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51. 发明授权

US06448164B1 Dark field image reversal for gate or line patterning 失效
标题翻译：用于门或线图案的暗场图像反转
公开(公告)号：US06448164B1
公开(公告)日：2002-09-10
申请号：US09716216
申请日：2000-11-21
申请人： Christopher F. Lyons , Ramkumar Subramanian , Marina V. Plat , Todd P. Lukanc
发明人： Christopher F. Lyons , Ramkumar Subramanian , Marina V. Plat , Todd P. Lukanc
IPC分类号： H01L213205
CPC分类号： H01L21/0274 , H01L21/28123
摘要： A method of forming either a gate pattern or a line pattern in a resist by using a dark field mask and a combination of a negative photoresist and a positive photoresist. The dark field mask is used to create a hole within the positive photoresist, by exposing only a portion of the positive photoresist to light, and then by subjecting the positive photoresist to a developer. The negative photoresist is formed within the hole of the positive photoresist, and etched or polished so that it is only disposed within the hole. The negative photoresist and the positive photoresist are subjected to a flood light exposure, and then to a developer. This causes the positive photoresist to dissolve, leaving the negative photoresist, thereby providing a very-small-dimension resist pattern that can be used to form either a gate or a line for a semiconductor device.
摘要翻译：通过使用暗场掩模和负光致抗蚀剂和正性光致抗蚀剂的组合在抗蚀剂中形成栅极图案或线图案的方法。暗场掩模用于在正性光致抗蚀剂中产生孔，通过仅将一部分正性光致抗蚀剂暴露于光，然后通过使正性光致抗蚀剂经受显影剂。负光致抗蚀剂形成在正性光致抗蚀剂的孔内，并被蚀刻或抛光，使得其仅设置在孔内。对负性光致抗蚀剂和正性光致抗蚀剂进行泛光曝光，然后进行显影。这导致正性光致抗蚀剂溶解，留下负性光致抗蚀剂，从而提供可用于形成半导体器件的栅极或线的非常小的抗蚀剂图案。

52. 发明授权

US5821036A Method of developing positive photoresist and compositions therefor 失效
标题翻译：开发正性光致抗蚀剂及其组合物的方法
公开(公告)号：US5821036A
公开(公告)日：1998-10-13
申请号：US960105
申请日：1997-10-27
申请人： Stanley A. Ficner , John Magvas , Christopher F. Lyons , Wayne M. Moreau , Marina V. Plat
发明人： Stanley A. Ficner , John Magvas , Christopher F. Lyons , Wayne M. Moreau , Marina V. Plat
IPC分类号： G03F7/022 , G03F7/32 , G03F7/30
CPC分类号： G03F7/322
摘要： A method and composition for developing positive photoresists is illustrated. The developer of the present invention includes an ammonium hydroxide aqueous base and a surfactant of the fluorinated alkyl alkoxylate class most preferably present in an amount of from 10 to 30 ppm. A particularly preferred surfactant includes sulfonyl and amine moieties.
摘要翻译：示出了用于开发正性光致抗蚀剂的方法和组合物。本发明的显影剂包括氢氧化铵水性碱和氟化烷基烷氧基化物类的表面活性剂，最优选以10至30ppm的量存在。特别优选的表面活性剂包括磺酰基和胺部分。

53. 发明授权

US07169711B1 Method of using carbon spacers for critical dimension (CD) reduction 失效
标题翻译：使用碳间隔物进行临界尺寸（CD）还原的方法
公开(公告)号：US07169711B1
公开(公告)日：2007-01-30
申请号：US10170984
申请日：2002-06-13
申请人： Christopher F. Lyons , Philip A. Fisher , Richard J. Huang , Cyrus E. Tabery
发明人： Christopher F. Lyons , Philip A. Fisher , Richard J. Huang , Cyrus E. Tabery
IPC分类号： H01L21/302
CPC分类号： H01L21/3086 , H01L21/0337
摘要： A method of using carbon spacers for critical dimension reduction can include providing a patterned photoresist layer above a substrate where the patterned photoresist layer has an aperture with a first width, depositing a carbon film over the photoresist layer and etching the deposited carbon film to form spacers on lateral side walls of the aperture of the patterned photoresist layer, etching the substrate using the formed spacers and patterned photoresist layer as a pattern to form a trench having a second width, and removing the patterned photoresist layer and formed spacers using an oxidizing etch.
摘要翻译：使用碳间隔物进行临界尺寸减小的方法可以包括在基底上提供图案化的光致抗蚀剂层，其中图案化的光致抗蚀剂层具有第一宽度的孔，在光致抗蚀剂层上沉积碳膜并蚀刻沉积的碳膜以形成间隔物在图案化光致抗蚀剂层的孔的侧壁上，使用所形成的间隔物和图案化的光致抗蚀剂层作为图案蚀刻衬底，以形成具有第二宽度的沟槽，并使用氧化蚀刻去除图案化的光致抗蚀剂层和形成的间隔物。

