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51. 发明申请

US20100055621A1 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US20100055621A1
公开(公告)日：2010-03-04
申请号：US12458884
申请日：2009-07-27
申请人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人： Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号： G03F7/20
CPC分类号： H01L21/0332 , H01L21/0275 , H01L21/0337
摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译：公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。

52. 发明申请

US20070185226A1 NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：新型可聚合化合物，聚合物，阳离子组合物和使用该方法的方法
公开(公告)号：US20070185226A1
公开(公告)日：2007-08-09
申请号：US11672917
申请日：2007-02-08
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
IPC分类号： C08G59/14
CPC分类号： G03F7/0046 , C07C69/54 , C07C2602/42 , C08F220/18 , C08F220/28 , G03F7/0397
摘要： The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
摘要翻译：本发明提供一种聚合物，其具有以下通式（1a）表示的重复单元，下述通式（2a）表示的重复单元和下述通式（ 3b）和由以下通式（1c）表示的重复单元和含有聚合物作为基础树脂的正性抗蚀剂组合物。因此，可以提供一种在高能量束曝光时具有高灵敏度和高分辨率的正光刻胶组合物，其中线边缘粗糙度小，因为在显影时的膨胀被抑制，并且显影后的残留物很少。

53. 发明授权

US07232641B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same 有权
标题翻译：可聚合化合物，聚合物，正性抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US07232641B2
公开(公告)日：2007-06-19
申请号：US10953334
申请日：2004-09-30
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
IPC分类号： G03F7/039 , G03F7/38
CPC分类号： G03F7/0046 , C07C69/54 , C07C2602/42 , C08F220/18 , C08F220/28 , G03F7/0397
摘要： The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few
摘要翻译：本发明提供一种聚合物，其具有以下通式（1a）表示的重复单元，下述通式（2a）表示的重复单元和下述通式（ 3b）和由以下通式（1c）表示的重复单元和含有聚合物作为基础树脂的正性抗蚀剂组合物。由此，可以提供一种在高能量照射下具有高灵敏度和高分辨率的正光刻胶组合物，其中线边缘粗糙度小，因为显影时的膨胀被抑制，显影后的残留物很少

54. 发明授权

US06623909B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06623909B2
公开(公告)日：2003-09-23
申请号：US09870745
申请日：2001-06-01
申请人： Jun Hatakeyama , Toshiaki Takahashi , Toshinobu Ishihara , Jun Watanabe , Tohru Kubota , Yoshio Kawai
发明人： Jun Hatakeyama , Toshiaki Takahashi , Toshinobu Ishihara , Jun Watanabe , Tohru Kubota , Yoshio Kawai
IPC分类号： G03F7038
CPC分类号： C08G77/24 , G03F7/0045 , G03F7/0757 , Y10S430/106 , Y10S430/108
摘要： Polymers comprising recurring units of formula (1) are provided wherein R1 is a straight, branched or cyclic divalent C1-20 hydrocarbon group or a bridged cyclic hydrocarbon group, R is hydrogen atom or an acid labile group, 0≦m≦3, 0≦n≦3 and 0≦m+n≦6. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中R 1是直链，支链或环状二价C 1-20烃基或桥连环烃基，R是氢原子或酸不稳定基团，0≤m <= 3,0 <= n <= 3，0 <= m + n <= 6。使用聚合物，获得具有F2受激准分子激光的低吸收性的化学放大阳性抗蚀剂组合物。

55. 发明授权

US07332616B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same 有权
标题翻译：可聚合化合物，聚合物，正性抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US07332616B2
公开(公告)日：2008-02-19
申请号：US11672917
申请日：2007-02-08
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
IPC分类号： C07D333/64 , C07D333/72 , C07D409/02 , C07D307/00 , C07C69/52 , C07C67/02 , C07C43/18
CPC分类号： G03F7/0046 , C07C69/54 , C07C2602/42 , C08F220/18 , C08F220/28 , G03F7/0397
摘要： The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.
摘要翻译：本发明提供一种聚合物，其具有以下通式（1a）表示的重复单元，下述通式（2a）表示的重复单元和下述通式（ 3b）和由以下通式（1c）表示的重复单元和含有聚合物作为基础树脂的正性抗蚀剂组合物。因此，可以提供一种在高能量束曝光时具有高灵敏度和高分辨率的正光刻胶组合物，其中线边缘粗糙度小，因为在显影时的膨胀被抑制，并且显影后的残留物很少。

