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51. 发明申请

US20110296817A1 ADAPTIVE OXYGEN SENSOR METHODS, SYSTEMS, AND SOFTWARE 有权
标题翻译：自适应氧传感器方法，系统和软件
公开(公告)号：US20110296817A1
公开(公告)日：2011-12-08
申请号：US13213038
申请日：2011-08-18
申请人： Bradlee J. Stroia , Wei Lu
发明人： Bradlee J. Stroia , Wei Lu
IPC分类号： F01N3/18 , F02D45/00 , F01N3/00
CPC分类号： F01N3/0807 , F01N3/035 , F01N3/106 , F01N11/002 , F01N11/007 , F01N13/009 , F01N2550/00 , F01N2560/025 , F01N2560/06 , F01N2560/14 , F01N2900/0422 , F02D41/1454 , F02D41/222 , F02D41/2441 , F02D41/2454 , F02D41/2474 , Y02T10/20 , Y02T10/47
摘要： One embodiment is a system operable to control entry of an oxygen sensor into a learning mode. Further embodiments, forms, objects, features, advantages, aspects, and benefits shall become apparent from the following description and drawings.
摘要翻译：一个实施例是可操作以控制氧传感器进入学习模式的系统。从以下说明和附图，其他实施例，形式，目的，特征，优点，方面和优点将变得显而易见。

52. 发明授权

US07899451B2 OWA converged network access architecture and method 有权
标题翻译： OWA融合网络接入架构和方法
公开(公告)号：US07899451B2
公开(公告)日：2011-03-01
申请号：US11780471
申请日：2007-07-20
申请人： Jianhong Hu , Willie Wei Lu
发明人： Jianhong Hu , Willie Wei Lu
IPC分类号： H04W4/00
CPC分类号： H04W48/17 , H04L12/189 , H04W4/06 , H04W80/04 , H04W88/005 , H04W88/06
摘要： As no single wireless network can provide both broadband high-speed radio transmission and seamless full mobility for commercial wireless communications in terms of technology, cost, spectrum and performance, a new wireless converged network access infrastructure based on Open Wireless Architecture (OWA) has been disclosed, wherein the spectrum is separated into low spectrum band (LSB) for wide area seamless mobility networks and high spectrum band (HSB) for very high-speed broadband wireless access systems in order to maximize the spectrum utilization efficiency for the converged multiple wireless access networks of the fully service-oriented wireless communications including multimedia broadcast and multicast service.
摘要翻译：由于没有单一的无线网络可以在技术，成本，频谱和性能方面提供宽带高速无线电传输和商用无线通信的无缝完全移动性，所以基于开放式无线架构（OWA）的新的无线融合网络接入基础设施已经被公开了其中频谱被分离成用于广域无缝移动网络的低频带（LSB）和用于非常高速的宽带无线接入系统的高频带（HSB），以便最大化融合多个无线接入的频谱利用效率完全面向服务的无线通信网络，包括多媒体广播和多播服务。

53. 发明申请

US20110029740A1 COMMUNICATING METHOD APPLIED FOR STORAGE DEVICE 审中-公开
标题翻译：适用于存储设备的通信方法
公开(公告)号：US20110029740A1
公开(公告)日：2011-02-03
申请号：US12626938
申请日：2009-11-30
申请人： Chia-Hsiung Lee , Cheng-Wei Lu
发明人： Chia-Hsiung Lee , Cheng-Wei Lu
IPC分类号： G06F12/00 , G06F3/00
CPC分类号： G06F3/0638 , G06F3/061 , G06F3/0659 , G06F3/0673
摘要： A communicating method between a storage device and an application program includes the following steps: the application program dynamically selects a block address in the storage device as a predetermined block address; and the application program performs a command write-in or state read-out process via the predetermined block address to communicate with the storage device.
摘要翻译：存储装置和应用程序之间的通信方法包括以下步骤：应用程序将存储装置中的块地址动态地选择为预定块地址; 并且应用程序经由预定块地址执行命令写入或状态读出处理以与存储设备通信。

54. 发明授权

US07858965B2 Nanowire heterostructures 有权
标题翻译：纳米线异质结构
公开(公告)号：US07858965B2
公开(公告)日：2010-12-28
申请号：US11807186
申请日：2007-05-25
申请人： Wei Lu , Jie Xiang , Yue Wu , Brian P. Timko , Hao Yan , Charles M. Lieber
发明人： Wei Lu , Jie Xiang , Yue Wu , Brian P. Timko , Hao Yan , Charles M. Lieber
IPC分类号： H01L29/778
CPC分类号： B82Y10/00 , G11C2213/17 , G11C2213/18 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/165
摘要： The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers. As a non-limiting example, a nanoscale wire having a core and a shell may be in physical contact with a metal electrode, such that the Schottky barrier to the core is reduced or eliminated. Still other aspects of the invention are directed to electronic devices exhibiting such properties, and techniques for methods of making or using such devices.
摘要翻译：本发明一般涉及纳米尺度异质结构，在某些情况下涉及显示弹道输运的纳米线异质结构，和/或涉及没有或减少的肖特基势垒的金属 - 半导体结。本发明的一个方面提供了具有核和壳的固体纳米线，两者都基本上是未掺杂的。例如，在一个实施例中，芯可以主要由未掺杂的锗组成，并且壳可以基本上由未掺杂的硅组成。载体被注入纳米线，可以通过纳米线进行弹道传输。然而，在其它实施方案中，本发明不限于固体纳米线，并且涉及其它纳米级线的其它构型也在本发明的范围内。本发明的另一方面提供了金属和纳米尺寸线之间的连接处，其不显示或减小肖特基势垒。作为非限制性实例，具有芯和壳的纳米线可以与金属电极物理接触，使得芯的肖特基势垒被减少或消除。本发明的其它方面涉及具有这种性质的电子设备，以及制造或使用这些设备的方法的技术。