54. 发明授权

US6121123A Gate pattern formation using a BARC as a hardmask 失效
标题翻译：使用BARC作为硬掩模的栅格图案形成
公开(公告)号：US6121123A
公开(公告)日：2000-09-19
申请号：US924573
申请日：1997-09-05
申请人： Christopher F. Lyons , Scott A. Bell , Olov Karlsson
发明人： Christopher F. Lyons , Scott A. Bell , Olov Karlsson
IPC分类号： G03F7/09 , H01L21/027 , H01L21/28 , H01L21/3213 , H01L21/3205 , H01L21/4763
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/28123 , H01L21/32139 , Y10S438/952
摘要： A gate is formed on a semiconductor substrate by using a SiON film as both a bottom anti-reflective coating (BARC) and subsequently as a hardmask to better control the critical dimension (CD) of the gate as defined via a deep-UV resist mask formed thereon. The wafer stack includes a gate oxide layer over a semiconductor substrate, a polysilicon gate layer over the gate oxide layer, and a SiON film over the conductive layer. The resist mask is formed on the SiON film. The SiON film improves the resist mask formation process and then serves as a hardmask during subsequent etching processes. Then the wafer stack is shaped to form one or more polysilicon gates by sequentially etching through selected portions of the SiON film and the gate conductive layer as defined by the etch windows in the original resist mask. Once the gate has been properly shaped, any remaining portions of either the resist mask or the SiON film are then removed.
摘要翻译：通过使用SiON膜作为底部抗反射涂层（BARC）并随后作为硬掩模在半导体衬底上形成栅极，以更好地控制通过深UV抗蚀剂掩模定义的栅极的临界尺寸（CD）形成在其上。晶片堆叠包括半导体衬底上的栅极氧化物层，栅极氧化物层上的多晶硅栅极层和导电层上的SiON膜。在SiON膜上形成抗蚀剂掩模。 SiON膜改善了抗蚀剂掩模形成过程，然后在随后的蚀刻工艺中用作硬掩模。然后通过依次蚀刻由原始抗蚀剂掩模中的蚀刻窗口所限定的SiON膜和栅极导电层的选定部分，将晶片堆叠成形以形成一个或多个多晶硅栅极。一旦浇口已正确成型，然后除去抗蚀剂掩模或SiON膜的任何剩余部分。

55. 发明授权

US06627360B1 Carbonization process for an etch mask 失效
标题翻译：刻蚀掩模的碳化工艺
公开(公告)号：US06627360B1
公开(公告)日：2003-09-30
申请号：US09900985
申请日：2001-07-09
申请人： Scott A. Bell , Christopher F. Lyons
发明人： Scott A. Bell , Christopher F. Lyons
IPC分类号： G03F900
CPC分类号： H01L21/32139 , G03F7/40 , G03F7/405 , H01L21/0274 , H01L21/28123 , H01L21/31155
摘要： A method of forming an etch mask includes patterning a top surface of a photoresist layer, carbonizing the patterned top surface of the photoresist layer and selectively removing portions of the photoresist layer. Portions of the photoresist layer under the carbonized areas remain. A substrate or a layer above substrate can be etched or processed in accordance with the mask formed from the photoresist layer.
摘要翻译：形成蚀刻掩模的方法包括图案化光致抗蚀剂层的顶表面，碳化光致抗蚀剂层的图案化顶表面并选择性地去除光致抗蚀剂层的部分。在碳化区域下方的光致抗蚀剂层的部分保留。可以根据由光致抗蚀剂层形成的掩模来蚀刻或处理衬底或衬底上的层。

56. 发明授权

US06380588B1 Semiconductor device having uniform spacers 有权
标题翻译：具有均匀间隔物的半导体器件
公开(公告)号：US06380588B1
公开(公告)日：2002-04-30
申请号：US09567013
申请日：2000-05-09
申请人： William G. En , Minh Van Ngo , Chih-Yuk Yang , David K. Foote , Scott A. Bell , Olov B. Karlsson , Christopher F. Lyons
发明人： William G. En , Minh Van Ngo , Chih-Yuk Yang , David K. Foote , Scott A. Bell , Olov B. Karlsson , Christopher F. Lyons
IPC分类号： H01L2100
CPC分类号： H01L21/31116
摘要： A semiconductor device having both functional and non-functional or dummy lines, regions and/or patterns to create a topology that causes the subsequently formed spacers to be more predictable and uniform in shape and size.
摘要翻译：具有功能和非功能或虚拟线，区域和/或图案的半导体器件，以产生导致随后形成的间隔物在形状和尺寸上更可预测和均匀的拓扑。

