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51. 发明申请

US20130032841A1 Light-Emitting Device and Lighting Device 有权
标题翻译：发光装置和照明装置
公开(公告)号：US20130032841A1
公开(公告)日：2013-02-07
申请号：US13560046
申请日：2012-07-27
申请人： Yasuhiro Jinbo , Kensuke Yoshizumi
发明人： Yasuhiro Jinbo , Kensuke Yoshizumi
IPC分类号： H01L33/58
CPC分类号： H01L51/5265 , H01L51/504 , H01L51/5212 , H01L51/5275 , H01L2251/5361
摘要： A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.
摘要翻译：提供具有各种发光颜色并且可以有效且容易地制造的发光装置。由半透射半导体膜形成的第一导电层设置在第一发光元件区域中，使得特定波长区域中的光的强度随腔效应而增加。结果，整个发光装置可以发出所需的光。当使用具有低电阻的材料形成第一导电层时，可以防止发光器件中的透明导电层中的电压降。因此，可以制造发光不均匀性较差的发光元件。通过将这种结构应用于白色发光元件，可以获得具有优异显色特性的期望的白色发光或白色发光。此外，可以提供包括具有较少发射不均匀性的白光发射装置的大面积照明装置。

52. 发明授权

US08039842B2 Thin film transistor and display device including thin film transistor 有权
标题翻译：薄膜晶体管和显示装置包括薄膜晶体管
公开(公告)号：US08039842B2
公开(公告)日：2011-10-18
申请号：US12467048
申请日：2009-05-15
申请人： Yasuhiro Jinbo
发明人： Yasuhiro Jinbo
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with favorable electric characteristics is provided, which includes a gate electrode layer; a first insulating layer covering the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions, which are provided with a distance therebetween and at least partly overlap with the gate electrode layer; a microcrystalline semiconductor layer which is provided over the first insulating layer in part of a channel formation region, and at least partly overlaps with the gate electrode layer and does not overlap with at least one of the pair of impurity semiconductor layers; a second insulating layer between and in contact with the first insulating layer and the microcrystalline semiconductor layer; and an amorphous semiconductor layer over the first insulating layer, covering the second insulating layer and the microcrystalline semiconductor layer. The first insulating layer is a silicon nitride layer and the second insulating layer is a silicon oxynitride layer.
摘要翻译：提供具有良好电特性的薄膜晶体管，其包括栅电极层; 覆盖所述栅电极层的第一绝缘层; 形成源区和漏区的一对杂质半导体层，其间设置有与栅电极层至少部分重叠的距离; 微晶半导体层，其设置在所述第一绝缘层的一部分沟道形成区域中，并且与所述栅电极层至少部分重叠，并且不与所述一对杂质半导体层中的至少一个重叠; 在第一绝缘层和微晶半导体层之间并与之接触的第二绝缘层; 以及在所述第一绝缘层上方的覆盖所述第二绝缘层和所述微晶半导体层的非晶半导体层。第一绝缘层是氮化硅层，第二绝缘层是氮氧化硅层。

53. 发明授权

US07821012B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US07821012B2
公开(公告)日：2010-10-26
申请号：US12397460
申请日：2009-03-04
申请人： Yasuhiro Jinbo
发明人： Yasuhiro Jinbo
IPC分类号： H01L33/00
CPC分类号： H01L29/66765 , H01L29/42384 , H01L29/4908 , H01L29/78618 , H01L29/78669
摘要： A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction over the first insulating layer and which at least partly overlaps with the gate electrode layer and the pair of impurity semiconductor layers; a pair of microcrystalline semiconductor layers provided apart from each other on and in contact with the second insulating layers; and an amorphous semiconductor layer covering the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers and which extends to exist between the pair of microcrystalline semiconductor layers. The first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer.
摘要翻译：薄膜晶体管包括覆盖栅电极层的第一绝缘层; 源极和漏极区域，其至少部分地与栅电极层重叠; 一对第二绝缘层，其在所述第一绝缘层上在沟道长度方向上彼此分开设置，并且至少部分地与所述栅电极层和所述一对杂质半导体层重叠; 一对微晶半导体层，其彼此分开设置在第二绝缘层上并与第二绝缘层接触; 以及覆盖所述第一绝缘层，所述一对第二绝缘层和所述一对微晶半导体层并且延伸以存在于所述一对微晶半导体层之间的非晶半导体层。第一绝缘层是氮化硅层，一对第二绝缘层中的每一个都是氮氧化硅层。

