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51. 发明申请

US20050095838A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050095838A1
公开(公告)日：2005-05-05
申请号：US10880035
申请日：2004-06-29
申请人： Cheol Jeong , Tae Kim
发明人： Cheol Jeong , Tae Kim
IPC分类号： H01L27/115 , H01L21/28 , H01L21/3205 , H01L21/44 , H01L21/4763 , H01L21/768 , H01L21/8239 , H01L27/105
CPC分类号： H01L27/105 , H01L21/76838 , H01L27/1052
摘要： The present invention discloses a method for manufacturing a semiconductor device, comprising the steps of: providing a semiconductor substrate on which cell strings are formed and in which a plurality of conductive regions are formed; sequentially forming a first interlayer insulation film and a first etch barrier film on the semiconductor substrate; forming a plurality of contact holes by exposing the plurality of conductive regions formed in the semiconductor substrate, wherein an impurity concentration of the conductive regions is reduced due to the process for forming the contact holes; filling a metal material in the contact holes and forming a plurality of contact plugs; sequentially forming a second interlayer insulation film, a second etch barrier film and a third interlayer insulation film over a resulting structure including the contact plugs; forming a plurality of metal line patterns, wherein the metal line patterns pass through the third interlayer insulation film, the second etch barrier film and the second interlayer insulation film and contact to the contact plugs; forming a fourth interlayer insulation film over a resulting structure including the plurality of metal line patterns; forming a plurality of metal line contact holes by patterning the fourth interlayer insulation film; and forming a plurality of metal line contact plugs in the plurality of metal line contact holes by filling a metal material in the metal line contact holes.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括以下步骤：提供其上形成有多个导电区域的半导体衬底，其上形成有多个导电区域; 在半导体衬底上依次形成第一层间绝缘膜和第一蚀刻阻挡膜; 通过暴露形成在半导体衬底中的多个导电区域来形成多个接触孔，其中由于形成接触孔的工艺导致导电区域的杂质浓度降低; 在接触孔中填充金属材料并形成多个接触插塞; 在包括接触塞的所得结构上依次形成第二层间绝缘膜，第二蚀刻阻挡膜和第三层间绝缘膜; 形成多个金属线图案，其中所述金属线图案通过所述第三层间绝缘膜，所述第二蚀刻阻挡膜和所述第二层间绝缘膜并与所述接触插塞接触; 在包括所述多个金属线图案的所得结构上形成第四层间绝缘膜; 通过图案化第四层间绝缘膜形成多个金属线接触孔; 以及通过在金属线接触孔中填充金属材料在所述多个金属线接触孔中形成多个金属线接触塞。

52. 发明授权

US08737157B2 Memory device word line drivers and methods 有权
标题翻译：内存设备字线驱动程序和方法
公开(公告)号：US08737157B2
公开(公告)日：2014-05-27
申请号：US13298104
申请日：2011-11-16
申请人： Tae Kim , Howard C. Kirsch , Charles L. Ingalls , Shigeki Tomishima , K. Shawn Smith
发明人： Tae Kim , Howard C. Kirsch , Charles L. Ingalls , Shigeki Tomishima , K. Shawn Smith
IPC分类号： G11C8/00 , G11C16/06
CPC分类号： G11C8/08 , G11C5/025 , G11C8/14 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898
摘要： Memory subsystems and methods, such as those involving a memory cell array formed over a semiconductor material of a first type, such as p-type substrate. In at least one such subsystem, all of the transistors used to selectively access cells within the array are transistors of a second type, such as n-type transistors. Local word line drivers are coupled to respective word lines extending through the array. Each local word line drivers includes at least one transistor. However, all of the transistors in the local word line drivers are of the second type. A well of semiconductor material of the second type, is also formed in the material of the first type, and a plurality of global word line drivers are formed using the well. Other subsystems and methods are disclosed.
摘要翻译：存储器子系统和方法，例如涉及形成在第一类型的半导体材料上的存储单元阵列的那些，例如p型衬底。在至少一个这样的子系统中，用于选择性地访问阵列内的单元的所有晶体管都是第二类型的晶体管，例如n型晶体管。本地字线驱动器耦合到延伸穿过阵列的相应字线。每个本地字线驱动器包括至少一个晶体管。然而，本地字线驱动器中的所有晶体管都是第二类。第二种类型的半导体材料的阱也形成在第一类型的材料中，并且使用该阱形成多个全局字线驱动器。公开了其他子系统和方法。

