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51. 发明授权

US08334575B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08334575B2
公开(公告)日：2012-12-18
申请号：US13122035
申请日：2008-10-03
申请人： Jean Philippe Laine , Patrice Besse , Alexis Huot-Marchand
发明人： Jean Philippe Laine , Patrice Besse , Alexis Huot-Marchand
IPC分类号： H01L27/11 , H01L21/8238 , H03K17/0812 , H03K17/16
CPC分类号： H03K17/08122 , H03K17/162
摘要： A semiconductor device comprises a switching element. The switching element comprises a first channel terminal, a second channel terminal and a switching terminal. One of the first and second channel terminals provides a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal. The semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device. When a negative current is encountered at the first channel terminal, the negative current causes both a voltage drop across the switching terminal and the first channel terminal and a voltage drop across the second channel terminal and the switching terminal.
摘要翻译：半导体器件包括开关元件。开关元件包括第一通道端子，第二通道端子和开关端子。第一和第二通道端子中的一个提供参考端子，并且开关元件布置成使得开关元件在第一通道端子和第二通道端子之间的阻抗取决于开关端子和参考端子两端的电压。半导体器件还包括可操作地耦合在第一沟道端子和开关端子之间的第一电阻元件和可操作地耦合在半导体器件的开关端子和第二沟道端子之间的第二电阻元件。当在第一通道端子处遇到负电流时，负电流导致开关端子和第一通道端子之间的电压降以及跨越第二通道端子和开关端子的电压降。

52. 发明申请

US20110180876A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US20110180876A1
公开(公告)日：2011-07-28
申请号：US13122035
申请日：2008-10-03
申请人： Jean Philippe Laine , Patrice Besse , Alexis Huot-Marchand
发明人： Jean Philippe Laine , Patrice Besse , Alexis Huot-Marchand
IPC分类号： H01L27/06
CPC分类号： H03K17/08122 , H03K17/162
摘要： A semiconductor device comprises a switching element. The switching element comprises a first channel terminal, a second channel terminal and a switching terminal. One of the first and second channel terminals provides a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal. The semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device. When a negative current is encountered at the first channel terminal, the negative current causes both a voltage drop across the switching terminal and the first channel terminal and a voltage drop across the second channel terminal and the switching terminal.
摘要翻译：半导体器件包括开关元件。开关元件包括第一通道端子，第二通道端子和开关端子。第一和第二通道端子中的一个提供参考端子，并且开关元件布置成使得开关元件在第一通道端子和第二通道端子之间的阻抗取决于开关端子和参考端子两端的电压。半导体器件还包括可操作地耦合在第一沟道端子和开关端子之间的第一电阻元件和可操作地耦合在半导体器件的开关端子和第二沟道端子之间的第二电阻元件。当在第一通道端子处遇到负电流时，负电流导致开关端子和第一通道端子之间的电压降以及跨越第二通道端子和开关端子的电压降。

53. 发明申请

US20110175592A1 BUS DRIVER FOR AVOIDING AN OVERVOLTAGE 有权
标题翻译：用于避免过电压的总线驱动器
公开(公告)号：US20110175592A1
公开(公告)日：2011-07-21
申请号：US13120874
申请日：2008-09-30
申请人： Alexis Huot-Marchand , Hamada Ahmed , Patrice Besse , Nicolas Jarrige
发明人： Alexis Huot-Marchand , Hamada Ahmed , Patrice Besse , Nicolas Jarrige
IPC分类号： G05F3/02
CPC分类号： H03K17/167 , H03K17/0822 , H03K19/00361
摘要： An electrical circuit for manipulating at least one of a voltage and a current on a bus wire comprises a first switch having a first gate, a first source, and a first potential reduction unit. The first potential reduction unit is suitable for lowering a potential difference between the first gate and the first source of the first switch, wherein the lowering of the potential difference is caused by a shutting-off of a first control voltage.
摘要翻译：用于操纵总线上的电压和电流中的至少一个的电路包括具有第一栅极，第一源极和第一电位降低单元的第一开关。第一电位降低单元适于降低第一开关的第一栅极和第一源极之间的电位差，其中电位差的降低是由第一控制电压的关断引起的。