55. 发明授权

US07822065B2 Open wireless architecture (OWA) medium access control (MAC) processing architecture for future mobile terminal 有权
标题翻译：为未来的移动终端开放无线架构（OWA）媒体接入控制（MAC）处理架构
公开(公告)号：US07822065B2
公开(公告)日：2010-10-26
申请号：US11620694
申请日：2007-01-07
申请人： Wei Lu
发明人： Wei Lu
IPC分类号： H04J3/16
CPC分类号： H04W88/02 , H04L69/12 , H04L69/32
摘要： A software architecture for future open wireless architecture (OWA) mobile terminal providing an open and secured software platform supporting various wireless air interfaces with multi-dimensional mobility handovers and maximized spectrum efficiency for the truly service-oriented fixed, mobile and wireless communications convergence.
摘要翻译：用于未来开放式无线架构（OWA）移动终端的软件体系结构，提供开放和安全的软件平台，支持各种无线空中接口，实现多维移动切换，并为真正面向服务的固定，移动和无线通信融合提供最大的频谱效率。

56. 发明授权

US07781854B2 Image sensor chip package structure and method thereof 有权
标题翻译：图像传感器芯片封装结构及其方法
公开(公告)号：US07781854B2
公开(公告)日：2010-08-24
申请号：US12183378
申请日：2008-07-31
申请人： Chih-Wei Lu
发明人： Chih-Wei Lu
IPC分类号： H01L31/0203 , H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00 , H01L29/16 , H01L29/417 , H01L29/74 , H01L31/111
CPC分类号： H01L27/14618 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： An image sensor chip package structure includes a transparent substrate, a chip, a sealing ring, a number of conductive posts, and a number of conductive bumps. The transparent substrate has a number of through holes. The through holes pass through the transparent substrate. The chip has an active surface, an image sensitive area, and a number of die pads. The image sensitive area and the die pads are located on the active surface. The sealing ring is disposed between the chip and the transparent substrate and surrounds the image sensitive area and the die pads. The conductive posts are disposed in the through holes, respectively. Here, the chip is electrically connected with the conductive posts via the die pads. The conductive bumps are disposed on the die pads, respectively. The conductive bumps are connected with the conductive posts, respectively.
摘要翻译：图像传感器芯片封装结构包括透明基板，芯片，密封环，多个导电柱和多个导电凸块。透明基板具有多个通孔。通孔穿过透明基板。芯片具有有源表面，图像敏感区域和多个芯片焊盘。图像敏感区域和管芯焊盘位于有源表面上。密封环设置在芯片和透明基板之间，并且包围图像敏感区域和芯片焊盘。导电柱分别设置在通孔中。这里，芯片通过管芯焊盘与导电柱电连接。导电凸块分别设置在芯片焊盘上。导电凸块分别与导电柱连接。

57. 发明授权

US07745320B2 Method for reducing silicide defects in integrated circuits 有权
标题翻译：降低集成电路中硅化物缺陷的方法
公开(公告)号：US07745320B2
公开(公告)日：2010-06-29
申请号：US12124177
申请日：2008-05-21
申请人： Jeff Jianhui Ye , Huang Liu , Alex K H See , Wei Lu , Hai Cong , Hui Peng Koh , Mei Sheng Zhou , Liang Choo Hsia
发明人： Jeff Jianhui Ye , Huang Liu , Alex K H See , Wei Lu , Hai Cong , Hui Peng Koh , Mei Sheng Zhou , Liang Choo Hsia
IPC分类号： H01L29/00 , H01L21/311
CPC分类号： H01L29/665 , H01L21/31116 , H01L29/6653 , H01L29/78
摘要： A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects into the substrate, thereby minimizing the occurrence of silicide pipe defects. The spacer pull-back etch can be performed after a first annealing step to form the silicide contacts.
摘要翻译：描述了在集成电路（IC）中形成硅化物触点的方法。在水解过程期间进行间隔物拉回蚀刻以减少间隔物与间隔物底切下的源/漏硅化物接触之间的应力。这样可以防止表面缺陷进入衬底，从而使硅化物管缺陷的发生最小化。间隔物拉回蚀刻可以在第一退火步骤之后进行以形成硅化物接触。

