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51. 发明授权

US06562693B2 Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding 有权
公开(公告)号：US06562693B2
公开(公告)日：2003-05-13
申请号：US09803658
申请日：2001-03-12
申请人： Hideki Ichikawa , Mamoru Okanishi , Terumitsu Santo , Toshihiko Yoshida
发明人： Hideki Ichikawa , Mamoru Okanishi , Terumitsu Santo , Toshihiko Yoshida
IPC分类号： H01L2176
CPC分类号： H01L24/85 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L2224/05599 , H01L2224/29144 , H01L2224/45015 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/49109 , H01L2224/78 , H01L2224/78301 , H01L2224/85181 , H01L2224/85205 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10336 , H01L2924/12042 , H01L2924/12043 , H01L2924/181 , H01S5/02212 , H01S5/02248 , H01S5/02276 , H01S5/0683 , H01S5/4025 , H01L2924/00 , H01L2924/20752 , H01L2924/207
摘要： There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem 100 provided with a plurality of lead pins 121 through 124, a sub-mount 160 that is die-bonded onto the stem 100 and has its surface formed integrally with a monitoring PD 140 and two semiconductor laser elements 131 and 132 that are die-bonded onto the sub-mount 160 and have emission light monitored by the monitoring PD 140. A first bonding surface i.e. anode electrode 183 of the monitoring PD 140 and a second bonding surface i.e. end surface 123a of a lead pin 123 that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

52. 发明授权

US5450237A Hyperresolution optical system 失效
标题翻译：超分辨光学系统
公开(公告)号：US5450237A
公开(公告)日：1995-09-12
申请号：US300070
申请日：1994-09-02
申请人： Toshihiko Yoshida , Osamu Yamamoto , Saburo Yamamoto , Shohichi Kato , Masumi Nakamichi , Toshimasa Hamada , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Osamu Yamamoto , Saburo Yamamoto , Shohichi Kato , Masumi Nakamichi , Toshimasa Hamada , Sadayoshi Matsui
IPC分类号： G02B27/09 , G02B27/58 , G11B7/12 , G11B7/135 , G02B27/46
CPC分类号： G11B7/1374 , G02B27/58 , G11B7/123 , G11B7/1381
摘要： A hyper-resolution optical device which can focus a beam of light to a diameter less than the diffraction limit. The optical device has an optical system disposed on a transmissive substrate. One component in the optical system is a hyper-resolution optical component which passes or reflects light and which has a central portion which does not pass or reflect light, respectively. The hyper-resolution optical component can be integrated with the transmissive substrate. Such optical devices are particularly suitable for optical pick-up devices, laser printers, sensors.
摘要翻译：可以将光束聚焦到小于衍射极限的直径的超分辨率光学装置。光学装置具有设置在透射基板上的光学系统。光学系统中的一个部件是通过或反射光的超分辨率光学部件，并且具有不分别通过或反射光的中心部分。超分辨率光学部件可以与透射基板一体化。这种光学装置特别适用于光学拾取装置，激光打印机，传感器。

53. 发明授权

US5224195A Light wavelength converter for a wavelength of laser beams into a short wavelength 失效
标题翻译：激光波长波长波长变化的光波长变换器
公开(公告)号：US5224195A
公开(公告)日：1993-06-29
申请号：US723500
申请日：1991-06-28
申请人： Toshihiko Yoshida , Masanori Watanabe , Osamu Yamamoto
发明人： Toshihiko Yoshida , Masanori Watanabe , Osamu Yamamoto
IPC分类号： G02F1/37 , G02F1/377
CPC分类号： G02F1/377 , G02F2001/374 , G02F2201/302
摘要： A light wavelength converter which includes a laser beam source for radiating fundamental waves, a first optical waveguide formed on a substrate so as to convert the fundamental waves into harmonics which are radiated through the substrate, a grating coupler provided on the substrate so as to receive the harmonics propagated through the substrate, and a second optical waveguide formed on the substrate, the second optical guide being connected to the grating coupler so as to radiate the harmonics outside.

54. 发明授权

US5130210A Stabilized zirconia solid electrolyte and process for preparation thereof 失效
标题翻译：稳定的ZIRCONIA固体电解质及其制备方法
公开(公告)号：US5130210A
公开(公告)日：1992-07-14
申请号：US571861
申请日：1990-08-24
申请人： Hiroyuki Iwasaki , Fumiya Ishizaki , Toshihiko Yoshida , Nobuaki Tagaya , Isao Mukaizawa , Hiroshi Seto
发明人： Hiroyuki Iwasaki , Fumiya Ishizaki , Toshihiko Yoshida , Nobuaki Tagaya , Isao Mukaizawa , Hiroshi Seto
IPC分类号： C01G25/02 , C04B35/486 , H01M8/12
CPC分类号： C01G25/02 , C04B35/486 , H01M8/1253 , C01P2004/61 , C01P2004/62 , C01P2006/40 , C01P2006/90 , Y02E60/525 , Y02P70/56
摘要： The mechanical strength of stabilized zirconia is improved without lowering the ion conductivity by providing a solid electrolyte comprising stabilized zirconia and a metal oxide dispersed within grains or grain boundaries of stabilized zirconia, the metal oxide having an average submicron particle size and stabilized zirconia having an average particle size larger than 1 micron, typically larger than 10 .mu.m or even 100 .mu.m.

