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51. 发明授权

US5955240A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US5955240A
公开(公告)日：1999-09-21
申请号：US738784
申请日：1996-10-29
申请人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (M.sub.w /M.sub.n) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（C）有机羧酸化合物和（ D）胺，其中所述树脂组分（A）是包含（a）重均分子量为8,000至25,000的聚羟基苯乙烯和分子量分布（Mw / Mn）为1.5以下的混合物，其中， 10〜60mol％的羟基已被通式（I）的残基取代：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示低级烷基具有1至4个碳原子; 和（b）重均分子量为8,000〜25,000，分子量分布（Mw / Mn）为1.5以下的聚羟基苯乙烯，其中10〜60摩尔％的羟基已被叔丁氧羰基氧基团体该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

52. 发明授权

US5945517A Chemical-sensitization photoresist composition 失效
标题翻译：化学增感光刻胶组合物
公开(公告)号：US5945517A
公开(公告)日：1999-08-31
申请号：US119640
申请日：1998-07-21
申请人： Kazuyuki Nitta , Kazufumi Sato , Toshiharu Shimamaki , Kunio Hayakawa , Shin-ya Kuramoto
发明人： Kazuyuki Nitta , Kazufumi Sato , Toshiharu Shimamaki , Kunio Hayakawa , Shin-ya Kuramoto
IPC分类号： G03F7/004 , C07D407/02 , C07C245/14
CPC分类号： G03F7/0045
摘要： Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photo-sensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formulaR.sup.1 --SO.sub.2 --C(=N.sub.2)--SO.sub.2 --R.sup.2,in which R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group substituted on the cyclic nucleus by an acid-dissociable group such as a tert-butoxycarbonyl and acetal groups. Several novel diazomethane compounds are disclosed.
摘要翻译：提出了一种正性或负性工作的化学增感光致抗蚀剂组合物，其在图案化抗蚀剂层的图案的对比度和分辨率，光敏感性和横截面轮廓方面以及在形成的潜像的稳定性方面具有优势在曝光前烘烤处理下通过图案曝光。该组合物包含：（A）100重量份成膜树脂成分，其通过与酸的相互作用而引起在碱性水溶液中的溶解度的改变，即增加或减少; 和（B）0.5〜20重量份的辐射敏感性产酸剂，其为通式为R 1 -SO 2 -C（= N 2）-SO 2 -R 2表示的重氮甲烷化合物，其中R 1和R 2各自为独立地是通过酸解离基团如叔丁氧基羰基和缩醛基团在环状核上取代的一价环状基团。公开了几种新的重氮甲烷化合物。

53. 发明授权

US5929271A Compounds for use in a positive-working resist composition 失效
标题翻译：用于正性抗蚀剂组合物的化合物
公开(公告)号：US5929271A
公开(公告)日：1999-07-27
申请号：US912123
申请日：1997-08-15
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C69/013 , G03F7/004 , G03F7/039 , C07C69/74
CPC分类号： C07C69/013 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Proposed is novel compounds for use in a chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which causes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo�3.1.1!heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
摘要翻译：提出了用于制造精细电子器件的光刻图案化方法中使用的化学增感正性光致抗蚀剂组合物中的新化合物，其能够赋予ArF准分子激光束具有高光敏性的图案化抗蚀剂层，其具有具有优异的正交横截面轮廓和高耐干腐蚀性，并且对基材表面表现出良好的粘合性。虽然组合物包含（A）通过与酸相互作用引起碱溶解度增加的成膜树脂成分和（B）辐射敏感的酸产生剂，但是本发明的最特征在于使用作为组分（A）的特定丙烯酸树脂，其包含未被取代或被烷基如羟基酮（甲基）丙烯酸酯取代的羟基双环[3.1.1]庚酮的（甲基）丙烯酸酯的单体单元，与来自（甲基）丙烯酸和/或（甲基）丙烯酸叔丁酯的单体单元组合，摩尔分数为3:7至7:3。

54. 发明授权

US5874195A Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US5874195A
公开(公告)日：1999-02-23
申请号：US966791
申请日：1997-11-10
申请人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , G03F7/30
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Proposed is a novel positive-working photoresist composition of the chemical sensitization type capable of giving a finely patterned resist layer having an excellent cross sectional profile even for a discretely isolated pattern with high sensitivity and high resolution. The composition comprises, besides (a) a compound generating an acid by the irradiation with actinic rays, (b) a resinous ingredient capable of being imparted with increased solubility in an alkaline developer solution in the presence of an acid and (c) an organic solvent which is a ketone, ether or ester as the basic ingredients of the chemical sensitization type photoresist compositions, (d) an N,N-dialkyl carboxylic acid amide such as N,N-dimethyl formamide and N,N-dimethyl acetamide in a specified proportion relative to the component (b).
摘要翻译：提出了一种新型的化学增感型正性光致抗蚀剂组合物，即使对于具有高灵敏度和高分辨率的离散隔离图案，也能够给出具有优异横截面轮廓的精细图案化的抗蚀剂层。除了（a）通过光化射线照射产生酸的化合物外，组合物还包含（b）能够在酸存在下赋予碱性显影剂溶液中增加的溶解性的树脂成分，和（c）有机作为化学增感型光致抗蚀剂组合物的基本成分的酮，醚或酯的溶剂，（d）N，N-二甲基甲酰胺如N，N-二甲基甲酰胺和N，N-二甲基乙酰胺相对于组分（b）的指定比例。

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