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51. 发明授权

US08748861B2 Compound semiconductor device and method for manufacturing the same 有权
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US08748861B2
公开(公告)日：2014-06-10
申请号：US13587051
申请日：2012-08-16
申请人： Atsushi Yamada
发明人： Atsushi Yamada
IPC分类号： H01L29/06 , H01L29/267
CPC分类号： H02M7/537 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66431 , H01L29/66462 , H01L29/7787 , H03F1/3247 , H03F2200/204 , H03F2200/541
摘要： An AlGaN/GaN-HEMT has a structure including: compound semiconductor layers formed on a substrate; a gate electrode, a gate pad that has a current path formed between the gate electrode and itself, and a semiconductor layer that is spontaneously polarized and piezoelectrically polarized, which are formed on the compound semiconductor layer; and a gate electrode connection layer formed on the semiconductor layer, wherein the gate electrode connection layer and the gate electrode are electrically connected with each other. This structure which is relatively simple allows the AlGaN/GaN-HEMT to realize an intended normally-off operation without causing such inconveniences as increase in a sheet resistance, increase in an on-resistance, and increase in a leakage current.
摘要翻译： AlGaN / GaN-HEMT具有包括：形成在基板上的化合物半导体层的结构; 栅电极，形成在栅电极和本身之间的电流通路的栅极焊盘和形成在化合物半导体层上的自发极化和压电极化的半导体层; 以及形成在所述半导体层上的栅电极连接层，其中所述栅电极连接层和所述栅电极彼此电连接。这种相对简单的结构允许AlGaN / GaN-HEMT实现预期的常关断操作，而不会引起诸如薄层电阻增加，导通电阻增加和漏电流增加的不便。

52. 发明申请

US20130292926A1 COVER AND AIRBAG DEVICE 有权
标题翻译：盖子和安全气囊装置
公开(公告)号：US20130292926A1
公开(公告)日：2013-11-07
申请号：US13980163
申请日：2012-01-17
申请人： Minhun Kim , Jinhua Piao , Atsushi Yamada
发明人： Minhun Kim , Jinhua Piao , Atsushi Yamada
IPC分类号： B60R21/213
CPC分类号： B60R21/213 , B60R21/237 , B60R2021/161
摘要： A cover used for an airbag device capable of accurately and easily adjusting a deployment direction of an airbag during a side collision according to a deployment position. The cover includes a protecting portion formed along a rolled airbag, and a plurality of attachment portions formed so as to be attached to a body of a vehicle. The protecting portion includes a slit capable of controlling the deployment direction of the airbag by changing a position through which the tab passes toward the body of the vehicle in a rolling direction of the airbag.
摘要翻译：一种用于安全气囊装置的盖子，其能够根据展开位置在侧面碰撞期间准确且容易地调整气囊的展开方向。所述盖包括沿着滚动的安全气囊形成的保护部分，以及形成为附接到车辆本体的多个附接部分。保护部包括能够通过改变突片在气囊的滚动方向上朝向车身行进的位置的变化来控制安全气囊的展开方向的狭缝。

53. 发明申请

US20130146928A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20130146928A1
公开(公告)日：2013-06-13
申请号：US13818167
申请日：2012-03-05
申请人： Akira Inoue , Toshiya Yokogawa , Atsushi Yamada , Masaki Fujikane
发明人： Akira Inoue , Toshiya Yokogawa , Atsushi Yamada , Masaki Fujikane
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/0095 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/54 , H01L2224/14 , H01L2224/16225
摘要： A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.

54. 发明授权

US08441108B2 Nitride semiconductor element having electrode on m-plane and method for producing the same 有权
标题翻译：在m面上具有电极的氮化物半导体元件及其制造方法
公开(公告)号：US08441108B2
公开(公告)日：2013-05-14
申请号：US12993305
申请日：2010-03-16
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L29/04
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

55. 发明授权

US08421054B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08421054B2
公开(公告)日：2013-04-16
申请号：US13351452
申请日：2012-01-17
申请人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
发明人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： H01L29/04 , H01L29/26
CPC分类号： H01L33/382 , H01L33/16 , H01L33/32
摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.
摘要翻译：发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

56. 发明申请

US20130076442A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20130076442A1
公开(公告)日：2013-03-28
申请号：US13545163
申请日：2012-07-10
申请人： Norikazu Nakamura , Atsushi Yamada , Shiro Ozaki , Kenji Imanishi
发明人： Norikazu Nakamura , Atsushi Yamada , Shiro Ozaki , Kenji Imanishi
IPC分类号： H03F3/16 , H01L21/335 , H01L29/778
CPC分类号： H01L29/0607 , H01L21/02115 , H01L21/02266 , H01L21/02381 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L29/2003 , H01L29/41766 , H01L29/66462 , H01L29/778 , H01L29/7787 , H03F1/3247 , H03F3/19 , H03F3/245
摘要： An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and an amorphous insulating film formed between the substrate and the compound semiconductor stacked structure.

