专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US06921556B2 Method of film deposition using single-wafer-processing type CVD 有权
标题翻译：使用单晶片处理型CVD的薄膜沉积方法
公开(公告)号：US06921556B2
公开(公告)日：2005-07-26
申请号：US10403179
申请日：2003-03-28
申请人： Akira Shimizu , Hideaki Fukuda , Baiei Kawano , Kazuo Sato
发明人： Akira Shimizu , Hideaki Fukuda , Baiei Kawano , Kazuo Sato
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , H01L21/285 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4409 , C23C16/4412 , C23C16/4557 , C23C16/45572 , C23C16/4585 , C23C16/54
摘要： A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.
摘要翻译：使用单晶片处理型CVD装置的成膜方法包括：（a）当基座升高时，密封基座的周边以将反应室与晶片处理室分离; 和（b）通过在膜沉积期间通过基座上的晶片的背侧和周边形成的至少一个排出孔，将气体从晶片处理室流入反应室。

52. 发明申请

US20050098111A1 Apparatus for single-wafer-processing type CVD 审中-公开
标题翻译：单晶片处理型CVD装置
公开(公告)号：US20050098111A1
公开(公告)日：2005-05-12
申请号：US11014437
申请日：2004-12-16
申请人： Akira Shimizu , Hideaki Fukuda , Baiei Kawano , Kazuo Sato
发明人： Akira Shimizu , Hideaki Fukuda , Baiei Kawano , Kazuo Sato
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , H01L21/285 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4409 , C23C16/4412 , C23C16/4557 , C23C16/45572 , C23C16/4585 , C23C16/54
摘要： A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.
摘要翻译：单晶加工型CVD装置包括：（a）反应室，包括：（i）基座，具有至少一个气体排出孔，用于将气体经由晶片的背面和周边流入反应室，进入反应室; （ii）喷头; （iii）位于喷头附近并沿着反应室的内壁圆周设置的排气管道; 和（iv）与排气管道同轴设置的与排气管道的底部形成间隙的圆形分离板; 和（b）用于调节喷头温度的温度控制装置。分离板具有密封部分，以密封基座的周边，并且当基座上升时将反应室与晶片处理室分开。

53. 发明申请

US20050022737A1 Semiconductor-processing apparatus provided with susceptor and placing block 有权
标题翻译：设有基座和放置块的半导体处理设备
公开(公告)号：US20050022737A1
公开(公告)日：2005-02-03
申请号：US10897061
申请日：2004-07-22
申请人： Akira Shimizu , Hideaki Fukuda , Hiroki Arai , Baiei Kawano , Takayuki Yamagishi
发明人： Akira Shimizu , Hideaki Fukuda , Hiroki Arai , Baiei Kawano , Takayuki Yamagishi
IPC分类号： H01L21/683 , C23C16/00 , C23C16/458 , H01L21/205 , H01L21/677 , H01L21/68
CPC分类号： C23C16/4585
摘要： A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.
摘要翻译：半导体处理装置包括基座和可拆卸地放置在基座周边的可拆卸放置块，用于传送基板。提供可伸缩的支撑构件用于将放置块从基座分离/附接到基座。

54. 发明授权

US06439154B2 Plasma processing apparatus for semiconductors 失效
标题翻译：半导体等离子体处理装置
公开(公告)号：US06439154B2
公开(公告)日：2002-08-27
申请号：US09181147
申请日：1998-10-27
申请人： Hideaki Fukuda , Baiei Kono
发明人： Hideaki Fukuda , Baiei Kono
IPC分类号： C23C16509
CPC分类号： H01J37/32082 , H01J37/321
摘要： There is provided an inductively coupled plasma processing apparatus for generating uniform and stable plasma at a high density. The plasma processing apparatus for semiconductors for processing an object to be processed utilizing plasma comprises an evacuated reaction chamber for processing the object to be processed therein, an antenna formed by a plurality of linear conductors provided in the reaction chamber and an RF power supply connected to one end of the plurality of linear conductors. The antenna is formed by at least three linear conductors disposed such that they radially extend from the center of the antenna at equal intervals from each other, and each of the linear conductors is connected to the ground at one end thereof and is connected to the RF power supply at the other end. An insulating process is provided on the surface of the linear conductors of said antenna. The plasma processing apparatus for semiconductors according to the invention further comprises an electromagnet for generating a magnetic field in a direction orthogonal to an induced electrical field.
摘要翻译：提供了一种用于以高密度产生均匀和稳定的等离子体的电感耦合等离子体处理装置。用于使用等离子体处理待处理物体的半导体等离子体处理装置包括用于处理待处理物体的真空反应室，由设置在反应室中的多个线性导体形成的天线和连接到多个线性导体的一端。天线由至少三根线性导体形成，这些线性导体设置成使得它们彼此等间隔从天线的中心径向延伸，并且每个线性导体在其一端连接到地，并连接到RF 电源在另一端。在所述天线的线性导体的表面上提供绝缘处理。根据本发明的用于半导体的等离子体处理装置还包括用于在与感应电场正交的方向上产生磁场的电磁体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式