专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08392758B2 Remedying method for problems in virtual server system and system thereof 有权
标题翻译：虚拟服务器系统问题的补救方法及其系统
公开(公告)号：US08392758B2
公开(公告)日：2013-03-05
申请号：US13077408
申请日：2011-03-31
申请人： Kentaro Watanabe , Yoshimasa Masuoka
发明人： Kentaro Watanabe , Yoshimasa Masuoka
IPC分类号： G06F11/00
CPC分类号： G06F11/1461 , G06F11/1438 , G06F11/1484
摘要： According to the invention, a managing server, using a snapshot-appended information table which stores management information for identifying snapshots of a virtual server, a setting change table which stores setting change information on the virtual server, and a policy table which stores policies to be met by the virtual server, acquires the setting change information from the setting change table, selects the setting change information items from the acquired setting change information matching policies stored in the policy table, acquires management information on the snapshots of the virtual server from the snapshot-appended information table, identifies a snapshot of the virtual server with reference to the acquired management information, changes the identified snapshot of the virtual server based on the selected setting change information items, and rolls back the virtual server according to the changed snapshot.
摘要翻译：根据本发明，使用存储用于识别虚拟服务器的快照的管理信息的快照附加信息表的管理服务器，在虚拟服务器上存储设置变更信息的设置变更表以及存储策略的策略表由虚拟服务器满足，从设定变更表获取设定变更信息，从存储在策略表中的所获取的设定变更信息匹配规则中选择设定变更信息项，从虚拟服务器的快照获取关于虚拟服务器的快照的管理信息快照附加信息表，参照获取的管理信息来识别虚拟服务器的快照，基于所选择的设置改变信息项来改变所识别的虚拟服务器的快照，并根据改变的快照回滚虚拟服务器。

52. 发明申请

US20120221611A1 MANAGEMENT SERVER, MANAGEMENT METHOD, AND MANAGEMENT PROGRAM FOR VIRTUAL HARD DISK 有权
标题翻译：虚拟硬盘的管理服务器，管理方法和管理程序
公开(公告)号：US20120221611A1
公开(公告)日：2012-08-30
申请号：US13390949
申请日：2010-06-16
申请人： Kentaro Watanabe , Mineyoshi Masuda
发明人： Kentaro Watanabe , Mineyoshi Masuda
IPC分类号： G06F17/30
CPC分类号： G06F3/0644 , G06F3/0608 , G06F3/0643 , G06F3/0664 , G06F3/0671
摘要： A file system corresponding to virtual hard disk files is identified, and a file size of the virtual hard disk files after optimization is calculated from the size of the volume in use of the file system so that a volume size can be ensured by the optimization is calculated. Specifically, a management server performs the above-described processing, and has the following structure. The management server is connected to a physical server that is virtually composed of virtual servers including virtual had disks. The management server comprises a volume acquiring unit that acquires the volume in use of a first file system on the virtual hard disks; a file size acquiring unit that acquires the file size of virtual hard disk files corresponding to the first file system; and a calculating unit that calculates an optimized file size of the virtual hard disk files on the basis of a difference between the acquired volume in use and the file size.
摘要翻译：识别与虚拟硬盘文件相对应的文件系统，根据使用文件系统的卷的大小计算优化后的虚拟硬盘文件的文件大小，以便可以通过优化确保卷大小计算。具体而言，管理服务器进行上述处理，具有以下结构。管理服务器连接到由虚拟服务器虚拟组成的物理服务器，包括虚拟磁盘。管理服务器包括：体积获取单元，其在虚拟硬盘上获取使用第一文件系统的卷; 文件大小获取单元，其获取与所述第一文件系统相对应的虚拟硬盘文件的文件大小; 以及计算单元，其基于所获取的使用量和文件大小之间的差异来计算虚拟硬盘文件的优化文件大小。

