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51. 发明申请

US20090210776A1 Memory device and memory data reading method 有权
标题翻译：存储器和存储器数据读取方式
公开(公告)号：US20090210776A1
公开(公告)日：2009-08-20
申请号：US12216744
申请日：2008-07-10
申请人： Kyoung Lae Cho , Jae Hong Kim , Yoon Dong Park , Jun Jin Kong , Dong Hyuk Chae
发明人： Kyoung Lae Cho , Jae Hong Kim , Yoon Dong Park , Jun Jin Kong , Dong Hyuk Chae
IPC分类号： H03M13/09 , G06F11/10
CPC分类号： G06F11/1072 , H03M13/09 , H03M13/15 , H03M13/1515 , H03M13/152
摘要： Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.
摘要翻译：示例性实施例可以提供存储器件和存储器数据读取方法。根据示例实施例的存储器件可以包括多位单元阵列，错误检测器，其可以从多位单元阵列中的存储器页读取第一数据页，并且可以检测第一数据页的错误位，以及估计器，其可以识别存储错误位的多位单元，并且可以估计存储在所识别的多位单元中的数据在第二数据页的数据中。因此，存储器件和存储器数据读取方法可以具有当读取存储在多位单元中的数据并且监视多位单元的状态而没有额外开销时减小误差的效果。

52. 发明授权

US07569479B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07569479B2
公开(公告)日：2009-08-04
申请号：US11636307
申请日：2006-12-08
申请人： Jae Hong Kim
发明人： Jae Hong Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76873
摘要： A method for fabricating a semiconductor device capable of preventing a device failure is provided. The method includes: forming an insulating layer with a contact hole on a semiconductor substrate; forming a seed layer on the contact hole through electroless plating process; and forming a metal interconnection in the contact hole on the seed layer.
摘要翻译：提供一种制造能够防止装置故障的半导体装置的方法。该方法包括：在半导体衬底上形成具有接触孔的绝缘层; 通过化学镀处理在接触孔上形成种子层; 以及在种子层的接触孔中形成金属互连。

53. 发明申请

US20090181528A1 Method of Forming Gate Electrode 失效
标题翻译：形成栅极电极的方法
公开(公告)号：US20090181528A1
公开(公告)日：2009-07-16
申请号：US12345832
申请日：2008-12-30
申请人： Eun Shil Park , Kwon Hong , Jae Hong Kim , Jae Hyoung Koo
发明人： Eun Shil Park , Kwon Hong , Jae Hong Kim , Jae Hyoung Koo
IPC分类号： H01L21/20
CPC分类号： H01L21/28035 , H01L21/02576 , H01L21/0262 , H01L29/4925
摘要： The present invention discloses to a method of forming a gate electrode, the method according to the present invention comprises the steps of forming a lower amorphous silicon layer using silane (SiH4) gas and nitrous oxide (N2O) gas; forming an upper amorphous silicon layer on the lower amorphous silicon layer; and crystallizing the lower and upper amorphous silicon layers through a thermal process.
摘要翻译：本发明公开了一种形成栅电极的方法，根据本发明的方法包括以下步骤：使用硅烷（SiH4）气和一氧化二氮（N2O）气形成下一非晶硅层; 在所述下部非晶硅层上形成上部非晶硅层; 并通过热过程使下部和上部非晶硅层结晶。

54. 发明申请

US20090119569A1 Encoding system and method for encoding error control codes within bit streams 有权
标题翻译：用于对位流内的错误控制代码进行编码的编码系统和方法
公开(公告)号：US20090119569A1
公开(公告)日：2009-05-07
申请号：US12149214
申请日：2008-04-29
申请人： Heeseok Eun , Jae Hong Kim , Sung Chung Park
发明人： Heeseok Eun , Jae Hong Kim , Sung Chung Park
IPC分类号： H03M13/03 , G06F11/10
CPC分类号： H03M13/2906 , G06F11/1072 , H03M13/2732
摘要： An encoding system for encoding error control codes may include a first encoder configured to encode an input bit stream to generate first bit streams of C-bits, where c is an integer greater than zero, and a second encoder may be configured to receive the first bit streams and shuffle data of the received first bit streams to generate second bit streams. The data shuffling of the first bit streams may adjust an error distribution of the second bit streams. An encoding method may include encoding an input bit stream to generate first bit streams of C-bits, and receiving the first bit streams and shuffling data of the received first bit streams to generate second bit streams. An error distribution of the second bit streams may be adjusted based on the data shuffling.
摘要翻译：用于编码错误控制代码的编码系统可以包括第一编码器，其被配置为编码输入比特流以产生C比特的第一比特流，其中c是大于零的整数，并且第二编码器可以被配置为接收第一对流接收的第一位流进行数据流和混洗，生成第二位流。第一比特流的数据混洗可以调整第二比特流的误差分布。编码方法可以包括编码输入比特流以产生C比特的第一比特流，以及接收所接收的第一比特流的第一比特流和混洗数据以产生第二比特流。可以基于数据混洗来调整第二比特流的误差分布。