55. 发明授权

US5025449A Optical pumping-type solid-state laser apparatus with a semiconductor laser device 失效
标题翻译：具有半导体激光装置的光泵浦式固态激光装置
公开(公告)号：US5025449A
公开(公告)日：1991-06-18
申请号：US500039
申请日：1990-03-27
申请人： Osamu Yamamoto , Toshihiko Yoshida
发明人： Osamu Yamamoto , Toshihiko Yoshida
IPC分类号： H01S3/094 , H01S3/0941 , H01S3/131 , H01S5/024 , H01S5/06 , H01S5/0683
CPC分类号： H01S5/0683 , H01S3/09415 , H01S3/09408 , H01S3/1312 , H01S5/02415 , H01S5/06837 , H01S5/0687
摘要： Disclosed is an optical pumping-type solid-state laser apparatus in which a semiconductor laser device is used as a light source for optical pumping. The solid-state laser apparatus includes first and second photodetectors. The former detects the amount of light emitted from the semiconductor laser device, and the latter detects the amount of laser light transmitted through a filter plate which has the same light-absorbance characteristics as that of the solid-state laser. In accordance with the detected results, a driving circuit drives the semiconductor laser device to obtain a laser beam with an appropriate output level and a temperature regulator regulates the temperature of the semiconductor laser device so that the wavelength of the laser light to be emitted therefrom is accurately adjusted to be the same as that of the light to be efficiently absorbed by the solid-state laser. The laser beam with the accurately adjusted wavelength is used for optically pumping the solid-state laser.

56. 发明授权

US5007694A Light wavelength converter 失效
标题翻译：光波长转换器
公开(公告)号：US5007694A
公开(公告)日：1991-04-16
申请号：US457320
申请日：1989-12-28
申请人： Osamu Yamamoto , Toshihiko Yoshida
发明人： Osamu Yamamoto , Toshihiko Yoshida
IPC分类号： G02F1/313 , G02F1/37 , G02F1/377
CPC分类号： G02F1/377
摘要： A light wavelength converter comprising a substrate that is made of a material attaining a non-linear effect; an optical waveguide that is formed within said substrate; a light source that irradiates said optical waveguide with a pair of lights having a fundamental waveguide, said pair of lights being propagated within said optical waveguide and intersecting each other within said optical waveguide to thereby generate a second harmonic light; and a light deflection means that changes the intersection angle between the pair of waveguiding lights based on an electric signal that is input into said light deflection means, whereby, the phase matching condition of a pair of incident laser beams can be readily satisfied and, even when the ambient temperature changes, the second harmonic light can be stably generated.

57. 发明授权

US4910744A Buried heterostructure semiconductor laser device 失效
标题翻译：埋地异质结半导体激光器件
公开(公告)号：US4910744A
公开(公告)日：1990-03-20
申请号：US130352
申请日：1987-12-08
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/0035 , H01S5/2277
摘要： A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves.
摘要翻译：一种半导体激光器件，包括半导体衬底，具有比所述衬底的折射率大的折射率并且具有比所述衬底的能隙小的能隙的有源层以及具有与所述衬底的导电类型不同的导电类型的覆层，导致双异质结构，其中在双异质结构中设置两个具有给定距离的平行凹槽，以便到达所述衬底和具有与所述衬底相同的导电类型的第一掩埋层，第二掩埋层具有不同于所述衬底的导电类型和具有与所述衬底相同的导电类型的第三掩埋层以该顺序布置在两个沟槽的外侧，此外，具有不同于其的导电类型的平坦表面的半导体层的所述衬底设置在所述第三掩埋层上并且位于所述两个平行的区域之间 oves。

58. 发明授权

US4806454A Method for the formation of a diffraction grating 失效
$Method for the formation of a diffraction grating$
标题翻译：用于形成衍射光栅的方法
公开(公告)号：US4806454A
公开(公告)日：1989-02-21
申请号：US65145
申请日：1987-06-24
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： G02B5/18 , G02B5/32 , G02B6/124 , H01S5/00 , H01S5/12 , G03C5/00
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
摘要翻译：一种使用全息技术和蚀刻技术在基板上形成衍射光栅的方法，其中衍射光栅的图案的周期可以随意地通过两个中的一个的光路长度的变化而改变来自全息曝光系统的光通量。

59. 发明授权

US4803690A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4803690A
公开(公告)日：1989-02-07
申请号：US839869
申请日：1986-03-13
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/12 , H01S3/09 , H01S3/08
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.
摘要翻译：一种半导体激光器，包括由用于激光振荡的有源层组成的三层结构和夹在其间的所述有源层的一对光导层，其中每个所述光导层的折射率小于所述有源层的折射率，并且每个所述光导层的带隙大于所述有源层的带隙，此外，具有不同间距的衍射光栅位于每个所述光导层的外侧。

60. 发明授权

US4799227A Semiconductor laser device having a buried heterostructure 失效
标题翻译：具有掩埋异质结构的半导体激光器件
公开(公告)号：US4799227A
公开(公告)日：1989-01-17
申请号：US066510
申请日：1987-06-26
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2275
摘要： A semiconductor laser device having a buried heterostructure which includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a substrate, said multi-layered crystal structure having a striped mesa-portion, a multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each side of the active layer.

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