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51. 发明授权

US08369862B2 Resource allocation and power control method 有权
标题翻译：资源分配和功率控制方法
公开(公告)号：US08369862B2
公开(公告)日：2013-02-05
申请号：US12770124
申请日：2010-04-29
申请人： Hyun-Jae Kim , Sung Cheol Chang , Won-Ik Kim , Sung Kyung Kim , Chul Sik Yoon , Jee Hwan Ahn
发明人： Hyun-Jae Kim , Sung Cheol Chang , Won-Ik Kim , Sung Kyung Kim , Chul Sik Yoon , Jee Hwan Ahn
IPC分类号： H04W72/00 , H04B7/00 , H04B17/00
CPC分类号： H04W16/10 , H04W16/08 , H04W16/30 , H04W52/243 , H04W52/245
摘要： A method for controlling transmission power in a mobile communication system is provided. According to the method, a serving base station arranges a plurality of terminals in ascending order according to Carrier-to-Interference-and-Noise-Ratios (CINRs) based on the CINR measured by the plurality of terminals, classifies the plurality of terminals in one of a first group and a second group according to the order, allocates a subchannel of a data region corresponding to the first group from among a plurality of data regions included in the uplink frame to a terminal classified as the first group, and allocates a subchannel of a data region corresponding to the second group from among the data regions to a terminal classified as the second group.
摘要翻译：提供一种用于控制移动通信系统中的发送功率的方法。根据该方法，服务基站基于由多个终端测量的CINR，根据载波干扰比（CINR）按升序排列多个终端，对多个终端进行分类根据该顺序的第一组和第二组中的一个，将从上行链路帧中包括的多个数据区域中的与第一组对应的数据区域的子信道分配给分类为第一组的终端，并且分配将与第二组对应的数据区域的子信道从数据区域分配给分类为第二组的终端。

52. 发明申请

US20120163233A1 METHOD FOR TRANSMITTING ROUTING INFORMATION AND ROUTING APPARATUS IN WIRELESS NETWORK 审中-公开
标题翻译：在无线网络中传输路由信息和路由设备的方法
公开(公告)号：US20120163233A1
公开(公告)日：2012-06-28
申请号：US13295343
申请日：2011-11-14
申请人： Anseok LEE , Wooram Shin , Kwang Jae Lim , Dong Seoung Kwon , Hyun-Jae Kim
发明人： Anseok LEE , Wooram Shin , Kwang Jae Lim , Dong Seoung Kwon , Hyun-Jae Kim
IPC分类号： H04L12/28
CPC分类号： H04L12/437 , H04W40/248
摘要： The present invention relates to a method for transmitting routing information in a wireless network. More particularly, the present invention relates to a method for forwarding node link information even in an environment having a limited bandwidth for transmitting routing information. A routing apparatus according to exemplary embodiment of the present invention stores network topology information in an link information unit, generates a routing update message according to a priority of each link information, and transmitting the routing update message to a network. The priority of each link information is decided based on change in network topology, and a reception time and a transmission time of link information. Accordingly, important link information can be propagated at fast speed.
摘要翻译：本发明涉及一种在无线网络中发送路由信息的方法。更具体地，本发明涉及即使在具有用于发送路由信息的有限带宽的环境中也转发节点链路信息的方法。根据本发明的示例性实施例的路由装置将网络拓扑信息存储在链路信息单元中，根据每个链路信息的优先级生成路由更新消息，并将路由更新消息发送到网络。基于网络拓扑的变化以及链接信息的接收时间和发送时间决定各链路信息的优先级。因此，可以以快速的速度传播重要的链接信息。

53. 发明申请

US20120163171A1 ROUTING METHOD AND APPARATUS FOR SUPPORTING QoS IN WIRELESS NETWORK 审中-公开
标题翻译：无线网络支持QoS的路由方法和设备
公开(公告)号：US20120163171A1
公开(公告)日：2012-06-28
申请号：US13296497
申请日：2011-11-15
申请人： Anseok LEE , Hyun-Jae Kim , Kwang Jae Lim , Dong Seung Kwon
发明人： Anseok LEE , Hyun-Jae Kim , Kwang Jae Lim , Dong Seung Kwon
IPC分类号： H04W40/00 , H04W72/04
CPC分类号： H04L45/302 , H04W40/12
摘要： A method for routing and setting up a connection to provide Quality of Service (QoS) required in a wireless network is provided, which allows to use a path capable of providing QoS higher than a certain level between a source node and a destination node. A routing apparatus includes: a connection management unit that receives a connection setup request directed to a destination node, determines a predicted path leading to the destination node and the next node, and transmits a connection setup request to the next node; a resource allocation unit that allocates resources so as to satisfy required QoS; a routing unit that measures available QoS information of a link and enables the exchange of information of the link including the QoS information with the nodes of the network; and a routing information management unit that stores received routing information.
摘要翻译：提供了一种用于路由和建立连接以提供无线网络中所需的服务质量（QoS）的方法，其允许使用能够提供高于源节点和目的地节点之间的特定级别的QoS的路径。路由装置包括：连接管理单元，其接收针对目的地节点的连接建立请求，确定通向目的地节点和下一节点的预测路径，并向下一节点发送连接建立请求; 资源分配单元，其分配资源以满足所需的QoS; 路由单元，其测量链路的可用QoS信息，并且使得包括QoS信息的链路的信息与网络的节点交换; 以及路由信息管理单元，其存储接收到的路由信息。