55. 发明公开

US20240122480A1 SYSTEM AND APPARATUS FOR SENSING ABNORMALITY OF BREAST IMPLANT 审中-公开
公开(公告)号：US20240122480A1
公开(公告)日：2024-04-18
申请号：US18394375
申请日：2023-12-22
申请人： Jae Hong Kim
发明人： Jae Hong Kim
IPC分类号： A61B5/00
CPC分类号： A61B5/0053 , A61B5/686
摘要： An apparatus for sensing abnormality of a breast implant is proposed. The apparatus may include a sensor signal receiver to receive a pressure signal indicating a pressure applied to a breast implant inserted in a body from at least one sensor module disposed on the breast implant. The apparatus may also include a memory to store a predetermined reference pressure value, a predetermined first tolerance, and a predetermined second tolerance. The apparatus may further include an abnormality determining processor configured to determine whether there is an abnormality in the breast implant based on a pressure value indicated by the pressure signal received by the sensor signal receiver and the reference pressure value, the first tolerance, and the second tolerance stored in the memory.

56. 发明申请

US20220160183A1 FLUID DISPENSER 有权
公开(公告)号：US20220160183A1
公开(公告)日：2022-05-26
申请号：US17669917
申请日：2022-02-11
申请人： Jae Hong Kim
发明人： Jae Hong Kim
IPC分类号： A47K5/12 , B05B11/00
摘要： This application relates to a fluid dispenser. In one aspect, the dispenser includes a body including an opening and an accommodating space for accommodating fluid, a lid for closing the opening, a pressing unit disposed on a side of the body, and a discharge unit disposed on the side at a position diagonally higher than the pressing unit and configured to discharge a predetermined amount of the fluid from the accommodating space when a pressure is applied to the pressing unit. The dispenser may also include a pump mechanism configured to pump the predetermined amount of the fluid from the accommodating space to the discharge unit when the pressure is applied to the pressing unit, and an air intake formed on a part of the lid and configured to flow air into the accommodating space when the predetermined amount of the fluid is discharged from the accommodating space.

57. 发明授权

US09495518B2 Method of reliably reading data stored in multi-level cell (MLC) non-volatile memory 有权
标题翻译：可靠地读取存储在多级单元（MLC）非易失性存储器中的数据的方法
公开(公告)号：US09495518B2
公开(公告)日：2016-11-15
申请号：US13407333
申请日：2012-02-28
申请人： Yong June Kim , Hong Rak Son , Jae Hong Kim , Sang Yong Yoon , Ki Jun Lee , Jung Soo Chung , Seong Hyeog Choi
发明人： Yong June Kim , Hong Rak Son , Jae Hong Kim , Sang Yong Yoon , Ki Jun Lee , Jung Soo Chung , Seong Hyeog Choi
IPC分类号： G06F12/00 , G06F21/00 , G06F12/14 , G11C11/00 , G11C11/56 , G11C16/26 , G11C16/34 , G06F11/10
CPC分类号： G06F21/00 , G06F11/1012 , G06F11/108 , G06F12/00 , G06F12/14 , G11C11/00 , G11C11/5642 , G11C16/26 , G11C16/3418
摘要： An apparatus and a method for reading from a non-volatile memory whereby soft decision data is used to determine the reliability of hard decision data. The hard decision data read from the non-volatile memory is de-randomized and the soft decision data read from the non-volatile memory is not de-randomized. Using the soft decision data, the hard decision data is decoded.
摘要翻译：一种用于从非易失性存储器读取的装置和方法，由此使用软判决数据来确定硬判决数据的可靠性。从非易失性存储器读取的硬判决数据被去随机化，并且从非易失性存储器读取的软判决数据不被去随机化。使用软判决数据，硬判决数据被解码。

