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51. 发明授权

US07485552B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07485552B2
公开(公告)日：2009-02-03
申请号：US11329290
申请日：2006-01-11
申请人： Byoung-Keon Park , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang
发明人： Byoung-Keon Park , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675 , Y10S438/923
摘要： A thin film transistor and method of fabricating the same are provided. The thin film transistor is characterized in that low angle grain boundaries formed in a channel layer in a semiconductor layer pattern is tilted −15 to 15° with respect to a current flowing direction. The method includes: forming an amorphous silicon layer on a substrate; forming a first capping layer on the amorphous silicon layer; forming a second capping layer on the first capping layer, and patterning the second capping layer such that seeds are formed in a line shape; forming a metal catalyst layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing and patterning the amorphous silicon layer to form a semiconductor layer pattern. Thus, a channel layer having an angle nearly parallel to the current flowing direction may be formed in a low angle grain boundary by forming and crystallizing the line-shaped seeds. In other words, the device characteristics may be improved and uniformed by adjusting a position and a direction of the crystal growth.
摘要翻译：提供薄膜晶体管及其制造方法。薄膜晶体管的特征在于，形成在半导体层图案的沟道层中的低角度晶界相对于电流流动方向倾斜-15至15°。该方法包括：在衬底上形成非晶硅层; 在所述非晶硅层上形成第一覆盖层; 在所述第一覆盖层上形成第二覆盖层，并且使所述第二覆盖层图案化，使得种子形成为线状; 在所述图案化的第二覆盖层上形成金属催化剂层; 扩散金属催化剂; 并且使非晶硅层结晶并图形化以形成半导体层图案。因此，通过形成并结晶线状晶种，可以在低角度晶界中形成具有与电流流动方向几乎平行的角度的沟道层。换句话说，可以通过调整晶体生长的位置和方向来改善和均匀的器件特性。

52. 发明申请

US20080157094A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20080157094A1
公开(公告)日：2008-07-03
申请号：US11966056
申请日：2007-12-28
申请人： JIN-WOOK SEO , Byoung-Keon Park , Tae-Hoon Yang , Ki-Yong Lee
发明人： JIN-WOOK SEO , Byoung-Keon Park , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/78675 , H01L27/1277 , H01L27/3244 , H01L29/04 , H01L29/66757
摘要： A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a source region, a drain region and a channel region, and made of a polycrystalline silicon layer; a gate electrode disposed to correspond to the channel region of the semiconductor layer; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively, wherein the polycrystalline silicon layer comprises a plurality of regions having different Raman spectrum peaks from each other.
摘要翻译：薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括源极区域，漏极区域和沟道区域，并且由多晶硅层制成; 设置成对应于半导体层的沟道区的栅电极; 设置在所述半导体层和所述栅极之间的栅极绝缘层; 以及分别与半导体层的源极和漏极区电连接的源极和漏极，其中多晶硅层包括彼此具有不同拉曼光谱峰的多个区域。

53. 发明申请

US20070284581A1 METHOD OF FABRICATING PMOS THIN FILM TRANSISTOR 审中-公开
标题翻译：制造PMOS薄膜晶体管的方法
公开(公告)号：US20070284581A1
公开(公告)日：2007-12-13
申请号：US11741307
申请日：2007-04-27
申请人： Tae-hoon Yang , Ki-yong Lee , Jin-wook Seo , Byoung-keon Park
发明人： Tae-hoon Yang , Ki-yong Lee , Jin-wook Seo , Byoung-keon Park
IPC分类号： H01L21/335 , H01L29/04
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277
摘要： A method of fabricating a p-type thin film transistor (TFT) includes: performing a first annealing process on a substrate to diffuse a metal catalyst through a capping layer into a surface of an amorphous silicon layer, and to crystallize the amorphous silicon layer to a polycrystalline silicon layer due to the diffused metal catalyst; removing the capping layer; patterning the polycrystalline silicon layer to form a semiconductor layer; forming a gate insulating layer and a gate electrode on the substrate; implanting p-type impurity ions into the semiconductor layer; and implanting a gettering material into the semiconductor layer and performing a second annealing process to remove the metal catalyst. Herein, the p-type impurity ions are implanted at a dose of 6×1013/cm2 to 5×1015/cm2, and the gettering material is implanted at a dose of 1×1011/cm2 to 3×1015/cm2.
摘要翻译：一种制造p型薄膜晶体管（TFT）的方法包括：在衬底上进行第一退火处理，将金属催化剂通过覆盖层扩散到非晶硅层的表面中，并将非晶硅层结晶成由于扩散金属催化剂而导致的多晶硅层; 去除覆盖层; 图案化多晶硅层以形成半导体层; 在基板上形成栅极绝缘层和栅电极; 将p型杂质离子注入到半导体层中; 以及将吸气材料注入到所述半导体层中，并进行第二退火处理以除去所述金属催化剂。这里，p型杂质离子以6×10 3 / cm 2至5×10 15 / cm 2的剂量注入， / SUP>，并且吸除材料以1×10 11 / cm 2至3×10 15 / cm 2的剂量注入， / SUP>。

