242074
申请日：1994-05-13
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/146 , Y10S505/701
摘要： A superconducting device includes a superconducting channel constituted in an oxide superconductor the film deposited on a deposition surface of a substrate. A source electrode and a drain electrode are formed on the oxide superconductor thin film at opposite ends of the superconducting channel, so that a superconducting current can flow through be superconducting channel between the superconductor source electrode and the superconductor drain electrode. A gate electrode is formed through a gate insulator layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is in the form of a thin film and stands upright with respect to the gate insulator layer.
摘要翻译：超导装置包括在氧化物超导体中构成的超导通道，其沉积在基板的沉积表面上。在超导通道的相对端的氧化物超导体薄膜上形成源电极和漏电极，使得超导电流可以超导电源极和超导体漏电极之间流过超导通道。通过超导通道上的栅极绝缘体层形成栅电极，以便控制流过超导通道的超导电流。栅电极为薄膜形式，相对于栅极绝缘体层直立。

52. 发明授权

US5466664A Method for manufacturing a superconducting device having a thin superconducting channel formed of oxide superconductor material 失效
标题翻译：用于制造具有由氧化物超导体材料形成的薄超导通道的超导装置的方法
公开(公告)号：US5466664A
公开(公告)日：1995-11-14
申请号：US280833
申请日：1994-07-26
申请人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama
发明人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , B05D5/12
CPC分类号： H01L39/146 , Y10S505/702 , Y10S505/729
摘要： A method of manufacturing a superconducting device involves forming a thin film on the surface of a substrate, forming a superconducting gate electrode on a portion of the thin film, etching the portions of the thin film using the gate electrode as a mask thereby providing a superconducting channel under the gate, forming a step portion on the superconducting channel and under the gate, converting the oxide portion of the step portion into a gate insulation portion by heating the substrate in a vacuum, forming a second oxide superconducting film on the exposed surface of the channel so that superconducting source and drain electrodes are formed on each side of the gate such that the drain and source have a thickness greater than that of the channel and are electrically isolated from the gate electrode.
摘要翻译：制造超导装置的方法包括在衬底的表面上形成薄膜，在薄膜的一部分上形成超导栅电极，使用栅电极作为掩模蚀刻薄膜的部分，从而提供超导通道，在超导通道和栅极下形成台阶部分，通过在真空中加热基板将台阶部分的氧化物部分转变成栅绝缘部分，在第二氧化物超导膜的暴露表面上形成第二氧化物超导膜该沟道使得超导源极和漏极形成在栅极的每一侧上，使得漏极和源极的厚度大于沟道的厚度，并且与栅电极电隔离。

53. 发明授权

US5464812A Thin film of oxide superconductor possessing locally different crystal orientations and processes for preparing the same 失效
标题翻译：具有局部不同晶体取向的氧化物超导体的薄膜及其制备方法
公开(公告)号：US5464812A
公开(公告)日：1995-11-07
申请号：US201080
申请日：1994-02-24
申请人： Hiroshi Inada , Michitomo Iiyama
发明人： Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/24 , B32B9/00
CPC分类号： H01L39/2496 , H01L39/2422 , Y10S428/93 , Y10S428/936 , Y10S505/701 , Y10S505/731 , Y10T428/24926
摘要： A thin film of oxide superconductor consisting of more than two portions (10, 11, 12) each possessing a predetermined crystal orientation and deposited on a common surface of a substrate (2). At least one selected portion (10) of the thin film of oxide superconductor is deposited on a thin under-layer (4, 100) which facilitates crystal growth of the selected portion and which is deposited previously on the substrate. The selected portions (10) may consist of a-axis oriented thin film portions while non-selected portions (11, 12) may consists of c-axis oriented thin film portions. The thin under-layer can be a buffer layer (4) or a very thin film (100) of oxide superconductor.
摘要翻译：由多于两个部分（10,11,12）组成的氧化物超导体的薄膜，各自具有预定的晶体取向并沉积在基板（2）的共同表面上。氧化物超导体的薄膜的至少一个选定部分（10）沉积在薄的底层（4,100）上，其有利于所选择的部分的晶体生长并且预先沉积在衬底上。所选择的部分（10）可以由a轴取向薄膜部分组成，而非选择部分（11,12）可由c轴取向薄膜部分组成。薄的底层可以是氧化物超导体的缓冲层（4）或非常薄的薄膜（100）。

54. 发明授权

US5434127A Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer 失效
标题翻译：具有减小厚度的氧化物超导层的超导装置的制造方法
公开(公告)号：US5434127A
公开(公告)日：1995-07-18
申请号：US280123
申请日：1994-07-25
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/728
摘要： For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.
摘要翻译：为了制造超导装置，在基板的主表面上形成具有非常薄的厚度的第一c轴取向的氧化物超导薄膜，并且在绝缘体的一部分上形成栅极绝缘体和栅电极的层叠结构第一氧化物超导体薄膜。使用栅电极作为掩模来生长a轴取向的氧化物超导体薄膜，使得在栅电极的两侧形成具有较厚厚度的第二和第三超导区域，与栅电极电隔离。这样形成的超导器件可以用作超级FET。

