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51. 发明授权

US07585729B2 Method of manufacturing a non-volatile memory device 失效
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07585729B2
公开(公告)日：2009-09-08
申请号：US11868195
申请日：2007-10-05
申请人： Sung-Kweon Baek , Bon-Young Koo , Chul-Sung Kim , Jung-Geun Jee , Young-Jin Noh
发明人： Sung-Kweon Baek , Bon-Young Koo , Chul-Sung Kim , Jung-Geun Jee , Young-Jin Noh
IPC分类号： H01L21/00
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42324 , H01L29/4234 , H01L29/792
摘要： A method of manufacturing a non-volatile memory device, includes forming a tunnel isolation layer comprising an oxynitride on a substrate by a simultaneous oxidation and nitridation treatment in which an oxidation process and a nitridation process are simultaneously performed using a processing gas including oxygen and nitrogen. The method further includes performing first and second heat treatments to remove defect sites from the tunnel isolation layer in gas atmospheres including nitrogen (N) and chlorine (Cl), respectively and forming a gate structure on the tunnel isolation layer after the second heat treatment, and forming source/drain regions at surface portions of the substrate adjacent to the gate structure.
摘要翻译：一种制造非易失性存储器件的方法包括通过同时氧化和氮化处理在衬底上形成包含氧氮化物的隧道隔离层，其中使用包括氧和氮的处理气体同时进行氧化过程和氮化处理。该方法还包括进行第一和第二热处理以分别在包括氮（N）和氯（Cl）的气体环境中从隧道隔离层去除缺陷位点，并在第二热处理之后在隧道隔离层上形成栅结构，以及在与栅极结构相邻的衬底的表面部分处形成源极/漏极区域。

52. 发明申请

US20090130834A1 METHODS OF FORMING IMPURITY CONTAINING INSULATING FILMS AND FLASH MEMORY DEVICES INCLUDING THE SAME 失效
标题翻译：形成包含绝缘膜的绝缘体的方法和包括其的闪存存储器件
公开(公告)号：US20090130834A1
公开(公告)日：2009-05-21
申请号：US12188482
申请日：2008-08-08
申请人： Young-Jin Noh , Bon-Young Koo , Si-Young Choi , Ki-Hyun Hwang , Chul-Sung Kim , Sung-Kweon Baek , Jin-Hwa Heo
发明人： Young-Jin Noh , Bon-Young Koo , Si-Young Choi , Ki-Hyun Hwang , Chul-Sung Kim , Sung-Kweon Baek , Jin-Hwa Heo
IPC分类号： H01L21/4763 , H01L21/469
CPC分类号： H01L29/42324 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/28273 , H01L21/3145 , H01L21/31662
摘要： Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.
摘要翻译：形成绝缘膜的方法包括在基板上形成绝缘膜。使用第一组处理条件下的热处理将第一杂质注入绝缘膜，以在绝缘膜的下部形成第一杂质浓度峰。在与第一组处理条件不同的第二组处理条件下，使用热处理将第二杂质注入到绝缘膜中，以在绝缘膜的上部形成第二杂质浓度峰。注入第一杂质并注入第二杂质可以在不使用等离子体的情况下进行，并且第一杂质浓度峰可以高于第二杂质浓度峰。

53. 发明授权

US07419918B2 Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices 有权
标题翻译：形成薄膜结构的方法，制造使用其的非易失性半导体器件的制造方法以及所得的非易失性半导体器件
公开(公告)号：US07419918B2
公开(公告)日：2008-09-02
申请号：US11399670
申请日：2006-04-06
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
IPC分类号： H01L21/31
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11568
摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
摘要翻译：在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

54. 发明申请

US20070023821A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070023821A1
公开(公告)日：2007-02-01
申请号：US11494439
申请日：2006-07-27
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336
摘要： In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.
摘要翻译：在半导体器件和半导体器件的制造方法中，在衬底上形成具有突出的上部的预备隔离区以限定有源区。在有源区上形成绝缘层之后，在绝缘层上形成第一导电层。去除预分离区域的突出的上部，以在衬底上形成隔离区域并暴露第一导电层的侧壁，并且补偿构件形成在绝缘层的边缘部分上。补偿构件可以补充绝缘层的边缘部分，该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄，并且可以防止绝缘层的劣化。此外，具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。因此，半导体器件可以具有改善的电特性和可靠性。

55. 发明申请

US20060228841A1 Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices 有权
标题翻译：形成薄膜结构的方法，制造使用其的非易失性半导体器件的制造方法以及所得的非易失性半导体器件
公开(公告)号：US20060228841A1
公开(公告)日：2006-10-12
申请号：US11399670
申请日：2006-04-06
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11568
摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
摘要翻译：在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