54. 发明授权

US09899730B2 Broadband antenna in the crash pad for vehicle 有权
公开(公告)号：US09899730B2
公开(公告)日：2018-02-20
申请号：US15600239
申请日：2017-05-19
申请人： Tae Hoon Yang , Sung Min Cho , Sang A Ju , Byeong Chan Yu , Sang Hoon Lim , Jin Kyu Hwang
发明人： Tae Hoon Yang , Sung Min Cho , Sang A Ju , Byeong Chan Yu , Sang Hoon Lim , Jin Kyu Hwang
IPC分类号： H01Q1/32 , H01Q5/371 , H04B1/3827 , H04B1/40 , H01Q21/28 , H01Q21/30
CPC分类号： H01Q1/3291 , H01Q5/371 , H01Q9/40 , H01Q21/28 , H01Q21/30 , H04B1/3827 , H04B1/40
摘要： Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

55. 发明授权

US08551827B2 Method of fabricating organic light emitting diode display device 失效
标题翻译：制造有机发光二极管显示装置的方法
公开(公告)号：US08551827B2
公开(公告)日：2013-10-08
申请号：US13771656
申请日：2013-02-20
申请人： Yong-Hwan Park , Kyu-Sik Cho , Sang-Ho Moon , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Bo-Kyung Choi , Won-Kyu Lee , Yun-Gyu Lee , Joon-Hoo Choi
发明人： Yong-Hwan Park , Kyu-Sik Cho , Sang-Ho Moon , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Bo-Kyung Choi , Won-Kyu Lee , Yun-Gyu Lee , Joon-Hoo Choi
IPC分类号： H01L21/00
CPC分类号： H01L27/1251 , H01L27/1277 , H01L27/1285 , H01L27/3262
摘要： An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.
摘要翻译：一种有机发光二极管显示装置及其制造方法，所述装置包括基板，所述基板包括像素部分和电路部分; 在所述基板的像素部分上的第一半导体层和第二半导体层; 在所述基板的整个表面上的栅极绝缘层; 栅绝缘层上的栅电极，分别对应于第一半导体层和第二半导体层的栅电极; 与栅电极绝缘的源/漏电极，源/漏电极分别连接到第一和第二半导体层; 连接到第一半导体层的源极/漏极的第一电极; 第一电极上的有机层; 有机层上的第二层; 以及在第一半导体层下面的金属催化剂层。

56. 发明授权

US08409887B2 Organic light emitting diode display device and method of fabricating the same 有权
公开(公告)号：US08409887B2
公开(公告)日：2013-04-02
申请号：US12713846
申请日：2010-02-26
申请人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
发明人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

57. 发明授权

US08318523B2 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08318523B2
公开(公告)日：2012-11-27
申请号：US12405466
申请日：2009-03-17
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
IPC分类号： H01L29/04
CPC分类号： H01L29/78615 , H01L27/1277 , H01L29/4908 , H01L29/66757
摘要： A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.
摘要翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的OLED显示装置。薄膜晶体管包括基板，设置在基板上并具有沟道区，源极和漏极区以及体接触区的半导体层，设置在半导体层上以露出本体接触区的栅绝缘层，硅层，设置在栅极绝缘层上并与由栅极绝缘层暴露的体接触区域接触，设置在硅层上的栅极电极，设置在栅电极上的层间绝缘层，以及设置在层间绝缘层上的源电极和漏电极并且与所述源极和漏极区电连接，其中所述体接触区域形成在所述半导体层的边缘区域中。

