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51. 发明申请

US20060222719A1 Articles of manufacture made from agave residue, and methods for making such articles 审中-公开
标题翻译：由龙舌兰渣制成的制品，以及制造这种制品的方法
公开(公告)号：US20060222719A1
公开(公告)日：2006-10-05
申请号：US11098299
申请日：2005-04-04
申请人： Eaman Tang , David Chow
发明人： Eaman Tang , David Chow
IPC分类号： A61K36/00
CPC分类号： A61K36/88 , A61K2300/00
摘要： Articles of manufacture are produced from a composition comprising agave plant residue and a thermosetting polymer resin.
摘要翻译：制品由含有龙舌兰植物残渣和热固性聚合物树脂的组合物制成。

52. 发明申请

US20060147769A1 Integration of an electrical diode within a fuel cell 有权
标题翻译：在燃料电池内集成一个二极管
公开(公告)号：US20060147769A1
公开(公告)日：2006-07-06
申请号：US11028837
申请日：2005-01-04
申请人： Michael Murphy , Mark Mathias , David Chow
发明人： Michael Murphy , Mark Mathias , David Chow
IPC分类号： H01M8/04 , H01M8/10 , H01M8/24
CPC分类号： H01M8/04552 , H01M8/0202 , H01M8/04753 , H01M8/0494 , H01M8/1007 , H01M8/241 , H01M8/2457
摘要： A fuel cell system that employs a diode electrically coupled between bipolar plates in a fuel cell of a fuel cell stack for preventing the fuel cell between the plates from reversing its polarity. The diode is a thin-sheet p-n diode including doped semiconductor layers and has a thickness relative to the thickness of the MEA in the fuel cell so that the overall stack thickness does not increase. When the fuel cell is operating properly the diode does not conduct and all of the current through the fuel cell goes through the MEA. If the electric load on the stack increases to a level beyond the capability of the fuel cell, where the potential across the fuel cell goes significantly below zero, the diode will begin to conduct so that any current that cannot travel through the MEA with the cell voltage less than one negative forward diode voltage drop is able to go around the MEA through the diode.
摘要翻译：一种燃料电池系统，其采用电耦合在燃料电池堆的燃料电池中的双极板之间的二极管，用于防止板之间的燃料电池反转其极性。二极管是包括掺杂半导体层的薄片p-n二极管，并且具有相对于燃料电池中的MEA的厚度的厚度，使得整个堆叠厚度不增加。当燃料电池正常工作时，二极管不导通，并且通过燃料电池的电流全部通过MEA。如果堆叠上的电负载增加到超过燃料电池能力的水平，其中燃料电池两端的电位明显低于零，则二极管将开始导通，使得任何不能通过MEA的电流流过电池小于1负的正向二极管电压降可通过二极管绕过MEA。

53. 发明申请

US20060095043A1 Adjustable instrumentation for spinal implant insertion 有权
标题翻译：用于脊柱植入物插入的可调节仪器
公开(公告)号：US20060095043A1
公开(公告)日：2006-05-04
申请号：US11253410
申请日：2005-10-19
申请人： Erik Martz , Jo-Wen Lin , David Chow , Daniel Rosenthal
发明人： Erik Martz , Jo-Wen Lin , David Chow , Daniel Rosenthal
IPC分类号： A61B17/58
CPC分类号： A61F2/4611 , A61B17/1604 , A61B17/1606 , A61B17/1659 , A61B17/1671 , A61B17/320016 , A61B90/50 , A61B2017/00261 , A61B2017/00464 , A61B2017/0256 , A61B2017/2904 , A61B2017/2931 , A61F2/442 , A61F2/4455 , A61F2002/30538 , A61F2002/30795 , A61F2002/4624 , A61F2002/4627 , A61F2002/4628 , A61F2002/4629 , A61F2002/4679 , A61F2250/0006
摘要： A plurality of differently configured bone spinal implants for insertion in a spine have a cylindrical bore for receiving an insertion head stud. A plurality of instruments are disclosed each of which have a first connection element which is either a male or female member such as e.g., a ball and socket, a cylinder and socket and so on for forming either a stationary or articulating interchangeable joint for a plurality of disc processing heads or implant insertion heads. The plurality of disc space processing heads or implant insertion heads have a complementary second joint member for interchangeable attachment to the first connection element. The implant insertion heads or disc processing heads have different configurations for different shaped implants. Different instrument insertion or disc processing heads such as implant inserters, impactors, rasps, distractors, curettes, rongeur, and so on are disclosed as being interchangeable with a common instrument in which articulating or fixed joints are provided the interchangeable heads.
摘要翻译：用于插入脊椎的多个不同构造的骨脊椎植入物具有用于接收插入头钉的圆柱形孔。公开了多个仪器，每个仪器具有第一连接元件，该第一连接元件是阳或阴构件，例如球窝，气缸和插座等，用于形成用于多个的静止或可铰接的可互换接头的盘处理头或植入物插入头。多个盘空间处理头或植入物插入头具有用于可互换连接到第一连接元件的互补的第二关节构件。植入物插入头或椎间盘处理头具有不同形状的植入物的不同构型。公开了不同的仪器插入或盘处理头，例如植入物插入器，冲击器，锉刀，牵引器，刮刀，护腿等，其可与可互换的头部提供关节或固定接头的通用仪器互换。

