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51. 发明授权

US06742794B2 Steering damper system 失效
标题翻译：方向阻尼系统
公开(公告)号：US06742794B2
公开(公告)日：2004-06-01
申请号：US10321696
申请日：2002-12-18
申请人： Osamu Bunya , Takehiko Nanri , Kanji Hayashi , Takeshi Wakabayashi
发明人： Osamu Bunya , Takehiko Nanri , Kanji Hayashi , Takeshi Wakabayashi
IPC分类号： B62K2112
CPC分类号： F16F9/466 , B62K21/08 , F16F9/125
摘要： A liquid pressure type steering damper system for generating a damping force for preventing a handle from being swung due to a kick-back upon a disturbance wherein the generation of the damping force is nonlinear so that the steering angle would not be enlarged so much even if the kick-back becomes greater. A liquid pressure type steering damper is provided with a restriction passage for a working liquid and a solenoid-type control valve for varying the passage sectional area of the restriction passage. A needle portion is formed at the tip end of a plunger constituting the solenoid valve and is made to advance and retract in a restriction portion connected to a bypass passage. An annular gap passage is formed between the needle portion and the inside wall of the restriction portion so that, when the needle portion advances or retracts in proportion to the steering speed of a front wheel steering system, the clearance area of the gap passage is varied in the manner of a quadric curve in relation to the stroke amount of the needle portion, whereby the generation of the damping force is rapidly increased in the manner of a quadric curve. In addition, an upper limit of the damping force is restricted by an electromagnetic force of the solenoid valve.
摘要翻译：一种用于产生阻尼力的液压式转向阻尼器系统，其中阻尼力的产生由于阻尼力的产生而导致的防止手柄摆动，因此阻尼力的产生是非线性的，使得即使反弹变得更大。液压式转向阻尼器设置有用于工作液体的限制通道和用于改变限制通道的通道截面面积的螺线管式控制阀。在构成电磁阀的柱塞的前端形成有针部，并且在与旁通通路连接的限制部中前进和后退。在针部和限制部的内壁之间形成环状的间隙通路，使得当针部与前轮转向系统的转向速度成比例地前进或后退时，间隙通道的间隙区域变化以相对于针部的行程量的二次曲线的方式，以二次曲线的方式快速地增加阻尼力的产生。此外，阻尼力的上限受到电磁阀的电磁力的限制。

52. 发明授权

US06603191B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06603191B2
公开(公告)日：2003-08-05
申请号：US09858230
申请日：2001-05-15
申请人： Takeshi Wakabayashi , Osamu Kuwabara
发明人： Takeshi Wakabayashi , Osamu Kuwabara
IPC分类号： H01L23544
CPC分类号： H01L21/568 , H01L21/56 , H01L21/561 , H01L21/6836 , H01L23/3107 , H01L24/11 , H01L24/12 , H01L24/27 , H01L24/94 , H01L24/97 , H01L2221/68327 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2224/274 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00
摘要： The back surface of a semiconductor wafer having a plurality of chip-forming regions each provided with a plurality of connection pads on the surface is bonded to a dicing tape, followed by fully cutting the semiconductor wafer along a cut line so as to form a cutting groove. Then, a front side protective film is formed on the front surface. The front side protective film has an open portion exposing the central portion of the connection pad, and is filled in the cutting groove. After formation of a columnar electrode connected to the connection pad via a wiring, a sealing film is formed on the front side protective film. Further, the cutting groove filled with the front side protective film is cut in substantially the center in the width direction, followed by peeling off the dicing tape so as to form individual semiconductor devices each forming a chip.
摘要翻译：具有多个芯片形成区域的半导体晶片的背面，每个芯片形成区域在表面上设置有多个连接焊盘，接合到切割带上，然后沿切割线完全切割半导体晶片，以形成切割槽。然后，在前表面上形成前侧保护膜。前侧保护膜具有暴露连接垫的中心部分的开放部分，并且被填充在切割槽中。在通过布线形成连接到连接焊盘的柱状电极之后，在前侧保护膜上形成密封膜。此外，填充有前侧保护膜的切割槽在宽度方向上基本上被切割成中心，然后剥离切割带，从而形成各自形成芯片的各个半导体器件。