58. 发明授权

US09158500B2 Device and method for processing data including generating a pseudo random number sequence 有权
标题翻译：用于处理数据的装置和方法，包括产生伪随机数序列
公开(公告)号：US09158500B2
公开(公告)日：2015-10-13
申请号：US13537297
申请日：2012-06-29
申请人： Ki Jun Lee , Jun Jin Kong , Yong June Kim , Jae Hong Kim , Hong Rak Son , Jung Soo Chung , Seong Hyeong Choi
发明人： Ki Jun Lee , Jun Jin Kong , Yong June Kim , Jae Hong Kim , Hong Rak Son , Jung Soo Chung , Seong Hyeong Choi
IPC分类号： G06F7/58
CPC分类号： G06F7/584 , G06F2207/583
摘要： A data processing device which includes a conversion circuit and a pseudo random number generator including a series connection of plural shift registers. The conversion circuit receives a pseudo random number sequence from an output of one of the plural shift registers excluding a last shift register of the series connection, and converts first data to second data using the received pseudo random number sequence.
摘要翻译：一种数据处理装置，包括转换电路和包括多个移位寄存器的串联连接的伪随机数发生器。转换电路从除串行连接的最后一个移位寄存器之外的多个移位寄存器中的一个的输出接收伪随机数序列，并且使用接收到的伪随机数序列将第一数据转换为第二数据。

59. 发明授权

US09063621B2 Touch sensor panel 有权
标题翻译：触摸传感器面板
公开(公告)号：US09063621B2
公开(公告)日：2015-06-23
申请号：US13540861
申请日：2012-07-03
申请人： Jae Hong Kim , Do Hwan Oh
发明人： Jae Hong Kim , Do Hwan Oh
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F2203/04101 , G06F2203/04104
摘要： A touch sensor panel used for a display device is provided. The touch sensor panel can precisely determine a touch location with a given area of electrodes, can reduce the number of channels required, and can reduce the influence of noise. In addition, the touch sensor panel can improve sensing resolution with a given number of electrode channels, can be robust against noise, and can improve linearity by precisely determining a touch location and visibility of displayed image by dummy electrodes.
摘要翻译：提供了用于显示装置的触摸传感器面板。触摸传感器面板可以精确地确定具有给定面积的电极的触摸位置，可以减少所需的通道数量，并且可以减少噪声的影响。此外，触摸传感器面板可以提供具有给定数量的电极通道的感测分辨率，可以抵抗噪声的鲁棒性，并且可以通过由虚拟电极精确地确定显示图像的触摸位置和可视性来提高线性度。

60. 发明授权

US08972775B2 Memory device and method of managing memory data error including determining verification voltages and changing threshold voltages based on a corrected error bit 有权
标题翻译：存储器件和管理存储器数据错误的方法，包括基于校正的误差位确定验证电压和改变阈值电压
公开(公告)号：US08972775B2
公开(公告)日：2015-03-03
申请号：US12453163
申请日：2009-04-30
申请人： Yong June Kim , Jae Hong Kim , Jun Jin Kong , Kyoung Lae Cho
发明人： Yong June Kim , Jae Hong Kim , Jun Jin Kong , Kyoung Lae Cho
IPC分类号： G06F11/07 , G11C16/10 , G06F11/10 , G11C11/56 , G11C16/34 , G11C29/00
CPC分类号： G11C16/10 , G06F11/1072 , G11C11/5628 , G11C11/5642 , G11C16/3454 , G11C29/00 , G11C2211/5621 , G11C2211/5634
摘要： Memory devices and/or methods of managing memory data errors are provided. A memory device detects and corrects an error bit of data read from a plurality of memory cells, and identifies a memory cell storing the detected error bit. The memory device assigns a verification voltage to each of the plurality of first memory cells, the assigned verification voltage corresponding to the corrected bit for the identified memory cell, the assigned verification voltage corresponding to the read data for the remaining memory cells. The memory device readjusts the data stored in the plurality of memory cells using the assigned verification voltage. Through this, it is possible to increase a retention period of the data of the memory device.
摘要翻译：提供了存储器件和/或管理存储器数据错误的方法。存储器件检测并校正从多个存储器单元读取的数据的错误位，并且识别存储检测到的错误位的存储单元。存储装置向多个第一存储器单元中的每一个分配验证电压，对应于所识别的存储单元的校正位的分配的验证电压，对应于剩余存储单元的读取数据的分配验证电压。存储装置使用分配的验证电压重新调整存储在多个存储单元中的数据。由此，可以增加存储装置的数据的保持期。

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