54. 发明授权

US07898039B2 Non-volatile memory devices including double diffused junction regions 有权
标题翻译：包括双扩散连接区域的非易失性存储器件
公开(公告)号：US07898039B2
公开(公告)日：2011-03-01
申请号：US11675372
申请日：2007-02-15
申请人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
发明人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
IPC分类号： H01L21/70 , H01L29/76
CPC分类号： H01L27/11521 , H01L21/26586 , H01L27/115 , H01L27/11524
摘要： A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括半导体衬底上的串选择栅极和接地选择栅极，以及在串选择栅极和地选择栅极之间的衬底上的多个存储单元栅极。第一杂质区域延伸到衬底中到多个存储单元门之间的第一深度。第二杂质区域延伸到衬底中的第二深度，该第二深度大于串选择栅极与紧邻其之间的多个存储单元栅极中的第一深度之间以及在接地选择栅极和最后一个栅极选择栅极之间的第一深度与其紧邻的多个存储单元门。还讨论了相关的制造方法。

55. 发明申请

US20110028175A1 Device for managing of base station and method for managing thereof 有权
标题翻译：用于管理基站的装置及其管理方法
公开(公告)号：US20110028175A1
公开(公告)日：2011-02-03
申请号：US12799654
申请日：2010-04-29
申请人： Sung Cheol Chang , Won-Ik Kim , Sung Kyung Kim , Hyun-Jae Kim , Chul Sik Yoon , Jee Hwan Ahn
发明人： Sung Cheol Chang , Won-Ik Kim , Sung Kyung Kim , Hyun-Jae Kim , Chul Sik Yoon , Jee Hwan Ahn
IPC分类号： H04B7/00
CPC分类号： H04W24/02 , G01S5/02 , G01S5/0289 , H04W48/16 , H04W64/00 , H04W72/02 , H04W92/20
摘要： A management device of a stopping or moving base station includes: an information acquisition unit that acquires first information about wireless environment from a neighboring base station and that acquires second information about the wireless environment by connecting to a backbone network; a position estimating unit that estimates a position of the neighboring base station based on the first information; and an operation condition selection unit that selects radio resources based on at least one of the first information and the second information.
摘要翻译：停止或移动基站的管理装置包括：信息获取单元，从相邻基站获取关于无线环境的第一信息，并且通过连接到骨干网络获取关于无线环境的第二信息; 位置估计单元，基于所述第一信息来估计所述相邻基站的位置; 以及操作条件选择单元，其基于所述第一信息和所述第二信息中的至少一个来选择无线资源。

56. 发明申请

US20100069082A1 METHOD FOR CONFIGURATING A FEEDBACK REGION IN WIRELESS COMMUNICATION SYSTEM 审中-公开
标题翻译：在无线通信系统中配置反馈区域的方法
公开(公告)号：US20100069082A1
公开(公告)日：2010-03-18
申请号：US12513073
申请日：2007-10-31
申请人： Ki-Seok Kim , Hyun-Jae Kim , Seok-Jin Lee , Young-Il Kim
发明人： Ki-Seok Kim , Hyun-Jae Kim , Seok-Jin Lee , Young-Il Kim
IPC分类号： H04W72/08 , H04B17/00
CPC分类号： H04B7/15507 , H04L1/0026 , H04L1/0027 , H04L5/0091 , H04L2001/0097 , H04W84/047
摘要： Provided is a method of configuring a feedback zone in an uplink zone of a frame. This method is for transmitting feedback data in a wireless communication system. The method sets the feedback zone between a relay station (RS) and a mobile station (MS) in addition to a feedback zone between the MS and a base station (BS), thereby preventing a transmission delay of the feedback data incurred by the RS.
摘要翻译：提供了一种在帧的上行链路区域中配置反馈区域的方法。该方法用于在无线通信系统中发送反馈数据。除MS和基站（BS）之间的反馈区之外，该方法还设置中继站（RS）与移动台（MS）之间的反馈区，从而防止RS产生的反馈数据的传输延迟。

