专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20070173185A1 WAFER HOLDER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE EQUIPPED WITH THE SAME 审中-公开
标题翻译：用于半导体制造装置的半固态装置和配备其的半导体制造装置
公开(公告)号：US20070173185A1
公开(公告)日：2007-07-26
申请号：US11625594
申请日：2007-01-22
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Kenji Shinma , Hirohiko Nakata
IPC分类号： B24B29/00
CPC分类号： H01L21/68735
摘要： A wafer holder uniformly heats a wafer at high temperatures without being damaged. A semiconductor manufacturing apparatus is provided with this wafer holder. The contact surface area where the wafer and the wafer mounting surface of the wafer-holding part are in contact includes a contact surface area A in an outer circumferential area that is farther than 1/√2R from the center of the wafer, where R is the radius of the wafer, and a contact surface area B in an inner circumferential area that is within 1/√2R of the center. The contact surface area is established so that A>B. In order to obtain this relationship, the wafer-contacting part of the wafer mounting surface is preferably formed into annular convexities or embossed convexities.
摘要翻译：晶片保持器在高温下均匀地加热晶片而不被损坏。半导体制造装置设置有该晶片保持器。晶片保持部的晶片和晶片安装面接触面的接触面积包括比晶片中心更远离1 /√2R的外周区域的接触面积A，其中R为晶圆的半径以及在中心的1 /√2R以内的内周区域的接触面积B. 建立接触面积，使A> B。为了获得这种关系，晶片安装表面的晶片接触部分优选地形成为环形凸起或压花凸起。

52. 发明申请

US20070126457A1 Wafer holder, and heating unit and wafer prober provided with the wafer holder 审中-公开
标题翻译：晶片支架，以及配有晶片支架的加热单元和晶圆探测器
公开(公告)号：US20070126457A1
公开(公告)日：2007-06-07
申请号：US11603233
申请日：2006-11-22
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： G01R31/26
CPC分类号： G01R31/2893
摘要： A wafer holder is provided with a mounting stage having a mounting surface for mounting a wafer, and a holding member for holding the mounting stage, wherein relationships are established such that K1>K2 and Y1 K3, where K3 is the thermal conductivity of the holding member.
摘要翻译：晶片保持器设置有具有用于安装晶片的安装表面的安装台和用于保持安装台的保持构件，其中建立K 1> K 2和Y 1 K 3，其中K 3是保持构件的热导率。

53. 发明申请

US20070024313A1 Chuck top, wafer holder having the chuck top, and wafer prober having the chuck top 审中-公开
标题翻译：卡盘顶部，具有卡盘顶部的晶片架，以及具有卡盘顶部的晶片探测器
公开(公告)号：US20070024313A1
公开(公告)日：2007-02-01
申请号：US11493920
申请日：2006-07-27
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
IPC分类号： G01R31/26
CPC分类号： G01R31/2893
摘要： A chuck top allowing reliable recognition of a wafer mounted on a wafer-mounting surface or on a chuck top conductive layer by a camera such as a CCD and hence allowing wafer inspection without problem is provided. The chuck top is used for a wafer prober mounting a wafer on the wafer-mounting surface for inspection, in which reflectance of a portion other than the portion for mounting the wafer of the wafer-mounting surface or the chuck top conductive layer is smaller than the reflectance of a peripheral end portion of the wafer to be inspected. The portion other than the portion for mounting the wafer of the wafer-mounting surface or the chuck top conductive layer of chuck top preferably has surface roughness Ra of at least 0.0001 μm and at most 0.05 μm.
摘要翻译：提供了一种卡盘头，其允许通过诸如CCD的照相机安装在晶片安装表面或卡盘顶部导电层上的晶片可靠地识别，并且因此允许晶片检查没有问题。卡盘顶部用于将晶片安装在晶片安装表面上用于检查的晶片探测器，其中除了用于安装晶片安装表面或卡盘顶部导电层的晶片的部分之外的部分的反射率小于要检查的晶片的外周端部的反射率。除了用于安装晶片安装表面的晶片或卡盘顶板的导电层的部分之外的部分优选具有至少0.0001μm的表面粗糙度Ra和至多0.05μm的表面粗糙度Ra。

