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51. 发明申请

US20120238068A1 SEMICONDUCTOR DEVICE INCLUDING A STRESS FILM 有权
标题翻译：包含应力膜的半导体器件
公开(公告)号：US20120238068A1
公开(公告)日：2012-09-20
申请号：US13486877
申请日：2012-06-01
申请人： Masafumi TSUTSUI , Hiroyuki Umimoto , Kaori Akamatsu
发明人： Masafumi TSUTSUI , Hiroyuki Umimoto , Kaori Akamatsu
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L27/092
摘要： A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
摘要翻译：半导体器件包括由nMISFET的源极/漏极区域上的氧化硅膜形成的第一型内部应力膜和在pMISFET的源极/漏极区域上由TEOS膜形成的第二类型内部应力膜。在nMISFET的沟道区域中，由于第一型内应力膜，电子的移动方向产生拉伸应力，使得电子的迁移率增加。在pMISFET的沟道区域中，由于第二类型的内部应力膜，在孔的移动方向上产生压缩应力，使得孔的迁移率增加。

52. 发明申请

US20120015601A1 RADIO COMMUNICATION SYSTEM, RELAY DEVICE, CONTROL DEVICE, AND COMMUNICATION METHOD 审中-公开
标题翻译：无线电通信系统，继电器装置，控制装置和通信方法
公开(公告)号：US20120015601A1
公开(公告)日：2012-01-19
申请号：US13181784
申请日：2011-07-13
申请人： Masafumi TSUTSUI
发明人： Masafumi TSUTSUI
IPC分类号： H04B7/14
CPC分类号： H04B7/15535
摘要： A radio communication system including a first communication device configured to transmit a signal, a relay device which includes a receiver configured to receive the transmitted signal, an amplifier configured to amplify the received signal according to a gain determined by a processor included in a control device, and a transmitter configured to transmit the amplified signal to a second communication device, the second communication device being configured to receive the amplified signal, and the transmitted signal, which is transmitted directly from the first communication device, and the control device being configured to improve a reception quality of the amplified signal and the directly transmitted signal.
摘要翻译：一种无线电通信系统，包括被配置为发送信号的第一通信设备，包括被配置为接收所发送的信号的接收器的中继设备，被配置为根据由控制设备中包括的处理器确定的增益放大接收信号的放大器以及被配置为将放大的信号发送到第二通信设备的发射机，所述第二通信设备被配置为接收所述放大的信号，以及所述发送的信号，其直接从所述第一通信设备发送，并且所述控制设备被配置为提高放大信号和直接发送信号的接收质量。

53. 发明授权

US07999331B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US07999331B2
公开(公告)日：2011-08-16
申请号：US12961168
申请日：2010-12-06
申请人： Susumu Akamatsu , Masafumi Tsutsui , Yoshinori Takami
发明人： Susumu Akamatsu , Masafumi Tsutsui , Yoshinori Takami
IPC分类号： H01L31/062 , H01L21/8238
CPC分类号： H01L21/823462 , H01L21/823493 , H01L27/11
摘要： In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

54. 发明申请

US20110001193A1 SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 审中-公开
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US20110001193A1
公开(公告)日：2011-01-06
申请号：US12882643
申请日：2010-09-15
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L27/092
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

55. 发明申请

US20100046667A1 WIRELESS COMMUNICATION APPARATUS AND WIRELESS COMMUNICATING METHOD 失效
标题翻译：无线通信设备和无线通信方法
公开(公告)号：US20100046667A1
公开(公告)日：2010-02-25
申请号：US12613002
申请日：2009-11-05
申请人： Masafumi TSUTSUI
发明人： Masafumi TSUTSUI
IPC分类号： H04L25/03
CPC分类号： H01Q3/2605 , H01Q1/246 , H01Q3/267 , H04B7/0617 , H04B7/0639 , H04L25/0204 , H04L25/03343 , H04L2025/03426 , H04L2025/03802
摘要： A wireless communication apparatus of a base station uses antennas for multiple systems, forms a multi-beam, transmits data to a mobile station, and includes a code book configured to store therein beamforming information; a pre-coder that reads the code book and executes a process of forming a given beam for the data; a control unit that, based on feedback information to correct variations in phase occurring at transmitting circuits respectively corresponding to each of the systems, performs control such that the beamforming information to correct the variations in phase is read from the code book; and a phase correcting unit that corrects a phase of the multi-beam formed by the pre-coder, based on the feedback information and such that relations among the phases of the multi-beam become substantially linear.
摘要翻译：基站的无线通信装置使用多个系统的天线，形成多波束，向移动台发送数据，并且包括配置为在其中存储波束成形信息的码本; 读取代码簿并执行为数据形成给定波束的处理的预编码器; 控制单元，其基于反馈信息来校正发生在与每个系统相对应的发射电路处的相位变化，执行控制，使得从码本中读取纠正相位变化的波束成形信息; 以及相位校正单元，其基于反馈信息校正由预编码器形成的多波束的相位，并且使得多波束的相位之间的关系变得基本上线性。