53. 发明申请

US20120063256A1 MEMORY DEVICE WORD LINE DRIVERS AND METHODS 有权
标题翻译：存储器设备字线驱动器和方法
公开(公告)号：US20120063256A1
公开(公告)日：2012-03-15
申请号：US13298104
申请日：2011-11-16
申请人： Tae Kim , Howard C. Kirsch , Charles L. Ingalls , Shigeki Tomishima , K. Shawn Smith
发明人： Tae Kim , Howard C. Kirsch , Charles L. Ingalls , Shigeki Tomishima , K. Shawn Smith
IPC分类号： G11C8/08 , H01L21/8239
CPC分类号： G11C8/08 , G11C5/025 , G11C8/14 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898
摘要： Memory subsystems and methods, such as those involving a memory cell array formed over a semiconductor material of a first type, such as p-type substrate. In at least one such subsystem, all of the transistors used to selectively access cells within the array are transistors of a second type, such as n-type transistors. Local word line drivers are coupled to respective word lines extending through the array. Each local word line drivers includes at least one transistor. However, all of the transistors in the local word line drivers are of the second type. A well of semiconductor material of the second type, is also formed in the material of the first type, and a plurality of global word line drivers are formed using the well. Other subsystems and methods are disclosed.
摘要翻译：存储器子系统和方法，例如涉及形成在第一类型的半导体材料上的存储单元阵列的那些，例如p型衬底。在至少一个这样的子系统中，用于选择性地访问阵列内的单元的所有晶体管都是第二类型的晶体管，例如n型晶体管。本地字线驱动器耦合到延伸穿过阵列的相应字线。每个本地字线驱动器包括至少一个晶体管。然而，本地字线驱动器中的所有晶体管都是第二类。第二种类型的半导体材料的阱也形成在第一类型的材料中，并且使用该阱形成多个全局字线驱动器。公开了其他子系统和方法。

54. 发明申请

US20110103158A1 LOW VOLTAGE SENSING SCHEME HAVING REDUCED ACTIVE POWER DOWN STANDBY CURRENT 有权
标题翻译：具有降低有功功率待机电流的低电压感测方案
公开(公告)号：US20110103158A1
公开(公告)日：2011-05-05
申请号：US13005453
申请日：2011-01-12
申请人： Tae Kim
发明人： Tae Kim
IPC分类号： G11C7/00 , G11C7/06
CPC分类号： G11C7/08 , G11C5/148 , G11C7/06 , G11C7/062 , G11C7/065 , G11C7/1006 , G11C7/12 , G11C7/22 , G11C11/4091 , G11C2207/065 , G11C2207/2227
摘要： A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
摘要翻译：低电压感测方案减少了存储器件中的有功功率下的待机漏电流。在Psense放大器控制线（例如ACT）和Vcc之间和/或在Nsense放大器控制线（例如RNL *）和Vss（地电位）之间使用钳位装置或二极管。钳位二极管在正常存储器操作期间不使能，但在有功掉电模式下导通，以减少通过ACT和/或RNL *节点的泄漏电流。连接到ACT节点的钳位装置可以在掉电模式下降低ACT线路上的电压，而连接到RNL *节点的钳位装置可能会在掉电模式下增加RNL *线路上的电压，以降低读出放大器的漏电流通过这些节点。由于管理摘要的规则，本摘要不应用于解释索赔。

55. 发明申请

US20110098613A1 Massage Device and Control Methods 审中-公开
标题翻译：按摩装置及控制方法
公开(公告)号：US20110098613A1
公开(公告)日：2011-04-28
申请号：US12909773
申请日：2010-10-21
申请人： Jonathan Thomas , John Pelochino , Akbar Dhanaliwala , Brian Krieger , Tae Kim
发明人： Jonathan Thomas , John Pelochino , Akbar Dhanaliwala , Brian Krieger , Tae Kim
IPC分类号： A61H1/00
CPC分类号： B25F5/02 , A61C17/221 , A61H7/005 , A61H19/40 , A61H23/0263 , A61H2201/0153 , A61H2201/5015 , A61H2201/5028 , A61H2201/5038 , A61H2201/5061 , A61H2201/5071 , A61H2201/5097
摘要： Provided are a system and method for controlling a device through changes in a pressure of a deformable chamber such as may be controlled by a user through a user's hand and/or body. In one example, a device with a deformable chamber detects pressure level changes from a baseline and modifies output parameters including modifications on the playback of stored patterns. In another example, a massage device with a deformable chamber records the most recent pressure level changes in a sequence, interprets the pressure level sequence as a sequence of power levels to a vibratory motor, and repeats back the interpretation until a further pressure input is received above a baseline. In another example, the massage device interprets the currently input sequence of pressure levels in real-time into a sequence of power levels delivered to the vibratory motor.
摘要翻译：提供了一种用于通过可变形室的压力的变化来控制装置的系统和方法，诸如可以由用户通过使用者的手和/或身体来控制。在一个示例中，具有变形室的装置检测来自基线的压力水平变化，并且修改输出参数，包括对所存储模式的回放的修改。在另一示例中，具有可变形室的按摩装置记录序列中最近的压力水平变化，将压力水平序列解释为振动马达的功率水平序列，并重复解释，直到接收到另外的压力输入高于基线。在另一个示例中，按摩装置将当前输入的压力级别实时地解释为递送到振动马达的功率级的序列。