54. 发明申请

US20070023320A1 Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit 审中-公开
标题翻译：晶片保持器，具有晶片保持器的加热器单元和具有加热器单元的晶片探测器
公开(公告)号：US20070023320A1
公开(公告)日：2007-02-01
申请号：US11492223
申请日：2006-07-25
申请人： Katsuhira Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Kenji Shinma
发明人： Katsuhira Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Kenji Shinma
IPC分类号： B65D85/00
CPC分类号： H01L21/68757 , H01L21/67103
摘要： A wafer holder hardly deformable under high load and capable of effectively preventing a contact failure with a wafer and further capable of preventing temperature increase of a driving system of a wafer prober is provided. In a wafer holder having a chuck top and a supporter, variation in thickness of the chuck top from a wafer-mounting surface to a contact surface with the supporter, and variation in thickness of the supporter from a bottom surface to a contact surface with the chuck top are both set to at most 50 μm. When the supporter is of a structure having a circular tube portion and a base portion separate from each other, variation in thickness of the circular tube portion from a contact surface with the chuck top to a contact surface with the base portion, and variation in thickness of the base portion from a bottom surface to a contact surface with the circular tube portion are preferably both set to at most 25 μm.
摘要翻译：晶片保持器在高负载下几乎不变形，并且能够有效地防止与晶片的接触故障，并且还能够防止晶片探测器的驱动系统的温度升高。在具有卡盘顶部和支撑件的晶片保持器中，卡盘顶部从晶片安装表面到支撑件的接触表面的厚度变化，以及支撑件从底表面到接触表面的厚度的变化卡盘顶部都设定为最多50马姆。当支撑体具有圆形管部分和基部彼此分离的结构时，圆形管部分从与卡盘顶部的接触表面到与基部的接触表面的厚度的变化以及厚度的变化从底面到与圆管部分的接触表面的底部部分优选地设定为至多25μm。

55. 发明授权

US06458298B1 Process for molding ceramics 失效
标题翻译：陶瓷成型工艺
公开(公告)号：US06458298B1
公开(公告)日：2002-10-01
申请号：US08505069
申请日：1995-07-21
申请人： Tomoyuki Awazu , Yasushi Tsuzuki , Akira Yamakawa
发明人： Tomoyuki Awazu , Yasushi Tsuzuki , Akira Yamakawa
IPC分类号： B28B126
CPC分类号： B28B1/262 , B28B1/265 , B29C2043/3628 , B29L2023/00
摘要： A wet molding method in which a ceramic slurry is charged into a cavity and uniaxially pressed by a punch to remove excess liquid from a portion of the slurry facing the punch to effect molding, the method being improved by maintaining at least one of the following conditions; (a) the pressing of the slurry is stopped at a time between T and 1.5 T, T being defined as the pressing time necessary to remove sufficient excess liquid from the slurry in the mold to produce a molded mass; or (b) the punch displacement position at a time at which sufficient excess liquid is removed from the slurry in the mold to produce a molded mass is less than 17% of the total mold length.
摘要翻译：一种湿法成型方法，其中将陶瓷浆料装入空腔中并通过冲头单轴挤压以从面向冲头的浆料的一部分中除去多余的液体以实现模塑，该方法通过保持以下条件中的至少一种而得到改善（a）在T和1.5T之间停止浆料的压制，T定义为从模具中的浆料中除去足够多的液体以产生模制物料所需的挤压时间; 或（b）在模具中从浆料中除去足够多的液体以产生模制物料的时间处的冲头位移位置小于总模具长度的17％。