53. 发明授权

US06545354B1 Semiconductor device having a barrier layer 有权
标题翻译：具有阻挡层的半导体器件
公开(公告)号：US06545354B1
公开(公告)日：2003-04-08
申请号：US09499599
申请日：2000-02-07
申请人： Yutaki Aoki , Ichiro Mihara , Takeshi Wakabayashi , Katsumi Watanabe
发明人： Yutaki Aoki , Ichiro Mihara , Takeshi Wakabayashi , Katsumi Watanabe
IPC分类号： H01L2940
CPC分类号： H01L23/3114 , H01L23/5223 , H01L23/5225 , H01L23/5227 , H01L23/5228 , H01L23/525 , H01L2924/0002 , H01L2924/1423 , H01L2924/19041 , H01L2924/00
摘要： In a semiconductor device such as a CSP, re-wiring is provided on a circuit element formation region of a semiconductor substrate and a columnar electrode for connection with a circuit board is provided on the re-wiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film on the circuit element formation region. A re-wiring is provided over the ground potential layer with a second insulating film interposed. Since the ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region, it is possible to eliminate crosstalk between the re-wiring and a circuit within the circuit element formation region and to freely position the re-wiring without restrictions.
摘要翻译：在诸如CSP的半导体器件中，在半导体衬底的电路元件形成区域上设置再布线，并且在重新布线上设置用于与电路板连接的柱状电极。在除了连接焊盘之外的半导体衬底上设置第一绝缘膜，并且在电路元件形成区域上的第一绝缘膜的上表面上设置连接到接地电位的接地电位层。在地电位层上提供再布线，其中插入有第二绝缘膜。由于接地电位层用作防止再布线和电路元件形成区域之间的串扰的阻挡层，因此可以消除电路元件形成区域内的再布线与电路之间的串扰，并且可以自由地定位re 接线无限制

54. 外观设计

USD464369S1 Toner cartridge 失效
公开(公告)号：USD464369S1
公开(公告)日：2002-10-15
申请号：US29150151
申请日：2001-11-09
申请人： Hisashi Kunihiro , Hiroshi Tanisawa , Takeshi Wakabayashi , Hiroshi Kawahito , Fumito Mizoguchi , Hiroshi Kubota
设计人： Hisashi Kunihiro , Hiroshi Tanisawa , Takeshi Wakabayashi , Hiroshi Kawahito , Fumito Mizoguchi , Hiroshi Kubota

55. 发明授权

US6014152A Control device 失效
标题翻译：控制装置
公开(公告)号：US6014152A
公开(公告)日：2000-01-11
申请号：US859260
申请日：1997-05-20
申请人： Hiroyuki Yamamoto , Takeshi Wakabayashi , Yoshihisa Nakagawa
发明人： Hiroyuki Yamamoto , Takeshi Wakabayashi , Yoshihisa Nakagawa
IPC分类号： G04G15/00 , G05B19/10 , H01H1/58 , H01H9/16 , H05K5/00 , G09G5/00
CPC分类号： G04G15/00 , G05B19/108 , H01H9/167 , H05K5/0017 , G05B2219/23185 , G05B2219/25119 , H01H1/5805 , H01H2239/03 , Y10S345/905
摘要： A control device with improved connection between display device and printed circuit board assembly, and improved key switches having beveled keytops. Further, the control device is configured to display the mode of internal manual switches without directly accessing the internal manual switches.
摘要翻译：具有改进的显示装置和印刷电路板组件之间的连接的控制装置，以及具有斜面键盘的改进的键开关。此外，控制装置被配置为在不直接访问内部手动开关的情况下显示内部手动开关的模式。

