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51. 发明申请

US20120049322A1 Cylindrical Embedded Capacitors 有权
标题翻译：圆柱嵌入式电容器
公开(公告)号：US20120049322A1
公开(公告)日：2012-03-01
申请号：US12873931
申请日：2010-09-01
申请人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wei-Chih Chiou , Shin-Puu Jeng
发明人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wei-Chih Chiou , Shin-Puu Jeng
IPC分类号： H01L29/92 , H01L21/768
CPC分类号： H01L28/40 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/14 , H01L28/92 , H01L2224/0401 , H01L2224/05008 , H01L2224/0557 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/1403 , H01L2224/14181 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.
摘要翻译：一种装置包括具有与前表面相对的前表面和后表面的基底。电容器形成在衬底中，并包括第一电容器板; 围绕所述第一电容器板的第一绝缘层; 以及环绕所述第一绝缘层的第二电容器板。第一电容器板，第一绝缘层和第二电容器板中的每一个从衬底的前表面延伸到后表面。

52. 发明申请

US20090219524A1 METHOD AND APPARATUS FOR CONTROLLED RAMAN SPECTROMETER 审中-公开
标题翻译：控制拉曼光谱仪的方法与装置
公开(公告)号：US20090219524A1
公开(公告)日：2009-09-03
申请号：US12040838
申请日：2008-02-29
申请人： Tzu-Yu Wang , Paul E. Bauhahn , Jerome P. Drexler
发明人： Tzu-Yu Wang , Paul E. Bauhahn , Jerome P. Drexler
IPC分类号： G01J3/44
CPC分类号： G01J3/4412 , G01J3/0264 , G01J3/027 , G01J3/0297 , G01J3/28
摘要： One embodiments includes a method that includes enabling an excitation laser during an excitation period, after a timed delay following the first excitation period, monitoring a photon scattering caused by the excitation laser, analyzing the photon scattering, automatically adjusting the timed delay to a modified timed delay based on the analyzed photon scattering and following the modified timed delay, enabling a Raman spectrometer to monitor Raman scattering caused by the excitation laser during a Raman monitoring period.
摘要翻译：一个实施例包括一种方法，其包括在激发周期之后，在第一激发周期之后的定时延迟之后启用激发激光，监测由激发激光引起的光子散射，分析光子散射，将定时延迟自动调整为修改的定时基于分析的光子散射延迟并遵循修改的定时延迟，使拉曼光谱仪能够在拉曼监测期间监测由激发激光引起的拉曼散射。

53. 发明授权

US07564887B2 Long wavelength vertical cavity surface emitting lasers 失效
标题翻译：长波长垂直腔表面发射激光器
公开(公告)号：US07564887B2
公开(公告)日：2009-07-21
申请号：US11066793
申请日：2005-02-25
申请人： Tzu-Yu Wang , Jin K. Kim
发明人： Tzu-Yu Wang , Jin K. Kim
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/18327 , H01S5/024 , H01S5/0422 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S2301/166
摘要： A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.
摘要翻译：垂直腔表面发射激光器（VCSEL）包括分别提供独特形式的驱动电流和横向限制的独立可定义的电流和光限制结构。光导可以由上分布布拉格反射器（DBR）形成，作为蚀刻的台面结构和/或作为腔内光导。当前引导件可以包括上部DBR内的离子注入区域。在上DBR上形成电介质结构，并围绕光导。

54. 发明授权

US07433381B2 InP based long wavelength VCSEL 失效
标题翻译：基于InP的长波长VCSEL
公开(公告)号：US07433381B2
公开(公告)日：2008-10-07
申请号：US10606104
申请日：2003-06-25
申请人： Tzu-Yu Wang , Hoki Kwon , Jae-Hyun Ryou , Gyoungwon Park , Jin K. Kim
发明人： Tzu-Yu Wang , Hoki Kwon , Jae-Hyun Ryou , Gyoungwon Park , Jin K. Kim
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18341 , H01S5/18372 , H01S5/2063 , H01S5/34313
摘要： A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.
摘要翻译：具有衬底的长波长垂直腔表面发射激光器，位于衬底上的第一反射镜，位于第一反射镜上的有源区，位于有源区上的第二反射镜。第一反射镜可以具有几对层，其中一对或多对该反射镜具有氧化层。衬底可以包括InP，并且镜组件可以与InP兼容。第一反射镜中的一个或多个层可以通过沟槽状方法或其它布置被氧化。

