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51. 发明授权

US08045300B2 Tunneling magnetic sensing element and method for producing same 有权
标题翻译：隧道磁传感元件及其制造方法
公开(公告)号：US08045300B2
公开(公告)日：2011-10-25
申请号：US12036513
申请日：2008-02-25
申请人： Kazumasa Nishimura , Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Yoshihiro Nishiyama , Ryo Nakabayashi , Hidekazu Kobayashi
发明人： Kazumasa Nishimura , Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Yoshihiro Nishiyama , Ryo Nakabayashi , Hidekazu Kobayashi
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , H01F10/3254 , H01F10/3295 , H01F41/302
摘要： A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.
摘要翻译：自由磁性层具有层叠结构，其中由Co-Fe或Fe组成的第一磁性子层和由Co-Fe-B或Fe-B组成的第二磁性子层依次形成在绝缘阻挡层上的Mg-O。与现有技术相比，这有效地提高了电阻变化率（＆Dgr; R / R）。

52. 发明授权

US07868543B2 Light-emitting device having openings in electrode 有权
标题翻译：在电极中具有开口的发光器件
公开(公告)号：US07868543B2
公开(公告)日：2011-01-11
申请号：US12230148
申请日：2008-08-25
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H01J1/62
CPC分类号： H01L51/5271 , H01L27/3246 , H01L27/3276 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5268 , H01L2251/5315
摘要： The invention provides a light-emitting device, a manufacturing method thereof, and an electronic apparatus which can improve the emission efficiency of light, obtain uniform brightness within a display surface in high reliability, in particular, and which can suppress lowering of the emission efficiency of light due to various wiring line structures, even though a large screen is performed. In a light-emitting device having a light-emitting element in which a first electrode on a base substrate, a functional layer having a light-emitting layer, and a second electrode are sequentially deposited, the first electrode and the second electrode are reflective, and the second electrode has an opening through which light from the light-emitting layer passes.
摘要翻译：本发明提供一种发光装置及其制造方法以及能够提高发光效率，特别是高可靠性地在显示面内获得均匀的亮度的电子设备，能够抑制发光效率的降低由于各种布线结构，即使执行了大屏幕。在具有基底基板上的第一电极，具有发光层的功能层和第二电极顺序地沉积的发光元件的发光器件中，第一电极和第二电极是反射性的，并且第二电极具有通过该开口，来自发光层的光通过该开口。

53. 发明授权

US07787221B2 Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers 有权
标题翻译：隧道磁感应元件包括磁性层之间的非磁性金属层
公开(公告)号：US07787221B2
公开(公告)日：2010-08-31
申请号：US11671756
申请日：2007-02-06
申请人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Yoshihiro Nishiyama , Hidekazu Kobayashi , Masamichi Saito , Naoya Hasegawa
发明人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Yoshihiro Nishiyama , Hidekazu Kobayashi , Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/08
摘要： A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.
摘要翻译：第一固定磁性子层4a具有多层结构，其包括设置在下铁磁共晶层与上部铁磁层之间的第一插入层。第一个插入次层具有超过3埃和6埃或更小的平均厚度。这导致层间耦合磁场Hin低于已知技术，而RA和电阻变化率（＆Dgr; R / R）与已知结构基本相同。