56. 发明授权

US5705856A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5705856A
公开(公告)日：1998-01-06
申请号：US623990
申请日：1996-03-29
申请人： Takeshi Wakabayashi
发明人： Takeshi Wakabayashi
IPC分类号： H01L21/60 , H01L23/29 , H01L23/31 , H01L23/485 , H01L23/48 , H01L23/52
CPC分类号： H01L23/3171 , H01L23/293 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/50 , H01L2224/1147 , H01L2224/13099 , H01L2224/131 , H01L2224/13144 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12044 , H01L2924/14
摘要： A semiconductor device has a connection electrode and protective film formed of organic material and covering the connection electrode. An opening is formed in the protective film to expose the connection electrode. A natural oxide layer is etched by argon-based dry etching. The surface layer of the protective film is altered to reduce the insulativity in the dry etching process. After a projection electrode is formed on the connection electrode later, the altered surface layer of the protective film is removed by oxygen-based dry etching. As no altered surface layer remain on the protective film, an adverse affect such as inadequate insulation does not occur.
摘要翻译：半导体器件具有连接电极和由有机材料形成并覆盖连接电极的保护膜。在保护膜中形成开口以露出连接电极。通过氩基干蚀刻蚀刻天然氧化物层。改变保护膜的表面层以降低干蚀刻工艺中的绝缘性。在稍后在连接电极上形成突起电极之后，通过氧基干蚀刻去除保护膜的改变的表面层。由于保护膜上没有保留改变的表面层，不会发生绝缘不良等不良影响。

57. 发明授权

US5631673A Control device 失效
标题翻译：控制装置
公开(公告)号：US5631673A
公开(公告)日：1997-05-20
申请号：US169137
申请日：1993-12-20
申请人： Hiroyuki Yamamoto , Takeshi Wakabayashi , Yoshihisa Nakagawa
发明人： Hiroyuki Yamamoto , Takeshi Wakabayashi , Yoshihisa Nakagawa
IPC分类号： G04G15/00 , G05B19/10 , H01H1/58 , H01H9/16 , H05K5/00 , G09G5/00
CPC分类号： G04G15/00 , G05B19/108 , H01H9/167 , H05K5/0017 , G05B2219/23185 , G05B2219/25119 , H01H1/5805 , H01H2239/03 , Y10S345/905
摘要： A control device with improved connection between display device and printed circuit board assembly, and improved key switches having beveled keytops. Further, the control device is configured to display the mode of internal manual switches without directly accessing the internal manual switches.
摘要翻译：具有改进的显示装置和印刷电路板组件之间的连接的控制装置，以及具有斜面键盘的改进的键开关。此外，控制装置被配置为在不直接访问内部手动开关的情况下显示内部手动开关的模式。

58. 发明授权

US5108950A Method for forming a bump electrode for a semiconductor device 失效
标题翻译：用于形成半导体器件的保护电极的方法
公开(公告)号：US5108950A
公开(公告)日：1992-04-28
申请号：US617399
申请日：1990-11-20
申请人： Takeshi Wakabayashi , Akira Suzuki , Shigeru Yokoyama
发明人： Takeshi Wakabayashi , Akira Suzuki , Shigeru Yokoyama
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L24/12 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/13019 , H01L2224/13099 , H01L24/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/19041 , Y10S148/131
摘要： A bump electrode structure of a semiconductor device comprises an electrode pad formed of an aluminum alloy, an insulating oxide layer covering only the peripheral edge portion of the electrode pad, an under-bump layer formed of an alloy of titanium and tungsten, and a bump electrode formed of gold. The titanium-tungsten alloy functions both as a barrier metal and as a bonding metal. The bump electrode rises substantially straight from the bonding surface of the under-bump layer, and its top portion has an area only substantially equal to that of the electrode pad. Fine V-shaped grooves are formed on the top surface of the bump electrode by anisotropic etching. Thus, the semiconductor device with fine electrode pad pitches is provided with a high-reliability bump electrode structure which ensures sufficient bonding strength between internal and external electrodes.
摘要翻译：半导体器件的突起电极结构包括由铝合金形成的电极焊盘（13），仅覆盖电极焊盘（13）的周缘部分的绝缘氧化物层（14），凸块下部（15）由钛和钨的合金形成，以及由金形成的凸块电极（16）。钛钨合金既用作阻挡金属又用作接合金属。突起电极（16）从下凸块层（15）的接合表面基本上直线上升，并且其顶部部分具有仅与电极焊盘（13）的面积大致相等的面积。通过各向异性蚀刻在凸块电极（16）的顶表面上形成细的V形槽（17）。因此，具有精细电极焊盘间距的半导体器件设置有高可靠性的凸起电极结构，其确保内部和外部电极之间的充分的接合强度。