54. 发明申请

US20110084339A1 SEMICONDUCTOR DEVICE AND METHOD OF ELECTROSTATIC DISCHARGE PROTECTION THEREFOR 有权
标题翻译：半导体器件及其静电放电保护方法
公开(公告)号：US20110084339A1
公开(公告)日：2011-04-14
申请号：US12995325
申请日：2008-06-20
申请人： Patrice Besse , Stephane Greveau-Boury , Alexis Huot-Marchand
发明人： Patrice Besse , Stephane Greveau-Boury , Alexis Huot-Marchand
IPC分类号： H01L23/60
CPC分类号： H01L27/0255 , H01L2924/0002 , H03K17/08142 , H03K17/0822 , H01L2924/00
摘要： A semiconductor device comprises at least one switching element. The at least one switching element comprises a first channel terminal, a second channel terminal and a switching terminal, the switching element being arranged such that an impedance of the switching element between the first and second channel terminals is dependant upon a voltage across the switching terminal and the first channel terminal. The semiconductor device further comprises a resistance element operably coupled between the first channel terminal of the at least one switching element and a reference node, and a clamping structure operably coupled between the switching terminal of the switching element and the reference node. The resistance element and the clamping structure are arranged such that, when current flowing through the at least one switching element, between the first and second channel terminals, exceeds a threshold current value, a voltage drop across the resistance element exceeds a difference between (i) a clamping voltage of the clamping structure and (ii) a switching voltage threshold of the at least one switching element, causing the impedance between the first and second channel terminals of the at least one switching component to increase.
摘要翻译：半导体器件包括至少一个开关元件。所述至少一个开关元件包括第一通道端子，第二通道端子和开关端子，所述开关元件布置成使得所述开关元件在所述第一和第二通道端子之间的阻抗取决于所述开关端子两端的电压和第一个通道终端。半导体器件还包括可操作地耦合在至少一个开关元件的第一通道端子和参考节点之间的电阻元件以及可操作地耦合在开关元件的开关端子与参考节点之间的钳位结构。电阻元件和钳位结构被布置成使得当流过第一和第二通道端子之间的至少一个开关元件的电流超过阈值电流值时，电阻元件两端的电压降超过（i ）钳位结构的钳位电压和（ii）所述至少一个开关元件的开关电压阈值，使所述至少一个开关元件的第一和第二通道端子之间的阻抗增加。

55. 发明申请

US20100127305A1 ESD PROTECTION DEVICE AND METHOD OF FORMING AN ESD PROTECTION DEVICE 有权
标题翻译： ESD保护装置及形成ESD保护装置的方法
公开(公告)号：US20100127305A1
公开(公告)日：2010-05-27
申请号：US12598282
申请日：2007-05-04
申请人： Philippe Renaud , Patrice Besse , Amaury Gendron , Nicolas Nolhier
发明人： Philippe Renaud , Patrice Besse , Amaury Gendron , Nicolas Nolhier
IPC分类号： H01L23/60 , H01L29/08 , H01L29/06
CPC分类号： H01L29/0821 , H01L27/0259 , H01L29/0619 , H01L29/1008 , H01L29/6625 , H01L29/66681 , H01L29/735 , H01L29/7816 , H01L2924/0002 , H01L2924/00
摘要： An ESD protection device, which is arranged to be active at a triggering voltage (Vt1) for providing ESD protection, comprises a first region of the first conductivity type formed in a semiconductor layer of the first conductivity type, the first region extending from a surface of the semiconductor layer and being coupled to a first current electrode (C) of the semiconductor device, a well region of a second conductivity type formed in the semiconductor layer extending from the surface of the semiconductor layer, and a second region of the second conductivity type formed in the well region, the second region being coupled to a second current electrode (B). The ESD protection device further comprises a floating region of the second conductivity type formed in the semiconductor layer between the first current electrode (C) and the well region and extending from the surface of the semiconductor layer a predetermined depth. The floating region is separated from the well region by a predetermined distance, a value of which is selected such that the floating region is located within a depletion region of a PN junction between the well region and the semiconductor layer when the ESD protection device is active. The floating region has a doping concentration selected such that the floating region is not fully depleted when the ESD protection device is active and the predetermined depth is selected such that the floating region modifies a space charge region near the PN junction. An ESD protection device according to a second embodiment is also disclosed.
摘要翻译：被布置为在用于提供ESD保护的触发电压（Vt1）下有效的ESD保护器件包括形成在第一导电类型的半导体层中的第一导电类型的第一区域，第一区域从表面并且耦合到所述半导体器件的第一电流电极（C），形成在从所述半导体层的表面延伸的所述半导体层中的第二导电类型的阱区域和所述第二导电性的第二区域形成在所述阱区中，所述第二区耦合到第二电流电极（B）。 ESD保护装置还包括形成在第一电流电极（C）和阱区域之间的半导体层中并且从半导体层的表面延伸预定深度的第二导电类型的浮动区域。浮动区域与阱区分离预定距离，其值被选择为使得当ESD保护器件处于活动状态时，浮动区域位于阱区域和半导体层之间的PN结的耗尽区域内。浮动区域具有选择的掺杂浓度，使得当ESD保护器件有效并且选择预定深度使得浮动区域修改PN结附近的空间电荷区域时，浮动区域未完全耗尽。还公开了根据第二实施例的ESD保护装置。

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