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51. 发明申请

US20120282596A1 Sensor for Biomolecules 有权
标题翻译：生物分子传感器
公开(公告)号：US20120282596A1
公开(公告)日：2012-11-08
申请号：US13552727
申请日：2012-07-19
申请人： Marwan H. Khater , Tak H. Ning , Lidija Sekaric , Sufi Zafar
发明人： Marwan H. Khater , Tak H. Ning , Lidija Sekaric , Sufi Zafar
IPC分类号： G01N27/26
CPC分类号： G01N33/54373 , B82Y10/00 , G01N27/3276 , G01N27/4145 , G01N33/543 , H01L29/785 , Y10S977/721 , Y10S977/92 , Y10S977/953
摘要： A method for sensing biomolecules in an electrolyte includes exposing a gate dielectric surface of a sensor comprising a silicon fin to the electrolyte, wherein the gate dielectric surface comprises a dielectric material and antibodies configured to bind with the biomolecules; applying a gate voltage to an electrode immersed in the electrolyte; and measuring a change in a drain current flowing in the silicon fin; and determining an amount of the biomolecules that are present in the electrolyte based on the change in the drain current.
摘要翻译：用于感测电解质中的生物分子的方法包括将包含硅翅片的传感器的栅极电介质表面暴露于电解质，其中所述栅极电介质表面包括电介质材料和被配置为与所述生物分子结合的抗体; 对浸在电解质中的电极施加栅极电压; 并测量在硅片中流动的漏极电流的变化; 以及基于漏极电流的变化确定存在于电解质中的生物分子的量。

52. 发明授权

US08080456B2 Robust top-down silicon nanowire structure using a conformal nitride 有权
标题翻译：使用保形氮化物的坚固的自顶向下的硅纳米线结构
公开(公告)号：US08080456B2
公开(公告)日：2011-12-20
申请号：US12469304
申请日：2009-05-20
申请人： Tymon Barwicz , Lidija Sekaric , Jeffrey W. Sleight
发明人： Tymon Barwicz , Lidija Sekaric , Jeffrey W. Sleight
IPC分类号： H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： In one exemplary embodiment, a method for fabricating a nanowire product comprising: providing a wafer having a buried oxide (BOX) upper layer in which a well is formed, the wafer further having a nanowire having ends resting on the BOX layer such that the nanowire forms a beam spanning said well; and forming a mask coating on an upper surface of the BOX layer leaving an uncoated window over a center part of said beam over said well and also forming a mask coating around beam intermediate ends between each end of a beam center part and a side wall of said well. In another exemplary embodiment, a nanowire product comprising: a wafer having a buried oxide (BOX) upper layer in which a well having side walls is formed; a nanowire having ends resting on the BOX layer so as to form a beam spanning said well and said side walls; and a hard mask coating on an upper surface of said BOX layer and around intermediate ends of said beam between each side wall of said well and ends of a center part of said beam leaving an uncoated window over a beam center part through which oxidation of said beam center part can take place.
摘要翻译：在一个示例性实施例中，一种用于制造纳米线产品的方法，包括：提供具有其中形成阱的掩埋氧化物（BOX）上层的晶片，所述晶片还具有具有搁置在BOX层上的端部的纳米线，使得纳米线形成横跨所述井的梁; 并且在BOX层的上表面上形成掩模涂层，在所述孔的中心部分上留下未涂覆的窗口，并且还在梁的中心部分的两端和侧壁之间的梁中间端部说得好在另一个示例性实施例中，纳米线产品包括：具有掩埋氧化物（BOX）上层的晶片，其中形成具有侧壁的阱; 具有搁置在BOX层上的端部以形成横跨所述井和所述侧壁的梁的纳米线; 以及在所述BOX层的上表面上并且在所述孔的每个侧壁和所述梁的中心部分的端部之间的所述梁的中间端周围的硬掩模涂层，在光束中心部分上留下未涂覆的窗口，通过所述光束中心部分氧化所述梁中心部分可以发生。

53. 发明授权

US08039909B2 Semiconductor nanowires charge sensor 有权
标题翻译：半导体纳米线充电传感器
公开(公告)号：US08039909B2
公开(公告)日：2011-10-18
申请号：US12324219
申请日：2008-11-26
申请人： Ali Afzali-Ardakani , Lidija Sekaric , George S. Tulevski
发明人： Ali Afzali-Ardakani , Lidija Sekaric , George S. Tulevski
IPC分类号： H01L27/14
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/041 , H01L29/0673
摘要： A semiconductor nanowire is coated with a chemical coating layer that comprises a functional material which modulates the quantity of free charge carriers within the semiconductor nanowire. The outer surface of the chemical coating layer includes a chemical group that facilitates bonding with molecules to be detected through electrostatic forces. The bonding between the chemical coating layer and the molecules alters the electrical charge distribution in the chemical coating layer, which alters the amount of the free charge carriers and the conductivity in the semiconductor nanowire. The coated semiconductor nanowire may be employed as a chemical sensor for the type of chemicals that bonds with the functional material in the chemical coating layer. Detection of such chemicals may indicate pH of a solution, a vapor pressure of a reactive material in gas phase, and/or a concentration of a molecule in a solution.
摘要翻译：半导体纳米线涂覆有化学涂层，其包含调节半导体纳米线内的自由电荷载体的量的功能材料。化学被膜层的外表面包括有助于通过静电力与要检测的分子结合的化学基团。化学涂层和分子之间的结合改变化学涂层中的电荷分布，其改变半导体纳米线中游离载流子的量和导电性。涂覆的半导体纳米线可以用作化学传感器，用于与化学涂层中的功能材料结合的化学品类型。这种化学物质的检测可以指示溶液的pH，气相中的反应物质的蒸汽压和/或溶液中分子的浓度。

