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51. 发明申请

US20080169118A1 Wire structure and semiconductor device comprising the the wire structure 有权
标题翻译：线结构和包括线结构的半导体器件
公开(公告)号：US20080169118A1
公开(公告)日：2008-07-17
申请号：US12005364
申请日：2007-12-27
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L27/108 , H01B5/00
CPC分类号： H01L27/101 , Y10S977/732 , Y10S977/762 , Y10S977/765 , Y10S977/94
摘要： Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
摘要翻译：提供一种线结构和具有线结构的半导体器件。导线结构包括具有宽度为几至几十纳米的第一区域和宽度大于第一区域宽度的第二区域的第一布线。

52. 发明申请

US20060289921A1 Method of manufacturing a capacitor for semiconductor device 审中-公开
标题翻译：制造用于半导体器件的电容器的方法
公开(公告)号：US20060289921A1
公开(公告)日：2006-12-28
申请号：US11514248
申请日：2006-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L29/94
CPC分类号： H01L28/56 , H01L21/02186 , H01L21/02197 , H01L21/02205 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的可以保持薄介电层的特性。

53. 发明申请

US20060208294A1 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US20060208294A1
公开(公告)日：2006-09-21
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

54. 发明申请

US20050128916A1 Recording and/or reproducing apparatus and method with asignal quality determining device and method 有权
标题翻译：具有信号质量确定装置和方法的记录和/或再现装置和方法
公开(公告)号：US20050128916A1
公开(公告)日：2005-06-16
申请号：US10985014
申请日：2004-11-10
申请人： Hyun-soo Park , Jae-wook Lee , Jae-seong Shim , Jung-hyun Lee , Eing-seob Cho , Eun-jin Ryu
发明人： Hyun-soo Park , Jae-wook Lee , Jae-seong Shim , Jung-hyun Lee , Eing-seob Cho , Eun-jin Ryu
IPC分类号： G11B5/09 , G11B7/09 , G11B7/095 , G11B19/04 , G11B20/10 , H04B17/00
CPC分类号： G11B19/04 , G11B7/0901 , G11B7/0908 , G11B7/0941 , G11B7/0945 , G11B7/0956 , G11B20/10009 , G11B20/10046 , G11B20/10296
摘要： A recording and/or reproducing apparatus and method with signal quality determining device and a method thereof, with the signal quality determining device including a signal estimator determining a level corresponding to a sample value of the RF signal using binary data obtained from the RF signal and generating a selection signal corresponding to the determined level, a channel identifier classifying the sample value into a plurality of levels according to the selection signal and obtaining an average value of the sample values classified into each level, and a quality calculator outputting a signal quality value representing quality of the RF signal using each sample value output from the channel identifier and the average value of the sample values classified into each level. Accordingly, quality of an RF signal can be determined more exactly, and focus compensation, tilt compensation, detrack compensation, and recording signal optimization can be performed using the determined signal quality.
摘要翻译：一种具有信号质量确定装置的记录和/或再现装置和方法及其方法，其中信号质量确定装置包括使用从RF信号获得的二进制数据确定与RF信号的样本值相对应的电平的信号估计器，以及产生与所确定的电平相对应的选择信号，根据选择信号将采样值分类为多个电平的信道标识符，并获得分类为每个电平的采样值的平均值;以及质量计算器，输出信号质量值使用从信道标识符输出的每个样本值和分类到每个级别的样本值的平均值来表示RF信号的质量。因此，可以更准确地确定RF信号的质量，并且可以使用确定的信号质量来执行聚焦补偿，倾斜补偿，去差补偿和记录信号优化。

55. 发明申请

US20050087789A1 Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device 有权
标题翻译：具有相同的电容器，半导体器件以及半导体器件的制造方法
公开(公告)号：US20050087789A1
公开(公告)日：2005-04-28
申请号：US10902824
申请日：2004-08-02
申请人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
发明人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
IPC分类号： H01L27/108 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L21/44
CPC分类号： H01L28/75 , H01L21/28556 , H01L27/10852 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/90 , H01L28/91
摘要： A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
摘要翻译：提供具有由铝掺杂金属形成的下电极的堆叠型电容器的半导体器件及其制造方法。半导体器件包括：具有栅极结构和有源区的半导体衬底; 形成在有源区上的层间绝缘膜; 在层间电介质膜上由含有铝的金属形成的下电极; 形成在下电极上的电介质层; 形成在电介质层上的上电极; 以及形成在所述层间电介质膜中以将所述有源区电连接到所述下电极的插塞。该方法包括：在半导体衬底上形成栅极结构和有源区; 在所得半导体衬底上形成层间绝缘膜; 在所述层间电介质膜中形成插塞以与所述有源区电连接; 在插塞和层间电介质膜上形成模具氧化层; 以预定图案图案化模具氧化层，并在插头上形成含有铝的材料的下电极; 并且在下电极上依次形成电介质层和上电极。

