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51. 发明授权

US07662686B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07662686B2
公开(公告)日：2010-02-16
申请号：US11936339
申请日：2007-11-07
申请人： Tatsuya Fukumura , Yoshihiro Ikeda , Shunichi Narumi , Izumi Takesue
发明人： Tatsuya Fukumura , Yoshihiro Ikeda , Shunichi Narumi , Izumi Takesue
IPC分类号： H01L21/336
CPC分类号： H01L27/11517 , G11C16/0433 , H01L21/32053 , H01L21/32055 , H01L21/768 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/42376
摘要： A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.
摘要翻译：具有非易失性存储器的半导体器件的尺寸减小。在具有多个非易失性存储单元的AND型闪速存储器中，具有多个第一电极，与之交叉的多个字线，以及设置在分别位于多个相邻的第一电极之间且重叠的位置的多个浮置栅电极如平面图所示，多个字线如横截面那样形成为凸形，从而高于第一电极。结果，即使非易失性存储单元的尺寸减小，也可以容易地处理浮置栅电极。此外，可以提高字线的浮栅电极和控制栅电极之间的耦合比，而不增加非易失存储单元所占的面积。

52. 发明授权

US07632580B2 Perpendicular magnetic recording medium having an interlayer of a non-magnetic nickel alloy 有权
标题翻译：具有非磁性镍合金中间层的垂直磁记录介质
公开(公告)号：US07632580B2
公开(公告)日：2009-12-15
申请号：US11146348
申请日：2005-06-06
申请人： Yoshihiro Ikeda , Mary F. Minardi , Kentaro Takano , Qi-Fan Xiao
发明人： Yoshihiro Ikeda , Mary F. Minardi , Kentaro Takano , Qi-Fan Xiao
IPC分类号： G11B5/66
CPC分类号： G11B5/667 , G11B5/7325
摘要： Perpendicular magnetic recording media and methods of fabricating perpendicular magnetic recording media are described. The perpendicular magnetic recording medium of one embodiment includes an interlayer, an underlayer, and a perpendicular magnetic recording layer. The interlayer is comprised of a Ni-alloy having the characteristics of being nonmagnetic and having an FCC structure. The alloying element for the Ni-alloy may comprise one of V or Cr, or may comprise one of V, Cr, or W. The concentration of the alloying element is set such that the concentration of the alloying element is high enough to make the Ni-alloy non-magnetic, while low enough to maintain an FCC structure for the Ni-alloy.
摘要翻译：描述垂直磁记录介质和制造垂直磁记录介质的方法。一个实施例的垂直磁记录介质包括中间层，底层和垂直磁记录层。中间层由具有非磁性并具有FCC结构的特性的Ni合金构成。用于Ni合金的合金元素可以包括V或Cr中的一种，或者可以包括V，Cr或W中的一种。合金元素的浓度被设定为使合金元素的浓度高到足以使 Ni合金非磁性，同时足够低以维持Ni合金的FCC结构。

53. 发明授权

US07594307B2 Method for manufacturing piezoelectric resonator 有权
标题翻译：制造压电谐振器的方法
公开(公告)号：US07594307B2
公开(公告)日：2009-09-29
申请号：US11188981
申请日：2005-07-25
申请人： Tetsuya Morimura , Yoshihiro Ikeda , Makoto Irie , Motonori Matsushita
发明人： Tetsuya Morimura , Yoshihiro Ikeda , Makoto Irie , Motonori Matsushita
IPC分类号： H01L41/22 , H01L41/00
CPC分类号： H03H9/177 , H03H3/04 , H03H9/131 , H03H9/132 , H03H9/56 , H03H2003/0428 , H04R17/10 , Y10T29/42 , Y10T29/49128 , Y10T29/4913 , Y10T29/49135 , Y10T29/49156
摘要： A method of manufacturing a piezoelectric resonator includes forming first electrodes larger than vibrating electrodes in an area D1 including the vibrating electrodes on obverse and reverse surfaces of a piezoelectric substrate, and measuring the resonant frequency fr1 of a resonator including the first electrodes. The thickness of a metallic thin film required for frequency adjustment is determined based on the measured resonant frequency. Then, second electrodes formed of the metallic thin film having the determined thickness are formed in an area D2 including at least the vibrating electrodes of the piezoelectric substrate. By removing unnecessary portions of the first and second electrodes, a pattern of the resulting vibrating electrodes is formed. Thus, high-accuracy frequency adjustment can be achieved without the need for complicated positioning.
摘要翻译：制造压电谐振器的方法包括在压电基片的正面和反面上形成包括振动电极的区域D1中的大于振动电极的第一电极，以及测量包括第一电极的谐振器的谐振频率fr1。基于所测得的谐振频率来确定频率调节所需的金属薄膜的厚度。然后，在至少包括压电基板的振动电极的区域D2中形成具有确定厚度的金属薄膜形成的第二电极。通过去除第一和第二电极的不需要的部分，形成所得到的振动电极的图案。因此，可以实现高精度的频率调整，而不需要复杂的定位。

