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    • 51. 发明申请
    • Making organic thin film transistor array panels
    • 制造有机薄膜晶体管阵列面板
    • US20070158651A1
    • 2007-07-12
    • US11541254
    • 2006-09-29
    • Keun-Kyu SongTae-Young Choi
    • Keun-Kyu SongTae-Young Choi
    • H01L29/04H01L21/84
    • H01L27/283H01L27/1214H01L27/3244H01L51/0516H01L51/0545
    • An organic thin film transistor (OTFT) array panel includes a substrate, a data line formed on the substrate, a source electrode connected with the data line, a drain electrode, including a portion facing the source electrode, an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole, an organic semiconductor positioned in the opening and at least partially contacting the source electrode and the drain electrode, a gate insulator formed on the organic semiconductor, a stopper formed on the gate insulator, a gate line crossing over the data line and including a gate electrode formed on the stopper, and a pixel electrode connected to the drain electrode through the contact hole.
    • 有机薄膜晶体管(OTFT)阵列面板包括基板,形成在基板上的数据线,与数据线连接的源电极,漏电极,包括面对源电极的部分,形成在源极上的绝缘层 电极和漏极,并具有开口和接触孔,位于开口中并且至少部分地接触源电极和漏电极的有机半导体,形成在有机半导体上的栅极绝缘体,形成在栅极绝缘体上的阻挡层 在数据线上交叉并且包括形成在该止动器上的栅极电极的栅极线以及通过接触孔与漏电极连接的像素电极。
    • 52. 发明申请
    • Organic thin film transistor array panel
    • 有机薄膜晶体管阵列面板
    • US20070109457A1
    • 2007-05-17
    • US11599907
    • 2006-11-14
    • Keun-Kyu SongSeung-Hwan Cho
    • Keun-Kyu SongSeung-Hwan Cho
    • G02F1/136
    • H01L27/283H01L51/0541
    • An OTFT array panel comprises a substrate; a data line formed on the substrate; a source electrode connected to the data line; a drain electrode including a portion facing the source electrode; a first organic semiconductor partially overlapping the source electrode and the drain electrode; a first gate insulating member formed on the first organic semiconductor; a blocking member formed on the first gate insulating member; a pixel electrode formed on the same layer as the blocking member and connected to the drain electrode; a gate line including the gate electrode, intersecting the data line, and formed on the blocking member and a method of manufacturing the same.
    • OTFT阵列面板包括衬底; 形成在所述基板上的数据线; 连接到数据线的源电极; 漏极,包括面向所述源电极的部分; 与源电极和漏电极部分重叠的第一有机半导体; 形成在所述第一有机半导体上的第一栅极绝缘构件; 形成在所述第一栅极绝缘构件上的阻挡构件; 形成在与阻挡构件相同的层上并连接到漏电极的像素电极; 包括栅电极的栅极线,与数据线交叉并形成在阻挡构件上,以及制造该栅极线的方法。
    • 53. 发明申请
    • Thin film transistor arrray panel and a repairing method thereof
    • 薄膜晶体管阵列板及其修复方法
    • US20070052878A1
    • 2007-03-08
    • US11518560
    • 2006-09-07
    • Keun-Kyu SongHyung-Il Jeon
    • Keun-Kyu SongHyung-Il Jeon
    • G02F1/1333
    • G02F1/136259G02F2001/136272
    • According to an embodiment of the present invention, a thin film transistor array panel includes: an insulating substrate; a plurality of gate lines formed on the insulating substrate; a plurality of repairing lines formed on the same layer as the gate lines; a gate insulating layer formed on the gate lines and the repairing lines; a plurality of data lines formed on the gate insulating layer; a plurality of drain electrodes separated from the data lines and formed on the gate insulating layer; a passivation layer formed on the data lines and the drain electrodes; and a plurality of pixel electrodes formed on the passivation layer and connected to the drain electrodes, wherein the data lines include a first and a second data lines and a connecting bridge therebetween.
    • 根据本发明的实施例,薄膜晶体管阵列面板包括:绝缘基板; 形成在所述绝缘基板上的多个栅极线; 形成在与栅极线相同的层上的多条修复线; 形成在栅极线和修补线上的栅极绝缘层; 形成在所述栅极绝缘层上的多条数据线; 与数据线分离并形成在栅极绝缘层上的多个漏电极; 形成在数据线和漏电极上的钝化层; 以及形成在所述钝化层上并连接到所述漏电极的多个像素电极,其中所述数据线包括第一和第二数据线及其间的连接桥。
    • 54. 发明申请
    • Organic thin film transistor display panel
    • 有机薄膜晶体管显示面板
    • US20070024766A1
    • 2007-02-01
    • US11495835
    • 2006-07-28
    • Keun-Kyu SongYong-Uk Lee
    • Keun-Kyu SongYong-Uk Lee
    • G02F1/136
    • H01L51/0545H01L27/283H01L51/102
    • An organic thin film transistor array panel according to an embodiment of the present invention includes forming a gate line on an insulating plastic or glass substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer, the data line and the drain electrode comprising a first conductive film and a second conductive film of indium tin oxide (ITO) or indium zinc oxide (IZO) that has a work function similar to that of the organic semiconductor that is deposited overlapping the data line and the drain electrode; forming a passivation layer on the organic semiconductor; and forming a pixel electrode connected to the drain electrode on the passivation and the gate insulating layer.
    • 根据本发明实施例的有机薄膜晶体管阵列板包括在绝缘塑料或玻璃基板上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成数据线和漏电极,所述数据线和所述漏极包括第一导电膜和具有功函数的氧化铟锡(ITO)或氧化铟锌(IZO)的第二导电膜 类似于沉积与数据线和漏极重叠的有机半导体; 在有机半导体上形成钝化层; 以及在所述钝化层和所述栅极绝缘层上形成连接到所述漏电极的像素电极。