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    • 52. 发明授权
    • Method of manufacturing a mold for press forming employing an evaporative pattern
    • 使用蒸发图案制造压制成形用模具的方法
    • US08967229B2
    • 2015-03-03
    • US13878247
    • 2011-01-28
    • Susumu OkabeMasanori SatoMasashi TakahashiTsuyoshi Nanba
    • Susumu OkabeMasanori SatoMasashi TakahashiTsuyoshi Nanba
    • B22C9/02B22C15/00B22C9/04B22C7/02B22C9/18B22D25/02
    • B22C9/046B22C7/026B22C9/18B22D25/02Y10T29/49826
    • An evaporative pattern casting method is taught which does not reduce accuracy of an evaporative pattern.The evaporative pattern casting method comprises a part manufacturing process (S2), an assembly process (S4), a sand mold manufacturing process (S6), a molten metal pouring process (S8) and a sand removal process (S12). In the part manufacturing process, the evaporative pattern is manufactured as a plurality of separate parts. In the assembly process, the parts are assembled on a work plane. In the sand mold manufacturing process, the evaporative pattern is covered with sand to form a sand mold without moving the assembled evaporative pattern from the work plane. In the molten metal pouring process, molten metal is poured into the sand mold. In the sand removal process, the sand is removed after the molten metal has solidified. According to this casting method, the sand mold is formed without moving the assembled evaporative pattern from the work plane, and consequently the accuracy of the dimensions at the time of assembly can be maintained.
    • 教导了不降低蒸发图案的精度的蒸发图案铸造方法。 蒸发图案铸造方法包括零件制造工艺(S2),组装工艺(S4),砂模制造工艺(S6),熔融金属浇注工艺(S8)和除砂工艺(S12)。 在部件制造过程中,蒸发图案被制造为多个分开的部件。 在组装过程中,零件被组装在工作平面上。 在砂模制造过程中,蒸发图案用砂覆盖以形成砂模,而不将组装的蒸发图案从工作平面移动。 在熔融金属浇注过程中,将熔融金属倒入砂模中。 在除砂过程中,在熔融金属固化后除去砂。 根据该铸造方法,形成砂模,而不将组装的蒸发图案从工作平面移动,因此可以保持组装时的尺寸精度。
    • 55. 发明申请
    • EVAPORATIVE PATTERN FOR MANUFACTURING A MOLD FOR PRESS FORMING
    • 用于制造用于压制成型的模具的蒸发图案
    • US20130292080A1
    • 2013-11-07
    • US13878247
    • 2011-01-28
    • Susumu OkabeMasanori SatoMasashi TakahashiTsuyoshi Nanba
    • Susumu OkabeMasanori SatoMasashi TakahashiTsuyoshi Nanba
    • B22C9/04
    • B22C9/046B22C7/026B22C9/18B22D25/02Y10T29/49826
    • An evaporative pattern casting method is taught which does not reduce accuracy of an evaporative pattern.The evaporative pattern casting method comprises a part manufacturing process (S2), an assembly process (S4), a sand mold manufacturing process (S6), a molten metal pouring process (S8) and a sand removal process (S12). In the part manufacturing process, the evaporative pattern is manufactured as a plurality of separate parts. In the assembly process, the parts are assembled on a work plane. In the sand mold manufacturing process, the evaporative pattern is covered with sand to form a sand mold without moving the assembled evaporative pattern from the work plane. In the molten metal pouring process, molten metal is poured into the sand mold. In the sand removal process, the sand is removed after the molten metal has solidified. According to this casting method, the sand mold is formed without moving the assembled evaporative pattern from the work plane, and consequently the accuracy of the dimensions at the time of assembly can be maintained.
    • 教导了不降低蒸发图案的精度的蒸发图案铸造方法。 蒸发图案铸造方法包括零件制造工艺(S2),组装工艺(S4),砂模制造工艺(S6),熔融金属浇注工艺(S8)和除砂工艺(S12)。 在部件制造过程中,蒸发图案被制造为多个分开的部件。 在组装过程中,零件被组装在工作平面上。 在砂模制造过程中,蒸发图案用砂覆盖以形成砂模,而不将组装的蒸发图案从工作平面移动。 在熔融金属浇注过程中,将熔融金属倒入砂模中。 在除砂过程中,在熔融金属固化后除去砂。 根据该铸造方法,形成砂模,而不将组装的蒸发图案从工作平面移动,因此可以保持组装时的尺寸精度。
    • 56. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US08399351B2
    • 2013-03-19
    • US12659600
    • 2010-03-15
    • Masashi Takahashi
    • Masashi Takahashi
    • H01L21/4763
    • H01L21/76877H01L21/28556
    • A semiconductor device manufacturing method includes a process for filling holes in a dielectric film with tungsten. The process deposits tungsten in the holes, partially etches the deposited tungsten, and then deposits additional tungsten in the holes. Voids that may be left by the first tungsten deposition step are made accessible by openings formed in the etching step, and are then filled in by the second tungsten deposition step. Tungsten hexafluoride may be used as both a deposition source gas and an etching gas, providing a simple and inexpensive process that is suitable for high-volume production.
    • 半导体器件制造方法包括用钨填充电介质膜中的孔的工艺。 该过程在孔中沉积钨,部分蚀刻沉积的钨,然后在孔中沉积额外的钨。 可以通过第一钨沉积步骤留下的空隙使得可以通过在蚀刻步骤中形成的开口来访问,然后通过第二钨沉积步骤填充。 六氟化钨可用作沉积源气体和蚀刻气体,提供适合于大批量生产的简单且便宜的方法。