57. 发明申请

US20120208351A1 CLEANING APPARATUS FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：用于半导体制造装置的清洁装置及使用其制造半导体装置的方法
公开(公告)号：US20120208351A1
公开(公告)日：2012-08-16
申请号：US13357887
申请日：2012-01-25
申请人： Norikazu Nakamura , Atsushi Yamada , Masayuki Takeda , Keiji Watanabe , Kenji Imanishi
发明人： Norikazu Nakamura , Atsushi Yamada , Masayuki Takeda , Keiji Watanabe , Kenji Imanishi
IPC分类号： B08B7/04 , B08B13/00 , B08B5/00 , H01L21/20
CPC分类号： H01L29/66462 , C11D11/0041 , C23C16/4405
摘要： A cleaning apparatus for a semiconductor manufacturing apparatus includes: a oxide removal unit that removes an oxide over a surface of a deposit adhered to components of the semiconductor manufacturing apparatus, and a deposit removal unit that removes the deposit after the oxide over the surface is removed by the oxide removal unit.
摘要翻译：用于半导体制造装置的清洁装置包括：氧化物去除单元，其去除附着在半导体制造装置的部件上的沉积物的表面上的氧化物;以及去除在表面上的氧化物之后去除沉积物的沉积物去除单元通过氧化物去除单元。

58. 发明申请

US20120138955A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120138955A1
公开(公告)日：2012-06-07
申请号：US13289314
申请日：2011-11-04
申请人： Tetsuro ISHIGURO , Atsushi Yamada
发明人： Tetsuro ISHIGURO , Atsushi Yamada
IPC分类号： H01L29/16 , H01L21/20 , H01L29/201
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： A compound semiconductor device includes a substrate; an initial layer formed over the substrate; and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor. The initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
摘要翻译：化合物半导体器件包括：衬底; 在衬底上形成的初始层; 以及在初始层上形成并含有III-V族化合物半导体的芯层。初始层是包含在芯层中的III-V族化合物半导体的III族原子层。

59. 发明申请

US20120113656A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20120113656A1
公开(公告)日：2012-05-10
申请号：US13351452
申请日：2012-01-17
申请人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
发明人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： F21V21/00 , H01L33/38
CPC分类号： H01L33/382 , H01L33/16 , H01L33/32
摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.
摘要翻译：发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

60. 发明授权

US08168098B2 Method of injection molding thermoplastic resin using supercritical fluid and injection molding apparatus 有权
标题翻译：使用超临界流体和注射成型设备注塑热塑性树脂的方法
公开(公告)号：US08168098B2
公开(公告)日：2012-05-01
申请号：US11598054
申请日：2006-11-13
申请人： Atsushi Yusa , Yoshiyuki Nomura , Atsushi Yamada
发明人： Atsushi Yusa , Yoshiyuki Nomura , Atsushi Yamada
IPC分类号： B29C44/04 , B29C44/10
CPC分类号： B29C45/0013 , B29C45/0053 , B29C45/1706 , B29C45/1816 , B29C2045/1702 , B29C2045/1722 , Y10S264/14
摘要： The present invention provides an injection molding method capable of impregnating a supercritical fluid stably and partially in molten resin in a plasticizing cylinder of an injection molding apparatus. The above object is achieved by providing the method of injection molding which includes measuring a filling amount of the molten resin in the plasticizing cylinder, introducing a supercritical fluid into the molten resin in the plasticizing cylinder while moving back the screw by a predetermined distance without rotating the screw from a position of the screw at the time of completing the measuring, detecting a pressure of the molten resin, and determining based on the pressure an injection start position for the screw.
摘要翻译：本发明提供一种注射成型方法，其能够在注射成型装置的增塑圆筒中将超临界流体稳定地和部分浸渍在熔融树脂中。上述目的是通过提供注射成型方法来实现的，该方法包括测量塑化缸中的熔融树脂的填充量，将超临界流体引入塑化缸中的熔融树脂中，同时使螺杆向后移动预定距离而不旋转螺杆在完成测量时从螺杆的位置检测熔融树脂的压力，并根据压力确定螺杆的注射开始位置。

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