56. 发明授权

US06866983B2 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06866983B2
公开(公告)日：2005-03-15
申请号：US10406222
申请日：2003-04-04
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A resist composition comprising a blend of a polymer comprising recurring units k and m of formula (1) wherein R1 and R2 each are hydrogen or an acid labile group, 0
摘要翻译：一种抗蚀剂组合物，其包含包含式（1）的重复单元k和m的聚合物的共混物，其中R 1和R 2各自为氢或酸不稳定基团，0

57. 发明申请

US20100248493A1 PHOTOMASK BLANK, PROCESSING METHOD, AND ETCHING METHOD 有权
标题翻译：光电白板，处理方法和蚀刻方法
公开(公告)号：US20100248493A1
公开(公告)日：2010-09-30
申请号：US12732637
申请日：2010-03-26
申请人： Satoshi WATANABE , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
发明人： Satoshi WATANABE , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
IPC分类号： H01L21/308 , G03F1/00
CPC分类号： G03F1/58 , G03F1/14 , G03F1/26 , G03F1/54 , G03F1/80
摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
摘要翻译：提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。

58. 发明申请

US20050074202A1 Optical path switching device and add/drop optical switch 审中-公开
标题翻译：光路切换装置及分插光开关
公开(公告)号：US20050074202A1
公开(公告)日：2005-04-07
申请号：US10947321
申请日：2004-09-23
申请人： Takayuki Ojima , Kentaro Harase , Yoshio Kawai , Hideharu Kajizuka , Takurou Horinaka , Atsuo Ishi
发明人： Takayuki Ojima , Kentaro Harase , Yoshio Kawai , Hideharu Kajizuka , Takurou Horinaka , Atsuo Ishi
IPC分类号： G02B6/35 , H04J14/02 , H04Q11/00 , G02B6/26
CPC分类号： G02B6/352 , G02B6/3536 , G02B6/3544 , G02B6/356 , G02B6/3562 , H04J14/0201 , H04Q11/0005 , H04Q2011/0024 , H04Q2011/003 , H04Q2011/0058
摘要： An optical switch for switching an optical path includes a fixed reflection element disposed at each of crossing points of a plurality of lines and a plurality of redundant lines for switching the optical path to one of the redundant lines, and a movable optical unit disposed at each of the crossing points and including an optical path parallel move element. The optical path parallel move element has parallel surfaces for moving the optical path in parallel toward the fixed reflection element. The movable optical unit located on the optical path of one of collimators moves in and out the optical path incident from an auxiliary collimator to switch the optical path when the one of the collimators has a problem.
摘要翻译：用于切换光路的光学开关包括设置在多条线的交叉点的每个交叉点处的固定反射元件和用于将光路切换到冗余线之一的多条冗余线，以及设置在每条线上的可移动光学单元的交叉点，并包括光路平行移动元件。光路平行移动元件具有用于使光路平行朝向固定反射元件移动的平行表面。位于准直仪之一的光路上的可动光学单元从辅助准直仪入射的光路移入和移出，以便当准直仪中的一个有问题时切换光路。

59. 发明授权

US06667415B1 Tertiary butyl 4,4-bis(4′-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same 失效
标题翻译：叔丁基4,4-双（4'-羟基苯基）戊酸酯衍生物和含有它们的正性抗蚀剂材料
公开(公告)号：US06667415B1
公开(公告)日：2003-12-23
申请号：US08300245
申请日：1994-09-02
申请人： Fujio Yagihashi , Jun Watanabe , Minoru Takamizawa , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
发明人： Fujio Yagihashi , Jun Watanabe , Minoru Takamizawa , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
IPC分类号： C07C6976
CPC分类号： C07C69/734 , C07D309/12 , C07F7/1804 , G03F7/0045 , Y02P20/55
摘要： Disclosed are novel tert-butyl 4,4-bis(4′-hydroxyphenyl)pentanoate derivatives represented by the following general formula (I); wherein R1 represents a protective group which can be readily eliminated under an acidic condition, and R2 represents a hydrogen atom, a lower alkyl group or a lower alkoxy group: and high energy radiation-responsive positive resist materials using said novel derivatives as dissolution inhibitors.
摘要翻译：公开了由以下通式（I）表示的新颖的4,4-双（4'-羟基苯基）戊酸叔丁酯衍生物：其中R 1表示在酸性条件下易于除去的保护基，R 代表氢原子，低级烷基或低级烷氧基;以及使用所述新衍生物作为溶解抑制剂的高能辐射响应正抗蚀材料。

60. 发明授权

US5880169A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5880169A
公开(公告)日：1999-03-09
申请号：US742324
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： G03F7/0045
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团以及正，支链或环状的C 1 -C 20烷基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的烷基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

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