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51. 发明申请

US20130214330A1 Transistor Having Increased Breakdown Voltage 有权
标题翻译：具有增加的击穿电压的晶体管
公开(公告)号：US20130214330A1
公开(公告)日：2013-08-22
申请号：US13749477
申请日：2013-01-24
申请人： International Rectifier Corporation
发明人： Michael A. Briere , Naresh Thapar , Reenu Garg
IPC分类号： H01L29/778
CPC分类号： H01L29/7788 , H01L29/41758 , H01L29/42316 , H01L29/7787 , H01L29/78
摘要： There are disclosed herein various implementations of a transistor having an increased breakdown voltage. Such a transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor. In some implementations, the curved drain finger electrode end may be extended beyond the source finger electrode beginning to achieve the increased breakdown voltage.
摘要翻译：这里公开了具有增加的击穿电压的晶体管的各种实施方式。这种晶体管包括具有源极指电极开始的源极指电极和源极指极电极端。晶体管还包括具有弯曲的漏极指状电极端的漏极指电极，其具有增加的曲率半径。在弯曲的漏极指状电极端处产生的减小的电场允许增加的击穿电压和更坚固和可靠的晶体管。在一些实施方案中，弯曲的漏极指状电极端可以延伸超过源极指状电极开始以实现增加的击穿电压。

52. 发明申请

US20130196490A1 Method and Apparatus for Growing a III-Nitride Layer 有权
标题翻译：生长III型氮化物层的方法和装置
公开(公告)号：US20130196490A1
公开(公告)日：2013-08-01
申请号：US13788318
申请日：2013-03-07
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L21/02
CPC分类号： H01L21/0257 , C30B29/403 , C30B33/04 , H01J37/3171 , H01J2237/188 , H01L21/02381 , H01L21/024 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L21/26546 , H01L29/2003
摘要： A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method.
摘要翻译：一种包括在III族氮化物体在衬底上生长时掺杂掺杂物的方法，以及用于实施该方法的装置。

53. 发明申请

US20130105814A1 Active Area Shaping for III-Nitride Devices 有权
标题翻译：三氮化硼器件的主动区域整形
公开(公告)号：US20130105814A1
公开(公告)日：2013-05-02
申请号：US13721573
申请日：2012-12-20
申请人： International Rectifier Corporation
发明人： Michael A. Briere , Paul Bridger , Jianjun Cao
IPC分类号： H01L29/20 , H01L29/66 , H01L29/78
CPC分类号： H01L29/778 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42376 , H01L29/51 , H01L29/66431 , H01L29/66462 , H01L29/66477 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same.
摘要翻译：一种III族氮化物异质结功率半导体器件及其制造方法，其包括具有栅极阱的钝化体，其具有比其底部口宽的顶部口。

54. 发明授权

US09362267B2 Group III-V and group IV composite switch 有权
标题翻译： III-V组和IV组复合开关
公开(公告)号：US09362267B2
公开(公告)日：2016-06-07
申请号：US13780436
申请日：2013-02-28
申请人： International Rectifier Corporation
发明人： Michael A. Briere , Tim McDonald
IPC分类号： H01L21/00 , H01L27/04 , H01L25/07 , H01L25/18 , H01L29/20
CPC分类号： H01L27/04 , H01L25/07 , H01L25/18 , H01L29/2003 , H01L2224/16 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： In one implementation, a group III-V and group IV composite switch includes a group IV transistor in a lower active die, the group IV transistor having a source and a gate situated on a bottom side of the lower active die. The group III-V and group IV composite switch also includes a group III-V transistor in an upper active die stacked over the lower active die, the group III-V transistor having a drain, a source, and a gate situated on a top side of the upper active die. The source of the group III-V transistor is electrically coupled to a drain of the group IV transistor using a through-semiconductor via (TSV) of the upper active die.
摘要翻译：在一个实施方案中，III-V族和IV族复合开关包括在下有源管芯中的IV族晶体管，该IV族晶体管具有源极和位于下部有源裸片底部的栅极。 III-V族和IV族复合开关还包括在下部有源裸片上堆叠的上部有源管芯中的III-V族晶体管，具有位于顶部的漏极，源极和栅极的III-V晶体管上活动模具的一侧。使用上部有源管芯的贯通半导体通孔（TSV）将III-V族晶体管的源极电耦合到IV族晶体管的漏极。

55. 发明授权

US09318592B2 Active area shaping of III-nitride devices utilizing a source-side field plate and a wider drain-side field plate 有权
标题翻译：使用源极场板和较宽的漏极侧场板的III族氮化物器件的有源区域成形
公开(公告)号：US09318592B2
公开(公告)日：2016-04-19
申请号：US14081982
申请日：2013-11-15
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/778 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/20 , H01L23/29 , H01L29/40 , H01L29/51 , H01L23/31
CPC分类号： H01L29/778 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/402 , H01L29/42376 , H01L29/518 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride heterojunction. A gate arrangement is situated in the gate well and includes a gate electrode, a source-side field plate, and a drain-side field plate. The source-side field plate and the drain-side field plate each include steps, and the drain-side field plate is wider than the source-side field plate.
摘要翻译：在示例性实施方案中，III族氮化物半导体器件包括III族氮化物异质结，其包括位于第二III族氮化物体上方的第一III族氮化物体，以形成二维电子气。 III族氮化物半导体器件还包括形成在电介质体中的栅极阱，该电介质体位于III族氮化物异质结之上。栅极布置位于栅极阱中，并且包括栅电极，源极场板和漏极侧场板。源极场板和漏极侧场板各自包括台阶，漏极侧场板比源侧场板宽。

