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    • 51. 发明授权
    • Microstructure and manufacturing method of the same
    • 微结构和制造方法相同
    • US07683429B2
    • 2010-03-23
    • US11420344
    • 2006-05-25
    • Mayumi YamaguchiKonami Izumi
    • Mayumi YamaguchiKonami Izumi
    • H01L21/30
    • B81C1/00142
    • A microstructure which forms a micromachine is formed by using a silicon wafer as a mainstream, conventionally. In view of this, the invention provides a manufacturing method of a micromachine in which a microstructure is formed over an insulating substrate.The invention provides a micromachine including a layer containing polycrystalline silicon which is crystallized by thermal crystallization or laser crystallization using a metal element and including a space over or under the layer. Such polycrystalline silicon can be formed over an insulating surface and has high strength, therefore, it can be used as a microstructure as well. As a result, a microstructure formed over an insulating substrate or a micromachine provided with a microstructure can be provided.
    • 常规地使用硅晶片作为主流来形成微机械的微结构。 鉴于此,本发明提供了一种微机械的制造方法,其中在绝缘基板上形成微结构。 本发明提供一种微机械,其包括含有多晶硅的层,其通过使用金属元素的热结晶或激光结晶而结晶,并且在该层上或下方包含空间。 这种多晶硅可以形成在绝缘表面上并具有高强度,因此也可以用作微结构。 结果,可以提供在具有微结构的绝缘基板或微机械体上形成的微观结构。
    • 57. 发明申请
    • MANUFACTURING METHOD OF MICROSTRUCTURE AND MICROELECTROMECHANICAL SYSTEM
    • 微结构和微电子系统的制造方法
    • US20070111365A1
    • 2007-05-17
    • US11557353
    • 2006-11-07
    • Fuminori TATEISHIKonami IZUMIMayumi YAMAGUCHI
    • Fuminori TATEISHIKonami IZUMIMayumi YAMAGUCHI
    • H01L21/00
    • B81C1/00476
    • To reduce the number of photomasks which are used to form sacrificial layers for producing spaces of a microstructure, thereby reducing the manufacturing cost. Sacrificial layers are formed by using resist masks which are patterned with the same photomask. Specifically, after forming a first sacrificial layer by etching using a resist mask, a second sacrificial layer is formed by etching using a resist mask which is pattered with same photomask as the resist mask of the first sacrificial layer. By deforming one of the resist masks before etching its corresponding sacrificial layer, for example by increasing or reducing the external dimension of the resist mask, sacrificial layers having different sizes from each other can be formed.
    • 为了减少用于形成用于形成微结构的空间的牺牲层的光掩模的数量,从而降低制造成本。 牺牲层通过使用用相同光掩模图案化的抗蚀剂掩模形成。 具体而言,在使用抗蚀剂掩模蚀刻形成第一牺牲层之后,通过使用与第一牺牲层的抗蚀剂掩模相同的光掩模图案化的抗蚀剂掩模进行蚀刻来形成第二牺牲层。 在蚀刻其相应的牺牲层之前,通过使抗蚀剂掩模之一变形,例如通过增加或减小抗蚀剂掩模的外部尺寸,可以形成具有彼此不同尺寸的牺牲层。