56. 发明授权

US5424282A Process for manufacturing a composite oxide superconducting wire 失效
标题翻译：复合氧化物超导线的制造方法
公开(公告)号：US5424282A
公开(公告)日：1995-06-13
申请号：US200540
申请日：1994-02-22
申请人： Susumu Yamamoto , Teruyuki Murai , Nozomu Kawabe , Tomoyuki Awazu , Shuji Yazu , Tetsuji Jodai
发明人： Susumu Yamamoto , Teruyuki Murai , Nozomu Kawabe , Tomoyuki Awazu , Shuji Yazu , Tetsuji Jodai
IPC分类号： B21C1/00 , B28B1/00 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/04 , H01B13/00 , H01L39/24
CPC分类号： H01L39/143 , H01L39/248 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T29/49014 , Y10T428/31678
摘要： A process for producing a composite oxide superconducting wire is disclosed, which comprises the steps of compacting material powder for an oxide superconductor in a noble metal pipe; heating the metal pipe filled with the material powder at a temperature ranging between an upper limit corresponding to the lowest melting point of any one of constituent components in the material powder and a lower limit which is lower by 100.degree. C. than said upper limit to sinter the material powder and cooling the product at a cooling velocity of less than 50.degree. C./min, and further including a series of wire-drawing, annealing and sintering steps. Furthermore, an intermediate layer of noble metal can be interposed between the oxide superconductor and the metal pipe.
摘要翻译：公开了一种生产复合氧化物超导线的方法，其包括在贵金属管中压制氧化物超导体的材料粉末的步骤; 在与材料粉末中的任何一种构成成分的最低熔点相对应的上限和比所述上限低100℃的下限的温度范围内加热填充有材料粉末的金属管，烧结材料粉末并以低于50℃/ min的冷却速度冷却产品，并进一步包括一系列拉丝，退火和烧结步骤。此外，贵金属的中间层可以介于氧化物超导体和金属管之间。

57. 发明授权

US5394015A Method of producing sintered silicon nitrides 失效
标题翻译：制造烧结硅氮化物的方法
公开(公告)号：US5394015A
公开(公告)日：1995-02-28
申请号：US91192
申请日：1993-07-14
申请人： Yasushi Tsuzuki , Tomoyuki Awazu , Akira Yamakawa
发明人： Yasushi Tsuzuki , Tomoyuki Awazu , Akira Yamakawa
IPC分类号： C04B35/584 , C04B35/593 , F01L1/04 , F01L3/02 , F02F5/00 , F16J9/26 , C04B35/58
CPC分类号： C04B35/584 , C04B35/5935 , C04B35/6263 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3865 , C04B2235/3878 , C04B2235/5445 , C04B2235/6022 , C04B2235/604 , C04B2235/6567 , C04B2235/658 , C04B2235/661 , C04B2235/77 , C04B2235/96
摘要： The invention provides a method of producing sintered silicon nitrides having such strength characteristics as are sufficient to insure satisfactory reliability of the sintered silicon nitride for use in applications such as automotive engine parts and bearings. The method comprises preparing a sintering aid by blending yttrium oxide, spinel, and aluminum oxide and/or aluminum nitride together in such proportions in terms of molar ratios of metal elements that Y/(Al+Mg) is 0.23 to 0.85 and Al/Mg is 2.1 to 5.2, mixing 5.0 to 13.0% by weight of the sintering aid with 87.0 to 95.0% by weight of a silicon nitride powder having an .alpha. crystallinity of not less than 60%, and, after the resulting powder mixture is molded into shape, sintering the molded piece at temperatures of 1400 to 1650.degree. C. in a nitrogen gas atmosphere or in an inert gas atmosphere containing nitrogen gas.
摘要翻译：本发明提供了一种制造烧结硅氮化物的方法，其具有足以确保用于汽车发动机部件和轴承的应用中的氮化硅烧结体的令人满意的可靠性的强度特性。该方法包括通过以Y /（Al + Mg）为0.23至0.85的金属元素的摩尔比和Al / Mg的摩尔比将氧化钇，尖晶石和氧化铝和/或氮化铝以这样的比例混合来制备烧结助剂为2.1〜5.2，将5.0〜13.0重量％的烧结助剂与87.0〜95.0重量％的α结晶度为60％以上的氮化硅粉末混合，在得到的粉末混合物成型后，在氮气气氛中或在含有氮气的惰性气体气氛中，在1400〜1650℃的温度下烧结成型体。

58. 发明授权

US5122507A Process for manufacturing a superconducting composite 失效
标题翻译：制造超级复合材料的方法
公开(公告)号：US5122507A
公开(公告)日：1992-06-16
申请号：US189366
申请日：1988-05-02
申请人： Susumu Yamamoto , Teruyuki Murai , Nozomu Kawabe , Tomoyuki Awazu , Shuji Yazu , Tetsuji Jodai
发明人： Susumu Yamamoto , Teruyuki Murai , Nozomu Kawabe , Tomoyuki Awazu , Shuji Yazu , Tetsuji Jodai
IPC分类号： B21C1/00 , B28B1/00 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/04 , H01B13/00 , H01L39/24
CPC分类号： H01L39/143 , H01L39/248 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T29/49014 , Y10T428/31678
摘要： A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermidiate layer made of these precious metals is interposed between the compound oxide and the metal pipe.The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

