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51. 发明申请

US20070272291A1 THERMOELECTRIC MODULE DEVICE 失效
标题翻译：热电模块装置
公开(公告)号：US20070272291A1
公开(公告)日：2007-11-29
申请号：US11753123
申请日：2007-05-24
申请人： Akihiro Morimoto , Takahiro Kimura
发明人： Akihiro Morimoto , Takahiro Kimura
IPC分类号： H01L35/28
CPC分类号： H01L35/10 , H01L35/08 , H01L35/34
摘要： A thermoelectric module device includes a first substrate having inner and outer surfaces, a second substrate having inner and outer surfaces, a Peltier-junction module sandwiched between the inner surfaces of the first and second substrates, the Peltier-junction module being made up of a series of Peltier junctions including a pair of outermost Peltier junctions, a pair of power supply electrodes connected to the pair of the outermost Peltier junctions, respectively, and a metallization layer provided on the outer surface of the second substrate for being soldered to a package, the metallization layer being divided into spaced first and second portions which correspond to the Peltier-junction module and the pair of power supply electrodes, respectively.
摘要翻译：热电模块装置包括具有内表面和外表面的第一基板，具有内表面和外表面的第二基板，夹在第一和第二基板的内表面之间的珀耳帖结模块，珀耳帖结模块由一系列包括一对最外层的珀尔帖接头的珀尔帖接头，分别连接到一对最外层的珀尔帖接头的一对电源电极以及设在第二基板的外表面上用于焊接到封装的金属化层，金属化层分别分别对应于珀耳帖结模块和一对电源电极的间隔开的第一和第二部分。

52. 发明申请

US20070210715A1 Vacuum Tube And Vacuum Tube Manufacturing Apparatus And Method 失效
标题翻译：真空管及真空管制造装置及方法
公开(公告)号：US20070210715A1
公开(公告)日：2007-09-13
申请号：US10594896
申请日：2005-03-31
申请人： Tadahiro Ohmi , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01J7/02 , H01J9/38 , H01J9/46
CPC分类号： H01J9/395 , H01J7/02 , H01J9/38 , H01J9/385 , H01J17/20 , H01J21/00 , H01J37/18 , H01J61/20 , H01J61/24
摘要： With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.
摘要翻译：对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系放电允许通过上述剩余气体减少不利影响。具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。

53. 发明申请

US20070096289A1 A Multilayered circuit substrate with semiconductor device incorporated therein 有权
标题翻译：具有并入其中的半导体器件的多层电路基板
公开(公告)号：US20070096289A1
公开(公告)日：2007-05-03
申请号：US11529319
申请日：2006-09-29
申请人： Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
发明人： Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01L23/24 , H01L23/12 , H01L23/22
CPC分类号： H01L23/5389 , H01L23/49827 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/105 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/8203 , H01L2224/82047 , H01L2224/92244 , H01L2224/97 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/15331 , H01L2924/30107 , H01L2924/3511 , H01L2224/82
摘要： For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300° C. is less than 1×10−5/K.
摘要翻译：为了提供半导体元件内置型多层电路板，其中半导体元件紧密接合到绝缘基板的凹部，以在半导体元件的工作温度区域有效地分散通过绝缘基板从半导体元件产生的热量半导体元件电路板，可靠地将诸如半导体元件等的电子部件的电连接在短布线中，并且能够实现半导体元件的高密度安装，小型化和提高工作速度，提出了半导体元件内置型多层电路板，其通过层叠多个半导体元件内置型板而形成，所述多个半导体元件内置型基板包括绝缘基板和容纳在其中形成的凹部中的半导体元件，其特征在于，所述绝缘基板的线膨胀系数和线性膨胀公司温度范围为20-300℃的半导体元件的效率小于1×10 -5 / K。

54. 发明授权

US07103990B2 Rotary silicon wafer cleaning apparatus 有权
标题翻译：旋转硅片清洗装置
公开(公告)号：US07103990B2
公开(公告)日：2006-09-12
申请号：US10498800
申请日：2003-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
IPC分类号： F26B5/08
CPC分类号： H01L21/67034 , H01L21/02052
摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要翻译：本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置，在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

