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51. 发明申请

US20160133767A1 SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION 审中-公开
公开(公告)号：US20160133767A1
公开(公告)日：2016-05-12
申请号：US15000492
申请日：2016-01-19
申请人： David D. Smith , Timothy Weidman , Staffan Westerberg
发明人： David D. Smith , Timothy Weidman , Staffan Westerberg
IPC分类号： H01L31/0368 , H01L31/0224 , H01L31/0236 , H01L31/18 , H01L31/0288
CPC分类号： H01L31/03685 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0288 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/1824 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

52. 发明申请

US20150162484A1 Solar Cell Emitter Region Fabrication Using Self-Aligned Implant and Cap 有权
标题翻译：太阳能电池发射体区域使用自对准植入物和帽子制造
公开(公告)号：US20150162484A1
公开(公告)日：2015-06-11
申请号：US14100540
申请日：2013-12-09
申请人： Timothy Weidman
发明人： Timothy Weidman
IPC分类号： H01L31/18 , C23C16/50 , C23C16/04 , C23C14/22 , C23C16/44 , C23C14/04 , H01L31/068 , C23C14/48
CPC分类号： H01L31/022433 , H01L31/02167 , H01L31/022441 , H01L31/028 , H01L31/035272 , H01L31/03682 , H01L31/04 , H01L31/068 , H01L31/182 , H01L31/1876 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.
摘要翻译：描述了使用自对准植入物和盖子制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。在一个实例中，制造太阳能电池的发射极区域的方法包括在衬底上形成硅层。该方法还涉及通过模板掩模注入硅层中的掺杂剂杂质原子以形成具有相邻非注入区域的硅层的注入区域。该方法还涉及通过模板掩模形成在硅层的注入区域上并基本上与硅层的注入区域基本上对准的覆盖层。该方法还涉及去除硅层的非注入区域，其中封盖层在去除期间保护硅层的注入区域。该方法还包括退火硅层的注入区域以形成掺杂的多晶硅发射极区域。

53. 发明授权

US07601264B2 Method for treatment of plating solutions 失效
标题翻译：电镀液处理方法
公开(公告)号：US07601264B2
公开(公告)日：2009-10-13
申请号：US11538467
申请日：2006-10-04
申请人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
发明人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
IPC分类号： C02F1/28 , C02F1/42
CPC分类号： C23C18/1617 , C02F1/42 , C25D21/22 , Y10S210/912
摘要： Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.
摘要翻译：本文的实施方案提供了用于处理源自贫化或使用的电镀溶液的废溶液的废物消除装置和方法，例如来自无电镀沉积工艺或电化学电镀工艺。废物消除系统和方法可用于通过降低溶解在废液中的金属离子或还原剂的浓度（如果不是完全除去）来处理废溶液。在脱金属过程的一个实施方案中，废溶液可能暴露于包含在浸没池内的加热元件（例如铜线圈）。在另一个实施方案中，废液可以暴露于浸渍槽内具有高表面积的催化剂（例如，钢丝绒或其它金属羊毛）。在另一个实施例中，废溶液可以流过具有内部催化表面的可移除的催化导管（例如铜管）。

54. 发明授权

US07547569B2 Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process 失效
标题翻译：使用蚀刻工艺在包括CIGS材料的光伏器件中图案化Mo层的方法
公开(公告)号：US07547569B2
公开(公告)日：2009-06-16
申请号：US11562573
申请日：2006-11-22
申请人： Timothy Weidman , Li Xu , Peter G. Borden
发明人： Timothy Weidman , Li Xu , Peter G. Borden
IPC分类号： H01L21/00 , H01L21/06
CPC分类号： H01L31/0749 , H01L31/03923 , H01L31/0465 , H01L31/18 , Y02E10/541
摘要： A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
摘要翻译：本文所述的处理方法提供了一种图案化MoSe 2和/或Mo材料的方法，例如薄膜结构中的这种材料层。根据一个方面，本发明涉及可以有效地通过Mo和/或MoSe2蚀刻的蚀刻溶液。根据另一方面，本发明涉及当这种材料在薄膜光伏器件中用其它材料加工时蚀刻这种材料。根据其它方面，本发明包括在整个工艺流程中对具有选择性的CIGS材料的Mo和/或MoSe2进行蚀刻的工艺。根据另外的方面，本发明涉及可用于在光伏器件中形成光伏电池和/或互连和测试结构的整体光刻工艺中的Mo和/或MoSe2蚀刻溶液。