57. 发明授权

US07538349B2 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
标题翻译：具有三部分栅电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US07538349B2
公开(公告)日：2009-05-26
申请号：US11621277
申请日：2007-01-09
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

58. 发明授权

US07488633B2 Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask 有权
标题翻译：通过掩模在非晶硅衬底照射激光束来形成多晶硅的方法
公开(公告)号：US07488633B2
公开(公告)日：2009-02-10
申请号：US12016430
申请日：2008-01-18
申请人： Myung-Koo Kang , Sook-Young Kang , Hyun-Jae Kim
发明人： Myung-Koo Kang , Sook-Young Kang , Hyun-Jae Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0268 , H01L21/2026 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask.
摘要翻译：提供了一种用于将非晶硅结晶成多晶硅的掩模。掩模包括用于限定要被照射的区域的多个狭缝图案。沿着纵向第一方向形成多个狭缝图案，并且掩模沿纵向第二方向移动。第一纵向方向基本上垂直于第二纵向方向。每个分割图案与另一个分开的图案偏离大致相同的距离。因此，使用掩模的多晶硅。

59. 发明申请

US20070187846A1 MASK FOR CRYSTALLIZING POLYSILICON AND A METHOD FOR FORMING THIN FILM TRANSISTOR USING THE MASK 有权
标题翻译：用于晶体结晶的掩模和使用掩模形成薄膜晶体管的方法
公开(公告)号：US20070187846A1
公开(公告)日：2007-08-16
申请号：US11737245
申请日：2007-04-19
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang
IPC分类号： H01L21/027
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0268 , H01L21/2026 , H01L29/66757 , H01L29/78675 , Y10S260/35
摘要： A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while baring the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line. The slit patterns arranged at the respective slit regions in the vertical direction are spaced from each other with a distance 8*d. Alternatively, the first to fourth slit regions may be arranged in reverse order, or in the vertical direction.
摘要翻译：用于形成多晶硅的掩模具有第一狭缝区域，其中垂直方向上布置多个水平狭缝图案，同时承载相同的宽度;第二狭缝区域，其中沿垂直方向布置多个水平狭缝图案，同时使其相同宽度，在垂直方向上布置多个水平狭缝图案同时具有相同宽度的第三狭缝区域，以及沿垂直方向布置多个水平狭缝图案的第四狭缝区域，同时承载相同的宽度。布置在第一至第四狭缝区域的狭缝图案在第一狭缝区域上与狭缝图案的宽度d成一定比例地沿水平方向的宽度依次增大。沿水平方向布置在第一至第四狭缝区域处的狭缝图案的中心位于相同的线上。在垂直方向的各个狭缝区域上排列的狭缝图案间隔8 * d。或者，第一至第四狭缝区域可以以相反的顺序或在垂直方向上布置。

60. 发明授权

US07011911B2 Mask for polycrystallization and method of manufacturing thin film transistor using polycrystallization mask 有权
标题翻译：多结晶掩模和使用多结晶掩模制造薄膜晶体管的方法
公开(公告)号：US07011911B2
公开(公告)日：2006-03-14
申请号：US10663081
申请日：2003-09-16
申请人： Hyun-Jae Kim , Sook-Young Kang , Myung-Koo Kang
发明人： Hyun-Jae Kim , Sook-Young Kang , Myung-Koo Kang
IPC分类号： G03F9/00
CPC分类号： H01L29/66757 , H01L29/78675
摘要： In a method of manufacturing a thin film transistor according to the present invention, an amorphous silicon thin film is firstly formed on an insulating substrate and a planarization layer is formed thereon. Thereafter, the amorphous silicon thin film is crystallized by a solidification process using a laser-irradiation to form a polysilicon thin film. Next, the polysilicon thin film and the planarization layer are patterned to form a semiconductor layer, and a gate insulating layer covering the semiconductor layer is formed. Then, a gate electrode is formed on the gate insulating layer opposite the semiconductor layer. Next, impurities are implanted into the semiconductor layer to form a source region and a drain region opposite each other with respect to the gate electrode, and a source electrode and a drain electrode electrically connected to the source region and the drain region, respectively, are formed.
摘要翻译：在本发明的薄膜晶体管的制造方法中，首先在绝缘基板上形成非晶硅薄膜，在其上形成平坦化层。此后，通过使用激光照射的固化工艺使非晶硅薄膜结晶，形成多晶硅薄膜。接下来，对多晶硅薄膜和平坦化层进行构图以形成半导体层，并且形成覆盖半导体层的栅极绝缘层。然后，在与半导体层相对的栅极绝缘层上形成栅电极。接下来，将杂质注入到半导体层中以形成相对于栅极彼此相对的源极区域和漏极区域，并且分别与源极区域和漏极区域电连接的源极电极和漏极电极是形成。

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