55. 发明申请

US20060145110A1 Microfluidic modulating valve 失效
标题翻译：微流控调节阀
公开(公告)号：US20060145110A1
公开(公告)日：2006-07-06
申请号：US11030508
申请日：2005-01-06
申请人： Tzu-Yu Wang , Eugen Cabuz
发明人： Tzu-Yu Wang , Eugen Cabuz
IPC分类号： F16K31/02
CPC分类号： F16K99/0001 , F15C5/00 , F16K99/0026 , F16K99/0051 , F16K2099/0069 , F16K2099/0084 , F16K2099/0086
摘要： A valve is provided that can selectively change the size of a flow channel in a valve in order to modulate the fluid flow through the valve. In one illustrative embodiment, the valve includes a housing that defines a cavity, with an inlet and an outlet extending into the cavity. A diaphragm is positioned in the cavity, where at least part of the diaphragm defines at least part of the fluid path. One or more electrodes are fixed relative to the diaphragm, and one or more electrodes are fixed relative to the housing such that the diaphragm can be electrostatically actuated to modulate the fluid flow through the valve.
摘要翻译：提供一种阀，其可以选择性地改变阀中的流动通道的尺寸，以便调节通过阀的流体流动。在一个说明性实施例中，阀包括限定空腔的壳体，其中入口和出口延伸到空腔中。隔膜位于空腔中，其中隔膜的至少一部分限定流体路径的至少一部分。一个或多个电极相对于隔膜固定，并且一个或多个电极相对于壳体固定，使得隔膜可被静电致动以调节通过阀的流体流动。

56. 发明申请

US20050243890A1 Metal-assisted DBRs for thermal management in VCSELS 有权
标题翻译：金属辅助DBRs用于VCSELS中的热管理
公开(公告)号：US20050243890A1
公开(公告)日：2005-11-03
申请号：US11026161
申请日：2004-12-30
申请人： Jin Kim , Tzu-Yu Wang , Gyoungwon Park
发明人： Jin Kim , Tzu-Yu Wang , Gyoungwon Park
IPC分类号： H01S3/08 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/024 , H01S5/18308 , H01S5/18375 , H01S5/18377 , H01S5/3095 , H01S5/34306
摘要： A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.
摘要翻译： VCSEL包括具有部分去除部分的基板; 具有金属层和第一反射镜叠层的金属辅助DBR，其中所述金属层位于所述基板的部分去除部分; 在金属辅助DBR上具有多个量子阱的有源区; 以及在所述有源区域上的第二反射镜堆叠，其中所述第一反射镜叠层的多个交替层比不具有所述集成金属反射器的VCSEL通常需要的数量小得多。这种金属辅助DBR对于InP衬底上的长波长VCSEL或GaAs衬底上的红色VCSEL特别有用。

57. 发明申请

US20050243886A1 Carrier bonded 1550 nm VCSEL with InP substrate removal 失效
标题翻译：载体键合1550nm VCSEL，其中去除了InP衬底
公开(公告)号：US20050243886A1
公开(公告)日：2005-11-03
申请号：US11007081
申请日：2004-12-08
申请人： Tzu-Yu Wang , Jin Kim , Hoki Kwon , Gyoungwon Park , Jae-Hyun Ryou
发明人： Tzu-Yu Wang , Jin Kim , Hoki Kwon , Gyoungwon Park , Jae-Hyun Ryou
IPC分类号： H01S3/08 , H01S5/187
CPC分类号： H01S5/18377 , H01S5/18341 , H01S5/18375
摘要： A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the
摘要翻译：垂直腔表面发射激光器（VCSEL）结构包括布置在衬底上的底部分布布拉格反射器（DBR）; 插入在底部DBR和基板之间的金属层，其中金属层和底部DBR形成复合反射镜结构。可以在金属层和底部DBR之间插入图案化的介电层，以减少金属层和底部DBR之间的有害的化学反应。金属层直接接触底部DBR的一部分，以增强电气和导热性

