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51. 发明申请

US20080296771A1 METHODS OF FABRICATING SILICON CARBIDE POWER DEVICES BY AT LEAST PARTIALLY REMOVING AN N-TYPE SILICON CARBIDE SUBSTRATE, AND SILICON CARBIDE POWER DEVICES SO FABRICATED 有权
标题翻译：通过部分去除N型碳化硅基体和硅碳素电极器件制造的碳化硅电力器件的制造方法
公开(公告)号：US20080296771A1
公开(公告)日：2008-12-04
申请号：US11756020
申请日：2007-05-31
申请人： Mrinal Kanti Das , Qingchun Zhang , John M. Clayton, JR. , Matthew Donofrio
发明人： Mrinal Kanti Das , Qingchun Zhang , John M. Clayton, JR. , Matthew Donofrio
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L29/66068 , H01L21/0475 , H01L21/0485 , H01L21/268 , H01L23/4827 , H01L29/1095 , H01L29/7395 , H01L2224/04026 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10271 , H01L2924/10272 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
摘要翻译：通过在n型碳化硅衬底上形成p型碳化硅外延层并在p型碳化硅外延层上形成碳化硅功率器件结构来制造碳化硅功率器件。至少部分去除n型碳化硅衬底，以露出p型碳化硅外延层。在露出的至少一些p型碳化硅外延层上形成欧姆接触。通过至少部分去除n型碳化硅衬底并在p型碳化硅外延层上形成欧姆接触，可以减少或消除使用p型衬底的缺点。还描述了相关结构。

52. 发明授权

US07419912B2 Laser patterning of light emitting devices 有权
标题翻译：发光器件的激光图案化
公开(公告)号：US07419912B2
公开(公告)日：2008-09-02
申请号：US10815293
申请日：2004-04-01
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L21/311 , B29D11/00 , G03F1/00
CPC分类号： H01L33/20 , B23K26/066 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , H01L33/0095 , H01L33/32 , Y10S438/94
摘要： Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the layer of semiconductor material. The layer of semiconductor material may be the substrate. In particular embodiments of the present invention, the surface of the layer of semiconductor material is shaped by applying laser light to the layer of semiconductor material at an energy sufficient to remove material from the layer of semiconductor material. The laser light may also by applied in a blanket manner at a level below the ablation threshold. The application of laser light to the layer of semiconductor material may be followed by etching the substrate. The layer of semiconductor material may be anisotropically etched. A mask could also be patterned utilizing laser light and the layer of semiconductor material etched using the mask. Light emitting devices have three dimensional patterns in a layer of semiconductor material of the device are also provided.
摘要翻译：通过使用激光对半导体材料层的表面进行成形以在半导体材料层中形成三维图案，为具有衬底和半导体发光元件的发光器件提供光提取特征。半导体材料层可以是衬底。在本发明的特定实施例中，半导体材料层的表面通过以足以从半导体材料层去除材料的能量将激光施加到半导体材料层而成形。也可以以低于消融阈值的水平以橡皮布方式施加激光。将激光应用于半导体材料层之后可以蚀刻基板。可以各向异性地蚀刻半导体材料层。也可以使用激光对掩模进行图案化，并使用掩模蚀刻半导体材料层。还提供了发光器件在器件的半导体材料层中具有三维图案。

53. 发明授权

US07384809B2 Method of forming three-dimensional features on light emitting diodes for improved light extraction 有权
标题翻译：在发光二极管上形成三维特征以改进光提取的方法
公开(公告)号：US07384809B2
公开(公告)日：2008-06-10
申请号：US11461018
申请日：2006-07-31
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , B23K26/066 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , H01L33/0095 , H01L33/32 , Y10S438/94
摘要： A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
摘要翻译：公开了一种用于在发光二极管的表面上获得高分辨率透镜图案的方法。该方法包括将可蚀刻材料的图案化牺牲层压印在半导体表面上，该半导体表面又邻近发光有源区，然后蚀刻印刻的牺牲层和下面的半导体以将压印图案转移到邻近的半导体层发光有源区。

54. 发明申请

US20050227379A1 Laser patterning of light emitting devices and patterned light emitting devices 有权
标题翻译：发光器件和图案化发光器件的激光图案化
公开(公告)号：US20050227379A1
公开(公告)日：2005-10-13
申请号：US10815293
申请日：2004-04-01
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： B23K26/00 , B23K26/06 , B23K26/40 , H01L21/027 , H01L21/04 , H01L33/00 , H01L33/20 , H01L33/32 , H01L21/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/20 , B23K26/066 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , H01L33/0095 , H01L33/32 , Y10S438/94
摘要： Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the layer of semiconductor material. The layer of semiconductor material may be the substrate. In particular embodiments of the present invention, the surface of the layer of semiconductor material is shaped by applying laser light to the layer of semiconductor material at an energy sufficient to remove material from the layer of semiconductor material. The laser light may also by applied in a blanket manner at a level below the ablation threshold. The application of laser light to the layer of semiconductor material may be followed by etching the substrate. The layer of semiconductor material may be anisotropically etched. A mask could also be patterned utilizing laser light and the layer of semiconductor material etched using the mask. Light emitting devices have three dimensional patterns in a layer of semiconductor material of the device are also provided.
摘要翻译：通过使用激光对半导体材料层的表面进行成形以在半导体材料层中形成三维图案，为具有衬底和半导体发光元件的发光器件提供光提取特征。半导体材料层可以是衬底。在本发明的特定实施例中，半导体材料层的表面通过以足以从半导体材料层去除材料的能量将激光施加到半导体材料层而成形。也可以以低于消融阈值的水平以橡皮布方式施加激光。将激光应用于半导体材料层之后可以蚀刻基板。可以各向异性地蚀刻半导体材料层。也可以使用激光对掩模进行图案化，并使用掩模蚀刻半导体材料层。还提供了发光器件在器件的半导体材料层中具有三维图案。