54. 发明申请

US20090162573A1 METHODS AND APPARATUS TO FABRICATE SOFT MAGNETIC FILM WITH PREFERRED UNIAXIAL ANISOTROPY FOR PERPENDICULAR RECORDING 有权
标题翻译：使用优选的单相异相来制作软磁片的方法和装置
公开(公告)号：US20090162573A1
公开(公告)日：2009-06-25
申请号：US11960006
申请日：2007-12-19
申请人： Gunn Choe , Yoshihiro Ikeda , Masayoshi Shimizu , Kiwamu Tanahashi
发明人： Gunn Choe , Yoshihiro Ikeda , Masayoshi Shimizu , Kiwamu Tanahashi
IPC分类号： H01F1/00
CPC分类号： H01F41/32 , B82Y25/00 , G11B5/667 , G11B5/8404 , H01F10/3268
摘要： Soft magnetic film fabricated with preferred uniaxial anisotropy for perpendicular recording. One type of cathode design has a field direction that is parallel to the direction of the Hex of the second SUL with a magnetically-pinned first SUL. In addition, SUL structures having low AP exchange energy also are disclosed. The SUL structure combines the cathode field direction of the SUL2 with the pinned SUL1. The SUL1 is magnetically pinned to the pinning layer and the pinning direction is parallel to the direction of the cathode field applied during deposition of the SUL1. High Hc ferro-magnetic materials may be deposited onto a heated substrate that is magnetized along the radial direction by the cathode field. The pinning field may be higher than the cathode field, indicating that the cathode field during deposition of the SUL2 cannot disturb the magnetic state of the SUL1 pinned to pinning layer.
摘要翻译：用于垂直记录的具有优选的单轴各向异性制造的软磁膜。一种类型的阴极设计具有平行于具有磁性固定的第一SUL的第二SUL的Hex的方向的场方向。此外，还公开了具有低AP交换能量的SUL结构。 SUL结构将SUL2的阴极场方向与固定SUL1相结合。 SUL1被磁性地固定到钉扎层，并且钉扎方向平行于在沉积SUL1期间施加的阴极场的方向。高Hc铁磁材料可以沉积在被阴极场沿径向磁化的加热衬底上。钉扎场可能高于阴极场，表明SUL2沉积期间的阴极场不能干扰固定到钉扎层的SUL1的磁状态。

55. 发明授权

US07485680B2 Process for producing rubbery polymer particle and process for producing resin composition containing the same 有权
标题翻译：制备橡胶状聚合物颗粒的方法和用于制备含有它的树脂组合物的方法
公开(公告)号：US07485680B2
公开(公告)日：2009-02-03
申请号：US10571068
申请日：2004-09-01
申请人： Ryuji Furukawa , Masakuni Ueno , Katsumi Yamaguchi , Chiho Yoshimi , Yoshihiro Ikeda
发明人： Ryuji Furukawa , Masakuni Ueno , Katsumi Yamaguchi , Chiho Yoshimi , Yoshihiro Ikeda
IPC分类号： C08F271/00 , C08F279/00 , C08L51/00 , C08L51/02
CPC分类号： C08C1/14 , C08C1/15 , C08J3/14 , C08J3/16 , C08J9/16 , C08J2321/02 , C08J2351/00
摘要： A process for efficiently producing an agglomerate resulting from removal of impurities from a water-base latex of rubbery polymer particles or dry Powder thereof and producing a dispersion having rubbery polymer particles dispersed in an organic solvent, and a process for efficiently producing a resin composition of low impurity content, in which the state of dispersion of rubbery polymer particles is excellent, from the above dispersion. In particular, a rubbery polymer particle agglomerate of low impurity content is obtained by first mixing a water-base latex of rubbery polymer particles with an organic solvent exhibiting partial solubility in water, bringing the resultant mixture into contact with water to thereby form a rubbery polymer particle agglomerate, and thereafter separating the water phase from the agglomerate/water phase mixture. Further, a resin composition of low impurity content having rubbe, polymer particles favorably dispersed is obtained by first adding an organic solvent to the above agglomerate, mixing the obtained dispersion with a polymerizable organic compound having a reactive group, such as an epoxy resin, and thereafter distilling off volatile components.
摘要翻译：一种有效地生产由橡胶状聚合物颗粒或其干粉末的水性胶乳除去杂质而产生的附聚物的方法，并且制备分散在有机溶剂中的具有橡胶状聚合物颗粒的分散体，以及有效地制备树脂组合物的方法由于上述分散体，橡胶状聚合物粒子的分散状态优异的杂质含量低。特别地，通过首先将橡胶状聚合物颗粒的水性胶乳与在水中显示部分溶解性的有机溶剂混合，使得到的混合物与水接触，从而形成橡胶状聚合物，得到低杂质含量的橡胶状聚合物颗粒聚集体颗粒附聚物，然后从附聚物/水相混合物中分离出水相。此外，通过首先向上述附聚物中加入有机溶剂，将得到的分散体与具有反应性基团的可聚合有机化合物如环氧树脂和然后蒸发挥发性成分。