56. 发明授权

US07872923B2 Low voltage sensing scheme having reduced active power down standby current 有权
标题翻译：低电压感测方案具有降低的有功功率的待机电流
公开(公告)号：US07872923B2
公开(公告)日：2011-01-18
申请号：US12079765
申请日：2008-03-28
申请人： Tae Kim
发明人： Tae Kim
IPC分类号： G11C7/10
CPC分类号： G11C7/08 , G11C5/148 , G11C7/06 , G11C7/062 , G11C7/065 , G11C7/1006 , G11C7/12 , G11C7/22 , G11C11/4091 , G11C2207/065 , G11C2207/2227
摘要： A low voltage sensing scheme reduces active power down standby leakage current in a memory device. During memory's active power down state, the leak current may increase because of the use of P and Nsense amplifiers having low threshold voltages (Vth) for low Vcc sensing of data signals. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
摘要翻译：低电压感测方案减少了存储器件中的有功功率下的待机漏电流。在存储器的有功断电状态期间，由于使用具有低阈值电压（Vth）的P和Nsense放大器用于数据信号的低Vcc感测，漏电流可能增加。在Psense放大器控制线（例如ACT）和Vcc之间和/或在Nsense放大器控制线（例如RNL *）和Vss（地电位）之间使用钳位装置或二极管。钳位二极管在正常存储器操作期间不使能，但在有功掉电模式下导通，以减少通过ACT和/或RNL *节点的泄漏电流。连接到ACT节点的钳位装置可以在掉电模式下降低ACT线路上的电压，而连接到RNL *节点的钳位装置可能会在掉电模式下增加RNL *线路上的电压，以降低读出放大器的漏电流通过这些节点。由于管理摘要的规则，本摘要不应用于解释索赔。

57. 发明授权

US07826293B2 Devices and methods for a threshold voltage difference compensated sense amplifier 有权
标题翻译：阈值电压差补偿读出放大器的器件和方法
公开(公告)号：US07826293B2
公开(公告)日：2010-11-02
申请号：US11986333
申请日：2007-11-20
申请人： Tae Kim , Howard C. Kirsch
发明人： Tae Kim , Howard C. Kirsch
IPC分类号： G11C7/00
CPC分类号： G11C7/08 , G11C7/062
摘要： A voltage compensated sense amplifier includes a pair of digit line nodes respectively coupled to a pair of transistors. A first pair of switches are adapted to cross-couple the gates of the transistors to the respective digit line node and a second pair of switches are adapted to couple the gates of the transistors to a voltage supply. The first and second pair of switches are coupled to respective gates of the transistors independent of the pair of transistors being respectively coupled to the digit line nodes.
摘要翻译：电压补偿读出放大器包括分别耦合到一对晶体管的一对数字线节点。第一对开关适于将晶体管的栅极交叉耦合到相应的数字线节点，并且第二对开关适于将晶体管的栅极耦合到电压源。第一和第二对开关耦合到晶体管的相应栅极，独立于一对晶体管分别耦合到数字线节点。

58. 发明申请

US20090212081A1 SLOSH CONTROLLED PERSONAL HYDRATION SYSTEM 有权
标题翻译： SLOSH控制个人水力系统
公开(公告)号：US20090212081A1
公开(公告)日：2009-08-27
申请号：US12034726
申请日：2008-02-21
申请人： Ezra LIANG , Page Hadden , Tae Kim , Winston Shih
发明人： Ezra LIANG , Page Hadden , Tae Kim , Winston Shih
IPC分类号： A45F3/16 , A45F5/00 , B67D5/64
CPC分类号： A45F3/20 , A45F3/04 , A45F3/12 , A45F2003/002 , A45F2003/003 , A45F2003/006 , A45F2003/166
摘要： The present invention relates to a personal hydration system. In one exemplary embodiment, the personal hydration system may comprise a hydration reservoir for containing a supply of hydrating fluid, the hydration reservoir may comprise a plurality of compartments. The hydration reservoir may have a low profile and may comprise at least one baffle.
摘要翻译：本发明涉及个人水合系统。在一个示例性实施例中，个人水合系统可以包括用于容纳水合流体供应的水化储存器，所述水合储存器可以包括多个隔室。水合储存器可以具有低轮廓并且可以包括至少一个挡板。