55. 发明授权

US5430013A Superconducting thin film formed of oxide superconductor material, superconducting current path and superconducting device utilizing the superconducting thin film 失效
标题翻译：由氧化物超导体材料形成的超导薄膜，超导电流路径和利用超导薄膜的超导装置
公开(公告)号：US5430013A
公开(公告)日：1995-07-04
申请号：US327883
申请日：1994-10-24
申请人： Hiroshi Inada , Michitomo Iiyama
发明人： Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/00 , H01B12/06 , H01L39/24
CPC分类号： H01L39/228 , Y10S505/703 , Y10S505/704
摘要： A superconducting thin film formed on a substrate, comprising an a-axis orientated oxide superconductor layer, a c-axis orientated oxide superconductor layer and an oxide semiconductor layer inserted between the a-axis orientated oxide superconductor layer and the c-axis orientated oxide superconductor layer, in contact with them in which superconducting current can flow between the a-axis orientated oxide superconductor layer and the c-axis orientated oxide superconductor layer through the oxide semiconductor layer by a long-range proximity effect.
摘要翻译：形成在基板上的超导薄膜，其包括a轴取向的氧化物超导体层，c轴取向的氧化物超导体层和插入在a轴取向的氧化物超导体层和c轴取向的氧化物超导体之间的氧化物半导体层层，其中超导电流可以通过远距离邻近效应通过氧化物半导体层在a轴取向的氧化物超导体层和c轴取向的氧化物超导体层之间流动。

56. 发明授权

US5411919A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5411919A
公开(公告)日：1995-05-02
申请号：US293300
申请日：1994-08-22
申请人： Hiroshi Inada
发明人： Hiroshi Inada
IPC分类号： B81B1/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L21/02 , H01L29/84 , H01L21/60
CPC分类号： G01P15/0802 , G01P2015/0828
摘要： A semiconductor device such as a semiconductor acceleration sensor of an electrostatic capacity type and a method of manufacturing the same are disclosed, wherein a silicon layer is bonded to first and second glass layers by means of an anodic bonding process in such a manner as to be positioned between the first and second glass layers. The first glass layer has an overhung portion protruded from an edge of the second glass layer. At least an interconnection is formed between the silicon layer and the first glass layer and has a bonding pad positioned on the inner surface of the overhung portion of the first glass layer. Before the anodic bonding process, an anodic-bonding-inhibition-layer such as aluminum layer is positioned between a second glass wafer forming the second glass layer and a silicon wafer forming the silicon layer, and faces to a predetermined portion of a first glass wafer forming the first glass layer. The predetermined portion of the first glass wafer is to be the overhung portion of the first glass layer. During a dicing process after the anodic bonding process, the second glass wafer is cut along the configuration of the anodic-bonding-inhibition-layer, thereby removing an unnecessary portion of the second glass wafer facing to the overhung portion of the first glass layer from the remaining portions of the second glass wafer.
摘要翻译：公开了一种半导体装置，例如静电电容型的半导体加速度传感器及其制造方法，其中硅层通过阳极结合工艺以第一和第二玻璃层的形式结合，位于第一和第二玻璃层之间。第一玻璃层具有从第二玻璃层的边缘突出的悬垂部分。至少在硅层和第一玻璃层之间形成互连，并且具有位于第一玻璃层的悬垂部分的内表面上的焊盘。在阳极接合工艺之前，将形成第二玻璃层的第二玻璃晶片和形成硅层的硅晶片之间的铝层等阳极结合抑制层位于第一玻璃晶片的规定部分形成第一玻璃层。第一玻璃晶片的预定部分是第一玻璃层的悬垂部分。在阳极接合工序之后的切片工序中，沿着阳极结合抑制层的构造切断第二玻璃晶片，从而将与第一玻璃层的悬垂部分相对的第二玻璃晶片的不必要部分从第二玻璃晶片的剩余部分。

57. 发明授权

US4881474A Pulverized coal combustion apparatus 失效
标题翻译：粉煤燃烧设备
公开(公告)号：US4881474A
公开(公告)日：1989-11-21
申请号：US253675
申请日：1988-10-05
申请人： Osamu Okada , Shigeki Morita , Shigeto Nakashita , Tadahisa Masai , Shigeru Tominaga , Hiroshi Inada
发明人： Osamu Okada , Shigeki Morita , Shigeto Nakashita , Tadahisa Masai , Shigeru Tominaga , Hiroshi Inada
IPC分类号： F23C99/00 , F23D1/00
CPC分类号： F23D1/00
摘要： A pulverized coal combustion apparatus comprises a burner through which pulverized coal and carrier air are passed to be burnt in a combustion chamber, and a flame retainer disposed at an end of the burner. The flame retainer includes a flared tube and an annular plate, which plate has a plurality of radially inwardly projecting parts equiangularly spaced from each other. The annular plate comprises a plurality of ceramic pieces and a plurality of fastener elements, both of which are arranged and assembled alternately to form the annular plate. Each ceramic piece is so shaped that it projects radially inwardly to serve as the projecting part when assembled. The ceramic piece has at opposite sides thereof smoothly curved edge surfaces, and the fastener element has at opposite sides thereof smoothly curved edge surfaces which are engaged with the curved edge surfaces of neighboring two ceramic pieces.