54. 发明申请

US20050201140A1 Memory device, circuits and methods for operating a memory device 失效
公开(公告)号：US20050201140A1
公开(公告)日：2005-09-15
申请号：US11125923
申请日：2005-05-09
申请人： David Chow , Hans Dahl , Trygve Willassen
发明人： David Chow , Hans Dahl , Trygve Willassen
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory comprises a plurality of memory cells and circuitry to sense data thereof. Power supply decoupling circuitry may decouple supplies of the memory device during a portion of reading data. Additionally, ferroelectric domains of the memory cells may receive a series of polarization reversals to improve domain alignment and malleability. To drive reference cells of the memory with such polarization reversals, a multiplexer may be configured to swap a data bitline with a reference bitline so that reference cells may be accessed as regular data cells. While reading a ferroelectric memory, a self-timer circuit may monitor characteristics of the ferroelectric material and adjust an integration duration for a sense amplifier based on the monitored characteristics. A sampling-comparator may sample a signal related to the ferroelectric material at one instant, which may then be used subsequently thereafter by the self-timer circuit to influence an integration duration of the sense amplifier.

55. 发明申请

US20050162891A1 Ferroelectric memory device and method of reading a ferroelectric memory 失效
公开(公告)号：US20050162891A1
公开(公告)日：2005-07-28
申请号：US11086175
申请日：2005-03-21
申请人： David Chow
发明人： David Chow
IPC分类号： G06F13/00 , G11C5/06 , G11C7/00 , G11C7/02 , G11C8/00 , G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory device comprises a plurality of subarrays having a plurality of bitlines and a plurality of wordlines crossing over the bitlines. Ferroelectric material is disposed between the wordlines and the bitlines to define a ferroelectric cell at each crossing of the wordlines and bitlines. Each subarray further comprises left and right voltage converters disposed on opposite sides thereof, to drive respective first and second sets of wordlines within the subarray. A plurality of global wordlines are couple to the left and right voltage converters of each subarray and are configured to establish the drive levels for respective wordlines of the subarrays. A bitline multiplexer selectively couples the bitlines of a select subarray to a plurality of sense amplifiers.

56. 发明授权

US09168072B2 Inflatable interspinous spacer 有权
标题翻译：充气椎间盘
公开(公告)号：US09168072B2
公开(公告)日：2015-10-27
申请号：US12995480
申请日：2009-06-02
申请人： Wamis Singhatat , David Chow , Nigel G. Smith , Garland W. Fussell
发明人： Wamis Singhatat , David Chow , Nigel G. Smith , Garland W. Fussell
IPC分类号： A61B17/70 , A61B17/00
CPC分类号： A61B17/7065 , A61B2017/00557
摘要： The present invention is directed to an inflated interspinous spacer. The interspinous spacer is inserted into the interspinous space between adjacent spinous process in a deflated or unexpanded state, and is inflated or expanded with an injectable filler material. Upon inflation, the spacer preferably distracts the spinous processes and assumes a shape that retains the spacer in position and preferably mechanically locks with the spinous processes. The spacer includes two separate balloons configured to have different compressive modulus so that one balloon is softer and more deformable than the other balloon.
摘要翻译：本发明涉及一种膨胀的椎间间隔垫。椎间间隔被插入相邻棘突之间的棘突间隙，处于放气状态或未膨胀状态，并用可注射填充材料充气或膨胀。在膨胀时，间隔物优选地分散棘突并且采取将间隔物保持在适当位置并且优选地与棘突机械锁定的形状。间隔件包括被配置为具有不同压缩模量的两个分离的气囊，使得一个球囊比另一个球囊更软和更可变形。

57. 发明授权

US09095383B2 Bone-derived spacer assembly 有权
标题翻译：骨衍生间隔组件
公开(公告)号：US09095383B2
公开(公告)日：2015-08-04
申请号：US13061155
申请日：2009-08-28
申请人： Felix Aschmann , Justin Coppes , Robert J. Delurio , Benjamin S. Barrall , David Chow , Nicholas Angert
发明人： Felix Aschmann , Justin Coppes , Robert J. Delurio , Benjamin S. Barrall , David Chow , Nicholas Angert
IPC分类号： A61B17/70
CPC分类号： A61B17/7065
摘要： An allograft interspinous spacer for implantation into an interspinous space located between spinous process of adjacent vertebrae. The spacer preferably includes a body, a core and a plurality of deployable retainers. The body may be operatively associated with the plurality of deployable retainers. In use, after the body has been inserted into the interspinous space, the plurality of retainers is deployed so that they prevent migration of the spacer. The core is preferably sized and configured to be inserted and/or moved into operatively engagement with the body to deploy the plurality of retainers.
摘要翻译：同种异体移植间隔垫，用于植入位于相邻椎骨棘突之间的椎间盘间隙。间隔件优选地包括主体，芯部和多个可展开的保持器。身体可以与多个可部署的保持器可操作地相关联。在使用中，在身体已经插入椎间盘间隙之后，多个保持器被展开，使得它们防止间隔物的移动。芯优选地尺寸和构造成被插入和/或移动成与身体操作地接合以展开多个保持器。

