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51. 发明授权

US06800876B2 Group III nitride LED with undoped cladding layer (5000.137) 有权
标题翻译：具有无掺杂包层和多量子阱的III族氮化物LED
公开(公告)号：US06800876B2
公开(公告)日：2004-10-05
申请号：US09760635
申请日：2001-01-16
申请人： John Adam Edmond , Kathleen Marie Doverspike , Hua-shuang Kong , Michael John Bergmann
发明人： John Adam Edmond , Kathleen Marie Doverspike , Hua-shuang Kong , Michael John Bergmann
IPC分类号： H01L2922
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/32341
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.
摘要翻译：本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于有源层的带隙。半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。

52. 发明授权

US06582986B2 Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures 有权
公开(公告)号：US06582986B2
公开(公告)日：2003-06-24
申请号：US09934270
申请日：2001-08-21
申请人： Hua-Shuang Kong , John Adam Edmond , Kevin Ward Haberern , David Todd Emerson
发明人： Hua-Shuang Kong , John Adam Edmond , Kevin Ward Haberern , David Todd Emerson
IPC分类号： H01L2100
CPC分类号： H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/0265 , H01S5/3202 , H01S2304/12
摘要： A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.

53. 发明授权

US06534797B1 Group III nitride light emitting devices with gallium-free layers 有权
标题翻译：具有无镓层的III族氮化物发光器件
公开(公告)号：US06534797B1
公开(公告)日：2003-03-18
申请号：US09706057
申请日：2000-11-03
申请人： John Adam Edmond , Kathleen Marie Doverspike , Hua-shuang Kong , Michael John Bergmann
发明人： John Adam Edmond , Kathleen Marie Doverspike , Hua-shuang Kong , Michael John Bergmann
IPC分类号： H01L29205
CPC分类号： H01L33/32 , H01L33/007
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.
摘要翻译：本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。半导体结构包括III族氮化物的第一覆盖层，III族氮化物的第二覆盖层和位于第一和第二覆盖层之间的III族氮化物的有源层，并且其带隙小于第一和第二包覆层的各自的带隙。半导体结构的特征在于在这些结构层中的一个或多个中不存在镓。

54. 发明授权

US06492193B1 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure 有权
标题翻译：具有导电缓冲层间结构的碳化硅衬底上的III族氮化物光子器件
公开(公告)号：US06492193B1
公开(公告)日：2002-12-10
申请号：US09718958
申请日：2000-11-22
申请人： John Adam Edmond , Hua-Shuang Kong , Kathleen Marie Doverspike , Michelle Turner Leonard
发明人： John Adam Edmond , Hua-Shuang Kong , Kathleen Marie Doverspike , Michelle Turner Leonard
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02642
摘要： An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
摘要翻译：公开了一种具有III族氮化物有源层的光电器件，其包括碳化硅衬底; 具有III族氮化物活性层的光电二极管; 在碳化硅衬底和光电二极管之间选自氮化镓和氮化镓镓的缓冲结构; 以及应力吸收结构，其包括缓冲结构的晶体结构内的多个预定的应力消除区域，使得在缓冲结构中发生的应力诱导的裂纹发生在缓冲结构中的预定区域而不是其他地方。

55. 发明授权

US06201262B1 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure 失效
标题翻译：具有导电缓冲层间结构的碳化硅衬底上的III族氮化物光子器件
公开(公告)号：US06201262B1
公开(公告)日：2001-03-13
申请号：US08944547
申请日：1997-10-07
申请人： John Adam Edmond , Hua-Shuang Kong , Kathleen Marie Doverspike , Michelle Turner Leonard
发明人： John Adam Edmond , Hua-Shuang Kong , Kathleen Marie Doverspike , Michelle Turner Leonard
IPC分类号： H01L310312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02642
摘要： An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
摘要翻译：公开了一种具有III族氮化物有源层的光电器件，其包括碳化硅衬底; 具有III族氮化物活性层的光电二极管; 在碳化硅衬底和光电二极管之间选自氮化镓和氮化镓镓的缓冲结构; 以及应力吸收结构，其包括缓冲结构的晶体结构内的多个预定的应力消除区域，使得在缓冲结构中发生的应力诱导的裂纹发生在缓冲结构中的预定区域而不是其他地方。

