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51. 发明授权

US09817550B2 System for providing cloud streaming-based service menu and method for same 有权
公开(公告)号：US09817550B2
公开(公告)日：2017-11-14
申请号：US14365505
申请日：2012-04-30
申请人： Tae Meon Bae , Hyun Sig Na , Sang Woo Rhie , Sang Bum Lee
发明人： Tae Meon Bae , Hyun Sig Na , Sang Woo Rhie , Sang Bum Lee
IPC分类号： G06F15/00 , G06F13/00 , G06F3/0482 , G06Q50/10 , H04L29/08 , H04L29/06
CPC分类号： G06F3/0482 , G06Q50/10 , H04L65/4084 , H04L67/02 , H04L67/1002
摘要： A system for providing a cloud streaming-based service menu, a method and a terminal device. The terminal device selects a particular step in a step-by-step service menu to make a request for driving a content and the service device, in response to the request, provides content access information and menu step information corresponding to the particular step selected and initializes a step in the step-by-step service menu provided to the terminal device for switching a state of the service menu to a state in which an additional access of another terminal device is possible, so as to provide the initialized step-by-step service menu to another initially accessed terminal device. When the terminal device re-accesses, the service device will provide the service menu of the particular step corresponding to the menu step information to another accessed terminal device.

52. 发明授权

US09117700B2 3-D nonvolatile memory devices and methods of manufacturing the same 有权
标题翻译： 3-D非易失性存储器件及其制造方法
公开(公告)号：US09117700B2
公开(公告)日：2015-08-25
申请号：US13601531
申请日：2012-08-31
申请人： Sang Hyun Oh , Seiichi Aritome , Sang Bum Lee
发明人： Sang Hyun Oh , Seiichi Aritome , Sang Bum Lee
IPC分类号： G11C5/02 , H01L27/115 , H01L21/822 , G11C16/04 , G11C16/14
CPC分类号： H01L27/11556 , G11C16/0408 , G11C16/14 , H01L21/8221 , H01L27/11524 , H01L27/1157 , H01L27/11578 , H01L27/11582
摘要： A three-dimensional (3-D) nonvolatile memory device includes a channel layer protruded from a substrate, a plurality of memory cells stacked along the channel layer, a source line coupled to the end of one side of the channel layer, a bit line coupled to the end of the other side of the channel layer, a first junction interposed between the end of one side of the channel layer and the source line and configured to have a P type impurity doped therein, and a second junction interposed between the end of the other side of the channel layer and the bit line and configured to have an N type impurity doped therein.
摘要翻译：三维（3-D）非易失性存储器件包括从衬底突出的沟道层，沿着沟道层堆叠的多个存储单元，耦合到沟道层一侧的端部的源极线，位线耦合到沟道层的另一侧的端部，插入在沟道层的一侧的端部和源极线之间并且被配置为在其中掺杂有P型杂质的第一结，以及插入在端部之间的第二结的沟道层的另一侧和位线，并且被配置为在其中掺杂有N型杂质。

53. 发明授权

US08853773B2 Semiconductor device, memory system including the same, and method of manufacturing the same 有权
标题翻译：半导体器件，包括其的存储器系统及其制造方法
公开(公告)号：US08853773B2
公开(公告)日：2014-10-07
申请号：US13600020
申请日：2012-08-30
申请人： Sang Bum Lee
发明人： Sang Bum Lee
IPC分类号： H01L29/788 , H01L27/115
CPC分类号： H01L27/11582 , H01L27/11568 , H01L29/66666 , H01L29/66833
摘要： The semiconductor device includes a vertical channel layer formed on a substrate; conductive layer patterns and insulating layer patterns alternately formed around a length of each of the vertical channel layer; and a charge storing layer pattern formed between each of the vertical channel layers and the conductive layer patterns, where each of the charge storing layer patterns is isolated by the insulating layer patterns.
摘要翻译：半导体器件包括形成在衬底上的垂直沟道层; 交替地形成在每个垂直沟道层的长度上的导电层图案和绝缘层图案; 以及形成在每个垂直沟道层和导电层图案之间的电荷存储层图案，其中每个电荷存储层图案被绝缘层图案隔离。

54. 发明授权

US08759921B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08759921B2
公开(公告)日：2014-06-24
申请号：US13455504
申请日：2012-04-25
申请人： Soon Ok Seo , Sang Bum Lee , Se Jun Kim
发明人： Soon Ok Seo , Sang Bum Lee , Se Jun Kim
IPC分类号： H01L21/70
CPC分类号： H01L29/7926 , H01L27/11565 , H01L27/11582
摘要： A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.
摘要翻译：半导体存储器件包括形成在包括源极区域并且通过狭缝彼此分离的衬底之上的多个存储器块，耦合到存储块的串并设置在存储器块上的多个位线，以及源极接触线形成在狭缝内，分别耦合到源极区域，并且设置在与多个位线交叉的方向上。

55. 发明授权

US08476639B2 Group III nitride semiconductor and group III nitride semiconductor structure 有权
标题翻译： III族氮化物半导体和III族氮化物半导体结构
公开(公告)号：US08476639B2
公开(公告)日：2013-07-02
申请号：US13323365
申请日：2011-12-12
申请人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L29/15
CPC分类号： H01L21/268 , H01L33/0062 , H01L33/16
摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
摘要翻译：提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