55. 发明申请

US20060152001A1 Parts for fluid 审中-公开
标题翻译：液体零件
公开(公告)号：US20060152001A1
公开(公告)日：2006-07-13
申请号：US10519673
申请日：2003-07-09
申请人： Ryo Matsuhashi , Kazuhiro Suetsugu , Hideyuki Miyagawa , Toshio Kita , Kyota Sogabe , Kazuhiro Yoshikawa , Akihiro Morimoto , Jyunji Sato , Kunihiko Daido , Hisatoshi Akamoto , Yoshiki Kimura
发明人： Ryo Matsuhashi , Kazuhiro Suetsugu , Hideyuki Miyagawa , Toshio Kita , Kyota Sogabe , Kazuhiro Yoshikawa , Akihiro Morimoto , Jyunji Sato , Kunihiko Daido , Hisatoshi Akamoto , Yoshiki Kimura
IPC分类号： F16L19/06
CPC分类号： C22C38/46 , C22C38/001 , C22C38/42 , C22C38/44 , F16J15/102 , F16K7/123 , F16K27/0236 , F16K31/122 , F16L19/0218 , F16L19/103 , F16L58/184
摘要： A specified metal member included among the components of a valve, coupling or like fluid handling part for use in piping and fluid control devices is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities, the alloy having a CRI (crevice corrosion resistance index) value in the range of 40≦CRI≦55, as determined from the expression CRI=[Cr]+4×[Mo]+30×[N] wherein the amount of alloy components present in combination in the alloy to ensure crevice corrosion resistance are expressed in % by weight.
摘要翻译：包括在用于管道和流体控制装置的阀，联接器或类似流体处理部件的部件中的特定金属构件由合金制成，其包含以重量％计的0.001至0.01％的C，至多5％的 Si，高达2％的Mn，高达0.03％的P，高达100ppm的S，至多50ppm的O，18至25％的Cr，15至25％的Ni，4.5至7.0％的Mo ，0.5〜3.0％的Cu，0.1〜0.3％的N，余量基本上为Fe和其他不可避免的杂质，该合金的CRI（缝隙耐腐蚀指数）值在40 <= CRI <= 55的范围内，为由CrI = [Cr] + 4x [Mo] + 30x [N]的表达式确定，其中合金中组合存在的合金组分的量确保耐缝隙腐蚀性以重量％表示。

56. 发明申请

US20060102868A1 Parts for fluid 审中-公开
标题翻译：液体零件
公开(公告)号：US20060102868A1
公开(公告)日：2006-05-18
申请号：US10519675
申请日：2003-07-09
申请人： Ryo Matsuhashi , Kazuhiro Suetsugu , Hideyuki Miyagawa , Toshio Kita , Kyota Sogabe , Kazuhiro Yoshikawa , Akihiro Morimoto , Jyunji Sato , Kunihiko Daido , Masahiko Sogao , Yoshiaki Chikaike
发明人： Ryo Matsuhashi , Kazuhiro Suetsugu , Hideyuki Miyagawa , Toshio Kita , Kyota Sogabe , Kazuhiro Yoshikawa , Akihiro Morimoto , Jyunji Sato , Kunihiko Daido , Masahiko Sogao , Yoshiaki Chikaike
IPC分类号： F16K25/00
CPC分类号： F16K27/0236 , C22C38/001 , C22C38/42 , C22C38/44 , F16K27/00 , F16L19/103 , F16L58/184
摘要： A specified metal member (e.g., a bolt) 5 included among a plurality of components 2, 3, 4, 5, 6 of a fluid handling part and having a surface exposed on an exterior of the fluid handling part is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities.
摘要翻译：包括在流体处理部分的多个部件2,3,4,5,6中并且具有暴露在流体处理部分的外部上的表面的特定金属部件（例如，螺栓）5由合金制成，该合金包括，以重量％计，C：0.001〜0.01％，Si：5％以下，Mn：0.2％以下，P：0.03以下，S：100ppm以下，O：18〜 25％的Cr，15〜25％的Ni，4.5〜7.0％的Mo，0.5〜3.0％的Cu，0.1〜0.3％的N，余量基本上是Fe和其他不可避免的杂质。

57. 发明申请

US20060091672A1 Pipe joint 审中-公开
标题翻译：管接头
公开(公告)号：US20060091672A1
公开(公告)日：2006-05-04
申请号：US10519672
申请日：2003-07-09
申请人： Ryo Matsuhashi , Kazuhiro Suetsugu , Hideyuki Miyagawa , Toshio Kita , Kyota Sogabe , Kazuhiro Yoshikawa , Akihiro Morimoto , Jyunji Sato , Kunihiko Shimomura , Yoshinori Shimomura , Takayasu Nakahama
发明人： Ryo Matsuhashi , Kazuhiro Suetsugu , Hideyuki Miyagawa , Toshio Kita , Kyota Sogabe , Kazuhiro Yoshikawa , Akihiro Morimoto , Jyunji Sato , Kunihiko Shimomura , Yoshinori Shimomura , Takayasu Nakahama
IPC分类号： F16L37/00
CPC分类号： F16L19/061 , C22C38/001 , C22C38/42 , C22C38/44 , F16L19/08
摘要： A pipe coupling 30 comprises a tubular body 31 for a pipe 32 to be inserted in through the rear end thereof, a front ring 33 and a back ring 34 to be fitted around the pipe 32 projecting from the rear end of the body 31, and a cap nut 35 for tightening up the front and back rings 33, 34 to fix the pipe 32 to the body 31. The back ring 34 is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities.
摘要翻译：管接头30包括用于管32的管状体31，其通过其后端插入，前环33和后环34围绕从主体31的后端突出的管32配合，以及用于紧固前后环33,34以将管32固定到主体31的盖螺母35。后环34由以重量％计含有0.001至0.01％C，至多5％Si，至多2％Mn，至多0.03％P，至多100ppm S ，高达50ppm的O，18〜25％的Cr，15〜25％的Ni，4.5〜7.0％的Mo，0.5〜3.0％的Cu，0.1〜0.3％的N，余量基本上是Fe等不可避免的杂质。