55. 发明申请

US20050151138A1 Methods of processing semiconductor wafer backsides having light emitting devices (LEDS) thereon and leds so formed 有权
标题翻译：处理其上具有发光器件（LEDS）的半导体晶片背面和如此形成的LED的方法
公开(公告)号：US20050151138A1
公开(公告)日：2005-07-14
申请号：US10987135
申请日：2004-11-12
申请人： David Slater , Matthew Donofrio
发明人： David Slater , Matthew Donofrio
IPC分类号： H01L21/78 , H01L33/00 , H01L33/20 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/20
摘要： Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the carrier. The first thickness of the wafer is reduced to a second thickness that is less than the first thickness by processing the backside of the wafer. The carrier is separated from the plurality of LEDs on the wafer and the wafer is cut to separate the plurality of LEDs from one another. Related devices are also disclosed.
摘要翻译：处理半导体晶片可以包括在具有第一厚度的半导体晶片上形成多个发光器件（LED）。使晶片上的多个LED与载体的表面接触以将晶片耦合到载体。通过处理晶片的背面，将晶片的第一厚度减小到小于第一厚度的第二厚度。载体与晶片上的多个LED分离，并且切割晶片以将多个LED彼此分离。还公开了相关设备。

56. 发明授权

US09437783B2 Light emitting diode (LED) contact structures and process for fabricating the same 有权
标题翻译：发光二极管（LED）接触结构及其制造方法
公开(公告)号：US09437783B2
公开(公告)日：2016-09-06
申请号：US13466590
申请日：2012-05-08
申请人： Pritish Kar , David Beardsley Slater, Jr. , Matthew Donofrio , Brad Williams
发明人： Pritish Kar , David Beardsley Slater, Jr. , Matthew Donofrio , Brad Williams
IPC分类号： H01L21/00 , H01L33/40 , H01L33/22 , H01L33/32 , H01L33/38
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
摘要翻译：发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。接触结构包括至少一个电镀接触层。接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。还讨论了相关的制造方法。

57. 发明授权

US08957430B2 Gel underfill layers for light emitting diodes 有权
标题翻译：用于发光二极管的凝胶底层填充层
公开(公告)号：US08957430B2
公开(公告)日：2015-02-17
申请号：US13369996
申请日：2012-02-09
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L29/18 , H01L25/075 , H01L33/54 , H01L33/20 , H01L33/50
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/54 , H01L2224/48091 , H01L2924/10155 , H01L2924/00014
摘要： A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described.
摘要翻译：通过提供安装基板和与安装基板相邻的发光二极管管芯阵列来限定间隙来制造发光器件。将在溶剂中稀释的凝胶施加在基板上和发光管芯阵列上。蒸发至少一些溶剂，使得凝胶留在间隙中，但不完全覆盖发光二极管管芯。例如，凝胶基本上从衬底超过发光二极管管芯的阵列后退，并且基本上从发光二极管管芯的外表面后退。还描述了相关的发光器件结构。

58. 发明授权

US08866150B2 Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts 有权
标题翻译：碳化硅功率器件包括P型外延层和直接欧姆接触
公开(公告)号：US08866150B2
公开(公告)日：2014-10-21
申请号：US11756020
申请日：2007-05-31
申请人： Mrinal Kanti Das , Qingchun Zhang , John M. Clayton, Jr. , Matthew Donofrio
发明人： Mrinal Kanti Das , Qingchun Zhang , John M. Clayton, Jr. , Matthew Donofrio
IPC分类号： H01L29/15 , H01L23/482 , H01L29/739 , H01L29/66 , H01L29/10 , H01L21/04 , H01L21/268
CPC分类号： H01L29/66068 , H01L21/0475 , H01L21/0485 , H01L21/268 , H01L23/4827 , H01L29/1095 , H01L29/7395 , H01L2224/04026 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10271 , H01L2924/10272 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
摘要翻译：通过在n型碳化硅衬底上形成p型碳化硅外延层并在p型碳化硅外延层上形成碳化硅功率器件结构来制造碳化硅功率器件。至少部分去除n型碳化硅衬底，以露出p型碳化硅外延层。在露出的至少一些p型碳化硅外延层上形成欧姆接触。通过至少部分去除n型碳化硅衬底并在p型碳化硅外延层上形成欧姆接触，可以减少或消除使用p型衬底的缺点。还描述了相关结构。

59. 外观设计

USD689830S1 Light emitting diode 有权
公开(公告)号：USD689830S1
公开(公告)日：2013-09-17
申请号：US29383908
申请日：2011-01-24
申请人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider
设计人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider

60. 外观设计

USD682225S1 Light emitting diode 有权
公开(公告)号：USD682225S1
公开(公告)日：2013-05-14
申请号：US29383910
申请日：2011-01-24
申请人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schnelder
设计人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schnelder

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