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    • 54. 发明申请
    • Phase-locked loop circuit with a mixed mode loop filter
    • 具有混合模式环路滤波器的锁相环电路
    • US20070189430A1
    • 2007-08-16
    • US11354764
    • 2006-02-14
    • Chih-Chiang Chang
    • Chih-Chiang Chang
    • H03D3/24
    • H03L7/093
    • A phase-locked loop circuit includes a phase and frequency detector receiving a reference signal and an output signal of the phase-locked loop circuit for generating a detected signal representing a frequency or phase difference therebetween. A digital charge pump coupled to the phase and frequency detector generates a charge control signal in response to the detected signal. A mixed mode loop filter coupled to the digital charge pump filters the charge control signal and generates an oscillation control signal. A voltage controlled oscillator is coupled to the mixed mode loop filter for generating the output signal of the phase-locked loop circuit by adjusting its oscillation frequency in response to the oscillation control signal. The mixed mode loop filter has both digital and analog characteristics in carrying out filtering the charge control signal, thereby reducing a layout area for the same to be implemented on a semiconductor substrate.
    • 锁相环电路包括相位和频率检测器,其接收参考信号和锁相环电路的输出信号,用于产生表示其间的频率或相位差的检测信号。 耦合到相位和频率检测器的数字电荷泵响应于检测到的信号产生充电控制信号。 耦合到数字电荷泵的混合模式环路滤波器对充电控制信号进行滤波并产生振荡控制信号。 压控振荡器耦合到混合模式环路滤波器,用于通过响应于振荡控制信号调整其振荡频率来产生锁相环电路的输出信号。 混合模式环路滤波器在进行充电控制信号的滤波时具有数字和模拟特性,从而减少了要在半导体衬底上实现的布局面积。
    • 56. 发明授权
    • Array modeling for one or more analog devices
    • 一个或多个模拟设备的阵列建模
    • US09547734B2
    • 2017-01-17
    • US13596214
    • 2012-08-28
    • Yang Chung-ChiehChih-Chiang ChangChung-Ting Lu
    • Yang Chung-ChiehChih-Chiang ChangChung-Ting Lu
    • G06F17/50
    • G06F17/5036G06F17/5063G06F17/5068
    • Among other things, one or more techniques for creating an array model for analog device modeling are provided. In an embodiment, the array model represents a mean value or a standard deviation value of an analog device characteristic for an analog device based on a physical location of the analog device within a circuit layout, where the physical location is identified using a physical set of coordinates. The physical set of coordinates maps to an array set of coordinates of the array model. In this manner, a mean value and a standard deviation value are obtainable from the array model using the array set of coordinates. The mean value and the standard deviation value are usable to model the analog device, and thus a circuit within which the analog device is used, to obtain a more accurate or realistic prediction of operation or behavior, for example.
    • 提供了一种或多种用于创建用于模拟设备建模的阵列模型的技术。 在一个实施例中,阵列模型表示基于电路布局内的模拟设备的物理位置的模拟设备的模拟设备特性的平均值或标准偏差值,其中使用物理位置 坐标 物理坐标系映射到数组模型的坐标数组。 以这种方式,可以使用阵列坐标系从阵列模型中获得平均值和标准偏差值。 平均值和标准偏差值可用于对模拟装置进行建模,并因此对使用模拟装置的电路进行建模,以获得例如操作或行为的更准确或更现实的预测。
    • 57. 发明授权
    • Series FinFET implementation schemes
    • FinFET系列实施方案
    • US08659072B2
    • 2014-02-25
    • US12890084
    • 2010-09-24
    • Chiung-Ting OuChih-Chiang Chang
    • Chiung-Ting OuChih-Chiang Chang
    • H01L29/732
    • H01L27/0886H01L27/1211
    • A device includes a first semiconductor fin, and a second semiconductor fin parallel to the first semiconductor fin. A straight gate electrode is formed over the first and the second semiconductor fins, and forms a first fin field-effect transistor (FinFET) and a second FinFET with the first and the second semiconductor fins, respectively, wherein the first and the second FinFETs are of a same conductivity type. A first electrical connection is formed on a side of the straight gate electrode and coupling a first source/drain of the first FinFET to a first source/drain of the second FinFET, wherein a second source/drain of the first FinFET is not connected to a second source/drain of the second FinFET.
    • 器件包括第一半导体鳍片和平行于第一半导体鳍片的第二半导体鳍片。 在第一和第二半导体鳍片之上形成直栅电极,分别与第一和第二半导体鳍片分别形成第一鳍状场效应晶体管(FinFET)和第二FinFET,其中第一和第二鳍片FET 具有相同的导电类型。 第一电连接形成在直栅电极的一侧并将第一FinFET的第一源极/漏极耦合到第二FinFET的第一源极/漏极,其中第一FinFET的第二源极/漏极未连接到 第二个FinFET的第二个源极/漏极。