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51. 发明申请

US20110241222A1 Semiconductor Package and Manufacturing Method 有权
标题翻译：半导体封装和制造方法
公开(公告)号：US20110241222A1
公开(公告)日：2011-10-06
申请号：US12750969
申请日：2010-03-31
申请人： Recai Sezi , Thorsten Meyer
发明人： Recai Sezi , Thorsten Meyer
IPC分类号： H01L23/498 , H01L21/56 , H01L23/28
CPC分类号： H01L21/561 , H01L21/568 , H01L23/3128 , H01L23/3135 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/96 , H01L2224/03442 , H01L2224/03464 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/05567 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/12105 , H01L2224/13022 , H01L2224/131 , H01L2224/211 , H01L2224/221 , H01L2224/96 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3511 , H01L2224/19 , H01L2224/03 , H01L2224/11 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A polymer layer is generated on a wafer. The wafer is then separated into semiconductor chips. At least two semiconductor chips are placed on a carrier with the polymer layer facing the carrier. The at least two semiconductor chips are covered with an encapsulating material to form an encapsulant. The carrier is removed from the encapsulant, and the encapsulant and the polymer layer are thinned.
摘要翻译：在晶片上产生聚合物层。然后将晶片分离成半导体芯片。将至少两个半导体芯片放置在载体上，聚合物层面向载体。至少两个半导体芯片被封装材料覆盖以形成密封剂。载体从密封剂中除去，密封剂和聚合物层变薄。

52. 发明申请

US20110241218A1 Electronic Device and Manufacturing Method 有权
标题翻译：电子设备及制造方法
公开(公告)号：US20110241218A1
公开(公告)日：2011-10-06
申请号：US12750946
申请日：2010-03-31
申请人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
发明人： Thorsten Meyer , Rainer Leuschner , Gerald Ofner , Reinhard Hess , Recai Sezi
IPC分类号： H01L23/48 , H01L23/488 , H01L21/78 , H01L21/98
CPC分类号： H01L21/568 , H01L23/49811 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/16 , H01L2224/12105 , H01L2224/211 , H01L2224/221 , H01L2224/32225 , H01L2224/73267 , H01L2224/97 , H01L2225/1035 , H01L2225/1052 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/3511 , H01L2224/19 , H01L2924/00 , H01L2224/83 , H01L2224/82
摘要： A semiconductor package includes a semiconductor chip, an encapsulant embedding the semiconductor chip, first contact pads on a first main face of the semiconductor package and second contact pads on a second main face of the semiconductor package opposite to the first main face. The diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, wherein x is the pitch of the second contact pads in micrometers.
摘要翻译：半导体封装包括半导体芯片，将半导体芯片嵌入的密封剂，在半导体封装的第一主面上的第一接触焊盘和与第一主面相对的半导体封装的第二主面上的第二接触焊盘。第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

53. 发明申请

US20100013091A1 SEMICONDUCTOR DEVICE INCLUDING A COPOLYMER LAYER 有权
标题翻译：包含共聚物层的半导体器件
公开(公告)号：US20100013091A1
公开(公告)日：2010-01-21
申请号：US12174155
申请日：2008-07-16
申请人： Thorsten Meyer , Recai Sezi
发明人： Thorsten Meyer , Recai Sezi
IPC分类号： H01L21/768 , H01L23/498
CPC分类号： H01L24/96 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L24/19 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00
摘要： A semiconductor device including a chip including an integrated circuit, a conductive layer, a copolymer layer and metal elements. The conductive layer is disposed over the chip and electrically coupled to the integrated circuit. The copolymer is disposed on the conductive layer. The metal elements are electrically coupled to the conductive layer via through-connects in the copolymer layer.
摘要翻译：一种包括集成电路，导电层，共聚物层和金属元素的芯片的半导体器件。导电层设置在芯片上并电耦合到集成电路。共聚物设置在导电层上。金属元件通过共聚物层中的通孔电连接到导电层。

54. 发明授权

US07476412B2 Method for the metalization of an insulator and/or a dielectric 有权
公开(公告)号：US07476412B2
公开(公告)日：2009-01-13
申请号：US09817963
申请日：2001-03-27
申请人： Klaus Lowack , Günter Schmid , Recai Sezi
发明人： Klaus Lowack , Günter Schmid , Recai Sezi
IPC分类号： B05D5/12 , G03F7/00 , H01L21/00
CPC分类号： C23C18/30 , C23C18/1608 , H05K3/184 , H05K3/465 , H05K3/4661
摘要： The invention relates to a process for the metallization of an insulator and/or a dielectric, wherein the insulator is firstly activated, it is subsequently coated with another insulator and the latter is patterned, then the first is seeded and lastly metallized.

