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51. 发明申请

US20090008764A1 Ultra-Thin Wafer-Level Contact Grid Array 审中-公开
标题翻译：超薄晶圆级接触网格阵列
公开(公告)号：US20090008764A1
公开(公告)日：2009-01-08
申请号：US11772321
申请日：2007-07-02
申请人： Hsin-Hui Lee , Mirng-Li Lii
发明人： Hsin-Hui Lee , Mirng-Li Lii
IPC分类号： H01L23/488
CPC分类号： H05K3/3436 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/29 , H01L24/30 , H01L24/73 , H01L2224/0401 , H01L2224/0603 , H01L2224/13013 , H01L2224/13014 , H01L2224/13015 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2224/14131 , H01L2224/14132 , H01L2224/14135 , H01L2224/14136 , H01L2224/14177 , H01L2224/14179 , H01L2224/16 , H01L2224/731 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H05K2201/09781 , Y02P70/613 , H01L2924/014 , H01L2924/00014 , H01L2924/00
摘要： Wafer-level chip-scaled packaging (WLCSP) features are described in a semiconductor die having a plurality of lands providing electrical connection between a surface of the semiconductor die and an active layer of the semiconductor die. Each of the plurality of lands rises above the surface no more than 10 μm. The device also has a plurality of solder bars at corners of the semiconductor die, the plurality of solder bars also rising above the surface no more than 10 μm. The solder bars add overall contiguous surface area to the solder joints between the die package and its final attachment.
摘要翻译：在半导体管芯中描述了晶片级芯片级封装（WLCSP）特征，该半导体管芯具有提供半导体管芯的表面和半导体管芯的有源层之间的电连接的多个焊盘。多个区域中的每一个在表面上方上升不超过10um。该器件还在半导体管芯的拐角处具有多个焊料棒，多个焊料条也在表面上升不超过10um。焊料条将管芯封装与其最终连接件之间的焊接接头的整体连续表面积增加。

52. 发明申请

US20080296571A1 MULTI-PROJECT WAFER AND METHOD OF MAKING SAME 有权
标题翻译：多项目波形及其制作方法
公开(公告)号：US20080296571A1
公开(公告)日：2008-12-04
申请号：US11755461
申请日：2007-05-30
申请人： William Cheng , Mirng-Ji Lii , Chen Yung Ching , Hsin-Hui Lee
发明人： William Cheng , Mirng-Ji Lii , Chen Yung Ching , Hsin-Hui Lee
IPC分类号： H01L21/66 , H01L23/58
CPC分类号： G06Q50/04 , Y02P90/30
摘要： A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies of the first type operable. The wafer is provided with the operable dies of the first type and the inoperable dies of the second type on it, for testing of the dies of the first type.
摘要翻译：制造半导体晶片。晶片具有多个管芯。多个模具包括至少可操作的第一类型的可操作模具和不同于第一类型的第二类型的可操作模具。第二类型的模具被使得不可操作，同时保持第一类型的模具可操作。晶片在其上设置有第一类型的可操作模具和第二类型的不可操作模具，用于第一类型的模具的测试。

53. 发明授权

US07361990B2 Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads 有权
标题翻译：通过匹配接触垫和凸块的尺寸，减少高铅或无铅凸点的开裂
公开(公告)号：US07361990B2
公开(公告)日：2008-04-22
申请号：US11082298
申请日：2005-03-17
申请人： Szu Wei Lu , Hsin-Hui Lee , Chung Yu Wang , Mirng-Ji Lii
发明人： Szu Wei Lu , Hsin-Hui Lee , Chung Yu Wang , Mirng-Ji Lii
IPC分类号： H01L23/48 , H01L21/00 , H05K7/10
CPC分类号： H01L24/10 , H01L23/3114 , H01L23/49816 , H01L24/13 , H01L2224/05124 , H01L2224/05147 , H01L2224/05559 , H01L2224/05571 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/13 , H01L2224/13099 , H01L2924/00011 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15787 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2224/81805 , H01L2924/013
摘要： A semiconductor package assembly comprises a first conductive pad on a semiconductor substrate; a second conductive pad on a package substrate; a bump physically coupled between the first conductive pad and the second conductive pad, wherein the bump is substantially lead-free or high-lead-containing; the bump has a first interface with the first conductive pad, the first interface having a first linear dimension; the bump has a second interface with the second conductive pad, the second interface having a second linear dimension; and wherein the ratio of the first linear dimension and the second linear dimension is between about 0.7 and about 1.7.
摘要翻译：半导体封装组件包括半导体衬底上的第一导电焊盘; 封装衬底上的第二导电焊盘; 物理耦合在所述第一导电焊盘和所述第二导电焊盘之间的突起，其中所述突起基本上是无铅或高含铅的; 所述凸块具有与所述第一导电焊盘的第一界面，所述第一界面具有第一线性尺寸; 所述凸块具有与所述第二导电焊盘的第二接口，所述第二接口具有第二线性尺寸; 并且其中所述第一线性尺寸和所述第二线性尺寸的比率在约0.7和约1.7之间。