56. 发明授权

US07652346B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07652346B2
公开(公告)日：2010-01-26
申请号：US11939027
申请日：2007-11-13
申请人： Ken Suzuki , Masafumi Tsutsui
发明人： Ken Suzuki , Masafumi Tsutsui
IPC分类号： H01L21/76
CPC分类号： H01L21/823807 , H01L21/823878 , H01L29/6656 , H01L29/6659 , H01L29/7846
摘要： A semiconductor device includes an active region formed on a semiconductor substrate, an element isolation region formed on the semiconductor substrate so as to surround the active region, and a gate electrode formed on the active region. A region that causes tensile stress so as to improve carrier mobility in the active region is provided in the element isolation region.
摘要翻译：半导体器件包括形成在半导体衬底上的有源区，形成在半导体衬底上以围绕有源区的元件隔离区，以及形成在有源区上的栅电极。在元件隔离区域中设置有引起拉伸应力以改善有源区域中的载流子迁移率的区域。

57. 发明申请

US20090200582A1 SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 有权
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US20090200582A1
公开(公告)日：2009-08-13
申请号：US12405668
申请日：2009-03-17
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L29/40
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

58. 发明授权

US07557414B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07557414B2
公开(公告)日：2009-07-07
申请号：US11455649
申请日：2006-06-20
申请人： Ken Suzuki , Masafumi Tsutsui
发明人： Ken Suzuki , Masafumi Tsutsui
IPC分类号： H01L29/94
CPC分类号： H01L21/823807 , H01L21/823864 , H01L21/823878
摘要： In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate electrode, a first sidewall insulating film including at least a first sidewall, an n-type extension diffusion layer, and an n-type impurity diffusion layer. The first sidewall is not formed at the side faces of the first gate electrode on the p-type semiconductor layer. An insulating film having tensile stress is formed on the semiconductor substrate so as to cover the first MIS transistor.
摘要翻译：在半导体衬底上具有第一MIS晶体管的半导体器件中，第一MIS晶体管包括p型半导体层，第一栅极绝缘膜，第一栅电极，至少包括第一侧壁的第一侧壁绝缘膜， n型延伸扩散层和n型杂质扩散层。第一侧壁不形成在p型半导体层上的第一栅电极的侧面。在半导体衬底上形成具有拉伸应力的绝缘膜，以覆盖第一MIS晶体管。

59. 发明申请

US20090050981A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090050981A1
公开(公告)日：2009-02-26
申请号：US12170191
申请日：2008-07-09
申请人： Masafumi Tsutsui , Hiroyuki Umimoto , Kaori Akamatsu
发明人： Masafumi Tsutsui , Hiroyuki Umimoto , Kaori Akamatsu
IPC分类号： H01L47/00
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L27/092
摘要： A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
摘要翻译：半导体器件包括由nMISFET的源极/漏极区域上的氧化硅膜形成的第一型内部应力膜和在pMISFET的源极/漏极区域上由TEOS膜形成的第二类型内部应力膜。在nMISFET的沟道区域中，由于第一型内应力膜，电子的移动方向产生拉伸应力，使得电子的迁移率增加。在pMISFET的沟道区域中，由于第二类型的内部应力膜，在孔的移动方向上产生压缩应力，使得孔的迁移率增加。

60. 发明授权

US07378718B2 Fuse element with adjustable resistance 有权
标题翻译：保险丝元件可调电阻
公开(公告)号：US07378718B2
公开(公告)日：2008-05-27
申请号：US11091469
申请日：2005-03-29
申请人： Masafumi Tsutsui
发明人： Masafumi Tsutsui
IPC分类号： H01L23/62
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A fuse element has a first region, a second region and a third region. The first region is a portion for isolating circuitry. The second region and the third region are respectively connected to both ends of the first region and have a wider pattern width than that of the first region. The second region, the first region and a part of the third region of the fuse element are formed on a thick insulating film, while the remaining part of the third region is formed on a thin insulating film. Heat generated in the fuse element is less likely to be released to a semiconductor substrate through the thick insulating film, but is more likely to be released to the semiconductor substrate through the thin insulating film. The fuse element therefore has a large temperature change and a large temperature gradient. This facilitates electrical blowing of the first region.
摘要翻译：熔丝元件具有第一区域，第二区域和第三区域。第一区域是用于隔离电路的部分。第二区域和第三区域分别连接到第一区域的两端并且具有比第一区域更宽的图案宽度。第二区域，第一区域和熔丝元件的第三区域的一部分形成在厚的绝缘膜上，而第三区域的剩余部分形成在薄的绝缘膜上。在熔丝元件中产生的热不太可能通过厚的绝缘膜被释放到半导体衬底，但更可能通过薄的绝缘膜被释放到半导体衬底。因此，熔丝元件具有较大的温度变化和较大的温度梯度。这有助于第一区域的电吹风。

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