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51. 发明授权

US06346459B1 Process for lift off and transfer of semiconductor devices onto an alien substrate 失效
标题翻译：将半导体器件剥离和转移到外来衬底上的工艺
公开(公告)号：US06346459B1
公开(公告)日：2002-02-12
申请号：US09496597
申请日：2000-02-02
申请人： Alexander Y Usenko , William N. Carr
发明人： Alexander Y Usenko , William N. Carr
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： The method of the invention causes fracture of a semiconductor layer containing semiconductor devices from a support layer and requires no masking of the semiconductor device features during an implantation action. The method initially implants protons throughout an entirety of the semiconductor layer at an energy level that enables the protons to reach a depth that defines a delamination region. The implanting creating defects in the semiconductor devices and charge accumulation in dielectric portions (if any). Next a heat treating step causes a delamination of the semiconductor layer from the support layer that lies beneath the delamination region. Then the semiconductor layer is annealed at a temperature that exceeds a thermal stability temperature of the defects to cause a healing thereof.
摘要翻译：本发明的方法导致从支撑层导致含有半导体器件的半导体层的断裂，并且在植入动作期间不需要对半导体器件特征进行掩蔽。该方法最初以能够使质子达到限定分层区域的深度的能级注入整个半导体层整个质子。植入在半导体器件中产生缺陷并在电介质部分（如果有的话）中产生电荷累积。接下来，热处理步骤使得半导体层从位于分层区域下方的支撑层分层。然后半导体层在超过缺陷的热稳定性温度的温度下退火以引起其愈合。

52. 发明授权

US5781331A Optical microshutter array 失效
标题翻译：光学微阵列
公开(公告)号：US5781331A
公开(公告)日：1998-07-14
申请号：US787307
申请日：1997-01-24
申请人： William N. Carr , Xi-qing Sun
发明人： William N. Carr , Xi-qing Sun
IPC分类号： G01J3/02 , G01J3/10 , G02B6/35 , G02B26/02 , G02F1/01
CPC分类号： G01J3/10 , G01J3/02 , G01J3/0232 , G02B26/02 , G02B6/353 , G02B6/3552 , G02B6/3566 , G02B6/3578 , G02B6/3584
摘要： An optical shutter apparatus includes a source of illumination and a first aperture plate positioned in a path of light from the source of illumination. A cantilever shutter is positioned at each aperture in the aperture plate and includes at least two bonded layers, one being an electrically resistive layer which exhibits a first thermal coefficient of expansion (TCE) and the second layer exhibiting a second TCE that is different from the first TCE. A proximal end of the bonded layers is attached to the aperture plate at each aperture and a distal portion thereof covers the respective aperture when in position thereover. A controller applies signals to the first electrically resistive layer to cause a heating of the first and second layers and a resultant unequal expansion thereof. The expansion causes a flexure of the cantilever shutter and moves the distal portion thereof to either cover or uncover the aperture, which, when uncovered, allows transmission of the illumination therethrough.
摘要翻译：光学快门装置包括照明源和位于来自照明源的光的路径中的第一孔板。悬臂快门位于孔板中的每个孔处，并且包括至少两个接合层，一个是呈现第一热膨胀系数（TCE）的电阻层，并且第二层呈现与第二热膨胀系数不同的第二TCE 第一次TCE。接合层的近端在每个孔处附接到孔板，并且其远端部分在其上的位置处覆盖相应的孔。控制器将信号施加到第一电阻层以引起第一层和第二层的加热，并导致其不均匀的膨胀。膨胀导致悬臂快门的弯曲并使其远端部分移动以覆盖或露出孔，当未被覆盖时，允许照射透过其中。

53. 发明授权

US4567430A Semiconductor device for automation of integrated photoarray characterization 失效
标题翻译：半导体器件用于自动化的集成光电子表征
公开(公告)号：US4567430A
公开(公告)日：1986-01-28
申请号：US705843
申请日：1985-02-26
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： G01R31/28 , G01R31/26
CPC分类号： G01R31/2831
摘要： A semiconductor device structure is used to determine minority carrier lifetime and photosensitivity for production-processed integrated circuits and devices. The device structure family described herein permits determination of the minority carrier lifetime and photosensitivity at high throughput rates using automated test equipment in a normal test facility environment.
摘要翻译：半导体器件结构用于确定生产处理集成电路和器件的少数载流子寿命和光敏性。本文所述的器件结构族允许使用在正常测试设备环境中的自动测试设备来确定高通量率下的少数载流子寿命和光敏性。

54. 发明授权

US11381761B2 Phononically-enhanced imager (PEI) pixel 有权
公开(公告)号：US11381761B2
公开(公告)日：2022-07-05
申请号：US17538506
申请日：2021-11-30
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： G01J5/20 , H04N5/33 , H01L27/146 , H01L27/16 , H01L35/02 , H01L35/28 , G01J5/02 , G01J5/00 , G01J5/12
摘要： An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

55. 发明申请

US20220174228A1 PHONONICALLY-ENHANCED IMAGER (PEI) PIXEL 有权
公开(公告)号：US20220174228A1
公开(公告)日：2022-06-02
申请号：US17538506
申请日：2021-11-30
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： H04N5/33 , H01L27/146 , H01L27/16 , G01J5/02 , H01L35/02 , H01L35/28
摘要： An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

56. 发明申请

US20200124553A1 Impedance spectrometer with programmable elements 审中-公开
公开(公告)号：US20200124553A1
公开(公告)日：2020-04-23
申请号：US16693375
申请日：2019-11-25
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： G01N27/02
摘要： A system and method for sensing wave impedance of a material using an RF power source with a sensor structure comprised of a resonant electromagnetic radiative filter (MEF). The wave impedance is determined by processing a differential RF signal level within an interrogator comprising an impedance calculator. A differential RF signal between a source signal level and a response signal level affected by field coupling of the REF with a material of interest. In embodiments based on frequency scanning transmissometry (FST), the impedance spectrometer determines both the real and imaginary part of the wave impedance of the material. In embodiments the impedance spectrometer comprises an RFID transponder. In embodiments, the interrogator is disposed as payload on a UAV drone. In embodiments, the impedance spectrometer is a node within a communications network.