54. 发明授权

US07535169B2 Organic electroluminescent device, method for producing the same, and electronic appliance 失效
标题翻译：有机电致发光器件及其制造方法以及电子设备
公开(公告)号：US07535169B2
公开(公告)日：2009-05-19
申请号：US11046945
申请日：2005-02-01
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H05B33/04 , H05B33/10 , H01J9/00
CPC分类号： H01L27/3246 , H01L51/0005 , H01L51/56
摘要： To provide an organic electroluminescent device that has a uniform brightness distribution and inhibits parasitic capacitance occurring between switching elements, such as thin-film transistors, and a cathode to achieve good display characteristics, a method for producing the organic electroluminescent device, and an electronic appliance. An organic electroluminescent device includes a substrate, scanning lines formed on the substrate, signal lines formed on the substrate, switching elements formed near the intersections of the scanning lines and the signal lines, light-emitting functional layers that emit light according to the operation of the switching elements, a first insulating layer formed between the light-emitting functional layers, a second insulating layer formed between the light-emitting functional layers, and a lyophobic thin film covering the first and second insulating layers. The second insulating layer is not in contact with the light-emitting functional layers. The position of the second insulating layer at least corresponds to the positions of the scanning lines, the signal lines, and the switching elements.
摘要翻译：为了提供具有均匀的亮度分布并抑制诸如薄膜晶体管等的开关元件和阴极之间发生的寄生电容以实现良好的显示特性的有机电致发光器件，制造有机电致发光器件的方法和电子设备。一种有机电致发光器件，包括基板，形成在基板上的扫描线，形成在基板上的信号线，形成在扫描线和信号线的交点附近的开关元件，发光功能层，根据开关元件，形成在发光功能层之间的第一绝缘层，形成在发光功能层之间的第二绝缘层和覆盖第一绝缘层和第二绝缘层的疏液薄膜。第二绝缘层不与发光功能层接触。第二绝缘层的位置至少对应于扫描线，信号线和开关元件的位置。

55. 发明申请

US20090115551A1 Noise filter 有权
标题翻译：噪声滤波器
公开(公告)号：US20090115551A1
公开(公告)日：2009-05-07
申请号：US11990560
申请日：2006-08-11
申请人： Hidekazu Kobayashi , Yasuhiko Nishioka , Minoru Sasaki , Seigen Maeno
发明人： Hidekazu Kobayashi , Yasuhiko Nishioka , Minoru Sasaki , Seigen Maeno
IPC分类号： H03H7/01 , H01F27/06
CPC分类号： H01F17/045 , H01F27/02 , H01F27/04 , H01F27/06 , H01F2017/065 , H03H2001/0092
摘要： The invention can provide a miniaturized noise filter. The noise filter for reducing noise comprises a coil with a conductive wire (2) wound around a core (1); a case (6) formed of an insulating material receiving the coil; a bracket (8) of a magnetic material forming a flux path of magnetic flux generated from the coil, which places the case thereon, which has a pair of end plates (12a, 12b) disposed opposite to both ends of the core of the coil respectively through a gap of a predetermined distance, and which has a bottom plate (8a) disposed between the pair of the end plates; and an input/output terminal (3a, 3b) for the coil.
摘要翻译：本发明可以提供一种小型噪声滤波器。用于降低噪声的噪声滤波器包括具有缠绕在芯（1）上的导线（2）的线圈; 由接收线圈的绝缘材料形成的壳体（6）形成从线圈产生的磁通量通量的磁性材料的支架（8），该磁通量放置在其上的壳体，其具有与线圈的芯的两端相对设置的一对端板（12a，12b）分别通过预定距离的间隙，并且具有设置在所述一对端板之间的底板（8a）以及用于线圈的输入/输出端子（3a，3b）。

56. 发明申请

US20080315761A1 Light-emitting device having openings in electrode 有权
标题翻译：在电极中具有开口的发光器件
公开(公告)号：US20080315761A1
公开(公告)日：2008-12-25
申请号：US12230148
申请日：2008-08-25
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H01J1/63
CPC分类号： H01L51/5271 , H01L27/3246 , H01L27/3276 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5268 , H01L2251/5315
摘要： The invention provides a light-emitting device, a manufacturing method thereof, and an electronic apparatus which can improve the emission efficiency of light, obtain uniform brightness within a display surface in high reliability, in particular, and which can suppress lowering of the emission efficiency of light due to various wiring line structures, even though a large screen is performed. In a light-emitting device having a light-emitting element in which a first electrode on a base substrate, a functional layer having a light-emitting layer, and a second electrode are sequentially deposited, the first electrode and the second electrode are reflective, and the second electrode has an opening through which light from the light-emitting layer passes.
摘要翻译：本发明提供一种发光装置及其制造方法以及能够提高发光效率，特别是高可靠性地在显示面内获得均匀的亮度的电子设备，能够抑制发光效率的降低由于各种布线结构，即使执行了大屏幕。在具有基底基板上的第一电极，具有发光层的功能层和第二电极顺序地沉积的发光元件的发光器件中，第一电极和第二电极是反射性的，并且第二电极具有通过该开口，来自发光层的光通过该开口。

