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    • 53. 发明授权
    • Coating containing hydroxy containing acrylosilane polymer to improve
mar and acid etch resistance
    • 含羟基的涂料含有丙烯酸硅烷聚合物以改善耐酸蚀性
    • US5985463A
    • 1999-11-16
    • US103852
    • 1998-06-24
    • Jun LinJohn David Nordstrom
    • Jun LinJohn David Nordstrom
    • C08G18/62C09D125/14C09D133/06C09D143/04C09D175/04B32B9/04
    • C09D175/04C08G18/6295Y10T428/31663
    • A coating composition particularly useful as a clear coating used over a pigmented base coat that has improved resistance to marring and to acid etching when exposed to natural weathering conditions containing 40-70% by weight of film forming binder and 30-60% by weight of a volatile liquid carrier for the binder; wherein the binder containsa. 50-90% by weight, based on the weight of the binder, of an acrylosilane polymer of polymerized monomers from the following group: an alkyl methacrylate, an alkyl acrylate, each having 1-12 carbon atoms in the alkyl group, cycloaliphatic alkyl methacrylate, cycloaliphatic alkyl acrylate, styrene or any mixture of these monomers; hydroxy containing monomers from the following group: hydroxy alkyl methacrylate, hydroxy alkyl acrylate each having 1-4 carbon atoms in the alkyl group, or any mixtures of these monomers; and a mono-ethylenically unsaturated silane monomer;and the polymer having a weight average molecular weight of 1,000-15,000 determined by gel permeation chromatography.b. 10-50% by weight, based on the weight of the binder of an organic polyisocyanate; andwherein the ratio of isocyanate groups of the organic polyisocyanate to hydroxy groups of the of the acrylosilane polymer is about 0.4:1 to 1.3:1.
    • 特别适用于在着色底涂层上使用的透明涂层的涂料组合物,其在暴露于包含40-70重量%成膜粘合剂和30-60重量%成膜粘合剂的天然风化条件下具有改善的防污性和酸蚀刻时, 用于粘合剂的挥发性液体载体; 其中所述粘合剂含有。 50-90重量%,基于粘合剂的重量,来自下列基团的聚合单体的丙烯基硅烷聚合物:烷基中具有1-12个碳原子的甲基丙烯酸烷基酯,丙烯酸烷基酯,甲基丙烯酸脂环族烷基酯 ,脂环族丙烯酸烷基酯,苯乙烯或这些单体的任何混合物; 来自下列基团的含羟基的单体:甲基丙烯酸羟烷基酯,烷基中具有1-4个碳原子的羟基烷基丙烯酸酯,或这些单体的任何混合物; 和单烯属不饱和硅烷单体; 并且通过凝胶渗透色谱测定的重均分子量为1,000-15,000的聚合物。 b。 10-50重量%,基于有机多异氰酸酯的粘合剂的重量; 并且其中有机多异氰酸酯的异氰酸酯基与丙烯酸硅烷聚合物的羟基的比例为约0.4:1至1.3:1。
    • 57. 发明申请
    • Fabrication Process of a Semiconductor Device Having a Capacitor
    • 具有电容器的半导体器件的制造工艺
    • US20090098696A1
    • 2009-04-16
    • US12127067
    • 2008-05-27
    • Jun LinHiroyuki OgawaHideyuki Kojima
    • Jun LinHiroyuki OgawaHideyuki Kojima
    • H01L21/8234
    • H01L27/0629H01L27/0802H01L27/0805H01L28/40
    • A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.
    • 一种制造半导体器件的方法包括在半导体衬底的电容器器件区域中形成第一沟槽,在第一沟槽的侧壁表面上形成电容器绝缘膜,形成覆盖第一沟槽的半导体膜,电阻器器件区域 的半导体衬底和半导体衬底的逻辑器件区域,在第一沟槽上形成的半导体膜中引入第一杂质元素,对半导体膜进行构图以在电容器器件区域中形成顶电极,电阻器件中的电阻器 区域和逻辑器件区域中的栅电极,退火半导体衬底,并在电阻器中引入第二杂质元素。