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    • 53. 发明授权
    • Method of manufacturing a semiconductor device having buried elements
with electrical characteristic
    • 具有具有电特性的埋设元件的半导体器件的制造方法
    • US5286670A
    • 1994-02-15
    • US880892
    • 1992-05-08
    • Sang-Won KangHyun-Kyu YuWon-Gu Kang
    • Sang-Won KangHyun-Kyu YuWon-Gu Kang
    • H01L21/304H01L21/02H01L21/74H01L21/762H01L21/822H01L21/8242H01L23/52H01L23/535H01L27/04H01L27/10H01L27/108H01L27/12H01L21/302
    • H01L28/20H01L21/743H01L21/76248H01L21/76251H01L23/535H01L28/40H01L2924/0002Y10S148/012Y10S148/135
    • There are disclosed a semiconductor device having electrical elements buried a SOI substrate and a manufacturing method thereof, the manufacturing method of the invention comprising the steps of: (a) forming a first isolating insulator layer at a seed wafer by using an isolation mask, depositing a second isolating insulator layer overlying the first isolating insulator layer and the seed wafer, and defining contact holes by using a contact mask to form contacts on the seed wafer; (b) depositing a first polysilicon layer on the second isolating insulator layer and the contacts and doping an impurity into the first polysilicon layer; (c) patterning the first polysilicon layer to define an electrical element, depositing an insulating layer around the electrical element, and forming a second polysilicon layer overlying the second isolating insulator layer and the insulating layer; (d) doping an impurity into the second polysilicon layer for connecting with a handling wafer, and polishing the second polysilicon layer thus doped to form a mirror surface; (e) depositing an insulating layer for connection on the handling wafer, and performing a thermal process to bond the handling wafer and the mirror surface through the insulating layer for connection; and (f) polishing the seed wafer until the first isolating insulator layer as a polishing stopper is exposed, to form the SOI substrate having an active region where a device is formed, by the invention the efficiency of chip area can be promoted.
    • 公开了一种具有掩埋SOI衬底的电气元件的半导体器件及其制造方法,本发明的制造方法包括以下步骤:(a)通过使用隔离掩模在晶种晶片上形成第一隔离绝缘体层, 覆盖所述第一隔离绝缘体层和所述晶种晶片的第二隔离绝缘体层,以及通过使用接触掩模在所述晶种晶片上形成接触来限定接触孔; (b)在所述第二隔离绝缘体层上沉积第一多晶硅层和所述接触并将杂质掺杂到所述第一多晶硅层中; (c)图案化所述第一多晶硅层以限定电元件,在所述电气元件周围沉积绝缘层,以及形成覆盖所述第二隔离绝缘体层和所述绝缘层的第二多晶硅层; (d)将杂质掺杂到所述第二多晶硅层中以与处理晶片连接,以及抛光所述掺杂的第二多晶硅层以形成镜面; (e)在所述处理晶片上沉积用于连接的绝缘层,以及执行热处理以通过所述绝缘层将所述处理晶片和所述镜表面接合以进行连接; 并且(f)研磨种子晶片直到作为抛光停止体的第一隔离绝缘体层露出为止,形成具有器件形成的有源区的SOI衬底,通过本发明可以提高芯片面积的效率。
    • 58. 发明申请
    • APPARATUS AND METHOD FOR OPERATING CHANNEL QUALITY INDICATOR CHANNEL ON SLEEP MODE IN BROADBAND WIRELESS COMMUNICATION SYSTEM
    • 宽带无线通信系统中休眠模式下使用通道质量指示器通道的装置和方法
    • US20120218929A1
    • 2012-08-30
    • US13508338
    • 2010-11-05
    • Yeong-Moon SonJeong-Ho ParkHyun-Jeong KangHyun-Kyu Yu
    • Yeong-Moon SonJeong-Ho ParkHyun-Jeong KangHyun-Kyu Yu
    • H04W52/02
    • H04L1/0027H04L1/0026H04L1/0029H04L1/003H04W52/0216Y02D70/142Y02D70/146
    • A Channel Quality Indicator (CQI) channel management in a broadband wireless communication system is provided. Operations of a base station include determining a CQI channel operation mode for a CQI channel of a terminal which enters a sleep mode; transmitting at least one message which instructs to enter the sleep mode and includes information indicating the CQI channel operation mode; and managing the CQI channel of the terminal according to the CQI channel operation mode while the terminal operates in the sleep mode. Candidates of the CQI channel operation mode include at least one of a first mode which deallocates the CQI channel in the sleep mode entry, a second mode which maintains the CQI channel in the sleep mode and forbids CQI channel allocation to other terminal during a sleep window, a third mode which deallocates the CQI channel in the sleep window entry without signaling, and a fourth mode which maintains the CQI channel in the sleep mode and allows the CQI channel allocation to other terminal during the sleep window.
    • 提供宽带无线通信系统中的信道质量指示(CQI)信道管理。 基站的动作包括:确定进入休眠模式的终端的CQI信道的CQI信道操作模式; 发送指示进入睡眠模式的至少一个消息,并且包括指示CQI信道操作模式的信息; 以及终端在睡眠模式下操作时,根据CQI信道操作模式管理终端的CQI信道。 CQI信道操作模式的候选者包括在休眠模式条目中解除分配CQI信道的第一模式中的至少一个,将睡眠模式下保持CQI信道的第二模式,并且在睡眠窗口期间禁止CQI信道分配给其他终端 ,在没有信令的情况下解除在休眠窗口条目中的CQI信道的分配的第三模式,以及在睡眠模式下将CQI信道维持在睡眠模式中并允许在睡眠窗口期间将CQI信道分配给其他终端的第四模式。