58. 发明授权

US08986355B2 Facet fusion implant 有权
标题翻译：方面融合植入物
公开(公告)号：US08986355B2
公开(公告)日：2015-03-24
申请号：US13180422
申请日：2011-07-11
申请人： Nicholas Angert , Benjamin Barrall , David Chow , Justin Coppes , Lauren Pietruszynski
发明人： Nicholas Angert , Benjamin Barrall , David Chow , Justin Coppes , Lauren Pietruszynski
IPC分类号： A61B17/04 , A61B17/84 , A61B17/17 , A61B17/70 , A61B17/86 , A61B17/88 , A61B17/92 , A61B17/34 , A61B17/16
CPC分类号： A61B17/7064 , A61B17/1671 , A61B17/1757 , A61B17/3472 , A61B17/864 , A61B17/8872 , A61B17/92
摘要： Facet fusion implants with various body geometries are provided. The bodies of the facet fusion implants can be configured to minimize migration of the implants when the implants are inserted into facet joints. Surgical methods and accompanying surgical instrumentation for inserting the facet fusion implants into facet joints are provided.
摘要翻译：提供了具有各种身体几何形状的面融合植入物。小面融合植入物的主体可以被配置为当将植入物插入小关节时使植入物的迁移最小化。提供了将小面融合植入物插入小关节的手术方法和伴随的手术器械。

59. 发明授权

US08500778B2 Interspinous process spacer 有权
标题翻译：棘突间隔
公开(公告)号：US08500778B2
公开(公告)日：2013-08-06
申请号：US12162939
申请日：2007-01-31
申请人： Benjamin L. Jackson , David Chow , Robert J. Delurio
发明人： Benjamin L. Jackson , David Chow , Robert J. Delurio
IPC分类号： A61B17/70
CPC分类号： A61B17/7062 , A61B2017/0256
摘要： An interspinous process spacer is generally rectangular and may have an upper face that generally opposes a lower face, front and back sides that generally oppose each other, an end side, and a nose that generally opposes the end side. The spacer preferably has rounded edges between the upper face and the front, end, and back sides and between the lower face and the front, end, and back sides. The nose of the spacer is preferably asymmetrical and tapers integrally, distally, and inwardly from the first and second faces to form a generally pointed or rounded distal tip. A spacer may be inserted laterally into the interspinous space through a small, posterior midline incision, allowing the preservation of the supraspinous ligament. One or more spacers may be placed between spinous processes of adjacent vertebrae, and result in distraction of the spinous processes which may limit extension of the spine.
摘要翻译：棘突间间隔件通常是矩形的，并且可以具有通常与通常彼此相对的下表面，前侧和后侧相对的上表面，端面和通常与端侧相对的鼻部。间隔件优选地在上表面与前端，端部和后侧之间以及下表面与前端，端侧和后侧之间具有圆形边缘。间隔件的鼻部优选地是不对称的，并且从第一和第二面一体地，远端地和向内逐渐变细，以形成大致尖的或圆形的远侧末端。间隔物可以通过小的后中线切口横向插入椎间盘间隙，允许保留上棘韧带。一个或多个间隔物可以放置在相邻椎骨的棘突之间，并且导致棘突的分散，这可能限制脊柱的延伸。

60. 发明授权

US07989277B1 Integrated structure with transistors and Schottky diodes and process for fabricating the same 有权
标题翻译：具有晶体管和肖特基二极管的集成结构及其制造方法
公开(公告)号：US07989277B1
公开(公告)日：2011-08-02
申请号：US11853694
申请日：2007-09-11
申请人： Louis Luh , Keh-Chung Wang , Wah S. Wong , Miroslav Micovic , David Chow , Don Hitko
发明人： Louis Luh , Keh-Chung Wang , Wah S. Wong , Miroslav Micovic , David Chow , Don Hitko
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/08 , H01L29/872
摘要： A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.
摘要翻译：公开了一种用于制造包括高电子迁移率晶体管（HEMT）和肖特基二极管的集成III族氮化物结构的方法及其结果。使得垂直结肖特基二极管的集成成为可能，并且寄生电容和电阻以及二极管的物理尺寸最小化。还公开了一种制造包括双异质结构场效应晶体管（DHFET）和肖特基二极管的集成III族氮化物结构的方法及其结果。

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