58. 发明申请

US20050090062A1 [METHOD FOR FORMING NITRIDED TUNNEL OXIDE LAYE] 有权
标题翻译： [形成氮化物氧化物层的方法]
公开(公告)号：US20050090062A1
公开(公告)日：2005-04-28
申请号：US10605782
申请日：2003-10-27
申请人： Tzu-Yu Wang
发明人： Tzu-Yu Wang
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01L21/28273 , H01L21/28185 , H01L21/28202 , Y10S438/954
摘要： A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.
摘要翻译：描述了形成氮化隧道氧化物层的方法。在半导体衬底上形成作为隧道氧化物层的氧化硅层，并且进行等离子体氮化处理以将氮原子注入到氧化硅层中。然后进行热驱入工艺以将植入的氮原子扩散到氧化硅层上。

59. 发明申请

US20050078725A1 Methods for angled ion implantation of semiconductor devices 审中-公开
标题翻译：半导体器件成角度离子注入的方法
公开(公告)号：US20050078725A1
公开(公告)日：2005-04-14
申请号：US10969465
申请日：2004-10-20
申请人： Tzu-Yu Wang
发明人： Tzu-Yu Wang
IPC分类号： H01L21/265 , H01S5/00 , H01L21/00
CPC分类号： H01L21/26586
摘要： This disclosure concerns methods for ion implantation of semiconductor devices such as VCSELs. In on example of such a method, a surface of the semiconductor structure is disposed at a predetermined orientation. The semiconductor structure is then rotated at a predetermined speed. An ion beam of characteristic flux is generated and directed at the surface of the semiconductor structure so that the ion beam is incident on the surface at an incident flux angle. Because the ion beam is incident on the surface at a defined angle, an implant region having an approximately wedge shaped cross-section is formed in the semiconductor device.
摘要翻译：本公开涉及半导体器件（例如VCSEL）的离子注入方法。在这种方法的例子中，半导体结构的表面以预定取向设置。然后半导体结构以预定速度旋转。产生特征通量的离子束并且指向半导体结构的表面，使得离子束以入射磁通角入射在表面上。因为离子束以限定的角度入射在表面上，所以在半导体器件中形成具有大致楔形横截面的植入区域。

60. 发明授权

US06813293B2 Long wavelength VCSEL with tunnel junction, and implant 失效
标题翻译：具有隧道结的长波长VCSEL和植入物
公开(公告)号：US06813293B2
公开(公告)日：2004-11-02
申请号：US10301380
申请日：2002-11-21
申请人： Ralph H. Johnson , Tzu-Yu Wang
发明人： Ralph H. Johnson , Tzu-Yu Wang
IPC分类号： H01S500
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/1833 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S5/3095
摘要： A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.
摘要翻译：具有隧道结的垂直腔发射激光器（VCSEL）。该结可以通过植入物分离成上反射镜并经过结和p层。 VCSEL周围的沟槽可能会导致电容降低，并可能导致更多的直流隔离。植入物可以在制成沟槽之后发生。一些植入物可以通过沟槽到底部反射镜。可以提供额外的隔离和电流限制，其中在结点下方的层的侧向氧化。内部沟槽可以从VCSEL的顶部垂直地连接到结点下面的可氧化层。为了进一步隔离，可以在接合焊盘周围放置开放沟槽，并且其到VCSEL的桥接器和内部垂直沟槽可以被放置在焊盘上并且其桥接器到达可氧化层。

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