54. 发明授权

US07183137B2 Method for dicing semiconductor wafers 有权
标题翻译：切割半导体晶片的方法
公开(公告)号：US07183137B2
公开(公告)日：2007-02-27
申请号：US10725697
申请日：2003-12-01
申请人： Hsin-Hui Lee , Chien-Chao Huang , Chao-Hsiung Wang , Fu-Liang Yang , Chenming Hu
发明人： Hsin-Hui Lee , Chien-Chao Huang , Chao-Hsiung Wang , Fu-Liang Yang , Chenming Hu
IPC分类号： H01L21/50 , H01L21/78
CPC分类号： H01L21/78 , B28D5/00
摘要： A method is disclosed for dicing a wafer having a base material with a diamond structure. The wafer first undergoes a polishing process, in which a predetermined portion of the wafer is polished away from its back side. The wafer is then diced through at least one line along a direction at a predetermined offset angle from a natural cleavage direction of the diamond structure.
摘要翻译：公开了一种用于切割具有金刚石结构的基底材料的晶片的方法。晶片首先进行抛光处理，其中将晶片的预定部分从其背面抛光。然后将晶片沿着与金刚石结构的天然裂解方向成预定偏移角的方向通过至少一条线切割。

55. 发明申请

US20060043576A1 Structures and methods for heat dissipation of semiconductor integrated circuits 有权
标题翻译：半导体集成电路散热的结构和方法
公开(公告)号：US20060043576A1
公开(公告)日：2006-03-02
申请号：US10925612
申请日：2004-08-25
申请人： Hsin-Hui Lee
发明人： Hsin-Hui Lee
IPC分类号： H01L23/34
CPC分类号： H01L24/32 , H01L21/563 , H01L23/3677 , H01L23/433 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/29007 , H01L2224/32057 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83385 , H01L2924/00014 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/10158 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/3512 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Structures and methods for semiconductor integrated circuits with respect to heat dissipation are provided. The structure comprises a die having a first surface and a second surface. The first surface has an opening in it, and the second surface has a contact pad formed on it. The first surface is opposite to the second surface. A conductive layer is formed over the first surface, covering a surface of the opening.
摘要翻译：提供了关于散热的半导体集成电路的结构和方法。该结构包括具有第一表面和第二表面的模具。第一表面在其中具有开口，并且第二表面具有形成在其上的接触垫。第一表面与第二表面相对。导电层形成在第一表面上，覆盖开口的表面。

56. 发明授权

US06974659B2 Method of forming a solder ball using a thermally stable resinous protective layer 有权
标题翻译：使用热稳定树脂保护层形成焊球的方法
公开(公告)号：US06974659B2
公开(公告)日：2005-12-13
申请号：US10051906
申请日：2002-01-16
申请人： Chao-Yuan Su , Chia-Fu Lin , Hsin-Hui Lee , Yen-Ming Chen , Kai-Ming Ching , Li-Chih Chen
发明人： Chao-Yuan Su , Chia-Fu Lin , Hsin-Hui Lee , Yen-Ming Chen , Kai-Ming Ching , Li-Chih Chen
IPC分类号： H01L21/60 , H01L23/485 , G03F7/16 , G03F7/20 , G03F7/40 , H01L21/441 , B23K35/14
CPC分类号： H01L24/11 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/11 , H01L2224/1147 , H01L2224/11502 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/30107 , H01L2924/00
摘要： A method for protecting a semiconductor process wafer surface from contacting thermally degraded photoresist including providing a semiconductor process wafer having a process surface; forming a protective layer over selected areas of the process surface said protective layer including a resinous organic material having a glass transition temperature (Tg) that is about greater than a thermal treatment temperature; forming a photoresist layer over at least a portion of the protective layer to include a photolithographic patterning process; and subjecting the semiconductor process wafer to the thermal treatment temperature.
摘要翻译：一种用于保护半导体工艺晶片表面免受接触热降解光刻胶的方法，包括提供具有工艺表面的半导体工艺晶片; 在所述工艺表面的选定区域上形成保护层，所述保护层包括玻璃化转变温度（Tg）大于热处理温度的树脂有机材料; 在所述保护层的至少一部分上形成光致抗蚀剂层以包括光刻图案化工艺; 并对半导体工艺晶片进行热处理温度。