54. 发明申请

US20060051914A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060051914A1
公开(公告)日：2006-03-09
申请号：US11218329
申请日：2005-09-02
申请人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
发明人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1266 , H01L27/1277 , H01L27/1292 , H01L29/66765
摘要： An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.
摘要翻译：在衬底上形成非晶半导体膜和包含选自元素周期表第15族的元素的半导体膜。形成包括岛状非晶半导体膜和岛状半导体膜的岛状区域。源极电极和漏电极形成在岛状区域上。使用源电极和漏极作为掩模去除未被源电极和漏电极覆盖的岛状半导体膜。此时，岛状非晶半导体膜的厚度减小，并且一部分岛状非晶半导体膜露出。将促进结晶的催化元素加入其中暴露岛状非晶半导体膜的区域。通过热处理，岛状非晶半导体膜结晶化，催化元素被吸收。

55. 发明授权

US09419142B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09419142B2
公开(公告)日：2016-08-16
申请号：US13431073
申请日：2012-03-27
申请人： Masafumi Morisue , Yasuhiro Jinbo , Gen Fujii , Hajime Kimura
发明人： Masafumi Morisue , Yasuhiro Jinbo , Gen Fujii , Hajime Kimura
IPC分类号： H01L29/786 , G02F1/167 , H01L27/12 , H01L31/0392 , H01L51/00 , H01L27/32 , H01L51/56
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133345 , G02F1/133711 , G02F1/133734 , G02F1/133784 , G02F1/13394 , G02F1/167 , H01L27/1214 , H01L27/1218 , H01L27/3244 , H01L27/3272 , H01L29/78603 , H01L29/78633 , H01L31/0392 , H01L31/03925 , H01L31/03926 , H01L31/1896 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
摘要翻译：一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

56. 发明授权

US08399329B2 Method for manufacturing SOI substrate and semiconductor device 有权
公开(公告)号：US08399329B2
公开(公告)日：2013-03-19
申请号：US12722684
申请日：2010-03-12
申请人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

57. 发明授权

US08314018B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08314018B2
公开(公告)日：2012-11-20
申请号：US12901005
申请日：2010-10-08
申请人： Akihisa Shimomura , Naoki Okuno , Masaki Koyama , Yasuhiro Jinbo
发明人： Akihisa Shimomura , Naoki Okuno , Masaki Koyama , Yasuhiro Jinbo
IPC分类号： H01L21/425 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1229 , H01L27/1251 , H01L27/1262 , H01L27/1266 , H01L29/66772
摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
摘要翻译：通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

58. 发明授权

US08294155B2 Thin film transistor, display device having thin film transistor, and method for manufacturing the same 有权
标题翻译：薄膜晶体管，具有薄膜晶体管的显示装置及其制造方法
公开(公告)号：US08294155B2
公开(公告)日：2012-10-23
申请号：US13187584
申请日：2011-07-21
申请人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Yasuhiro Jinbo , Satoshi Kobayashi , Daisuke Kawae
发明人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Yasuhiro Jinbo , Satoshi Kobayashi , Daisuke Kawae
IPC分类号： H01L29/10
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
摘要翻译：提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

59. 发明授权

US08263421B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08263421B2
公开(公告)日：2012-09-11
申请号：US12944841
申请日：2010-11-12
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

60. 发明授权

US08222116B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08222116B2
公开(公告)日：2012-07-17
申请号：US11705828
申请日：2007-02-14
申请人： Yasuhiro Jinbo , Masafumi Morisue , Hajime Kimura , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Masafumi Morisue , Hajime Kimura , Shunpei Yamazaki
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译：本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

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