56. 发明授权

US06506504B1 Light-emitting compound and display device adopting light-emitting compound as color-developing substance 有权
标题翻译：发光性化合物和采用发光性化合物作为显色性物质的显示装置
公开(公告)号：US06506504B1
公开(公告)日：2003-01-14
申请号：US09351163
申请日：1999-07-12
申请人： Soon-ki Kwon , Yun-hi Kim , Dong-cheol Shin , Jun-hwan Ahn , Han-sung Yu , Jung-hyun Lee
发明人： Soon-ki Kwon , Yun-hi Kim , Dong-cheol Shin , Jun-hwan Ahn , Han-sung Yu , Jung-hyun Lee
IPC分类号： H05B3314
CPC分类号： H01L51/0043 , C09K11/06 , H01L51/0035 , H01L51/004 , H01L51/0052 , H01L51/0094 , H01L51/5012 , Y10S428/917 , Y10T428/31663
摘要： A light-emitting compound and a display device adopting the light-emitting compounds as a color-developing substance. When the display device adopts an organic layer formed of the light-emitting compound, such as a light-emitting layer or an electron transport layer, as a blue light-emitting material, it can display blue and has good luminous efficiency and driving voltage characteristics.
摘要翻译：发光性化合物和采用发光性化合物作为显色性物质的显示装置。当显示装置采用由诸如发光层或电子传输层的发光化合物形成的有机层作为蓝色发光材料时，其可以显示蓝色并且具有良好的发光效率和驱动电压特性。

57. 发明授权

US08680638B2 Stack-type image sensor 有权
标题翻译：堆叠型图像传感器
公开(公告)号：US08680638B2
公开(公告)日：2014-03-25
申请号：US12923273
申请日：2010-09-13
申请人： Jung-hyun Lee
发明人： Jung-hyun Lee
IPC分类号： H01L31/0232
CPC分类号： H01L27/14647 , H01L27/14621
摘要： Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 μm in order to generate a high resolution color image. As such, resolution saturation may be avoided.
摘要翻译：示例性实施例涉及包括电阻变化元件的堆叠型图像传感器。堆叠型图像传感器包括至少两个检测层叠在不同层上的不同颜色光的感光层。为了生成高分辨率彩色图像，堆叠型图像传感器可能不需要检测光颜色小于1μm的单位像素的尺寸。因此，可以避免分辨率饱和。

58. 发明授权

US08385173B2 Method for determining characteristics of signal and apparatus using the same 有权
标题翻译：用于确定信号和使用其的装置的特性的方法
公开(公告)号：US08385173B2
公开(公告)日：2013-02-26
申请号：US12823943
申请日：2010-06-25
申请人： Hyun-soo Park , Jae-wook Lee , Jae-seong Shim , Jung-hyun Lee , Eing-seob Cho , Eun-jin Ryu
发明人： Hyun-soo Park , Jae-wook Lee , Jae-seong Shim , Jung-hyun Lee , Eing-seob Cho , Eun-jin Ryu
IPC分类号： G11B7/00
CPC分类号： G11B20/10009 , G11B2020/10555
摘要： A method of determining characteristics of a signal and an apparatus using the method. The apparatus for determining characteristics of a signal includes: a level detector receiving sample values of a radio frequency (RF) signal and binary data obtained by binarizing the RF signal, generating selection signals based on the binary data, classifying each of the sample values of the RF signal into one of a plurality of levels using the selection signals, and outputting average values of sample values of each level; and a signal characteristics determiner determining a characteristics value that indicates the characteristics of the RF signal using the average values of the sample values belonging to each level.
摘要翻译：一种确定信号特性的方法和使用该方法的装置。用于确定信号特性的装置包括：电平检测器，其接收射频（RF）信号的采样值和通过二值化RF信号获得的二进制数据，基于二进制数据产生选择信号，将每个样本值使用所述选择信号将所述RF信号变换成多个电平之一，并输出各电平的采样值的平均值; 以及信号特性确定器，其使用属于每个级别的样本值的平均值来确定指示RF信号的特性的特性值。

59. 发明授权

US07897412B2 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US07897412B2
公开(公告)日：2011-03-01
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

60. 发明申请

US20100304043A1 Method of manufacturing silicon film by using silicon solution process 有权
标题翻译：使用硅溶液工艺制造硅膜的方法
公开(公告)号：US20100304043A1
公开(公告)日：2010-12-02
申请号：US12659329
申请日：2010-03-04
申请人： Jung-hyun Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Dong-joon Ma
IPC分类号： B05D3/06
CPC分类号： C23C18/122 , C23C18/1254 , C23C18/14 , H01L21/288 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.
摘要翻译：提供可以通过使用Si溶液法制造硅（Si）膜的方法。根据制造Si膜的方法，可以通过制备Si形成溶液来制造Si膜。可以将紫外线（UV）照射在所制备的Si形成溶液中。 Si形成溶液可以涂覆在基底上，并且Si形成溶液中的溶剂可以涂覆在基底上。可以将电子束照射在去除溶剂的Si形成溶液中。

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