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51. 发明授权

US07513125B2 Method for controlling air conditioner 有权
标题翻译：空调控制方法
公开(公告)号：US07513125B2
公开(公告)日：2009-04-07
申请号：US11204167
申请日：2005-08-16
申请人： Do Yong Ha , Jin Ha Choi , Si Kyong Sung , Jae Sik Kang , Young Min Park
发明人： Do Yong Ha , Jin Ha Choi , Si Kyong Sung , Jae Sik Kang , Young Min Park
IPC分类号： F25D17/00 , F25B5/00
CPC分类号： F25B13/00 , F24F11/77 , F24F2140/20 , F25B2313/023
摘要： A method for controlling a multi-unit air conditioner is disclosed which is capable of preventing frost from being formed on the outer surface of a refrigerant line. In order to control an air conditioner including an outdoor unit, a plurality of indoor units corresponding to the out door unit, and a plurality of refrigerant lines for connecting the indoor units to the outdoor unit, respectively, the method includes the steps of measuring respective states of the refrigerant lines using a measurement sensor, determining respective states of the refrigerant lines, based on measurement data obtained by the measurement sensor, and controlling an operation state of an operating one or operating ones of the indoor units, in accordance with the determined state of the refrigerant line associated with the operating indoor unit or each operating indoor unit.
摘要翻译：公开了一种用于控制多单元空调的方法，其能够防止在制冷剂管线的外表面上形成结霜。为了控制包括室外单元的空调机，对应于门外单元的多个室内单元，以及分别将室内单元连接到室外单元的多个制冷剂管线，该方法包括以下步骤：使用测量传感器的制冷剂管线的状态，基于由测量传感器获得的测量数据确定制冷剂管线的各个状态，并且根据所确定的控制单元或操作室内单元的操作状态与操作的室内机或每个操作的室内机相关联的制冷剂管线的状态。

52. 发明申请

US20080099781A1 Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same 审中-公开
标题翻译：制造III族氮化物半导体薄膜的方法及使用该III族氮化物半导体薄膜的III族氮化物半导体器件的制造方法
公开(公告)号：US20080099781A1
公开(公告)日：2008-05-01
申请号：US11898955
申请日：2007-09-18
申请人： Rak Jun Choi , Kureshov Vladimir , Bang Won Oh , Gil Han Park , Hee Seok Park , Seong Eun Park , Young Min Park , Min Ho Kim
发明人： Rak Jun Choi , Kureshov Vladimir , Bang Won Oh , Gil Han Park , Hee Seok Park , Seong Eun Park , Young Min Park , Min Ho Kim
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.
摘要翻译：一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

53. 外观设计

USD567260S1 Refrigerator 有权
公开(公告)号：USD567260S1
公开(公告)日：2008-04-22
申请号：US29264866
申请日：2006-08-21
申请人： Jeong Min Kim , Young Min Park
设计人： Jeong Min Kim , Young Min Park

54. 发明申请

US20080078986A1 Nitride semiconductor light emitting device and manufacturing method of the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20080078986A1
公开(公告)日：2008-04-03
申请号：US11902396
申请日：2007-09-21
申请人： Seong Eun Park , Bang Won Oh , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
发明人： Seong Eun Park , Bang Won Oh , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/0079 , H01S5/3054 , H01S5/3072 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.
摘要翻译：提供了一种氮化物半导体发光器件及其制造方法。所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

55. 外观设计

USD534555S1 Refrigerator 有权
公开(公告)号：USD534555S1
公开(公告)日：2007-01-02
申请号：US29255737
申请日：2006-03-09
申请人： Jeong Min Kim , Hea Me Lee , Young Min Park
设计人： Jeong Min Kim , Hea Me Lee , Young Min Park

56. 外观设计

USD522541S1 Refrigerator 有权
公开(公告)号：USD522541S1
公开(公告)日：2006-06-06
申请号：US29239344
申请日：2005-09-29
申请人： Jeong Min Kim , Hea Mi Lee , Young Min Park
设计人： Jeong Min Kim , Hea Mi Lee , Young Min Park

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