57. 发明申请

US20190011477A1 Convective inertial accelerometer with metamaterial thermal structure 审中-公开
公开(公告)号：US20190011477A1
公开(公告)日：2019-01-10
申请号：US15992134
申请日：2018-05-29
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： G01P15/00 , G01P15/18 , G01P21/00 , G01C9/02 , H01L29/06
摘要： An accelerometer based on convective thermal transport through a fluid is structured without a solid proof mass. Thermal transport through the fluid is sourced and sensed by thermal elements. The thermal elements are comprised of phononic structures which increase power efficiency for accelerometer operation and provide an increased sensitivity to acceleration vectors. The temperature of the sensing element is a function of the vectored acceleration of the enclosed cavity structure. The accelerometer in embodiments provides an extended range for multi-axis accelerations from excitations such as vibration, shock and gravity. Integration of the accelerometer with CMOS signal conditioning circuitry on the same die is convenient.

58. 发明授权

US10101288B2 Wireless impedance spectrometer 有权
公开(公告)号：US10101288B2
公开(公告)日：2018-10-16
申请号：US15507215
申请日：2015-08-28
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： G01N27/02 , G01R15/14 , G01R29/08 , G01N22/00 , G01R31/00
摘要： A system and method for measuring the permittivity and/or the impedance of a material are based on transmitting a first RF signal to a transponder coupled to the material. The transponder is equipped with a resonant antenna coupled to the material such that the response of the antenna is affected by the material. The signal strength of a second RF signal transmitted by the transponder in response to the first RF signal, and received by an interrogator, is measured. The interrogator can calculate both the real part and the imaginary part of the complex impedance of the material from multiple measurements of the signal strength of the second RF signal taken at a plurality of frequencies of the first RF signal.

59. 发明申请

US20160240762A1 Thermoelectric pixel for temperature sensing, temperature control and thermal energy harvesting 审中-公开
标题翻译：用于温度传感，温度控制和热能采集的热电像素
公开(公告)号：US20160240762A1
公开(公告)日：2016-08-18
申请号：US15083286
申请日：2016-03-29
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： H01L35/26 , H01L35/32
CPC分类号： H01L35/26 , G01K7/01 , G01K7/02 , H01L35/32
摘要： A thermoelectric pixel includes a micro-platform and a device layer having one or more support layers suspended at a perimeter thereof. The pixel includes structures which reduce thermal conductivity and improve platform planarity. In embodiments providing an infrared sensor, carbon nanotubes are used to enhance infrared absorption into the sensor pixel. In other embodiments, the pixel provides a thermoelectric energy harvester.
摘要翻译：热电像素包括微平台和在其周边悬挂有一个或多个支撑层的器件层。该像素包括降低导热性并提高平台平面度的结构。在提供红外传感器的实施例中，使用碳纳米管来增强对传感器像素的红外吸收。在其他实施例中，像素提供热电能量收集器。

60. 发明申请

US20110068987A1 Multiband RFID tag 审中-公开
标题翻译：多频段RFID标签
公开(公告)号：US20110068987A1
公开(公告)日：2011-03-24
申请号：US12462428
申请日：2009-08-05
申请人： William N. Carr
发明人： William N. Carr
IPC分类号： H01Q11/12
CPC分类号： H01Q7/00 , H01Q1/2225
摘要： An RFID tag communicating with a wireless reader interrogator on more than one frequency band. In one embodiment the tag contains independent sensor circuits for a ultra high frequency UHF band and a lower frequency band. The UHF antenna element used in the tag is a double-resonant antenna typically operating in the 860-960 MHz frequency range providing both near and far field sensitivity. Separate resonant antenna structures a the lower frequency band is connected in series with the UHF antenna substructure. The high frequency HF antenna element contains a coil for magnetic induction pickup of signals typically in the 7-14 MHz frequency band but can also be used for the entire spectral range 100 KHz to 100 MHz. The tag antenna is an integrated structure providing for operation in both the UHF and a lower frequency band. In a separate embodiment the tag is configured with the UHF double-dipole antenna structure only and operates in a single UHF band.
摘要翻译： RFID标签与多个频带上的无线读写器询问器进行通信。在一个实施例中，标签包含用于超高频UHF频带和较低频带的独立传感器电路。标签中使用的UHF天线元件是通常以860-960MHz频率范围工作的双谐振天线，提供近场和远场灵敏度。单独的谐振天线结构，较低频带与UHF天线子结构串联连接。高频HF天线元件包含用于通常在7-14MHz频带中的信号进行磁感应拾取的线圈，但也可用于100KHz至100MHz的整个频谱范围。标签天线是提供在UHF和较低频带两者中操作的集成结构。在单独的实施例中，标签仅配置有UHF双偶极天线结构，并在单个UHF频带中工作。

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