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51. 发明授权

US07501675B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07501675B2
公开(公告)日：2009-03-10
申请号：US11107890
申请日：2005-04-18
申请人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
发明人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
IPC分类号： H01L27/108
CPC分类号： H01L27/11502 , H01L23/5223 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
摘要翻译：根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。形成保护膜，覆盖铁电电容器。辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。

52. 发明申请

US20080160642A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080160642A1
公开(公告)日：2008-07-03
申请号：US12046229
申请日：2008-03-11
申请人： Hiroshi Itokawa , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
发明人： Hiroshi Itokawa , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
IPC分类号： H01L21/8234
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/91
摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.
摘要翻译：根据本发明的一个方面的半导体器件包括半导体衬底，连接到形成在半导体衬底上的晶体管的有源区的导电插塞，覆盖半导体衬底的底表面部分和侧表面部分的金属硅化物膜导电插头和形成在导电插头上的电极结构。

53. 发明申请

US20070231948A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070231948A1
公开(公告)日：2007-10-04
申请号：US11754022
申请日：2007-05-25
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成电容器，所述电容器包括含有Pb，Zr，Ti和O的电介质膜。形成所述电容器包括形成含有Pb，Sr，Zr，Ti，汝和O.

54. 发明申请

US20060244022A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20060244022A1
公开(公告)日：2006-11-02
申请号：US11170316
申请日：2005-06-30
申请人： Katsuaki Natori , Hiroyuki Kanaya , Koji Yamakawa
发明人： Katsuaki Natori , Hiroyuki Kanaya , Koji Yamakawa
IPC分类号： H01L29/00 , H01L27/108 , H01L21/473
CPC分类号： H01L27/11507 , G11C11/22 , H01L21/02164 , H01L21/02178 , H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/0228 , H01L21/02356 , H01L21/3141 , H01L21/31616 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/65
摘要： According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.

55. 发明申请

US20060214210A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060214210A1
公开(公告)日：2006-09-28
申请号：US11097288
申请日：2005-04-04
申请人： Hiroshi Itokawa , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
发明人： Hiroshi Itokawa , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
IPC分类号： H01L29/94
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/91
摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.
摘要翻译：根据本发明的一个方面的半导体器件包括半导体衬底，连接到形成在半导体衬底上的晶体管的有源区的导电插塞，覆盖半导体衬底的底表面部分和侧表面部分的金属硅化物膜导电插头和形成在导电插头上的电极结构。

56. 发明授权

US07049650B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07049650B1
公开(公告)日：2006-05-23
申请号：US11024422
申请日：2004-12-30
申请人： Hiroshi Itokawa , Koji Yamakawa
发明人： Hiroshi Itokawa , Koji Yamakawa
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A semiconductor device comprises a capacitor including a bottom electrode, a top electrode, and a dielectric film, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a conductive metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film, the dielectric film including an insulating metal oxide film having a perovskite structure, the insulating metal oxide film being expressed by A(ZrxTi1-x)O3 (A is at least one A site element, 0
摘要翻译：一种半导体器件包括：包括底电极，顶电极和电介质膜的电容器，所述底电极包括含有铱的第一导电膜，设置在所述电介质膜和所述第一导电膜之间并由贵金属形成的第二导电膜金属膜，设置在介电膜和第二导电膜之间并由具有钙钛矿结构的导电金属氧化物膜形成的第三导电膜，以及设置在第一导电膜和第二导电膜之间的扩散防止膜，并且至少包括金属膜和金属氧化物膜之一，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散，所述电介质膜包括具有钙钛矿结构的绝缘金属氧化物膜，所述绝缘金属氧化物膜由A（（A是至少一个A位点元素，0

57. 发明申请

US20060102941A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20060102941A1
公开(公告)日：2006-05-18
申请号：US10986060
申请日：2004-11-12
申请人： Hiroshi Itokawa , Koji Yamakawa , Tohru Ozaki , Yoshinori Kumura , Takamichi Tsuchiya , Nicolas Nagel , Bum-Ki Moon , Andreas Hilliger
发明人： Hiroshi Itokawa , Koji Yamakawa , Tohru Ozaki , Yoshinori Kumura , Takamichi Tsuchiya , Nicolas Nagel , Bum-Ki Moon , Andreas Hilliger
IPC分类号： H01L29/94
CPC分类号： H01L28/55 , G11C11/22 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜，以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。

