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51. 发明授权

US06296984B1 Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material 有权
标题翻译：能量敏感抗蚀剂材料和使用能量敏感抗蚀剂材料的器件制造方法
公开(公告)号：US06296984B1
公开(公告)日：2001-10-02
申请号：US09268448
申请日：1999-03-12
申请人： Allen H. Gabor , Francis Michael Houlihan , Omkaram Nalamasu
发明人： Allen H. Gabor , Francis Michael Houlihan , Omkaram Nalamasu
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115
摘要： A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.
摘要翻译：公开了一种在该方法中使用的器件制造和抗蚀材料的方法。抗蚀剂材料包含垂直于聚合物的酸不稳定基团或与聚合物组合的溶解抑制剂。酸不稳定基团显着降低聚合物在碱性水溶液中的溶解度。抗蚀剂材料还含有光致酸产生剂和自由基清除剂。自由基清除剂减少了在光刻过程中从抗蚀剂中脱气的芳族化合物的量。抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

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