55. 发明授权

US07381052B2 Apparatus and method for heating substrates 失效
标题翻译：用于加热基材的装置和方法
公开(公告)号：US07381052B2
公开(公告)日：2008-06-03
申请号：US11445630
申请日：2006-06-02
申请人： Jun Zhao , David Quach , Timothy Weidman , Rick J. Roberts , Farhad Moghadam , Dan Maydan
发明人： Jun Zhao , David Quach , Timothy Weidman , Rick J. Roberts , Farhad Moghadam , Dan Maydan
IPC分类号： C23C16/04
CPC分类号： H01L21/67109 , Y10S414/139
摘要： An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.
摘要翻译：公开了一种处理衬底的设备。在一个实施例中，该装置包括外壳和壳体中的多个堆叠的电池结构。致动器适于在堆叠的电池结构中的衬底被加热的同时将多个堆叠的电池结构移动到壳体内部。

56. 发明申请

US20070275569A1 METHODS AND APPARATUS FOR E-BEAM TREATMENT USED TO FABRICATE INTEGRATED CIRCUIT DEVICES 审中-公开
标题翻译：用于制造集成电路设备的电子束处理的方法和装置
公开(公告)号：US20070275569A1
公开(公告)日：2007-11-29
申请号：US11838742
申请日：2007-08-14
申请人： FARHAD MOGHADAM , Jun Zhao , Timothy Weidman , Rick Roberts , Li-Qun Xia , Alexandros Demos
发明人： FARHAD MOGHADAM , Jun Zhao , Timothy Weidman , Rick Roberts , Li-Qun Xia , Alexandros Demos
IPC分类号： H01L21/31
CPC分类号： B05D1/60 , B05D3/068 , B05D3/141 , B05D5/08 , B05D5/12 , C08G77/50 , C23C16/26 , C23C16/401 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02129 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/0276 , H01L21/0277 , H01L21/0337 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/3146 , H01L21/3148 , H01L21/316 , H01L21/31625 , H01L21/31633 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76829
摘要： One embodiment of the present invention is a method for fabricating a dielectric film, comprising chemical vapor depositing a dielectric film, and curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising one or more organo-silicon compounds and one or more carbon-carbon bond containing hydrocarbon compounds.
摘要翻译：本发明的一个实施例是一种用于制造电介质膜的方法，包括化学气相沉积电介质膜和固化电介质膜，其中电介质膜包括硅和碳，并且化学气相沉积利用包含一个或多个有机硅化合物和一种或多种含碳 - 碳键的烃化合物。

57. 发明授权

US07256139B2 Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices 有权
标题翻译：用于制造集成电路器件的电子束处理方法和装置
公开(公告)号：US07256139B2
公开(公告)日：2007-08-14
申请号：US11045650
申请日：2005-01-28
申请人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick J. Roberts , Li-Quan Xia , Alexandros T. Demos
发明人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick J. Roberts , Li-Quan Xia , Alexandros T. Demos
IPC分类号： H01L21/31
CPC分类号： B05D1/60 , B05D3/068 , B05D3/141 , B05D5/08 , B05D5/12 , C08G77/50 , C23C16/26 , C23C16/401 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02129 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/0276 , H01L21/0277 , H01L21/0337 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/3146 , H01L21/3148 , H01L21/316 , H01L21/31625 , H01L21/31633 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76829
摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
摘要翻译：本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