59. 发明授权

US4395334A Treatment of waste water in non-evaporating dehydration of low grade coal 失效
标题翻译：在低等级煤的非蒸发脱水中处理废水
公开(公告)号：US4395334A
公开(公告)日：1983-07-26
申请号：US362605
申请日：1982-03-29
申请人： Yasuyuki Nakabayashi , Yoshio Matsuura , Michio Kurihara , Takao Kamei , Akira Nakamura , Keiichi Komai , Akira Shimotamari , Takeshi Wakabayashi
发明人： Yasuyuki Nakabayashi , Yoshio Matsuura , Michio Kurihara , Takao Kamei , Akira Nakamura , Keiichi Komai , Akira Shimotamari , Takeshi Wakabayashi
IPC分类号： C02F1/28 , C10F5/00 , B01D15/00 , F26B7/00
CPC分类号： C10F5/00 , C02F1/283
摘要： In a non-evaporating dehydration of brown coal, the coal is crushed and classified into lumps and fine particles. The lumps of coal are subjected to a non-evaporating dehydration in which waste water is produced. The waste water is contacted with the fine particles of coal so that components which affect the COD value of the water are absorbed by the coal particles. The coal particles are then burnt to produce saturated steam which is used in the non-evaporating dehydration.
摘要翻译：在褐煤的非蒸发脱水中，煤被粉碎并分成块状和细颗粒。煤块经受非蒸发脱水，其中产生废水。废水与煤的细颗粒接触，使得影响水的COD值的组分被煤颗粒吸收。然后将煤颗粒燃烧以产生用于非蒸发脱水的饱和蒸汽。

60. 发明授权

US08525335B2 Semiconductor construct and manufacturing method thereof as well as semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08525335B2
公开(公告)日：2013-09-03
申请号：US12828492
申请日：2010-07-01
申请人： Shinji Wakisaka , Takeshi Wakabayashi
发明人： Shinji Wakisaka , Takeshi Wakabayashi
IPC分类号： H01L23/48 , H01L23/485
CPC分类号： H01L24/49 , H01L21/561 , H01L21/6835 , H01L23/28 , H01L23/3114 , H01L23/3128 , H01L23/49838 , H01L23/50 , H01L23/525 , H01L23/5389 , H01L24/09 , H01L24/14 , H01L24/19 , H01L24/27 , H01L24/28 , H01L24/29 , H01L24/48 , H01L24/83 , H01L24/97 , H01L2224/04042 , H01L2224/04105 , H01L2224/05599 , H01L2224/12105 , H01L2224/20 , H01L2224/274 , H01L2224/2919 , H01L2224/48151 , H01L2224/48491 , H01L2224/49 , H01L2224/73267 , H01L2224/83191 , H01L2224/83855 , H01L2224/83856 , H01L2224/85399 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/15173 , H01L2924/15311 , H01L2924/19043 , H01L2224/82 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/214
摘要： A semiconductor construct includes a semiconductor substrate and connection pads provided on the semiconductor substrate. Some of the connection pads are connected to a common wiring and at least one of the remaining of the connection pads are connected to a wiring. The construct also includes a first columnar electrode provided to be connected to the common wiring and a second columnar electrode provided to be connected to a connection pad portion of the wiring.

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