55. 发明申请

US20080265383A1 Workpiece with Semiconductor Chips, Semiconductor Device and Method for Producing a Workpiece with Semiconductor Chips 有权
标题翻译：具有半导体芯片的工件，半导体器件和用半导体芯片生产工件的方法
公开(公告)号：US20080265383A1
公开(公告)日：2008-10-30
申请号：US11939938
申请日：2007-11-14
申请人： Markus Brunnbauer , Jens Pohl , Klaus Pressel , Thorsten Meyer , Recai Sezi , Stephan Bradl , Ralf Plieninger
发明人： Markus Brunnbauer , Jens Pohl , Klaus Pressel , Thorsten Meyer , Recai Sezi , Stephan Bradl , Ralf Plieninger
IPC分类号： H01L23/552 , H01L21/56
CPC分类号： H01L23/552 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L23/60 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/05001 , H01L2224/05026 , H01L2224/05548 , H01L2224/056 , H01L2224/12105 , H01L2224/82039 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/05099
摘要： A workpiece has at least two semiconductor chips, each semiconductor chip having a first main surface, which is at least partially exposed, and a second main surface. The workpiece also comprises an electrically conducting layer, arranged on the at least two semiconductor chips, the electrically conducting layer being arranged at least on regions of the second main surface, and a molding compound, arranged on the electrically conducting layer. In the molding compound a contact via is arranged.
摘要翻译：工件具有至少两个半导体芯片，每个半导体芯片具有至少部分暴露的第一主表面和第二主表面。所述工件还包括布置在所述至少两个半导体芯片上的导电层，所述导电层至少布置在所述第二主表面的区域上，所述模制化合物布置在所述导电层上。在模塑料中配置有接触孔。

56. 发明授权

US07125814B2 Bis-o-nitrophenols derivatives and poly-o-hydroxyamides, polybenzoxazoles, materials, and microelectronic devices made therefrom 有权
公开(公告)号：US07125814B2
公开(公告)日：2006-10-24
申请号：US10244301
申请日：2002-09-16
申请人： Recai Sezi
发明人： Recai Sezi
IPC分类号： H01L21/31 , C07C69/96
CPC分类号： C07C205/43 , Y02P20/55
摘要： Materials for dielectrics and/or buffer layers in microelectronics utilize polymers can be based on bis-o-nitrophenols. The bis-o-nitrophenols carry a tert-butoxycarbonyl group on at least one of the hydroxyl groups. The polybenzoxazoles prepared from these compounds have a lower dielectric constant than corresponding polymers which are prepared from bis-o-nitrophenols that do not have a tert-butoxycarbonyl group.

57. 发明授权

US07028399B2 Wiring process 失效
公开(公告)号：US07028399B2
公开(公告)日：2006-04-18
申请号：US10145393
申请日：2002-05-14
申请人： Klaus Lowack , Guenter Schmid , Recai Sezi , Ute Zschieschang
发明人： Klaus Lowack , Guenter Schmid , Recai Sezi , Ute Zschieschang
IPC分类号： H05K3/02
CPC分类号： B82Y30/00 , H01L21/4846 , H05K3/0052 , H05K3/182 , H05K3/242 , H05K2203/175 , Y10T29/49128 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： The present invention provides a process for wiring electrical contact sites, in particular on the surface of an electronic or microelectronic component, with the following steps: applying and patterning at least one dielectric on the component surface; currentlessly depositing a conductor starting layer for producing metal wiring interconnects and substitute contact sites with short-circuit contacts for interconnecting the individual metal wiring interconnects and the corresponding electrical contact sites; reinforcing the conductor starting layer by a common electrodepositing process; and separating the short-circuit contacts for separating the electrical contact sites or the contact sites of the wiring from one another.