54. 发明申请

US20100252810A1 GATE PATTERNING OF NANO-CHANNEL DEVICES 有权
标题翻译： NANO通道设备的门控方案
公开(公告)号：US20100252810A1
公开(公告)日：2010-10-07
申请号：US12417954
申请日：2009-04-03
申请人： Nicholas C. M. Fuller , Sarunya Bangsaruntip , Guy Cohen , Sebastian U. Engelmann , Lidija Sekaric , Qingyun Yang , Ying Zhang
发明人： Nicholas C. M. Fuller , Sarunya Bangsaruntip , Guy Cohen , Sebastian U. Engelmann , Lidija Sekaric , Qingyun Yang , Ying Zhang
IPC分类号： H01L29/41 , H01L21/306 , H01L21/302
CPC分类号： H01L21/32137 , H01L29/0665 , H01L29/0673 , H01L29/66439 , Y10S977/762 , Y10S977/938
摘要： Methodologies and gate etching processes are presented to enable the fabrication of gate conductors of semiconductor devices, such as NFETs and/or PFETs, which are equipped with nano-channels. In one embodiment, a sacrificial spacer of equivalent thickness to the diameter of the gate nano-channel is employed and is deposited after patterning the gate conductor down to the gate dielectric. The residue gate material that is beneath the nano-channel is removed utilizing a medium to high density, bias-free, fluorine-containing or fluorine- and chlorine-containing isotropic etch process without compromising the integrity of the gate. In another embodiment, an encapsulation/passivation layer is utilized. In yet further embodiment, no sacrificial spacer or encapsulation/passivation layer is used and gate etching is performed in an oxygen and nitrogen-free ambient.
摘要翻译：提出了方法和栅极蚀刻工艺，以便制造配备有纳米通道的半导体器件（例如NFET和/或PFET）的栅极导体。在一个实施例中，使用与栅极纳米通道的直径相当厚度的牺牲间隔物，并且在将栅极导体图案化成栅极电介质之后进行沉积。使用中等至高密度，无偏压，含氟或含氟和含氯的各向同性蚀刻工艺除去纳米通道下面的残留物栅极材料，而不损害栅极的完整性。在另一个实施例中，使用封装/钝化层。在又一实施例中，不使用牺牲间隔物或封装/钝化层，并且在无氧和无氮的环境中进行栅极蚀刻。

55. 发明申请

US20100128260A1 SEMICONDUCTOR NANOWIRE ELECTROMAGNETIC RADIATION SENSOR 有权
公开(公告)号：US20100128260A1
公开(公告)日：2010-05-27
申请号：US12324151
申请日：2008-11-26
申请人： Ali Afzali-Ardakani , Lidija Sekaric
发明人： Ali Afzali-Ardakani , Lidija Sekaric
IPC分类号： H01L31/0352 , H01L31/18 , G01J1/02
CPC分类号： H01L51/428 , B82Y10/00 , H01L29/0673 , H01L51/0049 , H01L51/0077 , H01L51/0081 , H01L51/0085 , H01L51/0086 , H01L51/4213 , Y02E10/549 , Y10S977/762 , Y10T428/292
摘要： A semiconductor nanowire is coated with a chemical coating layer that selectively attaches to the semiconductor material and which forms a dye in a chemical reaction. The dye layer comprises a material that absorbs electromagnetic radiation. A portion of the absorbed energy induces electronic excitation in the chemical coating layer from which additional free charge carriers are temporarily donated into the semiconductor nanowire. Thus, the conductivity of the semiconductor nanowire increases upon illumination on the dye layer. The semiconductor nanowire, and the resulting dye layer collective operate as a detector for electromagnetic radiation.
摘要翻译：半导体纳米线涂有选择性地附着于半导体材料并在化学反应中形成染料的化学涂层。染料层包括吸收电磁辐射的材料。吸收的能量的一部分在化学涂层中引起电子激发，其中额外的自由电荷载体暂时捐赠到半导体纳米线中。因此，在染料层上照射时，半导体纳米线的导电性增加。半导体纳米线和所得到的染料层集合起来用作电磁辐射的检测器。

56. 发明申请

US20060275694A1 High resolution silicon-containing resist 失效
标题翻译：高分辨率含硅抗蚀剂
公开(公告)号：US20060275694A1
公开(公告)日：2006-12-07
申请号：US11146871
申请日：2005-06-07
申请人： James Bucchignano , Wu-Song Huang , David Klaus , Lidija Sekaric , Raman Viswanathan
发明人： James Bucchignano , Wu-Song Huang , David Klaus , Lidija Sekaric , Raman Viswanathan
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
摘要翻译：含有硅的非化学增强辐射敏感抗蚀剂组合物特别适用于光刻应用，尤其是电子束光刻。更具体地说，可以使用包含具有至少一个含硅部分的聚合物和在辐射暴露时可切割形成水溶性碱可溶部分的至少一个辐射敏感部分的辐射敏感性抗蚀剂组合物来形成低于50nm的特征，没有模糊。

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