58. 发明申请

US20100123903A1 OPTICAL SCANNING PROBE 有权
标题翻译：光学扫描探头
公开(公告)号：US20100123903A1
公开(公告)日：2010-05-20
申请号：US12410368
申请日：2009-03-24
申请人： Chih-Wei Lu , Chia-Wei Sun , Gwo-Bin Lee , Te-Yang Shen
发明人： Chih-Wei Lu , Chia-Wei Sun , Gwo-Bin Lee , Te-Yang Shen
IPC分类号： G01B11/24
CPC分类号： G01B11/24
摘要： An optical scanning probe is provided and includes a housing, a diaphragm disposed in the housing, a rotor, a conduit, an optical fiber module, and a reflector disposed on the rotor, wherein the diaphragm and the housing forms a chamber. The rotor is movably disposed in the chamber and has several fans. The conduit is disposed in the housing to conduct fluid into the chamber, thus impelling the fans and the rotor. The optical fiber module is disposed in the housing and through the diaphragm to transmit a light beam. The reflector rotates with the rotor and reflects the light beam for 360° scanning.
摘要翻译：提供了一种光学扫描探针，其包括壳体，设置在壳体中的隔膜，转子，导管，光纤模块和布置在转子上的反射器，其中隔膜和壳体形成腔室。转子可移动地设置在室中并具有多个风扇。导管设置在壳体中以将流体引导到腔室中，从而推动风扇和转子。光纤模块设置在壳体中并通过光阑传输光束。反射器与转子一起旋转并将光束反射360°扫描。

59. 发明申请

US20100093135A1 STRATIFIED UNDERFILL METHOD FOR AN IC PACKAGE 有权
标题翻译：用于IC封装的分层底层封装方法
公开(公告)号：US20100093135A1
公开(公告)日：2010-04-15
申请号：US12639058
申请日：2009-12-16
申请人： Mirng-Ji Lii , Szu-Wei Lu , Tjandra Winata Karta , Chien-Hsiun Lee
发明人： Mirng-Ji Lii , Szu-Wei Lu , Tjandra Winata Karta , Chien-Hsiun Lee
IPC分类号： H01L21/56
CPC分类号： H01L21/563 , H01L23/295 , H01L23/3128 , H01L2224/05022 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/01019 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
摘要： A method includes joining an integrated circuit die having at least one low-k dielectric layer to a package substrate or printed circuit board using a plurality of solder bumps located between the die and the package substrate or printed circuit board. The low-k dielectric layer has a dielectric constant of about 3.0 or less. The solder bumps have a lead concentration of about 5% or less. A stratified underfill is formed between the die and the package substrate or printed circuit board.
摘要翻译：一种方法包括使用位于管芯和封装衬底或印刷电路板之间的多个焊料凸块将具有至少一个低k电介质层的集成电路管芯连接到封装衬底或印刷电路板。低k电介质层的介电常数约为3.0或更小。焊锡凸块的铅浓度约为5％以下。在模具和封装衬底或印刷电路板之间形成分层的底部填充物。

60. 发明申请

US20100085798A1 SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE 有权
标题翻译：基于硅的纳米电阻器件具有可调电阻
公开(公告)号：US20100085798A1
公开(公告)日：2010-04-08
申请号：US12575921
申请日：2009-10-08
申请人： Wei Lu , Sung Hyun Jo , Kuk-Hwan Kim
发明人： Wei Lu , Sung Hyun Jo , Kuk-Hwan Kim
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： G11C13/0069 , G11C11/56 , G11C13/0002 , G11C13/003 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/72 , G11C2213/76 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/148
摘要： A non-volatile solid state resistive device that includes a first electrode, a p-type poly-silicon second electrode, and a non-crystalline silicon nanostructure electrically connected between the electrodes. The nanostructure has a resistance that is adjustable in response to a voltage being applied to the nanostructure via the electrodes. The nanostructure can be formed as a nanopillar embedded in an insulating layer located between the electrodes. The first electrode can be a silver or other electrically conductive metal electrode. A third (metal) electrode can be connected to the p-type poly-silicon second electrode at a location adjacent the nanostructure to permit connection of the two metal electrodes to other circuitry. The resistive device can be used as a unit memory cell of a digital non-volatile memory device to store one or more bits of digital data by varying its resistance between two or more values.
摘要翻译：一种非挥发性固态电阻器件，其包括电连接在电极之间的第一电极，p型多晶硅第二电极和非晶硅纳米结构。纳米结构具有响应于通过电极施加到纳米结构的电压而可调节的电阻。纳米结构可以形成为嵌入位于电极之间的绝缘层中的纳米柱。第一电极可以是银或其它导电金属电极。第三（金属）电极可以在邻近纳米结构的位置处连接到p型多晶硅第二电极，以允许两个金属电极连接到其它电路。电阻器件可以用作数字非易失性存储器件的单元存储单元，以通过改变其两个或多个值之间的电阻来存储一位或多位数字数据。

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