53. 再颁专利

USRE43067E1 Method for producing new polynuclear poly(formylphenol) 有权
标题翻译：生产新型多核聚（甲酰苯酚）的方法
公开(公告)号：USRE43067E1
公开(公告)日：2012-01-03
申请号：US12984215
申请日：2007-05-31
申请人： Akira Yoshitomo , Tatsuya Iwai , Kentaro Watanabe
发明人： Akira Yoshitomo , Tatsuya Iwai , Kentaro Watanabe
IPC分类号： C07C45/00
CPC分类号： C07C47/57 , C07C45/565
摘要： Produce the target substance, or a polynuclear poly(formylphenol) expressed by General Formula (2), in an industrial setting with ease and at high purity by causing a polynuclear poly(hydroxymethylphenol) or polynuclear poly(alkoxymethylphenol) to react with hexamethylene tetramine in the presence of an acid and then hydrolyzing the obtained reaction product.
摘要翻译：通过使多核聚（羟基甲基苯酚）或多核聚（烷氧基甲基苯酚）与六亚甲基四胺进行反应，在工业设置中通过使多元醇（羟基甲基苯酚）或多核聚（烷氧基甲基苯酚）与六亚甲基四胺反应生成目标物质或由通式（2）表示的多核聚（甲酰苯酚）酸的存在，然后水解所得反应产物。

54. 发明申请

US20090182866A1 Method of setting and managing performance monitoring conditions and computer system using the method 审中-公开
标题翻译：使用该方法设置和管理性能监测条件和计算机系统的方法
公开(公告)号：US20090182866A1
公开(公告)日：2009-07-16
申请号：US12149089
申请日：2008-04-25
申请人： Kentaro Watanabe , Yoshimasa Masuoka
发明人： Kentaro Watanabe , Yoshimasa Masuoka
IPC分类号： G06F15/173
CPC分类号： G06F11/3409 , G06F11/3495 , G06F2201/81
摘要： In order to change a policy while alarm-monitoring a production environment, during a production-environment operation, a method of controlling a computer system is provided, in which a policy is temporarily changed, thereby performing setting change. An agent transmits a monitoring result based on a first monitoring condition. A management unit generates a second monitoring condition based on a received change request. The agent transmits a monitoring result based on the second monitoring condition. The management unit holds information for correlating the first and second monitoring conditions with each other. Upon reception of a confirmation request for confirming the second monitoring condition, the management unit specifies the first monitoring condition correlated with the second monitoring condition based on the information. The agent which has received the deletion request stops the transmission of the monitoring result based on the first monitoring condition.
摘要翻译：为了在监视生产环境的同时更改策略，在生产环境操作期间，提供了一种控制计算机系统的方法，其中策略被暂时改变，从而执行设置改变。代理根据第一监视条件发送监视结果。管理单元基于接收到的改变请求生成第二监视条件。代理根据第二监视条件发送监视结果。管理单元保持使第一和第二监视条件相互关联的信息。在接收到确认第二监视条件的确认请求时，管理单元基于该信息指定与第二监视条件相关的第一监视条件。接收到删除请求的代理基于第一监视条件停止监视结果的发送。

55. 发明申请

US20090086393A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR PROTECTING SEMICONDUCTOR DEVICE 失效
标题翻译：用于保护半导体器件的静电放电保护电路
公开(公告)号：US20090086393A1
公开(公告)日：2009-04-02
申请号：US12236045
申请日：2008-09-23
申请人： Kentaro Watanabe
发明人： Kentaro Watanabe
IPC分类号： H02H9/04
CPC分类号： H02H9/046
摘要： A discharge circuit holds the potential difference between a power supply terminal and reference potential terminal at a predetermined value. The gates of a first pMOSFET and first nMOSFET are connected to an input terminal. A second pMOSFET is connected between the first pMOSFET and power supply terminal, and has a gate to which a first signal is supplied. A second nMOSFET is connected between the first nMOSFET and reference potential terminal, and has a gate to which a second signal is supplied. A detection circuit outputs the first signal which turns on the second pMOSFET and the second signal which turns on the second nMOSFET, while the potential difference is held at the predetermined value. The detection circuit outputs the first signal which turns off the second pMOSFET and the second signal which turns off the second nMOSFET, while the potential difference deviates from the predetermined value.
摘要翻译：放电电路将电源端子和参考电位端子之间的电位差保持在预定值。第一pMOSFET和第一nMOSFET的栅极连接到输入端。第二个pMOSFET连接在第一个pMOSFET和电源端子之间，并具有一个提供第一个信号的栅极。第二nMOSFET连接在第一nMOSFET和参考电位端之间，并且具有提供第二信号的栅极。检测电路输出导通第二pMOSFET的第一信号和导通第二nMOSFET的第二信号，同时电位差保持在预定值。检测电路输出关闭第二pMOSFET的第一信号和关闭第二nMOSFET的第二信号，同时电位差偏离预定值。