56. 发明授权

US6120600A Double heterojunction light emitting diode with gallium nitride active layer 失效
标题翻译：双异质结发光二极管与氮化镓活性层
公开(公告)号：US6120600A
公开(公告)日：2000-09-19
申请号：US59649
申请日：1998-04-13
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L33/32 , C30B25/14
CPC分类号： H01L33/325 , H01L33/0025 , H01L33/007
摘要： A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
摘要翻译：发光二极管的双异质结构包括具有第一导电类型的氮化镓铝层; 具有相反导电类型的氮化镓铝层; 以及在氮化铝镓层之间的氮化镓的有源层，其中氮化镓层与II族受体和IV族给体共掺杂，其中一种掺杂剂以足以使得氮化镓层为净导电型，使得有源层与具有相反导电类型的相邻的氮化铝层形成pn结。

57. 发明授权

US5592501A Low-strain laser structures with group III nitride active layers 失效
标题翻译：具有III族氮化物活性层的低应变激光器结构
公开(公告)号：US5592501A
公开(公告)日：1997-01-07
申请号：US309247
申请日：1994-09-20
申请人： John A. Edmond , Gary E. Bulman , Hua-Shuang Kong
发明人： John A. Edmond , Gary E. Bulman , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S5/32341 , H01S5/343 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/34333
摘要： A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.
摘要翻译：公开了一种III族氮化物激光器结构，该有源层包括至少一层III族氮化物或碳化硅与III族氮化物的合金，碳化硅衬底以及在活性层和碳化硅衬底。缓冲层选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物，其中A和B是III族元素，其中x是0，1，或者是零和一个，以及碳化硅与这种三元III族氮化物的合金。在优选实施例中，激光器结构包括有源层上方的应变最小化接触层，其具有与缓冲层基本相同的晶格常数。

58. 发明授权

US5119540A Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product 失效
标题翻译：用于消除碳化硅外延层和所得产品中的残余氮污染的装置
公开(公告)号：US5119540A
公开(公告)日：1992-06-09
申请号：US558196
申请日：1990-07-24
申请人： Hua-Shuang Kong , Thomas G. Coleman , Calvin H. Carter, Jr.
发明人： Hua-Shuang Kong , Thomas G. Coleman , Calvin H. Carter, Jr.
IPC分类号： C30B25/02 , C30B25/12
CPC分类号： C30B25/12 , C30B25/02 , C30B29/36 , Y10T428/131
摘要： The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.
摘要翻译：本发明是通过降低通过化学气相沉积工艺形成的碳化硅中的残留氮的载流子浓度，形成极其纯的碳化硅外延层的方法和相关的装置和产品。该方法包括放置一个衬底，碳化硅外延层将在其上形成在感受体上，并且其中感受体由在硅化学气相沉积的温度下不会产生不需要的含氮气体的材料形成碳化物将从适当的源气体发生。将衬底加热到通过使用加热感受体材料的感应频率感应加热感受器从适当的源气体发生碳化硅的化学气相沉积的温度。然后引入含硅和含碳源气体，其将在加热的基底上形成碳化硅的外延层。

59. 发明授权

US4912063A Growth of beta-sic thin films and semiconductor devices fabricated thereon 失效
标题翻译：在其上制造的β型薄膜和半导体器件的生长
公开(公告)号：US4912063A
公开(公告)日：1990-03-27
申请号：US113921
申请日：1987-10-26
申请人： Robert F. Davis , Hua-Shuang Kong , Jeffrey T. Glass , Calvin H. Carter, Jr.
发明人： Robert F. Davis , Hua-Shuang Kong , Jeffrey T. Glass , Calvin H. Carter, Jr.
IPC分类号： H01L21/365
CPC分类号： H01L21/0262 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02658 , Y10S117/904 , Y10S148/148
摘要： Device quality thin films of Beta-SiC are epitaxially grown on substrates of Alpha-Sic.
摘要翻译： β-SiC的器件质量薄膜在Alpha-Sic的底物上外延生长。

60. 发明授权

US09754926B2 Light emitting diode (LED) arrays including direct die attach and related assemblies 有权
公开(公告)号：US09754926B2
公开(公告)日：2017-09-05
申请号：US13027006
申请日：2011-02-14
申请人： Matthew Donofrio , John Adam Edmond , Hua-Shuang Kong , Peter S. Andrews , David Todd Emerson
发明人： Matthew Donofrio , John Adam Edmond , Hua-Shuang Kong , Peter S. Andrews , David Todd Emerson
IPC分类号： H01L27/15 , H01L25/075 , H01L33/50 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/505 , H01L33/62 , H01L2224/16
摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die.

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