58. 发明授权

US08253141B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08253141B2
公开(公告)日：2012-08-28
申请号：US12502413
申请日：2009-07-14
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee
IPC分类号： H01L29/76 , H01L29/04 , H01L27/01 , H01L31/036 , H01L31/0376
CPC分类号： H01L29/66757 , H01L21/02672 , H01L27/1277 , H01L29/41733 , H01L29/78645 , H01L29/78696
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.
摘要翻译：薄膜晶体管（TFT），其制造方法以及具有TFT的有机发光二极管（OLED）显示装置。 TFT包括：基板; 设置在基板上的多晶硅（poly-Si）半导体层，包括源极，漏极和沟道区，结晶诱导金属，设置在半导体层的相对边缘上的第一吸杂位置和与第一个吸气场; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与半导体层的源极和漏极区域电连接的源极和漏极。

59. 发明申请

US20120088340A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHTING EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20120088340A1
公开(公告)日：2012-04-12
申请号：US13333587
申请日：2011-12-21
申请人： Byoung-Keon PARK , Jin-Wook SEO , Tae-Hoon YANG , Kil-Won LEE , Dong-Hyun LEE
发明人： Byoung-Keon PARK , Jin-Wook SEO , Tae-Hoon YANG , Kil-Won LEE , Dong-Hyun LEE
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L27/1277 , H01L29/66757
摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.
摘要翻译：薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。体接触区域形成在半导体层的边缘中。

60. 发明申请

US20120001156A1 ORGANIC LIGHT EMITTING DIODE DISPLAY 审中-公开
标题翻译：有机发光二极管显示
公开(公告)号：US20120001156A1
公开(公告)日：2012-01-05
申请号：US13077045
申请日：2011-03-31
申请人： Kyu-Sik CHO , Won-Kyu LEE , Tae-Hoon YANG , Byoung-Kwon CHOO , Sang-Ho MOON , Bo-Kyung CHOI , Yong-Hwan PARK , Joon-Hoo CHOI , Min-Chul SHIN , Yun-Gyu LEE
发明人： Kyu-Sik CHO , Won-Kyu LEE , Tae-Hoon YANG , Byoung-Kwon CHOO , Sang-Ho MOON , Bo-Kyung CHOI , Yong-Hwan PARK , Joon-Hoo CHOI , Min-Chul SHIN , Yun-Gyu LEE
IPC分类号： H01L51/52
CPC分类号： H01L27/3279 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3262 , H01L27/3265
摘要： An organic light emitting diode display is disclosed. The organic light emitting diode display includes: a substrate including a first region and a second region, a first gate electrode formed over the first region, a second gate electrode formed over the second region, a first gate insulator formed on the first gate electrode, a second gate insulator formed on the second gate electrode, a first semiconductor layer formed on the first gate insulator, the first semiconductor layer including a first channel region, a second semiconductor layer formed on the second gate insulator, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first etching stop layer formed over the first channel region and surrounded by the interlayer insulator, a second etching stop layer formed over the second channel region and surrounded by the interlayer insulator, a first source electrode and a first drain electrode contacting the first semiconductor layer through the interlayer insulator, and a second source electrode and a second drain electrode contacting the second semiconductor layer through the interlayer insulator.
摘要翻译：公开了一种有机发光二极管显示器。有机发光二极管显示器包括：包括第一区域和第二区域的基板，形成在第一区域上的第一栅极电极，形成在第二区域上的第二栅极电极，形成在第一栅电极上的第一栅极绝缘体，形成在所述第二栅电极上的第二栅极绝缘体，形成在所述第一栅极绝缘体上的第一半导体层，所述第一半导体层包括第一沟道区，形成在所述第二栅极绝缘体上的第二半导体层，所述第二半导体层包括第二栅极绝缘体，沟道区域，形成在所述衬底上并且在所述第一和第二半导体层的至少一部分上方的层间绝缘体，形成在所述第一沟道区域上并被所述层间绝缘体包围的第一蚀刻停止层，形成在所述第二沟槽区上的第二蚀刻停止层沟道区域并被层间绝缘体包围，第一源电极和与其接触的第一漏电极 e通过层间绝缘体的第一半导体层，以及通过层间绝缘体与第二半导体层接触的第二源电极和第二漏电极。

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