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    • 54. 发明申请
    • System for providing media service using sensor network and metadata
    • 使用传感器网络和元数据提供媒体服务的系统
    • US20060224619A1
    • 2006-10-05
    • US11182950
    • 2005-07-18
    • Jeong KangByeong ChoiByung ParkJe KimMin Lee
    • Jeong KangByeong ChoiByung ParkJe KimMin Lee
    • G06F17/00
    • H04L12/2809H04L2012/2841H04N21/4147H04N21/6125
    • Disclosed herein is a system for providing media service using a sensor network and metadata. The sensor network includes a plurality of sensor network nodes connected to a media server and one or more media devices, respectively. The media server includes a media information storage unit, a sensor interface unit, a metadata storage unit, a content selection unit and a content transmission unit. The media device includes a content reception unit, a sensor interface unit and a metadata storage unit. The sensor network nodes each include a network interface unit, a device interface unit and a metadata storage unit. In detail, the metadata are input to the corresponding sensor network node, media content desired by a user is intelligently retrieved based on the metadata, and the media content desired by the user is provided to the media device desired by the user, including a mobile media device in the user's possession, at a time desired by the user.
    • 本文公开了一种使用传感器网络和元数据提供媒体服务的系统。 传感器网络包括分别连接到媒体服务器和一个或多个媒体设备的多个传感器网络节点。 媒体服务器包括媒体信息存储单元,传感器接口单元,元数据存储单元,内容选择单元和内容传输单元。 媒体设备包括内容接收单元,传感器接口单元和元数据存储单元。 传感器网络节点各自包括网络接口单元,设备接口单元和元数据存储单元。 详细地,将元数据输入到相应的传感器网络节点,基于元数据智能地检索用户期望的媒体内容,并且将用户期望的媒体内容提供给用户期望的媒体设备,包括移动 用户拥有的媒体设备,在用户期望的时间。
    • 56. 发明申请
    • Method of forming gate oxide layer in semiconductor device
    • 在半导体器件中形成栅氧化层的方法
    • US20050048723A1
    • 2005-03-03
    • US10880691
    • 2004-06-30
    • Min LeeHee ChangJum KimJung Ahn
    • Min LeeHee ChangJum KimJung Ahn
    • H01L21/336H01L21/316H01L21/8234H01L21/8247H01L27/088H01L27/105
    • H01L27/11526H01L21/823462H01L27/105H01L27/11534Y10S438/981
    • Provided is related to a method of forming a semiconductor device comprises steps of: providing a semiconductor substrate having a low voltage region and a high voltage region; forming a pad oxide layer and a pad nitride layer in sequence on the semiconductor substrate; removing the pad nitride layer and the pad oxide layer on the semiconductor substrate of the high voltage region, wherein a surface of the semiconductor substrate of the high voltage region is exposed and recessed; forming a sacrificial oxide layer on the surface of the semiconductor substrate of the high voltage region; removing the sacrificial layer; forming a first gate oxide layer on the surface of the semiconductor substrate of the high voltage region; removing the pad oxide layer and the pad nitride layer left on the semiconductor substrate of the low voltage region, wherein a surface of the semiconductor substrate of the low voltage region is exposed and recessed; and forming a second gate oxide layer on the first gate oxide layer and the surface of the semiconductor substrate of the low voltage region.
    • 提供一种形成半导体器件的方法,包括以下步骤:提供具有低电压区域和高电压区域的半导体衬底; 在半导体衬底上依次形成焊盘氧化物层和焊盘氮化物层; 去除高电压区域的半导体衬底上的衬垫氮化物层和衬垫氧化物层,其中高压区域的半导体衬底的表面被暴露和凹陷; 在高电压区域的半导体衬底的表面上形成牺牲氧化物层; 去除牺牲层; 在所述高电压区域的半导体衬底的表面上形成第一栅氧化层; 去除低电压区域的半导体衬底上留下的衬垫氧化物层和衬垫氮化物层,其中低电压区域的半导体衬底的表面露出并凹陷; 以及在所述第一栅极氧化物层和所述低电压区域的所述半导体衬底的表面上形成第二栅极氧化物层。