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    • 57. 发明授权
    • Redundancy circuitry for logic circuits
    • 用于逻辑电路的冗余电路
    • US6091258A
    • 2000-07-18
    • US433544
    • 1999-11-03
    • Cameron McClintockAndy L. LeeRichard G. Cliff
    • Cameron McClintockAndy L. LeeRichard G. Cliff
    • G06F11/20G11C29/00H03K19/177H03K19/003H03K19/173
    • H03K19/17764G11C29/808H03K19/17728
    • Redundant circuitry for a logic circuit such as a programmable logic device is provided. The redundant circuitry allows the logic circuit to be repaired by replacing a defective logic area on the circuit with a redundant logic circuit. Rows and columns of logic areas may be logically remapped by row and column swapping. The logic circuit contains dynamic control circuitry for directing programming data to various logic areas on the circuit in an order defined by redundancy configuration data. Redundancy may be implemented using either fully or partially redundant logic areas. Logic areas may be swapped to remap a partially redundant logic area onto a logic area containing a defect. The defect may then be repaired using row or column swapping or shifting. A logic circuit containing folded rows of logic areas may be repaired by replacing a defective half-row with a redundant half-row.
    • 提供了诸如可编程逻辑器件之类的逻辑电路的冗余电路。 冗余电路允许通过用冗余逻辑电路替换电路上的故障逻辑区域来修复逻辑电路。 逻辑区域的行和列可以通过行和列交换逻辑地重新映射。 逻辑电路包含动态控制电路,用于以由冗余配置数据定义的顺序将编程数据引导到电路上的各种逻辑区域。 可以使用完全或部分冗余的逻辑区域实现冗余。 可以交换逻辑区域以将部分冗余的逻辑区域重新映射到包含缺陷的逻辑区域。 然后可以使用行或列交换或移位来修复缺陷。 可以通过用冗余半行代替缺陷半行来修复包含折叠行的逻辑区域的逻辑电路。
    • 58. 发明授权
    • First-in-first-out memory with dual memory banks
    • 先进先出的双存储器存储器
    • US09501407B1
    • 2016-11-22
    • US13235228
    • 2011-09-16
    • Ray Ruey-Hsien HuAndy L. LeeDavid LewisTony NgaiHaiming YuHao-Yuan Howard Chou
    • Ray Ruey-Hsien HuAndy L. LeeDavid LewisTony NgaiHaiming YuHao-Yuan Howard Chou
    • G06F12/06G06F13/16
    • G06F12/0607G06F13/1689Y02D10/14
    • A first-in-first-out memory may have first and second memory banks. A write controller may write data into the first and second memory banks. In performing write operations, the write controller may determine whether to write the data into the first bank or the second bank by evaluating a first bank empty flag and a second bank empty flag. When transitioning between writing in the first bank and the second bank, the write controller may latch a write address value indicative of the last location at which valid data was written in a given bank. A read controller may read data from the first and second memory bank. The read controller may determine when to transition between reading in the first bank and reading in the second bank by comparing a current read address to the latched write address value.
    • 先入先出的存储器可以具有第一和第二存储体。 写控制器可以将数据写入第一和第二存储体。 在执行写入操作时,写入控制器可以通过评估第一存储体空标志和第二存储体空标志来确定是否将数据写入第一存储体或第二存储体。 当在第一组和第二组中的写入之间转换时,写入控制器可以锁存指示在给定存储体中写入有效数据的最后位置的写入地址值。 读取控制器可以从第一和第二存储体读取数据。 读取控制器可以通过将当前读取地址与锁存的写入地址值进行比较来确定何时在第一存储区中的读取和第二存储区中的读取之间转换。