57. 发明申请

US20050178581A1 Underfilling efficiency by modifying the substrate design of flip chips 失效
标题翻译：通过修改倒装芯片的衬底设计，填充效率不足
公开(公告)号：US20050178581A1
公开(公告)日：2005-08-18
申请号：US10781169
申请日：2004-02-18
申请人： Hsin-Hui Lee , Chao-Yuan Su
发明人： Hsin-Hui Lee , Chao-Yuan Su
IPC分类号： H01L21/56 , H01L23/13 , H05K1/02
CPC分类号： H01L21/563 , H01L23/13 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/00
摘要： A substrate structure comprising a substrate; a solder mask is formed over the substrate; and a metal trace structure formed within the solder mask. The metal trace structure including a channel therein for the receipt of underfill. The metal trace structure further including a central portion with arms radiating outwardly therefrom, dividing the solder mask into separate areas. A method of underfilling a chip wherein a chip having a pattern of solder bumps formed on the underside of the chip is placed underside first onto the metal trace structure of the present invention. The solder bump pattern including openings over the metal trace structure. Underfill is introduced into the metal trace structure so that the underfill flows from the metal trace structure and between the solder bumps to underfill the chip.
摘要翻译：一种衬底结构，包括衬底; 在衬底上形成焊料掩模; 以及形成在焊料掩模内的金属迹线结构。金属迹线结构包括用于接收底部填充物的通道。金属轨迹结构还包括具有从其向外辐射的臂的中心部分，将焊接掩模分成不同的区域。一种底部填充芯片的方法，其中具有形成在芯片的下侧上的焊料凸块图案的芯片首先放置在本发明的金属迹线结构上。焊料凸块图案包括在金属迹线结构上的开口。底部填充物被引入到金属迹线结构中，使得底部填充物从金属迹线结构和焊料凸块之间流动，从而在芯片下面填充。

58. 发明授权

US06756294B1 Method for improving bump reliability for flip chip devices 失效
标题翻译：用于提高倒装芯片器件的突发可靠性的方法
公开(公告)号：US06756294B1
公开(公告)日：2004-06-29
申请号：US10060483
申请日：2002-01-30
申请人： Yen-Ming Chen , Chia-Fu Lin , Shun-Liang Hsu , Kai-Ming Ching , Hsin-Hui Lee , Chao-Yuan Su , Li-Chih Chen
发明人： Yen-Ming Chen , Chia-Fu Lin , Shun-Liang Hsu , Kai-Ming Ching , Hsin-Hui Lee , Chao-Yuan Su , Li-Chih Chen
IPC分类号： H01L2144
CPC分类号： H01L24/13 , H01L24/11 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05572 , H01L2224/05644 , H01L2224/1147 , H01L2224/11472 , H01L2224/11912 , H01L2224/13006 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/15787 , H01L2924/30107 , H01L2924/351 , H01L2224/05552 , H01L2924/00 , H01L2924/00014
摘要： A new method is provided for the creation of a solder bump. Conventional methods are initially followed, creating a patterned layer of Under Bump Metal over the surface of a contact pad. A layer of photoresist is next deposited, this layer of photoresist is patterned and developed creating a resist mask having a T-shape opening aligned with the contact pad. This T-shaped opening is filled with a solder compound, creating a T-shaped layer of solder compound on the surface of the layer of UBM. The layer of photoresist is removed, exposing the Created T-shaped layer of solder compound, further exposing the layer of UBM. The layer of UBM is etched using the T-shaped layer of solder compound as a mask. Reflow of the solder compound results in creating a solder ball.
摘要翻译：提供了一种创建焊料凸块的新方法。最初遵循常规方法，在接触垫的表面上形成凹凸金属图案层。随后沉积一层光致抗蚀剂，该光致抗蚀剂层被图案化和显影，产生具有与接触焊盘对准的T形开口的抗蚀剂掩模。该T形开口填充有焊料化合物，在UBM层的表面上形成T形焊料化合物层。去除光致抗蚀剂层，暴露焊料化合物的产生的T形层，进一步暴露UBM层。使用焊料化合物的T形层作为掩模蚀刻UBM层。焊料复合物的回流导致产生焊球。