57. 发明授权

US5963841A Gate pattern formation using a bottom anti-reflective coating 失效
标题翻译：使用底部抗反射涂层的栅格图案形成
公开(公告)号：US5963841A
公开(公告)日：1999-10-05
申请号：US924370
申请日：1997-09-05
申请人： Olov B. Karlsson , Christopher F. Lyons , Minh Van Ngo , Scott A. Bell , David K. Foote
发明人： Olov B. Karlsson , Christopher F. Lyons , Minh Van Ngo , Scott A. Bell , David K. Foote
IPC分类号： H01L21/3213 , H01L21/302
CPC分类号： H01L21/32139
摘要： A gate is formed on a semiconductor substrate by using a bottom anti-reflective coating (BARC) to better control the critical dimension (CD) of the gate as defined via a deep-UV resist mask formed thereon. The wafer stack includes a gate oxide layer over a semiconductor substrate, a polysilicon gate layer over the gate oxide layer, a SiON BARC over the conductive layer, a thin oxide film over the SiON BARC. The resist mask is formed on the oxide film. The SiON BARC improves the resist mask formation process. The wafer stack is then shaped to form one or more polysilicon gates by sequentially etching through selected portions of the oxide film, the BARC, and the gate conductive layer as defined by the etch windows in the resist mask. Once properly shaped, the remaining portions of the resist mask, oxide film and SiON BARC are removed.
摘要翻译：通过使用底部抗反射涂层（BARC）在半导体衬底上形成栅极以更好地控制通过形成在其上的深UV抗蚀剂掩模所限定的栅极的临界尺寸（CD）。晶片堆叠包括半导体衬底上的栅极氧化物层，栅极氧化物层上的多晶硅栅极层，导电层上的SiON BARC，SiON BARC上的薄氧化物膜。在氧化物膜上形成抗蚀剂掩模。 SiON BARC改进了抗蚀剂掩模形成过程。然后通过依次蚀刻通过抗蚀剂掩模中由蚀刻窗口限定的氧化膜，BARC和栅极导电层的选定部分，将晶片堆叠成形以形成一个或多个多晶硅栅极。一旦适当成形，就去除了抗蚀剂掩模，氧化膜和SiON BARC的其余部分。

58. 发明授权

US06773954B1 Methods of forming passive layers in organic memory cells 失效
标题翻译：在有机记忆细胞中形成钝化层的方法
公开(公告)号：US06773954B1
公开(公告)日：2004-08-10
申请号：US10313494
申请日：2002-12-05
申请人： Ramkumar Subramanian , Jane V. Oglesby , Sergey D. Lopatin , Mark S. Chang , Christopher F. Lyons , James J. Xie , Minh Van Ngo
发明人： Ramkumar Subramanian , Jane V. Oglesby , Sergey D. Lopatin , Mark S. Chang , Christopher F. Lyons , James J. Xie , Minh Van Ngo
IPC分类号： H01L5140
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , H01L27/28 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0043 , H01L51/0053 , H01L51/0059 , H01L51/0062 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0085
摘要： Methods of making an organic memory cell made of two electrodes with a controllably conductive media between the two electrodes are disclosed. The controllably conductive Media contains an organic semiconductor layer and passive layer. In particular, novel methods of forming a electrode and adjacent passive layer are described.
摘要翻译：公开了在两个电极之间制造由具有可控导电介质的两个电极制成的有机存储单元的方法。可控导电介质包含有机半导体层和无源层。特别地，描述了形成电极和相邻钝化层的新颖方法。

59. 发明授权

US06878961B2 Photosensitive polymeric memory elements 有权
标题翻译：光敏聚合物记忆元件
公开(公告)号：US06878961B2
公开(公告)日：2005-04-12
申请号：US10951370
申请日：2004-09-28
申请人： Christopher F. Lyons , Ramkumar Subramanian , Mark S. Chang
发明人： Christopher F. Lyons , Ramkumar Subramanian , Mark S. Chang
IPC分类号： G11C11/56 , G11C13/02 , H01L27/28 , H01L35/24
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C13/025 , G11C13/04 , Y10S977/943
摘要： A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.
摘要翻译：公开了一种由在两个电极之间具有可控导电介质的两个电极制成的有机存储单元的方法。可控导电介质包含含有光敏化合物的有机半导体层。使用图案化技术将有机半导体层形成为存储单元。

60. 发明授权

US06787458B1 Polymer memory device formed in via opening 失效
标题翻译：聚合物存储器件形成在通孔中
公开(公告)号：US06787458B1
公开(公告)日：2004-09-07
申请号：US10614397
申请日：2003-07-07
申请人： Nicholas H. Tripsas , Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Angela T. Hui , Christopher F. Lyons , Ramkumar Subramanian , Sergey D. Lopatin , Minh Van Ngo , Ashok M. Khathuria , Mark S. Chang , Patrick K. Cheung , Jane V. Oglesby
发明人： Nicholas H. Tripsas , Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Angela T. Hui , Christopher F. Lyons , Ramkumar Subramanian , Sergey D. Lopatin , Minh Van Ngo , Ashok M. Khathuria , Mark S. Chang , Patrick K. Cheung , Jane V. Oglesby
IPC分类号： H01L2144
CPC分类号： H01L27/285 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.
摘要翻译：本发明的一个方面涉及在通孔中制造聚合物存储器件的方法。该方法包括提供其上具有至少一个含金属层的半导体衬底，在含金属层中形成至少一个铜触点，在铜触点上形成至少一个电介质层，在电介质层中形成至少一个通孔露出铜触点的至少一部分，在通孔的下部形成聚合物材料，并在通孔的上部形成顶部电极材料层。

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