56. 发明申请

US20120311527A1 SYSTEM AND METHOD OF PROVIDING IN-APP SERVICE 有权
标题翻译：提供APP服务的系统和方法
公开(公告)号：US20120311527A1
公开(公告)日：2012-12-06
申请号：US13483888
申请日：2012-05-30
申请人： Sang-Bum LEE
发明人： Sang-Bum LEE
IPC分类号： G06F9/44
CPC分类号： G06F8/30 , G06F17/30902
摘要： In order for an in-app service providing system comprised of an in-app service server and a content server to provide a customized service to a user, when the in-app service server receives user information from a user terminal of the user, it checks whether or not the received user information has been previously stored. When the user information has been stored, user log information corresponding to the user information is received from the content server, and the in-app service server selects content to be provided to the user based on the user information and the user log information. When the content to server generates a template including content, the in-app service server provides the template to the user terminal, thus providing a user-customized service.
摘要翻译：为了使由应用内服务服务器和内容服务器组成的应用内服务提供系统向用户提供定制服务，当应用内服务服务器从用户的用户终端接收用户信息时，检查所接收的用户信息是否已经被预先存储。当存储了用户信息时，从内容服务器接收与用户信息对应的用户日志信息，并且应用内服务服务器根据用户信息和用户日志信息选择要提供给用户的内容。当服务器的内容生成包含内容的模板时，应用内服务服务器将该模板提供给用户终端，从而提供用户定制的服务。

57. 发明申请

US20120273965A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120273965A1
公开(公告)日：2012-11-01
申请号：US13455504
申请日：2012-04-25
申请人： Soon Ok SEO , Sang Bum Lee , Se Jun Kim
发明人： Soon Ok SEO , Sang Bum Lee , Se Jun Kim
IPC分类号： H01L23/522 , H01L21/20 , H01L21/768
CPC分类号： H01L29/7926 , H01L27/11565 , H01L27/11582
摘要： A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.
摘要翻译：半导体存储器件包括形成在包括源极区域并且通过狭缝彼此分离的衬底之上的多个存储器块，耦合到存储块的串并设置在存储器块上的多个位线，以及源极接触线形成在狭缝内，分别耦合到源极区域，并且设置在与多个位线交叉的方向上。

58. 发明申请

US20120168824A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20120168824A1
公开(公告)日：2012-07-05
申请号：US13277496
申请日：2011-10-20
申请人： Sang-Bum LEE
发明人： Sang-Bum LEE
IPC分类号： H01L27/092 , H01L21/336
CPC分类号： H01L27/11582 , H01L27/11565
摘要： A non-volatile memory device including a memory string including a plurality of memory cells coupled in series. The non-volatile memory device includes the memory string including a first semiconductor layer and a second conductive layer with a memory gate insulation layer therebetween, a first selection transistor comprising a second semiconductor layer coupled with one end of the first semiconductor layer, a second selection transistor comprising a third semiconductor layer coupled with the other end of the first semiconductor layer, and a fourth semiconductor layer contacting the first semiconductor layer in a region where the second conductive layer is not disposed.
摘要翻译：一种非易失性存储器件，包括包括串联耦合的多个存储器单元的存储器串。非易失性存储器件包括存储器串，其包括第一半导体层和其间具有存储栅极绝缘层的第二导电层，第一选择晶体管，包括与第一半导体层的一端耦合的第二半导体层，第二选择晶体管，包括与第一半导体层的另一端耦合的第三半导体层，以及在不设置第二导电层的区域中与第一半导体层接触的第四半导体层。

59. 发明申请

US20110297992A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20110297992A1
公开(公告)日：2011-12-08
申请号：US13213988
申请日：2011-08-19
申请人： Pun Jae CHOI , Ki Yeol Park , Sang Bum LEE , Seon Young MYOUNG , Myong Soo CHO
发明人： Pun Jae CHOI , Ki Yeol Park , Sang Bum LEE , Seon Young MYOUNG , Myong Soo CHO
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

60. 发明授权

US07929075B2 Liquid crystal display module and assembling method thereof 有权
标题翻译：液晶显示模块及其组装方法
公开(公告)号：US07929075B2
公开(公告)日：2011-04-19
申请号：US12265856
申请日：2008-11-06
申请人： Sang Bum Lee
发明人： Sang Bum Lee
IPC分类号： G02F1/1333
CPC分类号： G02F1/133308 , G02F2001/133311 , G02F2001/133314 , G02F2001/133317 , G02F2001/133325 , G02F2201/46 , G02F2201/503 , Y10T29/49963
摘要： A liquid crystal display module and an assembling method thereof are disclosed. The liquid crystal display module includes a panel guide for supporting a liquid crystal panel, the panel guide including a first fastening portion, support side members for holding opposite sides of a lamp irradiating light to the liquid crystal panel, respectively, each of the support side members including a second fastening portion having a foreign substance shield, and a bottom case including a third fastening portion having a case hole formed through a side surface of the bottom case, to receive the foreign substance shield.
摘要翻译：公开了一种液晶显示模块及其组装方法。液晶显示模块包括用于支撑液晶面板的面板引导件，面板引导件包括第一紧固部分，用于将照射光的灯的相对侧分别保持在液晶面板上的支撑侧构件，每个支撑侧包括具有异物屏蔽的第二紧固部分的部件和具有通过底壳的侧表面形成的壳孔的第三紧固部的底壳，以接收异物屏蔽。

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