59. 发明授权

US06636313B2 Method of measuring photoresist and bump misalignment 有权
标题翻译：测量光刻胶和凸块未对准的方法
公开(公告)号：US06636313B2
公开(公告)日：2003-10-21
申请号：US10045413
申请日：2002-01-12
申请人： Yen-Ming Chen , Chia-Fu Lin , Kai-Ming Ching , Chao-Yuan Su , Hsin-Hui Lee , Li-Chih Chen
发明人： Yen-Ming Chen , Chia-Fu Lin , Kai-Ming Ching , Chao-Yuan Su , Hsin-Hui Lee , Li-Chih Chen
IPC分类号： G01B1100
CPC分类号： G03F7/70633 , G01B11/272 , H01L24/11 , H01L2224/0224 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05093 , H01L2224/05572 , H01L2924/14 , H01L2924/00
摘要： A method including the acts of providing a semiconductor device having a plurality of misalignment ruler markers formed therein for measuring removable layer opening misalignment in the X and Y directions, a bond pad and the passivation layer with an opening therein down to the bond pad. A removable layer is formed over the semiconductor device and includes an opening therein down to the bond pad. Preferably this action includes depositing, patterning and developing a dry photoresist film layer over the semiconductor device with an opening therein down to the bond pad. The next act includes measuring the misalignment of the opening in the passivation layer by counting the number of misalignment ruler markers visibly exposed by the opening in the X-direction and also the Y-direction.
摘要翻译：一种方法，包括提供半导体器件的动作，所述半导体器件具有形成在其中的多个不对准标尺标记，用于测量在X和Y方向上的可移除层开口未对准，接合焊盘和钝化层，其中开口向下到接合焊盘。可移除层形成在半导体器件上方并且包括其中向下到达接合焊盘的开口。优选地，该动作包括在半导体器件上沉积，图案化和显影干的光致抗蚀剂膜层，其中开口向下到接合焊盘。下一个动作包括通过计数由X方向和Y方向上的开口可见地露出的未对准标尺标记的数量来测量钝化层中的开口的未对准。

60. 发明申请

US20160313746A1 Proactive Pressure Stabilizing System and Method 有权
标题翻译：主动压力稳定系统和方法
公开(公告)号：US20160313746A1
公开(公告)日：2016-10-27
申请号：US15101912
申请日：2015-07-16
申请人： Chunyu WU , Hsin-Hui LEE
发明人： Hsin-Hui Lee
IPC分类号： G05D16/20
CPC分类号： G05D16/2066 , F17D1/02 , F17D1/04 , F17D1/20 , F17D3/01
摘要： System and method for gas pressure stabilization. The system comprises a pressure stabilizer which is divided into a receiving chamber and a pressure chamber by a flexible membrane, a booster device, a gas divider, and a control driver that can sense movement of the flexible membrane and control the gas divider accordingly. A pressure pilot is used to set the desired pressure in the pressure chamber. The pressure of the receiving chamber will stabilize to be the same with that of the pressure chamber regardless of the gas flow change or gas pressure change at the gas source, or the pressure fluctuation in the downstream system. The gas passing the system can eventually be recycled to a recycling system in the downstream without harming the environment.
摘要翻译：气压稳定系统及方法。该系统包括压力稳定器，其通过柔性膜分为接收室和压力室，增压装置，气体分配器和控制驱动器，其可以感测柔性膜的运动并相应地控制气体分配器。使用压力导向器来设定压力室中的所需压力。接收室的压力将稳定为与压力室的压力相同，而与气源的气体流量变化或气体压力变化或下游系统中的压力波动无关。通过系统的气体最终可以循环利用到下游的回收系统，而不会影响环境。

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