57. 发明申请

US20080278863A1 TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：隧道式磁感应元件及其制造方法
公开(公告)号：US20080278863A1
公开(公告)日：2008-11-13
申请号：US12118354
申请日：2008-05-09
申请人： Kazumasa Nishimura , Masamichi Saito , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3967 , H01L43/08 , H01L43/12
摘要： A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic field. The pinned magnetic layer, the insulating barrier layer and the free magnetic layer are deposited in the named order. A first protective layer composed of a platinum-group element is disposed on the free magnetic layer, and a second protective layer composed of Ti is disposed on the first protective layer.
摘要翻译：隧道磁传感元件包括：一个钉扎磁性层，其磁化方向被固定在一个方向上; 绝缘阻挡层; 以及其磁化方向响应于外部磁场而变化的自由磁性层。钉扎磁性层，绝缘阻挡层和自由磁性层以指定的顺序沉积。在自由磁性层上设置由铂族元素构成的第一保护层，在第一保护层上设置由Ti构成的第二保护层。

58. 发明授权

US07427832B2 Organic electroluminescence device and manufacturing method therefor 有权
公开(公告)号：US07427832B2
公开(公告)日：2008-09-23
申请号：US11032198
申请日：2005-01-11
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H05B33/00
CPC分类号： H05B33/14 , H01L27/3244 , H01L27/3281 , H01L51/5212 , H01L51/524 , H01L51/5284 , H01L2251/5315 , H01L2251/5353
摘要： An organic EL device in accordance with the invention has a structure in which a first electrode, a light-emitting layer, and a second electrode are formed on a substrate in this order, and light from the light-emitting layer is emitted to an exterior of the device via the second electrode.

59. 发明申请

US20080218913A1 TUNNELING MAGNETORESISTIVE ELEMENT WHICH INCLUDES Mg-O BARRIER LAYER AND IN WHICH NONMAGNETIC METAL SUBLAYER IS DISPOSED IN ONE OF MAGNETIC LAYERS 有权
标题翻译：包括Mg-O阻挡层和非磁性金属层的磁性元素在磁性层之一中处理
公开(公告)号：US20080218913A1
公开(公告)日：2008-09-11
申请号：US12042585
申请日：2008-03-05
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , H01L43/08
摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
摘要翻译：在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。非磁性金属子层的平均厚度为约1埃以上且约5以下。

60. 发明申请

US20080186638A1 TUNNELING MAGNETIC SENSING ELEMENT HAVING FREE MAGNETIC LAYER INSERTED WITH NONMAGNETIC METAL LAYERS 审中-公开
标题翻译：具有非金属金属层的无磁层的隧道式磁感应元件
公开(公告)号：US20080186638A1
公开(公告)日：2008-08-07
申请号：US12026329
申请日：2008-02-05
申请人： Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Yoshihiro Nishiyama , Yosuke Ide , Masamichi Saito , Naoya Hasegawa
发明人： Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Yoshihiro Nishiyama , Yosuke Ide , Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08
摘要： A tunneling magnetic sensing element includes a free magnetic layer disposed on an insulating barrier layer, the free magnetic layer including an enhancement layer, a first soft magnetic layer, a first nonmagnetic metal layer, a second soft magnetic layer, a second nonmagnetic metal layer, and a third soft magnetic layer disposed in that order from the bottom. The enhancement layer is, for example, composed of Co—Fe, each of the soft magnetic layers is, for example, composed of Ni—Fe, and each of the nonmagnetic metal layers is, for example, composed of Ta. Consequently, it is possible to stably obtain a high rate of change in resistance (ΔR/R) compared with the known art.
摘要翻译：隧道磁传感元件包括设置在绝缘阻挡层上的自由磁性层，所述自由磁性层包括增强层，第一软磁层，第一非磁性金属层，第二软磁层，第二非磁性金属层，以及从底部依次设置的第三软磁性层。增强层例如由Co-Fe构成，各软磁层例如由Ni-Fe构成，各非磁性金属层例如由Ta构成。因此，与现有技术相比，可以稳定地获得高电阻变化率（DeltaR / R）。

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