56. 发明申请

US20080313591A1 SEMICONDUCTOR INTEGRATED CIRCUIT DESIGNING METHOD 有权
标题翻译：半导体集成电路设计方法
公开(公告)号：US20080313591A1
公开(公告)日：2008-12-18
申请号：US12136230
申请日：2008-06-10
申请人： Kentaro Watanabe
发明人： Kentaro Watanabe
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F2217/78 , H01L27/0251
摘要： An IC designing method includes planning placement of a first isolated-power supplied region operating between common ground and power bus lines during a normal operation, and second/third isolated-power supplied regions each operating between the common ground bus line and first/second isolated power lines and supplied with potentials different from the common power supply, planning placement of first electrostatic protection circuits connected between the common ground power bus lines and between the common ground bus line and the first/second isolated power lines, and second electrostatic protection circuits connected between the first/second isolated power lines and the common power bus lines, judging presence of a signal transmission between non-adjacent regions among the first to third isolated-power supplied regions, and amending the circuit to insert a buffer circuit powered by the common power bus line in a transmission path when the signal transmission is present.
摘要翻译： IC设计方法包括在正常操作期间规划在公共接地和电源总线之间工作的第一隔离电源供应区域的布置以及在公共地线总线与第一/第二隔离之间工作的第二/第三隔离电源供应区域电源线并提供与公共电源不同的电位，规划连接在公共地电源总线之间以及公共接地总线与第一/第二隔离电源线之间的第一静电保护电路的布置，以及连接的第二静电保护电路在第一/第二隔离电源线和公共电源总线之间，判断在第一至第三隔离电源提供区域之间的非相邻区域之间的信号传输的存在，以及修改电路以插入由公共电源供电的缓冲电路当信号传输存在时，传输路径中的电力总线线路。

57. 发明授权

US07394631B2 Electrostatic protection circuit 失效
标题翻译：静电保护电路
公开(公告)号：US07394631B2
公开(公告)日：2008-07-01
申请号：US11511520
申请日：2006-08-29
申请人： Kentaro Watanabe , Koichi Sato , Takayuki Hiraoka
发明人： Kentaro Watanabe , Koichi Sato , Takayuki Hiraoka
IPC分类号： H02H3/22
CPC分类号： H01L27/0266
摘要： An electrostatic protection circuit including: a first power supply terminal 110; a second power supply terminal 112; an input-output terminal 111 for an external connection; a P-type MOSFET for a buffer 108 for pulling up input and output to a high-level potential; an N-type MOSFET for the buffer 107 for pulling down the input and output to a low-level potential; a rectifying element 109 connected between the first and second power supply terminals; a detector 101 for comparing the potential of the input-output terminal 111 to the potential of the first power supply terminal 110 to detect whether or not an electrostatic surge is flowing in; and controllers 105 and 106, wherein the controllers 105 and 106 control a gate potential of the N-type MOSFET 107 for the buffer when the detector 101 detects inflow of the electrostatic surge and turn off the N-type MOSFET 107 for the buffer. Discharge of the electrostatic surge is performed through a parasitic bipolar junction transistor 121 formed on the N-type MOSFET 107.
摘要翻译：一种静电保护电路，包括：第一电源端子110; 第二电源端子112; 用于外部连接的输入 - 输出端子111; 用于缓冲器108的P型MOSFET，用于将输入和输出提升到高电平电位; 用于缓冲器107的N型MOSFET，用于将输入和输出降低到低电平电位; 连接在第一和第二电源端子之间的整流元件109; 用于将输入输出端子111的电位与第一电源端子110的电位进行比较以检测静电浪涌是否流入的检测器101; 以及控制器105和106，其中当检测器101检测到静电浪涌的流入并关闭用于缓冲器的N型MOSFET 107时，控制器105和106控制用于缓冲器的N型MOSFET 107的栅极电位。通过形成在N型MOSFET 107上的寄生双极结型晶体管121进行静电浪涌的放电。