56. 发明授权

US06624496B2 Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer 有权
公开(公告)号：US06624496B2
公开(公告)日：2003-09-23
申请号：US10044991
申请日：2002-01-15
申请人： Ja-Hum Ku , Dong-Ho Ahn , Chul-Sung Kim , Jae-Yoon Yoo , Sug-Hun Hong , Chul-Joon Choi
发明人： Ja-Hum Ku , Dong-Ho Ahn , Chul-Sung Kim , Jae-Yoon Yoo , Sug-Hun Hong , Chul-Joon Choi
IPC分类号： H01L2176
CPC分类号： H01L29/66598 , H01L21/28518 , H01L21/76232 , H01L21/823481 , H01L29/41783 , H01L29/665 , H01L29/66636
摘要： A method of forming a T-shaped isolation layer, a method of forming an elevated salicide source/drain region using the same, and a semiconductor device having the T-shaped isolation layer are provided. In the method of forming the T-shaped isolation layer, an isolation layer having a narrow trench region in the lower portion thereof and a wide trench region in the upper portion thereof is formed on a semiconductor substrate. Also, in the method of forming the elevated salicide source/drain region, the method of forming the T-shaped isolation layer is used. In particular, conductive impurities can also be implanted into the lower portion of the wide trench region which constitutes the head of the T-shaped isolation layer and is extended to both sides from the upper end of the narrow trench region by controlling the depth of the wide trench region in an ion implantation step for forming the source/drain region.

57. 发明授权

US06442487B2 Reliability measures for statistical prediction of geophysical and geological parameters in geophysical prospecting 有权
标题翻译：地球物理勘探地球物理和地质参数统计预报的可靠性测度
公开(公告)号：US06442487B2
公开(公告)日：2002-08-27
申请号：US09729576
申请日：2000-12-04
申请人： Chul-Sung Kim
发明人： Chul-Sung Kim
IPC分类号： G01V150
CPC分类号： G01V1/50 , G01V1/32
摘要： A method for assessing reliability of a prediction model constructed from N training data attribute vectors and N associated observed values of a specified parameter. Each training data attribute vector includes seismic attributes obtained from seismic data traces located at or near a well and each associated observed value is obtained from well log or core data from the well. A predicted value of the specified parameter is determined for each of the N training data attribute vectors, from the training data attribute vectors and the prediction model. A residual is determined for each of the N training data attribute vectors, as the difference between the associated observed value and the predicted value of the specified parameter for the training data attribute vector. An attribute vector for the designated location is determined.
摘要翻译：一种用于评估由N个训练数据属性向量和指定参数的N个相关观察值构建的预测模型的可靠性的方法。每个训练数据属性向量包括从位于井或井附近的地震数据轨迹获得的地震属性，并且每个相关联的观测值从井的井测井或岩心数据获得。根据训练数据属性向量和预测模型，针对N个训练数据属性向量中的每一个确定指定参数的预测值。确定N个训练数据属性向量中的每一个的残差作为训练数据属性向量的相关观测值与指定参数的预测值之间的差。确定指定位置的属性向量。

58. 发明授权

US5704713A Reconstruction of geologic thermal histories 失效
标题翻译：地质热历史重建
公开(公告)号：US5704713A
公开(公告)日：1998-01-06
申请号：US694060
申请日：1996-08-08
申请人： Chul-Sung Kim , William S. Clendenen , Christopher S. Tapscott , William R. James , William G. Powell
发明人： Chul-Sung Kim , William S. Clendenen , Christopher S. Tapscott , William R. James , William G. Powell
IPC分类号： G01K3/04 , G01K11/00 , G01K13/00
CPC分类号： G01K3/04
摘要： The invention relates to a multivariate method of inverting paleothermometer and age indicator data to derive the temperature history of rocks. The method uses kinetic models of geologic material transformations and a simple but flexible representation of bed temperature history to invert the paleothermometer data. The method inverts the data by employing a genetic algorithm computation and kinetic model S. The result is a family of temperature histories which more accurately and more completely characterize temperature histories consistent with the rock samples than is possible by prior art methods.
摘要翻译：本发明涉及一种多变量方法，用于反演气温计和年龄指标数据，以得出岩石的温度历史。该方法使用地质材料转化的动力学模型和床温历史的简单但灵活的表示来反演淡热计的数据。该方法通过使用遗传算法计算和动力学模型S来反转数据。结果是一个温度历史族，其比由现有技术方法更可靠地更准确地并且更完全地表征与岩石样本一致的温度历史。

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