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51. 发明授权

US07326604B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07326604B2
公开(公告)日：2008-02-05
申请号：US10765952
申请日：2004-01-29
申请人： Shunpei Yamazaki , Hisashi Ohtani , Akiharu Miyanaga , Toru Mitsuki , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Hisashi Ohtani , Akiharu Miyanaga , Toru Mitsuki , Takeshi Fukunaga
IPC分类号： H01L21/84
CPC分类号： H01L27/1222 , H01L27/1214 , H01L29/04 , H01L29/78609 , H01L29/78675 , H01L29/78696
摘要： In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain side to effectively prevent the short channel effect. Also, since a channel forming region 105 is intrinsic or substantially intrinsic, a high mobility is realized.
摘要翻译：在具有绝缘表面的衬底106上使用结晶半导体膜的半导体器件中，将杂质局部注入到有源区102中以形成钉扎区104。钉扎区域104抑制耗尽层从漏极侧的扩展，以有效地防止短沟道效应。此外，由于沟道形成区域105是固有的或基本上固有的，因此实现高迁移率。

52. 发明授权

US07307007B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07307007B2
公开(公告)日：2007-12-11
申请号：US11393764
申请日：2006-03-31
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
IPC分类号： H01L21/20
CPC分类号： H01L29/78603 , H01L21/02532 , H01L21/02672 , H01L21/3226 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78621
摘要： An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film 103 is flattened to form the under insulating layer 104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses 106a, 106b, 106d of the under insulating layer 104 is made 0.3 μm or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
摘要翻译：用于制造下绝缘层104的绝缘膜103形成在石英或半导体衬底100上。在绝缘膜103的表面上形成与基板100的凹部101a〜101d对应的凹部105a〜105d。该绝缘膜103的表面被平坦化以形成下绝缘层104。通过该平坦化处理，距离L 1，L 2，... 。。在下绝缘层104的凹部106a，106b，106d之间的Ln为0.3μm以上，各凹部的深度为10nm以下。下绝缘膜104的表面的均方根表面粗糙度为0.3nm以下。由此，在凹部106a，106b，106d中，可以避免阻挡半导体薄膜的晶体生长，并且晶粒边界可以基本消失。

53. 发明授权

US07256760B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07256760B2
公开(公告)日：2007-08-14
申请号：US09924337
申请日：2001-08-06
申请人： Shunpei Yamazaki , Jun Koyama , Hisashi Ohtani
发明人： Shunpei Yamazaki , Jun Koyama , Hisashi Ohtani
IPC分类号： G09G3/36 , G09G5/00 , G09G3/20
CPC分类号： G02F1/13454 , G09G3/3648 , G09G3/3677 , G09G3/3688 , G09G5/008 , G09G5/18 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , H01L27/1237 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/04 , H01L29/78696
摘要： A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and by designing a channel length and a film thickness of a gate insulating film of the TFT according to characteristics required by circuits, it is possible to form a high frequency driving circuit and a low frequency driving circuit on the same substrate.
摘要翻译：形成其中将像素矩阵电路，驱动电路和逻辑电路安装在同一衬底上的系统化有源矩阵显示器。本发明的TFT具有能够在0.05〜2GHz的宽驱动频率范围内工作的特征，并且通过根据TFT的栅极绝缘膜的通道长度和膜厚来设计TFT的栅极绝缘膜，电路，可以在同一基板上形成高频驱动电路和低频驱动电路。

54. 发明申请

US20070161164A1 Method of Manufacturing Semiconductor Device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070161164A1
公开(公告)日：2007-07-12
申请号：US11680660
申请日：2007-03-01
申请人： Shunpei Yamazaki , Hisashi Ohtani
发明人： Shunpei Yamazaki , Hisashi Ohtani
IPC分类号： H01L21/84 , H01L21/322
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/268 , H01L21/3221 , H01L21/3226 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing (RTA). By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the portion of the crystalline silicon film covered with the mask is also heated sufficiently and the catalyst element existing in this region moves to the phosphorus-implanted, amorphous portion having high gettering ability. As a result, the concentration of the catalyst element is reduced in the portion of the silicon film covered with the mask. A semiconductor device is manufactured by using this portion.
摘要翻译：在含有催化剂元素的结晶硅膜上选择性地形成掩模，并且形成非晶硅膜以覆盖掩模。将磷注入到非晶硅膜和未被掩模覆盖的晶体硅膜的部分。然后通过快速热退火（RTA）将硅膜加热。由于非晶硅膜的存在，结晶硅膜的温度均匀地增加，由掩模覆盖的结晶硅膜的部分也被充分加热，并且存在于该区域中的催化剂元素移动到磷 - 具有高吸气能力的无定形部分。结果，在被掩模覆盖的硅膜的部分中催化剂元素的浓度降低。通过使用该部分制造半导体器件。

55. 发明申请

US20070148925A1 Laser apparatus, laser annealing method, and manufacture method of a semiconductor device 有权
标题翻译：激光装置，激光退火方法以及半导体装置的制造方法
公开(公告)号：US20070148925A1
公开(公告)日：2007-06-28
申请号：US11707094
申请日：2007-02-16
申请人： Shunpei Yamazaki , Hisashi Ohtani , Koichiro Tanaka , Kenji Kasahara , Ritsuko Kawasaki
发明人： Shunpei Yamazaki , Hisashi Ohtani , Koichiro Tanaka , Kenji Kasahara , Ritsuko Kawasaki
IPC分类号： H01L21/84 , H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
摘要翻译：为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