58. 发明申请

US20070099806A1 Composition and method for selectively removing native oxide from silicon-containing surfaces 审中-公开
标题翻译：从含硅表面选择性去除天然氧化物的组合物和方法
公开(公告)号：US20070099806A1
公开(公告)日：2007-05-03
申请号：US11385041
申请日：2006-03-20
申请人： Michael Stewart , Timothy Weidman
发明人： Michael Stewart , Timothy Weidman
IPC分类号： C11D7/32
CPC分类号： C11D7/08 , C11D7/3218 , C11D11/0047 , H01L21/02063 , H01L21/28518 , H01L21/76814
摘要： Embodiments of the invention are provided which include compositions of buffered oxide etch (BOE) solutions and methods that use the BOE solutions during a process to selectively remove a native oxide layer from a substrate surface containing thermal oxide layers. The BOE solutions generally contain HF and alkanolamine compounds. The viscosity of the BOE solution may be adjusted by varying a concentration ratio of at least two alkanolamine compounds. In one example, a BOE solution is provided which includes, by weight, a first alkanolamine concentration within a range from about 0.5% to about 10%, a second alkanolamine concentration within a range from about 0.5% to about 10%, a HF concentration within a range from about 0.5% to about 10%, a water concentration within a range from about 80% to about 98%, a pH value within a range from about 3.5 to about 5, and a viscosity within a range from about 10 cP to about 30 cP.
摘要翻译：提供本发明的实施方案，其包括缓冲氧化物蚀刻（BOE）溶液的组合物和在工艺期间使用BOE溶液从含有热氧化物层的衬底表面选择性去除自然氧化物层的方法。京东方解决方案通常含有HF和链烷醇胺化合物。可以通过改变至少两种链烷醇胺化合物的浓度比来调节BOE溶液的粘度。在一个实例中，提供BOE溶液，其包含按重量计在约0.5％至约10％的范围内的第一链烷醇胺浓度，约0.5％至约10％范围内的第二链烷醇胺浓度，HF浓度在约0.5％至约10％的范围内，水浓度在约80％至约98％的范围内，pH值在约3.5至约5的范围内，并且粘度在约10cP 至约30cP。

59. 发明申请

US20050130404A1 Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices 有权
标题翻译：用于制造集成电路器件的电子束处理方法和装置
公开(公告)号：US20050130404A1
公开(公告)日：2005-06-16
申请号：US11045650
申请日：2005-01-28
申请人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick Roberts , Li-Qun Xia , Alexandros Demos
发明人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick Roberts , Li-Qun Xia , Alexandros Demos
IPC分类号： B05D3/06 , B05D7/24 , C23C16/26 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/31 , H01L21/00 , H01L21/469 , H01L21/4763 , H01L21/84
CPC分类号： B05D1/60 , B05D3/068 , B05D3/141 , B05D5/08 , B05D5/12 , C08G77/50 , C23C16/26 , C23C16/401 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02129 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/0276 , H01L21/0277 , H01L21/0337 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/3146 , H01L21/3148 , H01L21/316 , H01L21/31625 , H01L21/31633 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76829
摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
摘要翻译：本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

60. 发明授权

US06576568B2 Ionic additives for extreme low dielectric constant chemical formulations 失效
公开(公告)号：US06576568B2
公开(公告)日：2003-06-10
申请号：US09823932
申请日：2001-03-29
申请人： Robert P Mandal , Alexandros T Demos , Timothy Weidman , Michael P Nault , Nikolaos Bekiaris , Scott J Weigel , Lee A. Senecal , James E. MacDougall , Hareesh Thridandam
发明人： Robert P Mandal , Alexandros T Demos , Timothy Weidman , Michael P Nault , Nikolaos Bekiaris , Scott J Weigel , Lee A. Senecal , James E. MacDougall , Hareesh Thridandam
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96 , Y10T428/249953 , Y10T428/249969
摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

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