59. 发明授权

US09184448B2 Method of producing aluminum structure and aluminum structure 有权
标题翻译：生产铝结构和铝结构的方法
公开(公告)号：US09184448B2
公开(公告)日：2015-11-10
申请号：US13363694
申请日：2012-02-01
申请人： Kotaro Kimura , Akihisa Hosoe , Takayasu Sugihara , Osamu Ohama , Kazuki Okuno , Tomoyuki Awazu , Koji Nitta
发明人： Kotaro Kimura , Akihisa Hosoe , Takayasu Sugihara , Osamu Ohama , Kazuki Okuno , Tomoyuki Awazu , Koji Nitta
IPC分类号： C25D11/04 , H01M4/80 , C25D1/08 , C25D3/66 , C25D5/56 , H01G11/30 , H01G11/68 , H01G11/70 , H01G11/86 , H01M4/66
CPC分类号： H01M4/808 , C25D1/08 , C25D3/66 , C25D5/56 , C25D11/04 , H01G11/30 , H01G11/68 , H01G11/70 , H01G11/86 , H01M4/661 , Y02E60/13 , Y10T428/12479
摘要： Provided is a method of producing an aluminum structure using a porous resin molded body having a three-dimensional network structure, with which it is possible to form an aluminum structure having a low oxide content in the surface of aluminum (i.e., having an oxide film with a small thickness), and in particular, it is possible to obtain an aluminum porous body that has a large area. The method includes a step of preparing an aluminum-coated resin molded body in which an aluminum layer is formed, directly or with another layer therebetween, on a surface of a resin molded body composed of urethane, and a heat treatment step in which the aluminum-coated resin molded body is subjected to heat treatment at a temperature equal to or higher than 270° C. and lower than 660° C. to decompose the resin molded body.
摘要翻译：提供一种使用具有三维网状结构的多孔树脂成型体制造铝结构体的方法，能够在铝表面形成氧化物含量低的铝结构体（即，具有氧化膜厚度小），特别是可以得到面积大的铝多孔体。该方法包括在由氨基甲酸乙酯构成的树脂成型体的表面上，直接或间隔地形成铝层的铝被覆树脂成形体的制造工序，在270℃以上且低于660℃的温度下进行热处理，使树脂成形体分解。

60. 发明授权

US08902566B2 Capacitor, and method for producing the same 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08902566B2
公开(公告)日：2014-12-02
申请号：US13252409
申请日：2011-10-04
申请人： Nobuhiro Ota , Akihisa Hosoe , Masatoshi Majima , Koji Nitta , Tomoyuki Awazu , Kazuki Okuno , Masahiro Kato , Shoichiro Sakai , Shinji Inazawa
发明人： Nobuhiro Ota , Akihisa Hosoe , Masatoshi Majima , Koji Nitta , Tomoyuki Awazu , Kazuki Okuno , Masahiro Kato , Shoichiro Sakai , Shinji Inazawa
IPC分类号： H01G9/00 , H01G9/012 , H01G9/04
CPC分类号： H01G9/012 , H01G9/04 , Y02E60/13 , Y02T10/7022 , Y10T29/417
摘要： A capacitor has a positive electrode, a negative electrode, and a solid electrolyte layer arranged between the electrode layers. At least one of the electrode layers of this capacitor has an Al porous body, and an electrode body held in this Al porous body to polarize the electrolyte. The oxygen content in the surface of the Al porous body is 3.1% by mass or less. The matter that the oxygen content in the surface of the Al porous body is 3.1% by mass or less is equal to the matter that a high-resistance oxide film is hardly formed on the surface of the Al porous body. Thus, this Al porous body makes it possible to make the current collector area of the electrode layer large so that the capacitor can be improved in capacity.
摘要翻译：电容器具有布置在电极层之间的正极，负极和固体电解质层。该电容器的至少一个电极层具有Al多孔体，并且电极体保持在该Al多孔体中以使电解质极化。 Al多孔体的表面的氧含量为3.1质量％以下。 Al多孔体的表面的氧含量为3.1质量％以下的问题与在Al多孔体的表面上难以形成高电阻氧化膜的情况相同。因此，该Al多孔体能够使电极层的集电极面积大，能够提高电容器的容量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式