56. 发明授权

US07166500B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07166500B2
公开(公告)日：2007-01-23
申请号：US10978462
申请日：2004-11-02
申请人： Shunpei Yamazaki , Hisashi Ohtani
发明人： Shunpei Yamazaki , Hisashi Ohtani
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L21/02672 , H01L21/2022 , H01L21/3221 , H01L21/3226 , H01L29/78675
摘要： In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.
摘要翻译：在制造半导体器件的方法中，在通过使用促进硅结晶的催化元素形成横向生长区域107之后，通过热处理将催化元素吸入添加磷的区域108中。此后，形成栅极绝缘膜113以覆盖形成的有源层110至112，并且在该状态下进行热氧化步骤。由此，可以在防止金属氧化物的异常生长的同时改善有源层与栅极绝缘膜之间的界面的特性。

57. 发明申请

US20060155413A1 Semiconductor fabricating apparatus 有权
公开(公告)号：US20060155413A1
公开(公告)日：2006-07-13
申请号：US11370009
申请日：2006-03-08
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： G06F19/00
CPC分类号： H01L21/02678 , B23K26/04 , B23K26/0604 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/1224 , B23K26/123 , B23K26/127 , H01L21/02683 , H01L21/2026
摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

58. 发明申请

US20060134840A1 Electro-optical device and semiconductor circuit 有权
公开(公告)号：US20060134840A1
公开(公告)日：2006-06-22
申请号：US11339671
申请日：2006-01-26
申请人： Hisashi Ohtani , Jun Koyama , Shunpei Yamazaki
发明人： Hisashi Ohtani , Jun Koyama , Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： G02B27/017 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/02672 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/78627 , H01L29/78684
摘要： A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base film and a semiconductor film are continuously formed on a quartz substrate without exposing to the air. After the semiconductor film is crystallized by using a catalytic element, the catalytic element is removed. In the TFT formed in such a process, fluctuation in electrical characteristics such as a threshold voltage and a subthreshold coefficient is extremely small. Thus, it is possible to form a circuit, such as a differential amplifier circuit, which is apt to receive an influence of characteristic fluctuation of a TFT.

59. 发明授权

US07026193B1 Method of manufacturing a semiconductor device having TFTs with uniform characteristics 失效
标题翻译：制造具有均匀特性的TFT的半导体器件的方法
公开(公告)号：US07026193B1
公开(公告)日：2006-04-11
申请号：US09455991
申请日：1999-12-06
申请人： Hisashi Ohtani , Jun Koyama , Yasushi Ogata , Shunpei Yamazaki
发明人： Hisashi Ohtani , Jun Koyama , Yasushi Ogata , Shunpei Yamazaki
IPC分类号： H01L21/84
CPC分类号： H01L27/1277 , G02F1/13454 , H01L27/1296 , H01L29/66757
摘要： In a circuit including at least one thin film transistor formed on an insulating substrate, a region 105 to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region 101 that forms the thin film transistor by a distance y, has a width w, and extends longitudinally over an end portion of the semiconductor island region 101 by a distance x. Also, in a TFT manufactured in a region which is not interposed between the nickel added regions, another nickel added region is disposed (resultantly, which is interposed between two nickel added regions). Further, all the intervals between the respective nickel added regions are preferably identified with each other. Thus, a thin film transistor circuit being capable of a high speed operation (in general, some tens of Mhz and more) is formed. In particular, correcting the difference of crystal growths, using a crystalline silicon film added with nickel, TFTs with uniform characteristics can be provided. Also, a crystal growth distance of a region where is not interposed between the nickel added regions can be sufficient.
摘要翻译：在包括形成在绝缘基板上的至少一个薄膜晶体管的电路中，添加了促进结晶性的金属元素的区域105与形成薄膜晶体管的半导体岛区域101分开距离为y，具有宽度w，并且在半导体岛区域101的端部上纵向延伸距离x。此外，在不在镍添加区域之间的区域中制造的TFT中，设置有另外的镍添加区域（结果，介于两个添加镍的区域之间）。此外，各个镍添加区域之间的所有间隔优选彼此识别。因此，形成能够进行高速运转（通常为几十Mhz以上）的薄膜晶体管电路。特别地，可以提供使用添加有镍的晶体硅膜，具有均匀特性的TFT来校正晶体生长的差异。此外，未添加在镍添加区域之间的区域的晶体生长距离可以是足够的。

60. 发明授权

US07023052B2 Semiconductor device having crystalline semiconductor layer 失效
标题翻译：具有晶体半导体层的半导体器件
公开(公告)号：US07023052B2
公开(公告)日：2006-04-04
申请号：US10024850
申请日：2001-12-18
申请人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Takeshi Fukunaga
IPC分类号： H01L31/0392
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/32055 , H01L21/321 , H01L21/3221 , H01L27/10873 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.
摘要翻译：提供了具有与MOSFET相当的性能的半导体器件。半导体器件的有源层由通过使用用于促进结晶的金属元素结晶的结晶硅膜形成，并且还在含有卤素元素的气氛中进行热处理以进行金属元素的吸杂。此过程之后的活性层由多个针状或柱状晶体的聚集构成。通过使用这种晶体结构制造的半导体器件具有非常高的性能。

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