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    • 52. 发明授权
    • Semiconductor device having a complementary field effect transistor
    • 具有互补场效应晶体管的半导体器件
    • US08222952B2
    • 2012-07-17
    • US12662038
    • 2010-03-29
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • H03K3/01
    • H03K19/00361H03K19/0008H03K2217/0018
    • A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value.
    • 半导体器件防止互补场效应晶体管的截止电流随着环境温度的变化而变化。 半导体器件包括:衬底电压产生电路,其产生形成CMOS的n沟道MOS晶体管的衬底电压; 复制晶体管,其是n沟道MOS晶体管的复制品,并且是二极管连接的; 以及在复制晶体管的阳极和阴极之间施加预定电压值的电压的施加电压器。 在该半导体器件中,复制晶体管的衬底电压是由衬底电压产生电路产生的衬底电压。 衬底电压产生电路控制要产生的衬底电压,使得流入复制晶体管的电流的电流值等于给定的目标值。
    • 53. 发明授权
    • File management system
    • 文件管理系统
    • US08171062B2
    • 2012-05-01
    • US12219097
    • 2008-07-16
    • Koichi HachioHitoshi TanakaMakoto Nakamoto
    • Koichi HachioHitoshi TanakaMakoto Nakamoto
    • G06F12/00G06F17/30
    • G06F17/30115
    • Since both a physical storage place and a logical storage place in a storage system are separately managed as a directory structure, or a hierarchical structure, even in such a case that the physical storage place has been changed, the logical storage place which is displayed to the user is not changed, and thus, the user can use the file while the user need not become aware of the change of the file. When the contents of a file is displayed, a physical storage destination of the file is acquired based upon both a reference path and a relative path of the file, and then, the file is acquired from the physical storage destination.
    • 由于存储系统中的物理存储位置和逻辑存储位置都作为目录结构或层次结构分别管理,即使在物理存储位置已经改变的情况下,显示的逻辑存储位置 用户没有改变,因此用户可以在用户不需要知道文件的改变的情况下使用该文件。 当显示文件的内容时,基于​​文件的参考路径和相对路径获取文件的物理存储目的地,然后从物理存储目的地获取文件。
    • 56. 发明授权
    • Automatic transmission
    • 自动变速器
    • US07832306B2
    • 2010-11-16
    • US11227091
    • 2005-09-16
    • Fuminori SuzukiHitoshi Tanaka
    • Fuminori SuzukiHitoshi Tanaka
    • F16H57/02
    • F16H61/0006B60R16/0207F16H61/0021Y10T74/2186
    • A housing is constructed of a transmission case and an oil pan and has a space therein. A through hole passes through the transmission case. A pressure control unit is housed in the housing and controls hydraulic pressure supplied to a transmission mechanism by the operation of a solenoid valve. An internal cable is housed in the housing and is electrically connected to the solenoid valve of the pressure control unit. An external cable is electrically connected to an engine control unit outside the housing. A connector is arranged in such a way as to pass through the through hole and is electrically connected to the internal cable and the external cable. The connector has an external exposed portion, which is exposed outside the housing, formed in such a way as to be able to pass through the through hole.
    • 壳体由变速箱和油底壳构成,其中具有空间。 通孔穿过变速箱。 压力控制单元容纳在壳体中,并通过电磁阀的操作来控制供给传动机构的液压。 内部电缆容纳在壳体中并且电连接到压力控制单元的电磁阀。 外部电缆与壳体外部的发动机控制单元电连接。 连接器布置成穿过通孔并且电连接到内部电缆和外部电缆。 连接器具有暴露在壳体外部的外部暴露部分,以能够穿过通孔的方式形成。
    • 57. 发明申请
    • Semiconductor device having a complementary field effect transistor
    • 具有互补场效应晶体管的半导体器件
    • US20100244936A1
    • 2010-09-30
    • US12662038
    • 2010-03-29
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • G05F1/10
    • H03K19/00361H03K19/0008H03K2217/0018
    • A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value.
    • 半导体器件防止互补场效应晶体管的截止电流随着环境温度的变化而变化。 半导体器件包括:衬底电压产生电路,其产生形成CMOS的n沟道MOS晶体管的衬底电压; 复制晶体管,其是n沟道MOS晶体管的复制品,并且是二极管连接的; 以及在复制晶体管的阳极和阴极之间施加预定电压值的电压的施加电压器。 在该半导体器件中,复制晶体管的衬底电压是由衬底电压产生电路产生的衬底电压。 衬底电压产生电路控制要产生的衬底电压,使得流入复制晶体管的电流的电流值等于给定的目标值。
    • 58. 发明申请
    • VARISTOR
    • US20090243768A1
    • 2009-10-01
    • US12396942
    • 2009-03-03
    • Hiroyuki SatoMakoto NumataYo SaitoHitoshi TanakaGoro TakeuchiOsamu TaguchiRyuichi Tanaka
    • Hiroyuki SatoMakoto NumataYo SaitoHitoshi TanakaGoro TakeuchiOsamu TaguchiRyuichi Tanaka
    • H01H83/00
    • H01C7/102
    • A first varistor section includes a first face of an element body, and a third face facing the first face. The first varistor section has a first varistor element body, a first varistor electrode electrically connected to a first external electrode, and a second varistor electrode electrically connected to a second external electrode. A heat radiation section has a first heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the first and third external electrodes, a second heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the second and fourth external electrodes, and an insulating layer located between the first heat radiation portion and the second heat radiation portion and electrically insulating the first heat radiation portion and the second heat radiation portion from each other. The first heat radiation portion and the second heat radiation portion contain a metal.
    • 第一变阻器部分包括元件主体的第一面和面向第一面的第三面。 第一变阻器部具有第一变阻器元件本体,与第一外部电极电连接的第一变阻器电极和与第二外部电极电连接的第二变阻器电极。 散热部具有与第一可变电阻部的第三面保持接触并与第一和第三外部电极电连接的第一散热部,与第一可变电阻部的第三面保持接触的第二散热部 并且电连接到第二和第四外部电极,以及位于第一散热部分和第二散热部分之间的绝缘层,并且使第一散热部分和第二散热部分彼此电绝缘。 第一散热部和第二散热部包含金属。
    • 60. 发明授权
    • Fluid circuit module and automatic transmission
    • 流体回路模块和自动变速器
    • US07520835B2
    • 2009-04-21
    • US11213897
    • 2005-08-30
    • Fuminori SuzukiHitoshi Tanaka
    • Fuminori SuzukiHitoshi Tanaka
    • B60W10/00
    • G05D7/0635F16H61/0009Y10T137/8326Y10T477/60
    • A fluid circuit module controls a fluid to be supplied to a movable element in an automatic transmission. The fluid circuit module is provided with a first body in which a first flow passage is formed, a second body in which a second flow passage is formed. A separation plate is set between the first body and the second body and has a deformation portion that is deformed and strained in accordance with the difference between pressures in the first flow passage and the second flow passage. A strain sensor is attached to the deformation portion for detecting a strain of the deformation portion. A control means controls a supply fluid to be supplied to the movable element on the basis of a detection result of the strain sensor.
    • 流体回路模块控制供给到自动变速器中的可移动元件的流体。 流体回路模块设置有形成有第一流路的第一主体,形成有第二流路的第二主体。 分隔板设置在第一主体和第二主体之间,并具有根据第一流路和第二流路中的压力差而变形并变形的变形部。 应变传感器附接到变形部分,用于检测变形部分的应变。 控制装置根据应变传感器的检测结果控制供给到可动元件的供给流体。