56. 发明授权

US09252257B2 III-nitride semiconductor device with reduced electric field between gate and drain 有权
标题翻译：在栅极和漏极之间具有减小的电场的III族氮化物半导体器件
公开(公告)号：US09252257B2
公开(公告)日：2016-02-02
申请号：US14332589
申请日：2014-07-16
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/15 , H01L29/778 , H01L29/20 , H01L29/205 , H01L29/267 , H01L29/40 , H01L29/45 , H01L29/47 , H01L29/66 , H01L29/201
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/267 , H01L29/402 , H01L29/452 , H01L29/475 , H01L29/66462
摘要： A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.
摘要翻译：在III-氮化物半导体的每个电池的漏电极和栅极之间形成导电场板，并连接到源极以减小栅极和漏极之间的电场。电极可以被支撑在N + III-氮化物焊盘层上，并且栅极可以是肖特基栅极或绝缘栅极。

57. 发明申请

US20150357182A1 Fabrication of III-Nitride Power Semiconductor Device 审中-公开
标题翻译：三氮化硅功率半导体器件的制造
公开(公告)号：US20150357182A1
公开(公告)日：2015-12-10
申请号：US14831009
申请日：2015-08-20
申请人： International Rectifier Corporation
发明人： Robert Beach , Michael A. Briere , Paul Bridger
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0262 , H01L21/02631 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括使用至少两种截然不同的生长方法在衬底上生长过渡层。

58. 发明授权

US09129890B2 Group III-V device with a selectively modified impurity concentration 有权
标题翻译：具有选择性改性杂质浓度的III-V族元件
公开(公告)号：US09129890B2
公开(公告)日：2015-09-08
申请号：US14449057
申请日：2014-07-31
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/20 , H01L21/02 , H01L29/36 , H01L29/66 , H01L29/778 , H01L29/15 , H01L29/205 , H01L29/10
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02389 , H01L21/02455 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02584 , H01L21/0262 , H01L21/02634 , H01L29/1095 , H01L29/157 , H01L29/205 , H01L29/207 , H01L29/36 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L29/78
摘要： There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
摘要翻译：这里公开了半导体结构和方法的各种实施方式。半导体结构包括衬底，在衬底上的过渡体，以及具有在过渡体上方的底表面的III-V族中间体。半导体结构还包括III-V族中间体顶表面上的III-V族元件层。 III-V族中间体具有连续降低的杂质浓度，其中底表面处的较高杂质浓度在顶表面上连续地降低到较低的杂质浓度。

59. 发明申请

US20150115327A1 Group III-V Device Including a Buffer Termination Body 审中-公开
标题翻译：第III-V组装置，包括一个缓冲器终端机构
公开(公告)号：US20150115327A1
公开(公告)日：2015-04-30
申请号：US14505252
申请日：2014-10-02
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/66
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/66431 , H01L29/66462 , H01L29/7783
摘要： There are disclosed herein various implementations of a III-Nitride device and method for its fabrication. The III-Nitride device includes a III-Nitride buffer layer situated over a substrate, the III-Nitride buffer layer having a first bandgap. In addition, the device includes a III-Nitride heterostructure situated over the III-Nitride buffer layer and configured to produce a two-dimensional electron gas (2DEG); the III-Nitride heterostructure including a channel layer having a second bandgap smaller than the first bandgap. The III-Nitride device also includes a buffer termination body situated between the III-Nitride buffer layer and the channel layer, the buffer termination body including a III-Nitride material having a third bandgap smaller than the first bandgap and larger the second bandgap.
摘要翻译：在此公开了III型氮化物器件及其制造方法的各种实施方式。 III-氮化物器件包括位于衬底上的III-氮化物缓冲层，III-氮化物缓冲层具有第一带隙。另外，该器件包括位于III-氮化物缓冲层之上并被配置为产生二维电子气（2DEG）的III-氮化物异质结构; 该III-氮化物异质结构包括具有小于第一带隙的第二带隙的沟道层。所述III-氮化物装置还包括位于所述III-氮化物缓冲层和所述沟道层之间的缓冲端接体，所述缓冲端接体包括具有比所述第一带隙小的第三带隙和所述第二带隙较大的III-氮化物材料。

60. 发明申请

US20150037965A1 Fabrication of III-Nitride Semiconductor Device and Related Structures 有权
标题翻译：三氮化硅半导体器件及相关结构的制作
公开(公告)号：US20150037965A1
公开(公告)日：2015-02-05
申请号：US14515449
申请日：2014-10-15
申请人： International Rectifier Corporation
发明人： Robert Beach , Michael A. Briere , Paul Bridger
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0262 , H01L21/02631 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括使用至少两种截然不同的生长方法在衬底上生长过渡层。

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