58. 发明申请

US20080094767A1 SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC PROTECTION CIRCUIT 失效
标题翻译：具有静电保护电路的半导体器件
公开(公告)号：US20080094767A1
公开(公告)日：2008-04-24
申请号：US11870681
申请日：2007-10-11
申请人： Kentaro Watanabe
发明人： Kentaro Watanabe
IPC分类号： H02H9/00
CPC分类号： H01L27/0285 , H01L2224/05554 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： This invention discloses a semiconductor device including a first buffer MOSFET of a first conductivity type, a second buffer MOSFET of a second conductivity type, an ESD protection circuit, an external input terminal, and a control circuit. The external input terminal capacitively couples to a terminal to which a second potential is applied, and receives the first potential or second potential in a normal operation mode. The control circuit includes a prebuffer which controls the gates of the first and second buffer MOSFETs on the basis of the potential of the external input terminal in the normal operation mode and fixes the external input terminal to the second or first potential by capacitive coupling upon ESD surge application, thereby fixing the gate of the second buffer MOSFET to the second or first potential and turning off the second buffer MOSFET.
摘要翻译：本发明公开了一种包括第一导电类型的第一缓冲MOSFET，第二导电类型的第二缓冲MOSFET，ESD保护电路，外部输入端和控制电路的半导体器件。外部输入端子电容耦合到施加有第二电位的端子，并且以正常操作模式接收第一电位或第二电位。该控制电路包括一个预缓冲器，它基于外部输入端在正常操作模式下的电位来控制第一和第二缓冲MOSFET的栅极，并通过静电电容耦合将外部输入端固定到第二或第一电位浪涌应用，从而将第二缓冲MOSFET的栅极固定到第二或第一电位并且关断第二缓冲MOSFET。

59. 发明授权

US06956747B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06956747B1
公开(公告)日：2005-10-18
申请号：US11051729
申请日：2005-02-04
申请人： Naoyuki Shigyo , Takayuki Hiraoka , Kentaro Watanabe
发明人： Naoyuki Shigyo , Takayuki Hiraoka , Kentaro Watanabe
IPC分类号： H01L23/485 , H01L23/522 , H01L23/528 , H01L23/60 , H05K1/11 , H05K1/14
CPC分类号： H01L24/05 , H01L23/5223 , H01L23/5286 , H01L23/60 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014
摘要： There is disclosed a semiconductor device comprising at least one first pad being formed above a substrate and given a first potential, at least one first conductive layer being formed between the first pad and the substrate so as to be electrically connected to the first pad, at least one second pad being formed above the substrate so as to sandwich the at least one first conductive layer between the second pad and the substrate, and given a second potential different from the first potential, at least one second conductive layer being formed between the first and second pads and the substrate so as to be electrically connected to the second pad, and a plurality of insulating layers being stacked on the substrate and at least one of the insulating layers being as an inter-electrode insulator of a capacitance element.
摘要翻译：公开了一种半导体器件，包括至少一个第一焊盘，其形成在衬底上并具有第一电位，至少一个第一导电层形成在第一焊盘和衬底之间，以便电连接到第一焊盘，至少一个第二焊盘形成在所述衬底上方，以将所述至少一个第一导电层夹在所述第二焊盘和所述衬底之间，并且给予不同于所述第一电位的第二电位，至少一个第二导电层形成在所述第一以及第二焊盘和所述衬底，以便电连接到所述第二焊盘，并且多个绝缘层堆叠在所述衬底上，并且所述绝缘层中的至少一个作为电容元件的电极间绝缘体。

60. 发明授权

US06913094B2 Leading body for ground drilling and ground drilling machine 失效
标题翻译：地面钻井和地面钻井机械领导机构
公开(公告)号：US06913094B2
公开(公告)日：2005-07-05
申请号：US10453327
申请日：2003-06-02
申请人： Toyohiko Youan , Kentaro Watanabe , Eiichi Muramoto , Touru Hishiyama
发明人： Toyohiko Youan , Kentaro Watanabe , Eiichi Muramoto , Touru Hishiyama
IPC分类号： E21B7/02 , E21B7/06 , E21B7/08 , E21D9/06 , F16L1/024 , E21B10/60
CPC分类号： E21B7/064
摘要： A leading body for a ground drilling machine is provided which includes a main body which is tapered at a front end thereof to form a first sloped surface and a second sloped surface on opposite sides of the front end of the main body. A slant-cutting section extends from the main body substantially along the first sloped surface. And injection ports which are adapted to inject digging liquid are positioned in the slant-cutting section such that the injection ports inject digging liquid rearward with respect to a propelling direction of the leading body along an obtuse angle with respect to a rotation axis of the leading body and substantially along the second sloped surface.
摘要翻译：提供了一种地面钻孔机的引导体，其包括：主体，其主体在其前端呈锥形，以在主体的前端的相对侧上形成第一倾斜表面和第二倾斜表面。倾斜切割部分从主体基本沿着第一倾斜表面延伸。并且适于注入挖掘液体的注入口位于倾斜切割部分中，使得注射口相对于前导体的推进方向向后注入挖掘液体，该引导体相对于引导件的旋转轴线呈钝角并且基本上沿着第二倾斜表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式