58. 发明授权

US07022582B2 Microelectronic process and structure 失效
标题翻译：微电子工艺与结构
公开(公告)号：US07022582B2
公开(公告)日：2006-04-04
申请号：US10631587
申请日：2003-07-31
申请人： Recai Sezi
发明人： Recai Sezi
IPC分类号： H01L21/76 , H01L21/4763
CPC分类号： H01L21/0212 , H01L21/02118 , H01L21/022 , H01L21/02282 , H01L21/31116 , H01L21/312 , H01L21/7682 , H01L21/76841
摘要： The present invention relates to a process for integrating air as dielectric in semiconductor devices, comprising the steps of: a. applying a layer of a dielectric (2) which is to be patterned to a substrate (1); b. patterning the dielectric layer (2) which has been applied; c. applying a conductor metal (3) for the patterned dielectric layer (2) and forming a common surface from the conductor metal (3) and the dielectric (2); d. applying a layer of an organic dielectric (4) to the layer produced in step c.; and e. bringing the coated substrate produced in this way into contact with a fluorine-containing compound in order to form an arrangement which has air as dielectric between conductor structures and has a continuous dielectric layer (4) on the top side, and to a semiconductor device with air layers as dielectric produced using this process.
摘要翻译：本发明涉及将空气作为电介质集成在半导体器件中的方法，包括以下步骤：a。将待图案化的电介质层（2）施加到衬底（1）上; b。图案化已经施加的介电层（2）; C。对所述图案化电介质层（2）施加导体金属（3）并从所述导体金属（3）和所述电介质（2）形成公共表面; d。将一层有机电介质（4）施加到步骤c中制备的层; 和e。将以这种方式制造的涂布基材与含氟化合物接触，以形成在导体结构之间具有作为电介质的空气的布置，并且在顶侧具有连续的电介质层（4），并且具有空气层作为使用该方法产生的电介质。

59. 发明授权

US06310238B1 O-amino(thio)phenolcarboxylic acids, and their preparation 有权
标题翻译： O-氨基（硫代）苯酚羧酸及其制备方法
公开(公告)号：US06310238B1
公开(公告)日：2001-10-30
申请号：US09161147
申请日：1998-09-24
申请人： Recai Sezi , Michael Keitmann
发明人： Recai Sezi , Michael Keitmann
IPC分类号： C07C22910
CPC分类号： C07D213/643 , C07C69/92 , C07C217/90
摘要： The invention relates to novel o-aminophenolcarboxylic acids or o-aminothiophenolcarboxylic acids of the following structure in which: A1 to A7 are—independently of one another—H, CH3, OCH3, CH2CH3 or OCH2CH3; T is O or S, and m is 0 or 1; Z is a carbocyclic or heterocyclic aromatic radical.
摘要翻译：本发明涉及以下结构的新型邻氨基苯甲酸或邻氨基苯硫酚羧酸，其中：A 1至A 7彼此独立地为H，CH 3，OCH 3，CH 2 CH 3或OCH 2 CH 3; T为O或S，m为0 或1; Z是碳环或杂环芳族基团。

60. 发明授权

US6120970A Polybenzoxazole and polybenzothiazole precursors 有权
标题翻译：聚苯并恶唑和聚苯并噻唑前体
公开(公告)号：US6120970A
公开(公告)日：2000-09-19
申请号：US161202
申请日：1998-09-25
申请人： Recai Sezi , Michael Keitmann
发明人： Recai Sezi , Michael Keitmann
IPC分类号： G03F7/032 , C08G69/32 , C08G69/42 , C08G73/22 , C08G75/32 , G03F7/023 , G03C1/52 , C08G69/00
CPC分类号： C08G75/32 , C08G73/22 , G03F7/0233
摘要： The polybenzoxazole and polybenzothiazole precursors of the invention have the following partial structure: ##STR1## where: A.sup.1 to A.sup.7 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3 ;T is O or S, and m is 1;Z is a carbocyclic or heterocyclic aromatic radical.
摘要翻译：本发明的聚苯并恶唑和聚苯并噻唑前体具有以下部分结构：其中：A 1至A 7彼此独立地为-H，F，CH 3，CF 3，OCH 3，OCF 3，CH 2 CH 3，CF 2 CF 3，OCH 2 CH 3或OCF 2 CF 3; T为O或S，m为1; Z是碳环或杂环芳族基团。

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