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    • 60. 发明申请
    • LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
    • 发光二极管及其制造方法
    • US20080283858A1
    • 2008-11-20
    • US11952955
    • 2007-12-07
    • WEN-JANG JIANGYUAN-FA CHU
    • WEN-JANG JIANGYUAN-FA CHU
    • H01L33/00
    • H01L33/42
    • A light-emitting diode includes: a light-emitting structure, a transparent electrically conductive thick film, a first electrical contact and a second electrical contact. The light-emitting structure includes a first-type cladding layer, a second-type cladding layer, and an active layer sandwiched between the first-type cladding layer and the second-type cladding layer. The transparent electrically conductive thick film is formed on the first-type cladding layer. The first electrical contact is located on the transparent electrically conductive thick film. The second electrical contact is located on the second-type cladding layer. The transparent electrically conductive thick film is made from a metal-doped metal oxide.
    • 发光二极管包括:发光结构,透明导电厚膜,第一电接触和第二电接触。 发光结构包括第一型包覆层,第二型包覆层和夹在第一型包层和第二类型包层之间的有源层。 透明导电厚膜形成在第一型包覆层上。 第一电触点位于透明导电厚膜上。 第二电接触位于第二类覆层上。 透明导电厚膜由金属掺杂的金属氧化物制成。