59. 发明申请

US20080159035A1 Array sense amplifiers, memory devices and systems including same, and methods of operation 有权
标题翻译：阵列读出放大器，包括其的存储器件和系统以及操作方法
公开(公告)号：US20080159035A1
公开(公告)日：2008-07-03
申请号：US11646735
申请日：2006-12-27
申请人： Chulmin Jung , Tae Kim
发明人： Chulmin Jung , Tae Kim
IPC分类号： G11C7/10 , G11C7/06
CPC分类号： G11C7/065 , G11C11/4091
摘要： A sense amplifier having an amplifier stage with decreased gain is described. The sense amplifier includes a first input/output (“I/O”) node and a second complementary I/O node. The sense amplifier includes two amplifier stages, each for amplifying a signal on one of the I/O nodes. The first amplifier stage, having a first conductivity-type, amplifies one of the I/O node towards a first voltage. The second amplifier stage, having a second conductivity-type, amplifies the other I/O node towards a second voltage. The sense amplifier also includes a resistance circuit coupled to the second amplifier stage to reduce the gain of the second amplifier stage thereby reducing the rate of amplification of the signal on the corresponding I/O node.
摘要翻译：描述了具有减小的增益的放大器级的读出放大器。读出放大器包括第一输入/输出（“I / O”）节点和第二互补I / O节点。读出放大器包括两个放大器级，每个用于放大I / O节点之一上的信号。具有第一导电类型的第一放大器级将第一电压的I / O节点之一放大。具有第二导电类型的第二放大器级将第二电压放大到另一个I / O节点。读出放大器还包括耦合到第二放大器级的电阻电路，以减小第二放大器级的增益，从而降低相应I / O节点上的信号的放大率。

60. 发明申请

US20070291760A1 Apparatus and Method For Dualizing an Asynchronous Transfer Mode (Atm) Router in a Cdma2000 System 审中-公开
标题翻译：用于在Cdma2000系统中双向异步传输模式（Atm）路由器的设备和方法
公开(公告)号：US20070291760A1
公开(公告)日：2007-12-20
申请号：US10585602
申请日：2005-01-14
申请人： Tae Kim
发明人： Tae Kim
IPC分类号： H04L12/28
CPC分类号： H04L12/5601 , H04L41/0846 , H04L45/60 , H04L49/30 , H04L49/552 , H04L2012/5607 , H04L2012/5618 , H04L2012/5627 , H04W24/04 , H04W88/12
摘要： The present invention provides an apparatus and method for dualizing an Asynchronous Transfer Mode (ATM) router in a CDMA2000 system. In a conventional wireless communication system, an ATM router in a Base Station Controller (BSC) has two separate dualized main central processing boards, which are also referred to as ADSL Subscriber Physical board Assembly (ASPA) boards. Each of the ASPA boards includes one operation and maintenance processor, which maintains configuration and operation information. One of the conventional dualized ASPA boards transmits its configuration and operation information to the other, or receives the information from the other, in the form of message. This is in order to maintain the consistency between the information of the dualized ASPA boards, as needed. Such message passing, however, is generally time consuming and may possibly create network overload. According to the invention, the dualized ASPA boards communicate the configuration and operation information with each other using a File Transfer Protocol (FTP), rather than by message passing. Accordingly, communicating the information takes relatively less time, which can considerably reduce the whole system loads and decrease the possibility of data inconsistency between the dualized ASPA boards.
摘要翻译：本发明提供了一种用于在CDMA2000系统中二次化异步传输模式（ATM）路由器的装置和方法。在传统的无线通信系统中，基站控制器（BSC）中的ATM路由器具有两个单独的二元化主中央处理板，也被称为ADSL用户物理板组装（ASPA）板。每个ASPA板包括一个操作和维护处理器，它维护配置和操作信息。传统的二进制ASPA板之一将其配置和操作信息传输到另一个，或以消息的形式从另一个接收信息。这是为了根据需要保持二元化ASPA板的信息之间的一致性。然而，这样的消息传递通常是耗时的，并且可能产生网络过载。根据本发明，二进制ASPA板使用文件传输协议（FTP）来传送配置和操作信息，而不是通过消息传递。因此，传达信息所需的时间相对较少，这可以大大减少整个系统负载，并降低二元化ASPA板之间数据不一致的可能性。

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