58. 发明申请

US20050212028A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050212028A1
公开(公告)日：2005-09-29
申请号：US10911501
申请日：2004-08-05
申请人： Soichi Yamazaki , Katsuaki Natori , Koji Yamakawa
发明人： Soichi Yamazaki , Katsuaki Natori , Koji Yamakawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/02 , H01L27/105 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11507 , H01L27/0207 , H01L27/10852 , H01L27/11502 , H01L28/55 , H01L28/60
摘要： There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a dielectric film formed on the bottom electrode, and a top electrode formed on the dielectric film and having a plurality of hole patterns.
摘要翻译：公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括底部电极，形成在底部电极上的电介质膜和形成在电介质膜上并具有多个孔的顶部电极模式。

59. 发明授权

US06924519B2 Semiconductor device with perovskite capacitor 失效
标题翻译：具有钙钛矿电容器的半导体器件
公开(公告)号：US06924519B2
公开(公告)日：2005-08-02
申请号：US10427962
申请日：2003-05-02
申请人： Hiroshi Itokawa , Koji Yamakawa , Keitaro Imai , Katsuaki Natori , Bum-ki Moon
发明人： Hiroshi Itokawa , Koji Yamakawa , Keitaro Imai , Katsuaki Natori , Bum-ki Moon
IPC分类号： H01L21/02 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L28/65 , H01L28/55 , H01L28/75
摘要： There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and comprising a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, at least one of the bottom electrode and the top electrode comprising a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, represented by ABO3, and containing a first metal element as a B site element, and a metal film provided between the conductive film and the metal oxide film, and containing a second metal element which is a B site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy at a time when the second metal element forms an oxide being larger than that at a time when the first metal element forms an oxide.
摘要翻译：公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，包括设置在底部电极和顶部电极之间的底部电极，顶部电极和电介质膜，至少一个底部电极并且包括由贵金属膜和贵金属氧化物膜选择的导电膜的顶部电极，设置在电介质膜和导电膜之间的具有钙钛矿结构的金属氧化物膜，由ABO 3 并且含有作为B位元素的第一金属元素和设置在导电膜和金属氧化物膜之间的金属膜，并且含有作为具有钙钛矿结构的金属氧化物的B位元素的第二金属元素，当第二金属元素形成比第一金属元素形成氧化物时的氧化物大的氧化物时，吉布斯自由能的降低。

60. 发明授权

US06516509B1 Method of manufacturing a liquid jet head having a plurality of movable members 失效
标题翻译：制造具有多个可移动部件的液体喷射头的方法
公开(公告)号：US06516509B1
公开(公告)日：2003-02-11
申请号：US08870356
申请日：1997-06-06
申请人： Takayuki Ono , Koji Yamakawa , Tsuyoshi Orikasa , Toshio Kashino , Hiroyuki Kigami , Kimiyuki Hayasaki , Hisashi Fukai , Kiyomitsu Kudo , Yoshie Asakawa , Masayoshi Ohkawa
发明人： Takayuki Ono , Koji Yamakawa , Tsuyoshi Orikasa , Toshio Kashino , Hiroyuki Kigami , Kimiyuki Hayasaki , Hisashi Fukai , Kiyomitsu Kudo , Yoshie Asakawa , Masayoshi Ohkawa
IPC分类号： H05B310
CPC分类号： B41J2/14048 , B41J2/1604 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/1637 , B41J2/164 , Y10T29/49083 , Y10T29/49401 , Y10T29/53974
摘要： A method for manufacturing a component provided with a number of liquid paths having movable members for use of liquid discharging comprises the steps of displacing the movable members provided for thin film material by use of such thin film material having the movable members on it, and a component provided with a plurality of recessed portions, and of placing the movable members, which are in the state of being displaced with respect to the recessed portions of the component correspondingly, hence making it possible to fabricate a liquid jet head without damaging or deforming such thin film material constituting the movable members. With the provision of the movable members, the discharging power and efficiency of the liquid jet head are significantly enhanced to obtain recorded images of high quality at higher speeds.
摘要翻译：一种具有多个液体通道的部件的制造方法，该液体通道具有用于排液的可移动部件，包括以下步骤：通过使用其上具有可移动部件的薄膜材料来移动为薄膜材料提供的可移动部件，以及配置有多个凹部，并且将相对于部件的凹部相对移位的状态的可动部件相对配置，从而可以制造液体喷射头而不会损坏或变形构成可动部件的薄膜材料。通过设置可动构件，显着地提高了喷液头的喷射功率和效率，从而以更高的速度获得高质量的记录图像。

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