58. 发明授权

US06347279B1 Car navigation system 失效
标题翻译：汽车导航系统
公开(公告)号：US06347279B1
公开(公告)日：2002-02-12
申请号：US09585036
申请日：2000-06-01
申请人： Akihiro Morimoto
发明人： Akihiro Morimoto
IPC分类号： G01C2100
CPC分类号： G01C21/3673
摘要： A car navigation system displays texts free from overlapping with each other. The system includes a position calculator, a remote-control-unit, a map-memory for storing a map in a unit, an overlap determiner for determining whether or not a text undergone a co-ordinates-conversion is overlapped, a text-memory for storing a text in one unit, a displayed-data-memory for storing displayed text, and a display device for displaying a map.
摘要翻译：汽车导航系统显示没有彼此重叠的文本。该系统包括位置计算器，遥控单元，用于存储单元中的地图的地图存储器，用于确定经历坐标转换的文本是否重叠的重叠确定器，文本存储器用于将文本存储在一个单元中，用于存储显示的文本的显示数据存储器以及用于显示地图的显示装置。

59. 发明授权

US06334962B1 Low flow rate moisture supply process 失效
标题翻译：低流量水分供应过程
公开(公告)号：US06334962B1
公开(公告)日：2002-01-01
申请号：US09207763
申请日：1998-12-09
申请人： Yukio Minami , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto
发明人： Yukio Minami , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto
IPC分类号： C01B500
CPC分类号： F22B1/003 , C01B5/00
摘要： A process of supplying moisture at low flow rates which permits high precision control of the flow of moisture to a semiconductor manufacturing line from an apparatus for the generation of moisture, characterized in that the flow of hydrogen to a moisture-generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are (a) fed into a reactor provided with a coat of platinum on the wall in the interior space, (b) enhanced in reactivity by the platinum catalytic action, and (c) caused to instantaneously react with each other at a temperature lower than the ignition point to produce moisture without undergoing combustion at a high temperature.
摘要翻译：以低流量供应水分的方法，其允许从用于产生水分的装置对半导体生产线的水分流的高精度控制，其特征在于，通过装置控制氢气流向产生水分的反应器的流量控制器，使得所供给的氢气的量从开始逐渐增加并达到特定设定水平，使得当经过特定时间时，开始产生预定的水分率并将其供应到半导体生产线。在用于产生水分的装置中产生水分，其中（a）在内部空间的壁上被供给到设置有铂层的反应器的反应器中，（b）通过铂催化作用增强反应性，和（c）在低于点火点的温度下彼此瞬间反应以产生湿气，而不会在高温下经历燃烧。

60. 发明授权

US06273477B1 Gasket and pipe joint 有权
标题翻译：垫圈和管接头
公开(公告)号：US06273477B1
公开(公告)日：2001-08-14
申请号：US09253942
申请日：1999-02-22
申请人： Tadahiro Ohmi , Michio Yamaji , Tsutomu Shinohara , Nobukazu Ikeda , Akihiro Morimoto
发明人： Tadahiro Ohmi , Michio Yamaji , Tsutomu Shinohara , Nobukazu Ikeda , Akihiro Morimoto
IPC分类号： F16L2500
CPC分类号： C22C38/44 , F16L19/0212 , Y10S285/917
摘要： A pipe joint comprises a pair of tubular joint members, an annular gasket interposed between opposed end faces of the two joint members, and threaded means for joining the two joint members. Each of the joint members is prepared from a stainless steel having a surface with a Vickers hardness of at least 300. The gasket is prepared from a stainless steel comprising, in ratio by weight, 12.90 to 15.00% of Ni, 16.50 to 18.00% of Cr, 2.00 to 3.00% of Mo, up to 0.02% of C, up 0.30% of Si, up to 0.40% of Mn, up to 0.03% of P, up to 0.003% of S, up to 0.25% of Cu and up to 0.01% of Al, the gasket having a surface with a Vickers hardness of 90 to 160.
摘要翻译：管接头包括一对管状接头构件，插入在两个接头构件的相对端面之间的环形垫圈，以及用于接合两个接头构件的螺纹装置。每个接合构件由具有维氏硬度至少为300的表面的不锈钢制成。垫圈由不锈钢制成，其包含按重量计12.10％至15.00％的Ni，16.50至18.00％的 Cr，2.00〜3.00％的Mo，高达0.02％的C，0.30％的Si，至多0.40％的Mn，至多0.03％的P，至多0.003％的S，至多0.25的Cu和高达0.01％的Al，垫圈具有维氏硬度为90至160的表面。

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