56. 发明申请

US20080195378A1 Question and Answer Data Editing Device, Question and Answer Data Editing Method and Question Answer Data Editing Program 有权
标题翻译：问题和答案数据编辑设备，问题和答案数据编辑方法和问题答案数据编辑程序
公开(公告)号：US20080195378A1
公开(公告)日：2008-08-14
申请号：US11815621
申请日：2006-02-08
申请人： Satoshi Nakazawa , Takahiro Ikeda , Yoshihiro Ikeda , Kenji Satoh
发明人： Satoshi Nakazawa , Takahiro Ikeda , Yoshihiro Ikeda , Kenji Satoh
IPC分类号： G06F17/30
CPC分类号： G06F17/30654 , Y10S707/917 , Y10S707/944
摘要： The question and answer data editing device for editing dialogue content to generate question and answer data, includes a detecting unit that detects a part of the dialogue content similar to existing question and answer data stored, and a extracting unit that extracts a context in which the dialogue content is made from dialogue content in the proximity of the similar part detected and registers the context extracted as new question and answer data or as index information of the question and answer data.
摘要翻译：用于编辑对话内容以生成问答数据的问答数据编辑装置包括检测部分对应内容的检测单元，该部分与存储的存在的问答数据相似，提取单元提取其中对话内容由检测到的相似部分附近的对话内容进行，并且将所提取的上下文作为新的问答数据或作为问答数据的索引信息进行登记。

57. 发明申请

US20080075344A1 METHOD AND APPARATUS FOR CALCULATING INDEX CONCERNING LOCAL BLOOD FLOW CIRCULATIONS 有权
标题翻译：计算当地血液流通指数的方法和装置
公开(公告)号：US20080075344A1
公开(公告)日：2008-03-27
申请号：US11855195
申请日：2007-09-14
申请人： Kyojiro Nambu , Yoshihiro Ikeda
发明人： Kyojiro Nambu , Yoshihiro Ikeda
IPC分类号： G06K9/00
CPC分类号： A61B6/463 , A61B6/481 , A61B6/504 , A61B6/507 , G06T5/002 , G06T5/009 , G06T5/20 , G06T5/50 , G06T7/0012 , G06T2207/10081 , G06T2207/30016 , G06T2207/30104
摘要： First time-density curves concerning arteries in a specific region and second time-density curves concerning tissues in the specific region are prepared from a plurality of continuous images concerning the specific region of a subject into which a contrast medium is injected. Modulation transfer functions indicating local blood flow circulations in the tissues with respect to the arteries are calculated by curve-fitting so that residual errors of the second time-density curves are minimized with respect to convolution of the modulation transfer functions and first time-density curves. Indices concerning the local blood flow circulations with respect to the respective arteries are calculated from the modulation transfer functions. Maps of the indices for the arteries are prepared, and the maps of these indices are synthesized into one map in accordance with the residual errors for the first time-density curves.
摘要翻译：关于特定区域中的动脉的第一时间密度曲线和关于特定区域中的组织的第二时间密度曲线从关于注射了造影剂的对象的特定区域的多个连续图像制备。通过曲线拟合计算指示组织中相对于动脉的局部血流循环的调制传递函数，使得第二时间密度曲线的残差相对于调制传递函数和第一时间密度曲线的卷积最小化。根据调制传递函数计算关于各动脉的局部血流循环的指标。准备动脉索引图，根据第一时间密度曲线的残差，将这些指标的图合成为一幅图。