58. 发明授权

US4746220A Screw type extruding or kneading machine and screw used therein 失效
标题翻译：螺杆式挤出或捏合机及其中使用的螺杆
公开(公告)号：US4746220A
公开(公告)日：1988-05-24
申请号：US852220
申请日：1986-04-15
申请人： Kiyoshi Sukai , Keizo Ichii , Shigeru Takane , Takayuki Yoshikawa , Hiroshi Inada , Takao Yamada
发明人： Kiyoshi Sukai , Keizo Ichii , Shigeru Takane , Takayuki Yoshikawa , Hiroshi Inada , Takao Yamada
IPC分类号： B29C47/60 , B29C47/66 , B01F7/08
CPC分类号： B29B7/428 , B29C47/0825 , B29C47/0844 , B29C47/60 , B29C47/66 , B29C47/0009 , B29K2105/12 , B29K2105/16 , B29K2909/02
摘要： The outer periphery of a screw and the inside of a barrel of a screw type extruding or kneading machine are made of ceramics, to improve the abrasion and heat resistances thereof, so that the screw and the barrel will operate for a longer life time even if a hard material or a material containing a hard material is worked.
摘要翻译：螺杆的外周和螺杆式挤出或捏合机的筒体内部由陶瓷制成，以改善其耐磨性和耐热性，使得螺杆和筒体将运行更长的使用寿命，即使加工硬质材料或含有硬质材料的材料。

59. 发明授权

US4259626A Servo control system operable on digital basis with limit cycle suppressed 失效
标题翻译：伺服控制系统可在数字基础上运行，限制循环被抑制
公开(公告)号：US4259626A
公开(公告)日：1981-03-31
申请号：US46291
申请日：1979-06-07
申请人： Tadashi Nomura , Hiroshi Inada
发明人： Tadashi Nomura , Hiroshi Inada
IPC分类号： B41J1/24 , B41J19/20 , G05B19/23 , H02P23/00 , G05B11/28
CPC分类号： B41J1/24 , B41J19/202 , G05B19/232 , H02P23/22 , G05B2219/37313 , G05B2219/41247 , G05B2219/42104
摘要： In a digital servo control system (31) for a carriage of a serial printer or a like movable element, a control signal (125) digitally represents a reference angular velocity for a motor (26) until an instant at which a displacement from a current position of the element to a commanded position decreases to a predetermined value, a positional error during a preselected interval following the instant, and an integrated value (52) of a position error between the current and the commanded positions to suppress limit cycle after the interval. A PWM signal (56-57) is derived from the control signal and position pulses (62 or 63) representative of a variation in the current position. Preferably, small-amplitude limit cycle is forced to occur during the interval with the positional error indicated by a modified signal (182) derived by adding unity to positive and zero position errors.
摘要翻译：在用于串行打印机或类似可移动元件的滑架的数字伺服控制系统（31）中，控制信号（125）数字地表示电动机（26）的参考角速度，直到从电流元件到命令位置的位置减小到预定值，在瞬间之后的预选间隔期间的位置误差以及当前和指令位置之间的位置误差的积分值（52），以抑制间隔之后的极限循环。 PWM信号（56-57）从控制信号和表示当前位置变化的位置脉冲（62或63）导出。优选地，在间隔期间强制发生小振幅极限循环，其中由通过将正和零位置误差加起来导出的修正信号（182）所指示的位置误差。

60. 发明授权

US08918880B2 Plant security managing device, managing method and managing program 有权
标题翻译：工厂安全管理设备，管理方法和管理程序
公开(公告)号：US08918880B2
公开(公告)日：2014-12-23
申请号：US13720214
申请日：2012-12-19
申请人： Keishin Saito , Hiroshi Inada , Takahiro Mori
发明人： Keishin Saito , Hiroshi Inada , Takahiro Mori
IPC分类号： G06F21/00 , G06F21/56
CPC分类号： G06F21/561 , G06F21/56
摘要： A technology is provided which ensures a high security without affecting a plant operation. A plant security managing device includes a determining unit that determines which one of control units multiplexed as a service system and a standby system associated with monitoring and controlling of a plant is the standby system, a security processing unit that performs a security process for detecting the presence/absence of a security abnormality on the control unit that is the standby system, and a change instructing unit that outputs an instruction for changing the control unit that is the standby system and the control unit that is the service system with each other after the completion of the security process by the security processing unit.
摘要翻译：提供了一种确保高安全性而不影响设备运行的技术。工厂安全管理装置包括确定单元，其确定多路复用为服务系统的控制单元中的哪一个以及与工厂的监视和控制相关联的备用系统是备用系统;安全处理单元，执行用于检测在作为备用系统的控制单元上存在/不存在安全异常;以及改变指示单元，其在经过所述待机系统的控制单元之后输出用于改变作为所述备用系统的控制单元和作为所述服务系统的所述控制单元的指令安全处理单元完成安全过程。

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