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    • 52. 发明授权
    • Thin film transistor and a fabricating method therefor
    • 薄膜晶体管及其制造方法
    • US6165823A
    • 2000-12-26
    • US873300
    • 1997-06-11
    • Hyung Tae KimWoun Suck Yang
    • Hyung Tae KimWoun Suck Yang
    • H01L21/336H01L29/786H01L21/00
    • H01L29/6675H01L29/78642Y10S257/90Y10S257/903
    • A thin film transistor includes a first insulating layer and a first conductive layer formed on a semiconductor substrate, a second insulating layer, a second conductive layer and a third insulating layer sequentially formed on the first conductive layer, a contact hole formed in the second insulating layer, second conductive layer and third insulating layer, a gate insulating layer formed along the sidewall of the contact hole, and a third conductive layer formed on the contact hole formed with the gate insulating layer thereon and surface of the third insulating layer to be used as a channel region and a source region by implanting an impurity, in which a drain region, a gate electrode and the source region are stacked, or vertically aligned, on the substrate to allow a cell to occupy a small area for accomplishing high packing density of the cell and permit the gate electrode to encircle the channel region for improving a characteristic of the transistor, thereby stabilizing the cell.
    • 薄膜晶体管包括第一绝缘层和形成在半导体衬底上的第一导电层,顺序地形成在第一导电层上的第二绝缘层,第二导电层和第三绝缘层,形成在第二绝缘层中的接触孔 层,第二导电层和第三绝缘层,沿着接触孔的侧壁形成的栅极绝缘层和形成在其上的栅极绝缘层的接触孔上的第三导电层和要使用的第三绝缘层的表面 作为沟道区域和源极区域,通过将衬底上的漏极区域,栅极电极和源极区域堆叠或垂直对准的杂质注入到衬底上,以允许电池占据小面积以实现高填充密度 并且允许栅电极环绕沟道区,以改善晶体管的特性,从而稳定晶体 l。
    • 55. 发明授权
    • Proportional to absolute temperature current generation circuit having higher temperature coefficient, display device including the same, and method thereof
    • 与具有较高温度系数的绝对温度电流产生电路的比例,包括其的显示装置及其方法
    • US08994444B2
    • 2015-03-31
    • US12149808
    • 2008-05-08
    • Seung Hwan BaekChang Hwe ChoiHyung Tae Kim
    • Seung Hwan BaekChang Hwe ChoiHyung Tae Kim
    • H01L35/00G05F3/30
    • G05F3/30
    • A proportional to absolute temperature (PTAT) current generation circuit may include a current mirror unit and/or a level control unit. The current mirror unit may be connected between a first power supply voltage, a first node, and/or a second node. The level control unit may be connected between the first node, the second node, and/or a second power supply voltage. The level control unit may be configured to control a level of an output current of the current mirror unit based on a voltage level of the first node and a voltage level of the second node. The level control unit may include a first transistor connected between the first node and the second power supply voltage, at least one second transistor connected between the second node and a third node, the at least one second transistor configured to operate in a weak inversion region, and/or a third transistor connected between the third node and the second power supply voltage.
    • 与绝对温度(PTAT)电流产生电路成正比可以包括电流镜单元和/或电平控制单元。 电流镜单元可以连接在第一电源电压,第一节点和/或第二节点之间。 电平控制单元可以连接在第一节点,第二节点和/或第二电源电压之间。 电平控制单元可以被配置为基于第一节点的电压电平和第二节点的电压电平来控制电流镜单元的输出电流的电平。 电平控制单元可以包括连接在第一节点和第二电源电压之间的第一晶体管,连接在第二节点和第三节点之间的至少一个第二晶体管,所述至少一个第二晶体管被配置为在弱反转区域 ,和/或连接在第三节点和第二电源电压之间的第三晶体管。