58. 发明申请

US20080055983A1 Semiconductor memory device comprising controllable threshold voltage dummy memory cells 审中-公开
标题翻译：半导体存储器件包括可控阈值电压虚拟存储器单元
公开(公告)号：US20080055983A1
公开(公告)日：2008-03-06
申请号：US11976299
申请日：2007-10-23
申请人： Hideaki Kurata , Yoshihiro Ikeda , Masahiro Shimizu , Kenji Kozakai , Satoshi Noda
发明人： Hideaki Kurata , Yoshihiro Ikeda , Masahiro Shimizu , Kenji Kozakai , Satoshi Noda
IPC分类号： G11C16/28
CPC分类号： G11C8/14
摘要： An object of the present invention is to provide a semiconductor memory device capable of preventing a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitch of word lines at an end of a memory block. Plural dummy word lines are disposed at an end of a memory block, a word driver is mounted for the dummy word line to control the threshold voltage of a dummy memory cell formed below the dummy word line. Also at the time of operating a memory area for storing data from the outside, a bias is applied to the dummy word line. The invention can prevent a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitches of word lines at an end of a memory block, and realize high yield and reliably operation.
摘要翻译：本发明的目的是提供一种半导体存储器件，其能够防止由于字线的下降引起的缺陷以及由于在存储器块的端部处的字线的间距的干扰而导致的图案精度的劣化。多个虚拟字线设置在存储器块的末端，为虚拟字线安装字驱动器以控制形成在虚拟字线下面的虚拟存储器单元的阈值电压。此外，在操作用于存储来自外部的数据的存储区域时，偏置被施加到虚拟字线。本发明可以防止由于字线下降引起的缺陷和由于记忆块末端的字线的间距的干扰导致的图案精度的劣化，并且实现高产率和可靠的操作。

59. 发明申请

US20080035985A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080035985A1
公开(公告)日：2008-02-14
申请号：US11882164
申请日：2007-07-31
申请人： Satoshi Shimizu , Yoshihiro Ikeda
发明人： Satoshi Shimizu , Yoshihiro Ikeda
IPC分类号： H01L29/788 , H01L21/31
CPC分类号： H01L27/115 , H01L21/7682 , H01L27/11521 , H01L27/11524
摘要： The semiconductor device which is hard to generate malfunction and whose reliability of an element is high, and its manufacturing method are offered.Each of a plurality of convex patterns is formed on the front surface of a semiconductor substrate so that it may have a floating gate and a control gate. The insulating layer has covered the side surface and the upper surface of a plurality of convex patterns, and the bottom between convex patterns. A contact interlayer insulating layer covers the cavity part located via an insulating layer between a plurality of convex patterns and on a plurality of convex patterns, and has a through hole. An insulating layer closes a through hole and occludes the cavity part.
摘要翻译：难以产生故障，元件的可靠性高的半导体装置及其制造方法。多个凸形图案中的每一个形成在半导体衬底的前表面上，使得其可以具有浮动栅极和控制栅极。绝缘层已经覆盖了多个凸形图案的侧表面和上表面，以及凸起图案之间的底部。接触层间绝缘层覆盖经由多个凸形图案之间的绝缘层和多个凸形图案上的绝缘层，并具有通孔。绝缘层封闭通孔并封闭空腔部分。

60. 发明授权

US07211497B2 Method for fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07211497B2
公开(公告)日：2007-05-01
申请号：US10695798
申请日：2003-10-30
申请人： Atsushi Hiraiwa , Satoshi Sakai , Dai Ishikawa , Yoshihiro Ikeda
发明人： Atsushi Hiraiwa , Satoshi Sakai , Dai Ishikawa , Yoshihiro Ikeda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28273 , H01L21/3105 , H01L21/823857 , H01L27/105 , H01L27/11521 , H01L27/11526 , H01L29/513 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.
摘要翻译：根据本发明，可以通过低温处理形成膜质量几乎等于热氧化物的氧化膜。在构成半导体晶片的基板的有源区域上去除绝缘体之后，通过低压CVD法在半导体晶片的主表面上沉积由例如氧化硅制成的绝缘体。该绝缘体是在后续步骤中形成MISFET的栅极绝缘体的膜。随后，按照箭头示意性地示出的方式，在含有氧的气氛（氧等离子体处理）中对绝缘体进行等离子体处理。通过这样做，通过CVD方法形成的绝缘体的膜质量可以提高到与由热氧化物形成的绝缘体几乎相同的程度。

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